DMP2075UFDB-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2P-CH 20V 3.8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.17 EUR |
| 50000+ | 0.16 EUR |
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Technische Details DMP2075UFDB-13 Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.8A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 10V, Rds On (Max) @ Id, Vgs: 75mOhm @ 2.9A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B).
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Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Pulsed drain current: -25A Power dissipation: 1.4W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 137mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
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DMP2075UFDB-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V |
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| DMP2075UFDB-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Pulsed drain current: -25A Power dissipation: 1.4W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 137mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
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