Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75528) > Seite 1131 nach 1259
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMP3008SFGQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -9.3A; Idm: -80A; 2.2W Drain-source voltage: -30V Drain current: -9.3A On-state resistance: 25mΩ Type of transistor: P-MOSFET Power dissipation: 2.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -80A Mounting: SMD Case: PowerDI3333-8 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMP3008SFGQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -7.1A; 0.9W; PowerDI®3333-8 Application: automotive industry Drain-source voltage: -30V Drain current: -7.1A On-state resistance: 25mΩ Type of transistor: P-MOSFET Power dissipation: 0.9W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PowerDI®3333-8 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3375 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP3010LK3-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 1.7W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -14.5A Power dissipation: 1.7W Case: TO252 Gate-source voltage: ±20V On-state resistance: 10.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1764 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP3010LK3Q-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 1.7W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -14.5A Power dissipation: 1.7W Case: TO252 Gate-source voltage: ±20V On-state resistance: 10.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP3010LPSQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -11.5A; Idm: -100A; 2.18W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Power dissipation: 2.18W On-state resistance: 10mΩ Polarisation: unipolar Drain current: -11.5A Drain-source voltage: -30V Gate charge: 126.2nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: P-MOSFET Pulsed drain current: -100A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP3011SFVWQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -176A; 2.25W Mounting: SMD Pulsed drain current: -176A Power dissipation: 2.25W Gate charge: 46nC Polarisation: unipolar Drain current: -12A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Kind of package: reel; tape Case: PowerDI3333-8 On-state resistance: 18mΩ Gate-source voltage: ±25V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMP3011SFVWQ-7 | DIODES INCORPORATED |
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DMP3011SSS-13 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMP3012LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -10.5A; Idm: -100A; 2.36W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Power dissipation: 2.36W On-state resistance: 12mΩ Polarisation: unipolar Drain current: -10.5A Drain-source voltage: -30V Gate charge: 139nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: P-MOSFET Pulsed drain current: -100A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP3013SFK-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -80A; 2.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.5A Pulsed drain current: -80A Power dissipation: 2.1W Case: U-DFN2523-6 Gate-source voltage: ±25V On-state resistance: 25mΩ Mounting: SMD Gate charge: 33.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMP3013SFV-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 1.94W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -10A Pulsed drain current: -80A Power dissipation: 1.94W Case: PowerDI3333-8 Gate-source voltage: ±25V On-state resistance: 17mΩ Mounting: SMD Gate charge: 33.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP3013SFV-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 0.94W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -10A Pulsed drain current: -80A Power dissipation: 0.94W Case: PowerDI®3333-8 Gate-source voltage: ±25V On-state resistance: 9.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 2000 Stücke |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP3015LSS-13 | DIODES INCORPORATED |
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DMP3015LSSQ-13 | DIODES INCORPORATED |
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DMP3017SFG-7 | DIODES INCORPORATED |
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DMP3018SFK-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -7.7A; 1W; U-DFN2523-6 Mounting: SMD Drain-source voltage: -30V Drain current: -7.7A On-state resistance: 25.5mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±25V Case: U-DFN2523-6 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP3018SFV-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -70A; 1.9W Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: -70A Mounting: SMD Drain-source voltage: -30V Drain current: -9A On-state resistance: 21mΩ Type of transistor: P-MOSFET Power dissipation: 1.9W Polarisation: unipolar Gate charge: 51nC Kind of channel: enhanced Gate-source voltage: ±25V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP3018SFV-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -70A; 1.9W Mounting: SMD Drain-source voltage: -30V Drain current: -9A On-state resistance: 21mΩ Type of transistor: P-MOSFET Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 51nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -70A Case: PowerDI3333-8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP3018SSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -90A; 1.7W; SO8 Mounting: SMD Drain-source voltage: -30V Drain current: -8.5A On-state resistance: 21mΩ Type of transistor: P-MOSFET Power dissipation: 1.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 51nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -90A Case: SO8 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP3020LSS-13 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMP3021SFVW-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -128A; 2.5W Mounting: SMD Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -128A Case: PowerDI3333-8 Drain-source voltage: -30V Drain current: -9A On-state resistance: 25mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMP3021SFVWQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -128A; 2.5W Application: automotive industry Mounting: SMD Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -128A Case: PowerDI3333-8 Drain-source voltage: -30V Drain current: -9A On-state resistance: 25mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMP3021SSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -128A; 2.5W; SO8 Mounting: SMD Case: SO8 Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -128A Drain-source voltage: -30V Drain current: -8.3A On-state resistance: 25mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP3026SFDE-13 | DIODES INCORPORATED |
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DMP3026SFDE-7 | DIODES INCORPORATED |
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DMP3026SFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W Mounting: SMD Case: U-DFN2020-6 Power dissipation: 1.3W Kind of package: reel; tape Type of transistor: P-MOSFET Gate-source voltage: ±25V On-state resistance: 54mΩ Pulsed drain current: -50A Gate charge: 19.6nC Polarisation: unipolar Drain current: -8.3A Kind of channel: enhanced Drain-source voltage: -30V Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP3026SFDF-7 | DIODES INCORPORATED | DMP3026SFDF-7 SMD P channel transistors |
Produkt ist nicht verfügbar |
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DMP3028LFDE-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -6.6A; Idm: -40A; 1.3W Mounting: SMD Kind of package: reel; tape Power dissipation: 1.3W Polarisation: unipolar Gate charge: 33nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -40A Case: U-DFN2020-6 Drain-source voltage: -30V Drain current: -6.6A On-state resistance: 38mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP3028LFDE-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -6.6A; Idm: -40A; 1.3W Mounting: SMD Kind of package: reel; tape Power dissipation: 1.3W Polarisation: unipolar Gate charge: 33nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -40A Case: U-DFN2020-6 Drain-source voltage: -30V Drain current: -6.6A On-state resistance: 38mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP3028LK3-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -22A; Idm: -40A; 1.6W; TO252 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.6W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -40A Case: TO252 Drain-source voltage: -30V Drain current: -22A On-state resistance: 25mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP3028LK3Q-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -8.6A; Idm: -40A; 1.8W; TO252 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.8W Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -40A Case: TO252 Drain-source voltage: -30V Drain current: -8.6A On-state resistance: 38mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP3028LPSQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -70A; 2.12W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Power dissipation: 2.12W On-state resistance: 38mΩ Polarisation: unipolar Drain current: -17A Drain-source voltage: -30V Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: P-MOSFET Pulsed drain current: -70A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP3028LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -30A; 1.1W; SO8 Polarisation: unipolar On-state resistance: 38mΩ Kind of package: reel; tape Drain current: -5.8A Drain-source voltage: -30V Case: SO8 Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -30A Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 1.1W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP3030SN-7 | DIODES INCORPORATED |
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DMP3035LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -8A; Idm: -80A; 2W; SO8 Kind of package: reel; tape Drain-source voltage: -30V Drain current: -8A On-state resistance: 36mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Gate charge: 30.7nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -80A Mounting: SMD Case: SO8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP3035SFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -70A; 2.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -10A Pulsed drain current: -70A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±25V On-state resistance: 29mΩ Mounting: SMD Gate charge: 35.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP3036SFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -80A; 2.3W Mounting: SMD Drain-source voltage: -30V Drain current: -25A On-state resistance: 29mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.5nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -80A Case: PowerDI3333-8 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMP3036SFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -30A; 0.9W; PowerDI®3333-8 Mounting: SMD Drain-source voltage: -30V Drain current: -30A On-state resistance: 29mΩ Type of transistor: P-MOSFET Power dissipation: 0.9W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±25V Case: PowerDI®3333-8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP3036SFV-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: -80A Mounting: SMD Drain-source voltage: -30V Drain current: -7A On-state resistance: 29mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 16.5nC Kind of channel: enhanced Gate-source voltage: ±25V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMP3036SFV-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W Mounting: SMD Drain-source voltage: -30V Drain current: -7A On-state resistance: 29mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.5nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -80A Case: PowerDI3333-8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP3036SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -80A; 1.1W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.5A Pulsed drain current: -80A Power dissipation: 1.1W Case: SO8 Gate-source voltage: ±25V On-state resistance: 29mΩ Mounting: SMD Gate charge: 16.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP3036SSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -16.2A; 1.4W; SO8 Mounting: SMD Drain-source voltage: -30V Drain current: -16.2A On-state resistance: 29mΩ Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±25V Case: SO8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP3037LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; Idm: -40A; 1W; SO8 Kind of package: reel; tape Drain-source voltage: -30V Drain current: -4.6A On-state resistance: 50mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 19.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -40A Mounting: SMD Case: SO8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP3048LSD-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -35A; 1.7W; SO8 Polarisation: unipolar On-state resistance: 80mΩ Kind of package: reel; tape Drain current: -3.8A Drain-source voltage: -30V Case: SO8 Gate charge: 29.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -35A Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 1.7W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP3050LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; Idm: -30A; 1.1W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.9A Pulsed drain current: -30A Power dissipation: 1.1W Case: SO8 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP3050LVT-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -25A; 1.6W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -25A Power dissipation: 1.6W Case: TSOT26 Gate-source voltage: ±25V On-state resistance: 50mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2585 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP3050LVTQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP3056L-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; Idm: -20A; 1.38W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.4A Pulsed drain current: -20A Power dissipation: 1.38W Case: SOT23 Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: SMD Gate charge: 11.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP3056L-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; 1.38W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.4A Power dissipation: 1.38W Case: SOT23 Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3415 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP3056LDM-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -4.3A; Idm: -13A; 1.25W; SOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.3A Pulsed drain current: -13A Power dissipation: 1.25W Case: SOT26 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 133 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP3056LDMQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.25W; SOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.3A Power dissipation: 1.25W Case: SOT26 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP3056LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.1A; 2.5W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.1A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2188 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP3056LSDQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -24A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.8A Pulsed drain current: -24A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 13.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP3056LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -20A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -6A Pulsed drain current: -20A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP3056LSSQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.9A; Idm: -25A; 1W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.9A Pulsed drain current: -25A Power dissipation: 1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 17.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP3068L-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.2A; Idm: -18A; 1.2W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Drain current: -3.2A On-state resistance: 0.165Ω Type of transistor: P-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 15.9nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -18A Drain-source voltage: -30V Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP3068L-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 85mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 5420 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP3085LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.1A Pulsed drain current: -20A Power dissipation: 1.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP3085LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -4.2A; Idm: -20A; 1W; SO8 Kind of package: reel; tape Mounting: SMD Pulsed drain current: -20A Power dissipation: 1W Gate charge: 11nC Polarisation: unipolar Drain current: -4.2A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Case: SO8 On-state resistance: 95mΩ Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMP3097L-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -20A; 1.52W; SOT23 Kind of package: reel; tape Drain-source voltage: -30V Drain current: -3.1A On-state resistance: 99mΩ Type of transistor: P-MOSFET Power dissipation: 1.52W Polarisation: unipolar Gate charge: 13.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A Mounting: SMD Case: SOT23 Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
DMP3008SFGQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.3A; Idm: -80A; 2.2W
Drain-source voltage: -30V
Drain current: -9.3A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -80A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.3A; Idm: -80A; 2.2W
Drain-source voltage: -30V
Drain current: -9.3A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -80A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMP3008SFGQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.1A; 0.9W; PowerDI®3333-8
Application: automotive industry
Drain-source voltage: -30V
Drain current: -7.1A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PowerDI®3333-8
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.1A; 0.9W; PowerDI®3333-8
Application: automotive industry
Drain-source voltage: -30V
Drain current: -7.1A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PowerDI®3333-8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3375 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
64+ | 1.13 EUR |
77+ | 0.94 EUR |
101+ | 0.71 EUR |
107+ | 0.67 EUR |
DMP3010LK3-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 1.7W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.5A
Power dissipation: 1.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 1.7W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.5A
Power dissipation: 1.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1764 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 1 EUR |
114+ | 0.63 EUR |
129+ | 0.56 EUR |
149+ | 0.48 EUR |
158+ | 0.45 EUR |
DMP3010LK3Q-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 1.7W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.5A
Power dissipation: 1.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 1.7W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.5A
Power dissipation: 1.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP3010LPSQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.5A; Idm: -100A; 2.18W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 2.18W
On-state resistance: 10mΩ
Polarisation: unipolar
Drain current: -11.5A
Drain-source voltage: -30V
Gate charge: 126.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Pulsed drain current: -100A
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.5A; Idm: -100A; 2.18W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 2.18W
On-state resistance: 10mΩ
Polarisation: unipolar
Drain current: -11.5A
Drain-source voltage: -30V
Gate charge: 126.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Pulsed drain current: -100A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP3011SFVWQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -176A; 2.25W
Mounting: SMD
Pulsed drain current: -176A
Power dissipation: 2.25W
Gate charge: 46nC
Polarisation: unipolar
Drain current: -12A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: PowerDI3333-8
On-state resistance: 18mΩ
Gate-source voltage: ±25V
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -176A; 2.25W
Mounting: SMD
Pulsed drain current: -176A
Power dissipation: 2.25W
Gate charge: 46nC
Polarisation: unipolar
Drain current: -12A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: PowerDI3333-8
On-state resistance: 18mΩ
Gate-source voltage: ±25V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMP3011SFVWQ-7 |
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Hersteller: DIODES INCORPORATED
DMP3011SFVWQ-7 SMD N channel transistors
DMP3011SFVWQ-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMP3011SSS-13 |
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Hersteller: DIODES INCORPORATED
DMP3011SSS-13 SMD P channel transistors
DMP3011SSS-13 SMD P channel transistors
Produkt ist nicht verfügbar
DMP3012LPS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10.5A; Idm: -100A; 2.36W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 2.36W
On-state resistance: 12mΩ
Polarisation: unipolar
Drain current: -10.5A
Drain-source voltage: -30V
Gate charge: 139nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Pulsed drain current: -100A
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10.5A; Idm: -100A; 2.36W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 2.36W
On-state resistance: 12mΩ
Polarisation: unipolar
Drain current: -10.5A
Drain-source voltage: -30V
Gate charge: 139nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Pulsed drain current: -100A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP3013SFK-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -80A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Pulsed drain current: -80A
Power dissipation: 2.1W
Case: U-DFN2523-6
Gate-source voltage: ±25V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 33.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -80A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Pulsed drain current: -80A
Power dissipation: 2.1W
Case: U-DFN2523-6
Gate-source voltage: ±25V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 33.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMP3013SFV-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 1.94W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Pulsed drain current: -80A
Power dissipation: 1.94W
Case: PowerDI3333-8
Gate-source voltage: ±25V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 33.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 1.94W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Pulsed drain current: -80A
Power dissipation: 1.94W
Case: PowerDI3333-8
Gate-source voltage: ±25V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 33.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP3013SFV-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 0.94W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Pulsed drain current: -80A
Power dissipation: 0.94W
Case: PowerDI®3333-8
Gate-source voltage: ±25V
On-state resistance: 9.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 0.94W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Pulsed drain current: -80A
Power dissipation: 0.94W
Case: PowerDI®3333-8
Gate-source voltage: ±25V
On-state resistance: 9.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 2000 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.26 EUR |
DMP3015LSS-13 |
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Hersteller: DIODES INCORPORATED
DMP3015LSS-13 SMD P channel transistors
DMP3015LSS-13 SMD P channel transistors
Produkt ist nicht verfügbar
DMP3015LSSQ-13 |
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Hersteller: DIODES INCORPORATED
DMP3015LSSQ-13 SMD P channel transistors
DMP3015LSSQ-13 SMD P channel transistors
Produkt ist nicht verfügbar
DMP3017SFG-7 |
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Hersteller: DIODES INCORPORATED
DMP3017SFG-7 SMD P channel transistors
DMP3017SFG-7 SMD P channel transistors
Produkt ist nicht verfügbar
DMP3018SFK-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.7A; 1W; U-DFN2523-6
Mounting: SMD
Drain-source voltage: -30V
Drain current: -7.7A
On-state resistance: 25.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: U-DFN2523-6
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.7A; 1W; U-DFN2523-6
Mounting: SMD
Drain-source voltage: -30V
Drain current: -7.7A
On-state resistance: 25.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: U-DFN2523-6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP3018SFV-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -70A; 1.9W
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: -70A
Mounting: SMD
Drain-source voltage: -30V
Drain current: -9A
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.9W
Polarisation: unipolar
Gate charge: 51nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -70A; 1.9W
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: -70A
Mounting: SMD
Drain-source voltage: -30V
Drain current: -9A
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.9W
Polarisation: unipolar
Gate charge: 51nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP3018SFV-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -70A; 1.9W
Mounting: SMD
Drain-source voltage: -30V
Drain current: -9A
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 51nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -70A
Case: PowerDI3333-8
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -70A; 1.9W
Mounting: SMD
Drain-source voltage: -30V
Drain current: -9A
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 51nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -70A
Case: PowerDI3333-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP3018SSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -90A; 1.7W; SO8
Mounting: SMD
Drain-source voltage: -30V
Drain current: -8.5A
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 51nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -90A
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -90A; 1.7W; SO8
Mounting: SMD
Drain-source voltage: -30V
Drain current: -8.5A
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 51nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -90A
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP3020LSS-13 |
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Hersteller: DIODES INCORPORATED
DMP3020LSS-13 SMD P channel transistors
DMP3020LSS-13 SMD P channel transistors
Produkt ist nicht verfügbar
DMP3021SFVW-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -128A; 2.5W
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -128A
Case: PowerDI3333-8
Drain-source voltage: -30V
Drain current: -9A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -128A; 2.5W
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -128A
Case: PowerDI3333-8
Drain-source voltage: -30V
Drain current: -9A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMP3021SFVWQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -128A; 2.5W
Application: automotive industry
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -128A
Case: PowerDI3333-8
Drain-source voltage: -30V
Drain current: -9A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -128A; 2.5W
Application: automotive industry
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -128A
Case: PowerDI3333-8
Drain-source voltage: -30V
Drain current: -9A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMP3021SSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -128A; 2.5W; SO8
Mounting: SMD
Case: SO8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -128A
Drain-source voltage: -30V
Drain current: -8.3A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -128A; 2.5W; SO8
Mounting: SMD
Case: SO8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -128A
Drain-source voltage: -30V
Drain current: -8.3A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP3026SFDE-13 |
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Hersteller: DIODES INCORPORATED
DMP3026SFDE-13 SMD P channel transistors
DMP3026SFDE-13 SMD P channel transistors
Produkt ist nicht verfügbar
DMP3026SFDE-7 |
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Hersteller: DIODES INCORPORATED
DMP3026SFDE-7 SMD P channel transistors
DMP3026SFDE-7 SMD P channel transistors
Produkt ist nicht verfügbar
DMP3026SFDF-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Power dissipation: 1.3W
Kind of package: reel; tape
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Pulsed drain current: -50A
Gate charge: 19.6nC
Polarisation: unipolar
Drain current: -8.3A
Kind of channel: enhanced
Drain-source voltage: -30V
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.3A; Idm: -50A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Power dissipation: 1.3W
Kind of package: reel; tape
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 54mΩ
Pulsed drain current: -50A
Gate charge: 19.6nC
Polarisation: unipolar
Drain current: -8.3A
Kind of channel: enhanced
Drain-source voltage: -30V
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP3026SFDF-7 |
Hersteller: DIODES INCORPORATED
DMP3026SFDF-7 SMD P channel transistors
DMP3026SFDF-7 SMD P channel transistors
Produkt ist nicht verfügbar
DMP3028LFDE-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.6A; Idm: -40A; 1.3W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 33nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Case: U-DFN2020-6
Drain-source voltage: -30V
Drain current: -6.6A
On-state resistance: 38mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.6A; Idm: -40A; 1.3W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 33nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Case: U-DFN2020-6
Drain-source voltage: -30V
Drain current: -6.6A
On-state resistance: 38mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP3028LFDE-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.6A; Idm: -40A; 1.3W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 33nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Case: U-DFN2020-6
Drain-source voltage: -30V
Drain current: -6.6A
On-state resistance: 38mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.6A; Idm: -40A; 1.3W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 33nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Case: U-DFN2020-6
Drain-source voltage: -30V
Drain current: -6.6A
On-state resistance: 38mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP3028LK3-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -22A; Idm: -40A; 1.6W; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Case: TO252
Drain-source voltage: -30V
Drain current: -22A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -22A; Idm: -40A; 1.6W; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Case: TO252
Drain-source voltage: -30V
Drain current: -22A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP3028LK3Q-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.6A; Idm: -40A; 1.8W; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Case: TO252
Drain-source voltage: -30V
Drain current: -8.6A
On-state resistance: 38mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.6A; Idm: -40A; 1.8W; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Case: TO252
Drain-source voltage: -30V
Drain current: -8.6A
On-state resistance: 38mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP3028LPSQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -70A; 2.12W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 2.12W
On-state resistance: 38mΩ
Polarisation: unipolar
Drain current: -17A
Drain-source voltage: -30V
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Pulsed drain current: -70A
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -70A; 2.12W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 2.12W
On-state resistance: 38mΩ
Polarisation: unipolar
Drain current: -17A
Drain-source voltage: -30V
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Pulsed drain current: -70A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP3028LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -30A; 1.1W; SO8
Polarisation: unipolar
On-state resistance: 38mΩ
Kind of package: reel; tape
Drain current: -5.8A
Drain-source voltage: -30V
Case: SO8
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 1.1W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -30A; 1.1W; SO8
Polarisation: unipolar
On-state resistance: 38mΩ
Kind of package: reel; tape
Drain current: -5.8A
Drain-source voltage: -30V
Case: SO8
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 1.1W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP3030SN-7 |
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Hersteller: DIODES INCORPORATED
DMP3030SN-7 SMD P channel transistors
DMP3030SN-7 SMD P channel transistors
Produkt ist nicht verfügbar
DMP3035LSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; Idm: -80A; 2W; SO8
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -8A
On-state resistance: 36mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 30.7nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; Idm: -80A; 2W; SO8
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -8A
On-state resistance: 36mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 30.7nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP3035SFG-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -70A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Pulsed drain current: -70A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±25V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 35.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -70A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Pulsed drain current: -70A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±25V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 35.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP3036SFG-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -80A; 2.3W
Mounting: SMD
Drain-source voltage: -30V
Drain current: -25A
On-state resistance: 29mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.5nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Case: PowerDI3333-8
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -80A; 2.3W
Mounting: SMD
Drain-source voltage: -30V
Drain current: -25A
On-state resistance: 29mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.5nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Case: PowerDI3333-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMP3036SFG-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; 0.9W; PowerDI®3333-8
Mounting: SMD
Drain-source voltage: -30V
Drain current: -30A
On-state resistance: 29mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: PowerDI®3333-8
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; 0.9W; PowerDI®3333-8
Mounting: SMD
Drain-source voltage: -30V
Drain current: -30A
On-state resistance: 29mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: PowerDI®3333-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP3036SFV-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: -80A
Mounting: SMD
Drain-source voltage: -30V
Drain current: -7A
On-state resistance: 29mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 16.5nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: -80A
Mounting: SMD
Drain-source voltage: -30V
Drain current: -7A
On-state resistance: 29mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 16.5nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMP3036SFV-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W
Mounting: SMD
Drain-source voltage: -30V
Drain current: -7A
On-state resistance: 29mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.5nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Case: PowerDI3333-8
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W
Mounting: SMD
Drain-source voltage: -30V
Drain current: -7A
On-state resistance: 29mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.5nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Case: PowerDI3333-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP3036SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -80A; 1.1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Pulsed drain current: -80A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -80A; 1.1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Pulsed drain current: -80A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP3036SSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16.2A; 1.4W; SO8
Mounting: SMD
Drain-source voltage: -30V
Drain current: -16.2A
On-state resistance: 29mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: SO8
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16.2A; 1.4W; SO8
Mounting: SMD
Drain-source voltage: -30V
Drain current: -16.2A
On-state resistance: 29mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP3037LSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; Idm: -40A; 1W; SO8
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -4.6A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 19.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; Idm: -40A; 1W; SO8
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -4.6A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 19.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP3048LSD-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -35A; 1.7W; SO8
Polarisation: unipolar
On-state resistance: 80mΩ
Kind of package: reel; tape
Drain current: -3.8A
Drain-source voltage: -30V
Case: SO8
Gate charge: 29.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -35A
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 1.7W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -35A; 1.7W; SO8
Polarisation: unipolar
On-state resistance: 80mΩ
Kind of package: reel; tape
Drain current: -3.8A
Drain-source voltage: -30V
Case: SO8
Gate charge: 29.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -35A
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 1.7W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP3050LSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; Idm: -30A; 1.1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Pulsed drain current: -30A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; Idm: -30A; 1.1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Pulsed drain current: -30A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP3050LVT-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -25A; 1.6W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -25A
Power dissipation: 1.6W
Case: TSOT26
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -25A; 1.6W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -25A
Power dissipation: 1.6W
Case: TSOT26
Gate-source voltage: ±25V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2585 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
285+ | 0.25 EUR |
320+ | 0.23 EUR |
415+ | 0.17 EUR |
440+ | 0.16 EUR |
DMP3050LVTQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP3056L-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; Idm: -20A; 1.38W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -20A
Power dissipation: 1.38W
Case: SOT23
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 11.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; Idm: -20A; 1.38W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -20A
Power dissipation: 1.38W
Case: SOT23
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 11.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP3056L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; 1.38W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Power dissipation: 1.38W
Case: SOT23
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; 1.38W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Power dissipation: 1.38W
Case: SOT23
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3415 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
300+ | 0.24 EUR |
415+ | 0.17 EUR |
470+ | 0.15 EUR |
545+ | 0.13 EUR |
575+ | 0.12 EUR |
DMP3056LDM-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.3A; Idm: -13A; 1.25W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.3A
Pulsed drain current: -13A
Power dissipation: 1.25W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.3A; Idm: -13A; 1.25W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.3A
Pulsed drain current: -13A
Power dissipation: 1.25W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 133 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
133+ | 0.54 EUR |
223+ | 0.31 EUR |
3000+ | 0.19 EUR |
DMP3056LDMQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.25W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.3A
Power dissipation: 1.25W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.25W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.3A
Power dissipation: 1.25W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP3056LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.1A; 2.5W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.1A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.1A; 2.5W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.1A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2188 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
65+ | 1.1 EUR |
220+ | 0.33 EUR |
249+ | 0.29 EUR |
287+ | 0.25 EUR |
303+ | 0.24 EUR |
DMP3056LSDQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -24A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Pulsed drain current: -24A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 13.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -24A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Pulsed drain current: -24A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 13.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP3056LSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP3056LSSQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.9A; Idm: -25A; 1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.9A
Pulsed drain current: -25A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.9A; Idm: -25A; 1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.9A
Pulsed drain current: -25A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP3068L-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.2A; Idm: -18A; 1.2W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain current: -3.2A
On-state resistance: 0.165Ω
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 15.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -18A
Drain-source voltage: -30V
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.2A; Idm: -18A; 1.2W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain current: -3.2A
On-state resistance: 0.165Ω
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 15.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -18A
Drain-source voltage: -30V
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP3068L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5420 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
360+ | 0.2 EUR |
615+ | 0.12 EUR |
770+ | 0.093 EUR |
850+ | 0.084 EUR |
900+ | 0.08 EUR |
3000+ | 0.078 EUR |
DMP3085LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.1A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.1A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP3085LSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.2A; Idm: -20A; 1W; SO8
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -20A
Power dissipation: 1W
Gate charge: 11nC
Polarisation: unipolar
Drain current: -4.2A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: SO8
On-state resistance: 95mΩ
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.2A; Idm: -20A; 1W; SO8
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -20A
Power dissipation: 1W
Gate charge: 11nC
Polarisation: unipolar
Drain current: -4.2A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: SO8
On-state resistance: 95mΩ
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMP3097L-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -20A; 1.52W; SOT23
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -3.1A
On-state resistance: 99mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.52W
Polarisation: unipolar
Gate charge: 13.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -20A; 1.52W; SOT23
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -3.1A
On-state resistance: 99mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.52W
Polarisation: unipolar
Gate charge: 13.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar