Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75998) > Seite 1136 nach 1267
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DMP2035UVT-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Pulsed drain current: -24A Power dissipation: 2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2035UVT-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26 Mounting: SMD Case: TSOT26 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -4.8A On-state resistance: 62mΩ Type of transistor: P-MOSFET Power dissipation: 1.2W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±12V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4974 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2035UVTQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Pulsed drain current: -24A Power dissipation: 2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2035UVTQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Pulsed drain current: -24A Power dissipation: 2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2036UVT-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26 Mounting: SMD Kind of package: reel; tape Gate charge: 20.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A Case: TSOT26 Drain-source voltage: -20V Drain current: -5A On-state resistance: 58mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2036UVT-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26 Mounting: SMD Kind of package: reel; tape Gate charge: 20.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A Case: TSOT26 Drain-source voltage: -20V Drain current: -5A On-state resistance: 58mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMP2037U-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; Idm: -38A; 1.6W; SOT23 Mounting: SMD Pulsed drain current: -38A Power dissipation: 1.6W Gate charge: 14.5nC Polarisation: unipolar Drain current: -4.8A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape Case: SOT23 On-state resistance: 43mΩ Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMP2039UFDE-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -25V; -5.4A; 0.8W; U-DFN2020-6 Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -25V Drain current: -5.4A On-state resistance: 40mΩ Type of transistor: P-MOSFET Power dissipation: 0.8W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2039UFDE4-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -25V; -7.3A; Idm: -60A; 1.5W Case: X2-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -25V Drain current: -7.3A On-state resistance: 70mΩ Type of transistor: P-MOSFET Power dissipation: 1.5W Polarisation: unipolar Gate charge: 28.2nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -60A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMP2040UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W Mounting: SMD Case: U-DFN2020-6 Kind of package: reel; tape Power dissipation: 1.8W Drain current: -4.9A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V On-state resistance: 53mΩ Pulsed drain current: -35A Gate charge: 19nC Polarisation: unipolar Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2040UFDF-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 0.8W Mounting: SMD Case: U-DFN2020-6 Kind of package: reel; tape Power dissipation: 0.8W Drain current: -4.9A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V On-state resistance: 53mΩ Pulsed drain current: -35A Gate charge: 19nC Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2040USD-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -30A; 1.6W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5A Pulsed drain current: -30A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±12V On-state resistance: 52mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2040USS-13 | DIODES INCORPORATED |
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DMP2040UVT-13 | DIODES INCORPORATED |
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DMP2040UVT-7 | DIODES INCORPORATED | DMP2040UVT-7 SMD P channel transistors |
Produkt ist nicht verfügbar |
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DMP2042UCB4-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -16A; 1.4W Mounting: SMD Case: U-WLB1010-4 Kind of package: reel; tape Gate charge: 2.5nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -16A Drain-source voltage: -20V Drain current: -3.7A On-state resistance: 65mΩ Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMP2043UCA3-7 | DIODES INCORPORATED | DMP2043UCA3-7 SMD P channel transistors |
Produkt ist nicht verfügbar |
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DMP2045U-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Power dissipation: 1.2W Gate charge: 6.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -25A Case: SOT23 Drain-source voltage: -20V Drain current: -3.5A On-state resistance: 90mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2045U-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23 Mounting: SMD Power dissipation: 0.8W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Case: SOT23 Drain-source voltage: -20V Drain current: -3.1A On-state resistance: 90mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2508 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2045UFY4-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -25A; 1.49W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Power dissipation: 1.49W Gate charge: 6.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -25A Case: X2-DFN2015-3 Drain-source voltage: -20V Drain current: -3.8A On-state resistance: 0.16Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2045UQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Power dissipation: 1.2W Gate charge: 6.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -25A Case: SOT23 Drain-source voltage: -20V Drain current: -3.5A On-state resistance: 90mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMP2047UCB4-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.2A; Idm: -16A; 1.66W Mounting: SMD Case: U-WLB1010-4 Kind of package: reel; tape Gate charge: 2.3nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -16A Drain-source voltage: -20V Drain current: -3.2A On-state resistance: 60mΩ Type of transistor: P-MOSFET Power dissipation: 1.66W Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMP2065UFDB-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -25A; 1.54W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.6A Pulsed drain current: -25A Power dissipation: 1.54W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 9.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2065UFDB-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.2A; 0.74W; U-DFN2020-6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.2A Power dissipation: 0.74W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2065UQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -15A; 1.5W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Pulsed drain current: -15A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 113mΩ Mounting: SMD Gate charge: 10.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2066LDMQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.7A Pulsed drain current: -18A Power dissipation: 1.25W Case: SOT26 Gate-source voltage: ±12V On-state resistance: 70mΩ Mounting: SMD Gate charge: 10.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2066LSN-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SC59 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.7A Pulsed drain current: -18A Power dissipation: 1.25W Case: SC59 Gate-source voltage: ±12V On-state resistance: 70mΩ Mounting: SMD Gate charge: 10.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2066UFDE-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -25A; 2.03W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.9A Pulsed drain current: -25A Power dissipation: 2.03W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 75mΩ Mounting: SMD Gate charge: 14.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2069UFY4-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -12A Power dissipation: 0.53W Case: X2-DFN2015-3 Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Gate charge: 9.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2069UFY4Q-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -12A Power dissipation: 0.53W Case: X2-DFN2015-3 Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Gate charge: 9.1nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2070U-7 | DIODES INCORPORATED |
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DMP2070UQ-7 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMP2075UFDB-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Pulsed drain current: -25A Power dissipation: 1.4W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 137mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2075UFDB-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Pulsed drain current: -25A Power dissipation: 1.4W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 137mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2078LCA3-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W Kind of package: reel; tape Drain-source voltage: -20V Drain current: -2.7A On-state resistance: 0.6Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -13A Mounting: SMD Case: X4-DSN1006-3 Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2100UFU-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6 Polarisation: unipolar Type of transistor: P-MOSFET x2 Power dissipation: 0.9W Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V Mounting: SMD Case: U-DFN2030-6 Drain-source voltage: -20V Drain current: -4.1A On-state resistance: 75mΩ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2520 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2100UQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; 0.8W; SOT23 Application: automotive industry Polarisation: unipolar Type of transistor: P-MOSFET Power dissipation: 0.8W Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V Mounting: SMD Case: SOT23 Drain-source voltage: -20V Drain current: -3.4A On-state resistance: 75mΩ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3030 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2104LP-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; 0.5W; DFN1411-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.2A Power dissipation: 0.5W Case: DFN1411-3 Gate-source voltage: ±12V On-state resistance: 0.24Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1458 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2104V-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; Idm: -4A; 0.85W; SOT563 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -4A Power dissipation: 0.85W Case: SOT563 Gate-source voltage: ±12V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMP210DUFB4-7B | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -160mA; Idm: -0.6A; 350mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -160mA Pulsed drain current: -0.6A Power dissipation: 0.35W Case: X2-DFN1006-3 Gate-source voltage: ±10V On-state resistance: 20Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2110U-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -15A; 1.2W; SOT23 Mounting: SMD Power dissipation: 1.2W Polarisation: unipolar Kind of package: reel; tape Case: SOT23 Gate charge: 6nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -15A Drain-source voltage: -20V Drain current: -2.8A On-state resistance: 0.11Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2110UVT-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.4A; Idm: -15A; 740mW Mounting: SMD Power dissipation: 0.74W Polarisation: unipolar Kind of package: reel; tape Case: TSOT26 Gate charge: 6nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -15A Drain-source voltage: -20V Drain current: -1.4A On-state resistance: 0.24Ω Type of transistor: P-MOSFET x2 Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2110UW-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; Idm: -15A; 650mW Mounting: SMD Power dissipation: 0.65W Polarisation: unipolar Kind of package: reel; tape Case: SOT323 Gate charge: 6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -15A Drain-source voltage: -20V Drain current: -1.6A On-state resistance: 0.16Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2120U-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.3W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Pulsed drain current: -20A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2120U-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 0.8W; SOT23 Power dissipation: 0.8W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Mounting: SMD Case: SOT23 Drain-source voltage: -20V Drain current: -3A On-state resistance: 62mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2123L-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; Idm: -15A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Pulsed drain current: -15A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 123mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2123LQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; Idm: -15A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Pulsed drain current: -15A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 123mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2123LQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; Idm: -15A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Pulsed drain current: -15A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 123mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2130L-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 0.125Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2330 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2130LDM-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.25W; SOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.7A Power dissipation: 1.25W Case: SOT26 Gate-source voltage: ±12V On-state resistance: 0.13Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP213DUFA-7B | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -25V Drain current: -125mA Pulsed drain current: -0.5A Power dissipation: 0.36W Case: X2-DFN0806-3 Gate-source voltage: ±8V On-state resistance: 13Ω Mounting: SMD Gate charge: 0.35nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2160UFDB-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.8A Pulsed drain current: -13A Power dissipation: 1.4W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 86mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2160UFDBQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.8A Pulsed drain current: -13A Power dissipation: 1.4W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 86mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2160UWQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -10A; 350mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.2A Pulsed drain current: -10A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±10V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2165UW-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -15A; 700mW; SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -15A Power dissipation: 0.7W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2165UW-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -15A; 0.5W; SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -15A Power dissipation: 0.5W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 735 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2170U-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -13A; 1.28W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.5A Pulsed drain current: -13A Power dissipation: 1.28W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 7.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2170U-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -13A; 1.28W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.5A Pulsed drain current: -13A Power dissipation: 1.28W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 7.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMP21D0UFB-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.17A; Idm: -5A; 990mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.17A Pulsed drain current: -5A Power dissipation: 0.99W Case: X1-DFN1006-3 Gate-source voltage: ±8V On-state resistance: 960mΩ Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMP21D0UFB-7B | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.17A; Idm: -5A; 990mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.17A Pulsed drain current: -5A Power dissipation: 0.99W Case: X1-DFN1006-3 Gate-source voltage: ±8V On-state resistance: 960mΩ Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
DMP2035UVT-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP2035UVT-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -4.8A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -4.8A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4974 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
120+ | 0.6 EUR |
176+ | 0.41 EUR |
239+ | 0.3 EUR |
329+ | 0.22 EUR |
463+ | 0.15 EUR |
DMP2035UVTQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP2035UVTQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2036UVT-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Kind of package: reel; tape
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Case: TSOT26
Drain-source voltage: -20V
Drain current: -5A
On-state resistance: 58mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Kind of package: reel; tape
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Case: TSOT26
Drain-source voltage: -20V
Drain current: -5A
On-state resistance: 58mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP2036UVT-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Kind of package: reel; tape
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Case: TSOT26
Drain-source voltage: -20V
Drain current: -5A
On-state resistance: 58mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Kind of package: reel; tape
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Case: TSOT26
Drain-source voltage: -20V
Drain current: -5A
On-state resistance: 58mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMP2037U-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; Idm: -38A; 1.6W; SOT23
Mounting: SMD
Pulsed drain current: -38A
Power dissipation: 1.6W
Gate charge: 14.5nC
Polarisation: unipolar
Drain current: -4.8A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 43mΩ
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; Idm: -38A; 1.6W; SOT23
Mounting: SMD
Pulsed drain current: -38A
Power dissipation: 1.6W
Gate charge: 14.5nC
Polarisation: unipolar
Drain current: -4.8A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 43mΩ
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMP2039UFDE-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -5.4A; 0.8W; U-DFN2020-6
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -25V
Drain current: -5.4A
On-state resistance: 40mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -5.4A; 0.8W; U-DFN2020-6
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -25V
Drain current: -5.4A
On-state resistance: 40mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2039UFDE4-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -7.3A; Idm: -60A; 1.5W
Case: X2-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -25V
Drain current: -7.3A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Gate charge: 28.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -60A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -7.3A; Idm: -60A; 1.5W
Case: X2-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -25V
Drain current: -7.3A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Gate charge: 28.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -60A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMP2040UFDF-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Power dissipation: 1.8W
Drain current: -4.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Pulsed drain current: -35A
Gate charge: 19nC
Polarisation: unipolar
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Power dissipation: 1.8W
Drain current: -4.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Pulsed drain current: -35A
Gate charge: 19nC
Polarisation: unipolar
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP2040UFDF-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 0.8W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Power dissipation: 0.8W
Drain current: -4.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Pulsed drain current: -35A
Gate charge: 19nC
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 0.8W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Power dissipation: 0.8W
Drain current: -4.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Pulsed drain current: -35A
Gate charge: 19nC
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2040USD-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -30A; 1.6W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Pulsed drain current: -30A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -30A; 1.6W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Pulsed drain current: -30A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2040USS-13 |
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Hersteller: DIODES INCORPORATED
DMP2040USS-13 SMD P channel transistors
DMP2040USS-13 SMD P channel transistors
Produkt ist nicht verfügbar
DMP2040UVT-13 |
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Hersteller: DIODES INCORPORATED
DMP2040UVT-13 SMD P channel transistors
DMP2040UVT-13 SMD P channel transistors
Produkt ist nicht verfügbar
DMP2040UVT-7 |
Hersteller: DIODES INCORPORATED
DMP2040UVT-7 SMD P channel transistors
DMP2040UVT-7 SMD P channel transistors
Produkt ist nicht verfügbar
DMP2042UCB4-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -16A; 1.4W
Mounting: SMD
Case: U-WLB1010-4
Kind of package: reel; tape
Gate charge: 2.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -16A
Drain-source voltage: -20V
Drain current: -3.7A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -16A; 1.4W
Mounting: SMD
Case: U-WLB1010-4
Kind of package: reel; tape
Gate charge: 2.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -16A
Drain-source voltage: -20V
Drain current: -3.7A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMP2043UCA3-7 |
Hersteller: DIODES INCORPORATED
DMP2043UCA3-7 SMD P channel transistors
DMP2043UCA3-7 SMD P channel transistors
Produkt ist nicht verfügbar
DMP2045U-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 1.2W
Gate charge: 6.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -25A
Case: SOT23
Drain-source voltage: -20V
Drain current: -3.5A
On-state resistance: 90mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 1.2W
Gate charge: 6.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -25A
Case: SOT23
Drain-source voltage: -20V
Drain current: -3.5A
On-state resistance: 90mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP2045U-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23
Mounting: SMD
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: SOT23
Drain-source voltage: -20V
Drain current: -3.1A
On-state resistance: 90mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23
Mounting: SMD
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: SOT23
Drain-source voltage: -20V
Drain current: -3.1A
On-state resistance: 90mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2508 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
200+ | 0.36 EUR |
249+ | 0.29 EUR |
345+ | 0.21 EUR |
404+ | 0.18 EUR |
820+ | 0.087 EUR |
878+ | 0.082 EUR |
9000+ | 0.08 EUR |
DMP2045UFY4-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -25A; 1.49W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 1.49W
Gate charge: 6.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -25A
Case: X2-DFN2015-3
Drain-source voltage: -20V
Drain current: -3.8A
On-state resistance: 0.16Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -25A; 1.49W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 1.49W
Gate charge: 6.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -25A
Case: X2-DFN2015-3
Drain-source voltage: -20V
Drain current: -3.8A
On-state resistance: 0.16Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2045UQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 1.2W
Gate charge: 6.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -25A
Case: SOT23
Drain-source voltage: -20V
Drain current: -3.5A
On-state resistance: 90mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 1.2W
Gate charge: 6.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -25A
Case: SOT23
Drain-source voltage: -20V
Drain current: -3.5A
On-state resistance: 90mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMP2047UCB4-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.2A; Idm: -16A; 1.66W
Mounting: SMD
Case: U-WLB1010-4
Kind of package: reel; tape
Gate charge: 2.3nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -16A
Drain-source voltage: -20V
Drain current: -3.2A
On-state resistance: 60mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.66W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.2A; Idm: -16A; 1.66W
Mounting: SMD
Case: U-WLB1010-4
Kind of package: reel; tape
Gate charge: 2.3nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -16A
Drain-source voltage: -20V
Drain current: -3.2A
On-state resistance: 60mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.66W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMP2065UFDB-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -25A; 1.54W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
Pulsed drain current: -25A
Power dissipation: 1.54W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -25A; 1.54W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
Pulsed drain current: -25A
Power dissipation: 1.54W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP2065UFDB-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.2A; 0.74W; U-DFN2020-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.2A
Power dissipation: 0.74W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.2A; 0.74W; U-DFN2020-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.2A
Power dissipation: 0.74W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2065UQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -15A; 1.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -15A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 10.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -15A; 1.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -15A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 10.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP2066LDMQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Pulsed drain current: -18A
Power dissipation: 1.25W
Case: SOT26
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 10.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Pulsed drain current: -18A
Power dissipation: 1.25W
Case: SOT26
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 10.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2066LSN-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SC59
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Pulsed drain current: -18A
Power dissipation: 1.25W
Case: SC59
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 10.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SC59
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Pulsed drain current: -18A
Power dissipation: 1.25W
Case: SC59
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 10.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2066UFDE-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -25A; 2.03W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.9A
Pulsed drain current: -25A
Power dissipation: 2.03W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 14.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -25A; 2.03W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.9A
Pulsed drain current: -25A
Power dissipation: 2.03W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 14.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2069UFY4-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -12A
Power dissipation: 0.53W
Case: X2-DFN2015-3
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -12A
Power dissipation: 0.53W
Case: X2-DFN2015-3
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2069UFY4Q-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -12A
Power dissipation: 0.53W
Case: X2-DFN2015-3
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -12A
Power dissipation: 0.53W
Case: X2-DFN2015-3
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2070U-7 |
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Hersteller: DIODES INCORPORATED
DMP2070U-7 SMD P channel transistors
DMP2070U-7 SMD P channel transistors
Produkt ist nicht verfügbar
DMP2070UQ-7 |
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Hersteller: DIODES INCORPORATED
DMP2070UQ-7 SMD N channel transistors
DMP2070UQ-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMP2075UFDB-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -25A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -25A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP2075UFDB-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -25A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -25A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2078LCA3-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -2.7A
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -13A
Mounting: SMD
Case: X4-DSN1006-3
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -2.7A
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -13A
Mounting: SMD
Case: X4-DSN1006-3
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP2100UFU-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6
Polarisation: unipolar
Type of transistor: P-MOSFET x2
Power dissipation: 0.9W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Mounting: SMD
Case: U-DFN2030-6
Drain-source voltage: -20V
Drain current: -4.1A
On-state resistance: 75mΩ
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6
Polarisation: unipolar
Type of transistor: P-MOSFET x2
Power dissipation: 0.9W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Mounting: SMD
Case: U-DFN2030-6
Drain-source voltage: -20V
Drain current: -4.1A
On-state resistance: 75mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2520 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
195+ | 0.37 EUR |
266+ | 0.27 EUR |
345+ | 0.21 EUR |
365+ | 0.2 EUR |
DMP2100UQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; 0.8W; SOT23
Application: automotive industry
Polarisation: unipolar
Type of transistor: P-MOSFET
Power dissipation: 0.8W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 75mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; 0.8W; SOT23
Application: automotive industry
Polarisation: unipolar
Type of transistor: P-MOSFET
Power dissipation: 0.8W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 75mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3030 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
343+ | 0.21 EUR |
550+ | 0.13 EUR |
618+ | 0.12 EUR |
715+ | 0.1 EUR |
747+ | 0.096 EUR |
DMP2104LP-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; 0.5W; DFN1411-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.2A
Power dissipation: 0.5W
Case: DFN1411-3
Gate-source voltage: ±12V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; 0.5W; DFN1411-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.2A
Power dissipation: 0.5W
Case: DFN1411-3
Gate-source voltage: ±12V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1458 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
173+ | 0.41 EUR |
213+ | 0.34 EUR |
391+ | 0.18 EUR |
414+ | 0.17 EUR |
DMP2104V-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; Idm: -4A; 0.85W; SOT563
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -4A
Power dissipation: 0.85W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; Idm: -4A; 0.85W; SOT563
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -4A
Power dissipation: 0.85W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMP210DUFB4-7B |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -160mA; Idm: -0.6A; 350mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -160mA
Pulsed drain current: -0.6A
Power dissipation: 0.35W
Case: X2-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -160mA; Idm: -0.6A; 350mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -160mA
Pulsed drain current: -0.6A
Power dissipation: 0.35W
Case: X2-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP2110U-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -15A; 1.2W; SOT23
Mounting: SMD
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Case: SOT23
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -15A
Drain-source voltage: -20V
Drain current: -2.8A
On-state resistance: 0.11Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -15A; 1.2W; SOT23
Mounting: SMD
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Case: SOT23
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -15A
Drain-source voltage: -20V
Drain current: -2.8A
On-state resistance: 0.11Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2110UVT-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.4A; Idm: -15A; 740mW
Mounting: SMD
Power dissipation: 0.74W
Polarisation: unipolar
Kind of package: reel; tape
Case: TSOT26
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -15A
Drain-source voltage: -20V
Drain current: -1.4A
On-state resistance: 0.24Ω
Type of transistor: P-MOSFET x2
Anzahl je Verpackung: 10000 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.4A; Idm: -15A; 740mW
Mounting: SMD
Power dissipation: 0.74W
Polarisation: unipolar
Kind of package: reel; tape
Case: TSOT26
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -15A
Drain-source voltage: -20V
Drain current: -1.4A
On-state resistance: 0.24Ω
Type of transistor: P-MOSFET x2
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP2110UW-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; Idm: -15A; 650mW
Mounting: SMD
Power dissipation: 0.65W
Polarisation: unipolar
Kind of package: reel; tape
Case: SOT323
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -15A
Drain-source voltage: -20V
Drain current: -1.6A
On-state resistance: 0.16Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; Idm: -15A; 650mW
Mounting: SMD
Power dissipation: 0.65W
Polarisation: unipolar
Kind of package: reel; tape
Case: SOT323
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -15A
Drain-source voltage: -20V
Drain current: -1.6A
On-state resistance: 0.16Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2120U-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -20A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -20A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP2120U-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 0.8W; SOT23
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 0.8W; SOT23
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 2.39 EUR |
50+ | 1.43 EUR |
100+ | 0.72 EUR |
230+ | 0.31 EUR |
632+ | 0.11 EUR |
DMP2123L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 123mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 123mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2123LQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 123mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 123mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP2123LQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 123mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 123mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2130L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2330 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
305+ | 0.24 EUR |
590+ | 0.12 EUR |
670+ | 0.11 EUR |
785+ | 0.092 EUR |
835+ | 0.086 EUR |
DMP2130LDM-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.25W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Power dissipation: 1.25W
Case: SOT26
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.25W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Power dissipation: 1.25W
Case: SOT26
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP213DUFA-7B |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -125mA
Pulsed drain current: -0.5A
Power dissipation: 0.36W
Case: X2-DFN0806-3
Gate-source voltage: ±8V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -125mA
Pulsed drain current: -0.5A
Power dissipation: 0.36W
Case: X2-DFN0806-3
Gate-source voltage: ±8V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP2160UFDB-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -13A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -13A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2160UFDBQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -13A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -13A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2160UWQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -10A; 350mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.2A
Pulsed drain current: -10A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -10A; 350mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.2A
Pulsed drain current: -10A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2165UW-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -15A; 700mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -15A
Power dissipation: 0.7W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -15A; 700mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -15A
Power dissipation: 0.7W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP2165UW-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -15A; 0.5W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -15A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -15A; 0.5W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -15A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 735 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
325+ | 0.22 EUR |
530+ | 0.14 EUR |
660+ | 0.11 EUR |
735+ | 0.097 EUR |
3000+ | 0.086 EUR |
DMP2170U-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -13A; 1.28W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -13A
Power dissipation: 1.28W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -13A; 1.28W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -13A
Power dissipation: 1.28W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP2170U-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -13A; 1.28W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -13A
Power dissipation: 1.28W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -13A; 1.28W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -13A
Power dissipation: 1.28W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMP21D0UFB-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.17A; Idm: -5A; 990mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.17A
Pulsed drain current: -5A
Power dissipation: 0.99W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 960mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.17A; Idm: -5A; 990mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.17A
Pulsed drain current: -5A
Power dissipation: 0.99W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 960mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMP21D0UFB-7B |
![]() |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.17A; Idm: -5A; 990mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.17A
Pulsed drain current: -5A
Power dissipation: 0.99W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 960mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.17A; Idm: -5A; 990mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.17A
Pulsed drain current: -5A
Power dissipation: 0.99W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 960mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar