Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75528) > Seite 1137 nach 1259
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMT6013LFDF-7 | DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 60A; 1.2W; U-DFN2020-6 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: U-DFN2020-6 Pulsed drain current: 60A Drain-source voltage: 60V Drain current: 8A On-state resistance: 21.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.2W Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||
 |
DMT6013LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 60A; 2.1W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.5A Pulsed drain current: 60A Power dissipation: 2.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
| DMT6015LFV-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 60A Drain-source voltage: 60V Drain current: 7.6A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 18.9nC Kind of channel: enhanced Gate-source voltage: ±16V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| DMT6015LFVW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 127A; 2.8W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: PowerDI3333-8 Pulsed drain current: 127A Power dissipation: 2.8W Gate charge: 15.7nC Drain current: 8A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±16V On-state resistance: 22mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| DMT6015LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 60A; 2.7W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Power dissipation: 2.7W On-state resistance: 24mΩ Polarisation: unipolar Drain current: 8.5A Drain-source voltage: 60V Gate charge: 18.9nC Kind of channel: enhanced Gate-source voltage: ±16V Type of transistor: N-MOSFET Pulsed drain current: 60A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||
|
|
DMT6015LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.5A; Idm: 60A; 2.1W; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 60A Drain-source voltage: 60V Drain current: 9.5A On-state resistance: 21mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 18.9nC Kind of channel: enhanced Gate-source voltage: ±16V Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
|
| DMT6016LFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 1.2W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 60A Drain-source voltage: 60V Drain current: 8.9A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
||
| DMT6016LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 1.2W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 60A Drain-source voltage: 60V Drain current: 8.9A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||
| DMT6016LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 2.6W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Power dissipation: 2.6W On-state resistance: 24mΩ Polarisation: unipolar Drain current: 8A Drain-source voltage: 60V Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 120A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||
|
|
DMT6016LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.5A; Idm: 60A; 2.1W; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 60A Drain-source voltage: 60V Drain current: 9.5A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
|
| DMT6017LFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 6.5A; Idm: 50A; 1.76W Mounting: SMD Case: U-DFN2020-6 Power dissipation: 1.76W Kind of package: reel; tape Type of transistor: N-MOSFET Gate-source voltage: ±16V On-state resistance: 23mΩ Pulsed drain current: 50A Gate charge: 15.3nC Polarisation: unipolar Drain current: 6.5A Kind of channel: enhanced Drain-source voltage: 65V Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
||
| DMT6017LFV-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 29A; Idm: 140A; 2.12W Mounting: SMD Drain-source voltage: 65V Drain current: 29A On-state resistance: 23mΩ Type of transistor: N-MOSFET Power dissipation: 2.12W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15.3nC Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 140A Case: PowerDI3333-8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
|
|
DMT6017LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.5A; Idm: 60A; 2.1W; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 60A Drain-source voltage: 60V Drain current: 9.5A On-state resistance: 23mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
|
| DMT6018LDR-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9.1A Pulsed drain current: 50A Power dissipation: 1.2W Case: V-DFN3030-8 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 13.9nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
||
| DMT6018LDR-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9.1A Pulsed drain current: 50A Power dissipation: 1.2W Case: V-DFN3030-8 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 13.9nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||
| DMT6030LFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.4A; Idm: 40A; 1.76W Mounting: SMD Case: U-DFN2020-6 Kind of package: reel; tape Drain-source voltage: 60V Drain current: 5.4A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 1.76W Polarisation: unipolar Gate charge: 9.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
||
|
|
DMT616MLSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 70A; 2.06W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Pulsed drain current: 70A Power dissipation: 2.06W Case: SO8 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 13.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
| DMT64M2LPSW-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16.6A; Idm: 400A; 2.8W Kind of package: reel; tape Pulsed drain current: 400A Power dissipation: 2.8W Gate charge: 46.7nC Polarisation: unipolar Drain current: 16.6A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PowerDI5060-8 On-state resistance: 6.4mΩ Mounting: SMD Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||
| DMT64M8LCG-13 | DIODES INCORPORATED | DMT64M8LCG-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
||
| DMT64M8LSS-13 | DIODES INCORPORATED | DMT64M8LSS-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
||
| DMT67M8LCG-13 | DIODES INCORPORATED | DMT67M8LCG-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
||
| DMT67M8LCG-7 | DIODES INCORPORATED | DMT67M8LCG-7 SMD N channel transistors |
Produkt ist nicht verfügbar |
||
| DMT67M8LCGQ-7 | DIODES INCORPORATED | DMT67M8LCGQ-7 SMD N channel transistors |
Produkt ist nicht verfügbar |
||
| DMT67M8LK3-13 | DIODES INCORPORATED | DMT67M8LK3-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
||
| DMT67M8LPSW-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13.8A; Idm: 320A; 2.8W Kind of package: reel; tape Pulsed drain current: 320A Power dissipation: 2.8W Gate charge: 37.5nC Polarisation: unipolar Drain current: 13.8A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PowerDI5060-8 On-state resistance: 8.5mΩ Mounting: SMD Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||
| DMT67M8LSS-13 | DIODES INCORPORATED | DMT67M8LSS-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
||
| DMT68M8LFV-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 43.3A; Idm: 210A; 2.7W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Drain current: 43.3A Drain-source voltage: 60V Power dissipation: 2.7W Polarisation: unipolar Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 210A On-state resistance: 13.3mΩ Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
||
| DMT68M8LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.2A; Idm: 270A; 2.4W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Drain current: 11.2A Drain-source voltage: 60V Power dissipation: 2.4W Polarisation: unipolar Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 270A On-state resistance: 10.8mΩ Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||
|
|
DMT68M8LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.7A; Idm: 100A; 1.9W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Drain current: 9.7A Drain-source voltage: 60V Power dissipation: 1.9W Polarisation: unipolar Gate charge: 31.8nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 100A On-state resistance: 12mΩ Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
|
| DMT69M5LCG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W Mounting: SMD Case: V-DFN3333-8 Kind of package: reel; tape Drain-source voltage: 60V Drain current: 11.7A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.64W Polarisation: unipolar Gate charge: 28.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 208A Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
||
| DMT69M5LFVWQ-13 | DIODES INCORPORATED | DMT69M5LFVWQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
||
| DMT69M5LH3 | DIODES INCORPORATED | DMT69M5LH3 THT N channel transistors |
Produkt ist nicht verfügbar |
||
| DMT69M8LFV-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 2.2W Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: 60A Mounting: SMD Drain-source voltage: 60V Drain current: 8.9A On-state resistance: 13.3mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 33.5nC Kind of channel: enhanced Gate-source voltage: ±16V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||
| DMT69M8LFV-7 | DIODES INCORPORATED |
DMT69M8LFV-7 SMD N channel transistors |
Produkt ist nicht verfügbar |
||
| DMT8008LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 192A; 2.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 13A Pulsed drain current: 192A Power dissipation: 2.5W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 10.4mΩ Mounting: SMD Gate charge: 37.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||
| DMT8008LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 192A; 2.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 13A Pulsed drain current: 192A Power dissipation: 2.5W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 10.4mΩ Mounting: SMD Gate charge: 37.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
||
| DMT8008LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 66A; Idm: 330A; 2.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 66A Pulsed drain current: 330A Power dissipation: 2.8W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 41.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||
| DMT8008SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 66A; Idm: 330A; 2.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 66A Pulsed drain current: 330A Power dissipation: 2.8W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||
| DMT8012LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 80A; 2.2W Kind of package: reel; tape Drain-source voltage: 80V Drain current: 7.6A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Case: PowerDI3333-8 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||
| DMT8012LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 30A; 2.2W; PowerDI®3333-8 Kind of package: reel; tape Drain-source voltage: 80V Drain current: 30A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PowerDI®3333-8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| DMT8012LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 28A; Idm: 80A; 2.7W; TO252 Kind of package: reel; tape Drain-source voltage: 80V Drain current: 28A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 2.7W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Case: TO252 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||
| DMT8012LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7.2A; Idm: 80A; 2.1W Kind of package: reel; tape Drain-source voltage: 80V Drain current: 7.2A On-state resistance: 21mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Case: PowerDI5060-8 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||
|
|
DMT8012LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7.8A; Idm: 80A; 2W; SO8 Kind of package: reel; tape Drain-source voltage: 80V Drain current: 7.8A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Case: SO8 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
|
| DMTH10H003SPSW-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 117A; Idm: 664A; 2.6W Mounting: SMD Kind of package: reel; tape Gate charge: 85nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 664A Case: PowerDI5060-8 Drain-source voltage: 100V Drain current: 117A On-state resistance: 5mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||
| DMTH10H005LCT | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
 |
DMTH10H005SCT | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 400A; 187W; TO220AB Mounting: THT Kind of package: tube Gate charge: 111.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Case: TO220AB Drain-source voltage: 100V Drain current: 99A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET Power dissipation: 187W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
| DMTH10H009LPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 360A; 3.1W Application: automotive industry Mounting: SMD Kind of package: reel; tape Gate charge: 40.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 360A Case: PowerDI5060-8 Drain-source voltage: 100V Drain current: 11A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Power dissipation: 3.1W Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||
| DMTH10H009SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 350A; 3.2W Mounting: SMD Kind of package: reel; tape Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 350A Case: PowerDI5060-8 Drain-source voltage: 100V Drain current: 11A On-state resistance: 8.9mΩ Type of transistor: N-MOSFET Power dissipation: 3.2W Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||
| DMTH10H009SPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 350A; 3.2W Application: automotive industry Mounting: SMD Kind of package: reel; tape Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 350A Case: PowerDI5060-8 Drain-source voltage: 100V Drain current: 11A On-state resistance: 8.9mΩ Type of transistor: N-MOSFET Power dissipation: 3.2W Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||
| DMTH10H010LCT | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| DMTH10H010LCTB-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 71A; Idm: 400A; 3.9W; TO263AB Mounting: SMD Kind of package: reel; tape Gate charge: 53.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Case: TO263AB Drain-source voltage: 100V Drain current: 71A On-state resistance: 17mΩ Type of transistor: N-MOSFET Power dissipation: 3.9W Polarisation: unipolar Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
||
| DMTH10H010LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.6A; Idm: 250A; 1.5W Mounting: SMD Kind of package: reel; tape Gate charge: 53.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 250A Case: PowerDI5060-8 Drain-source voltage: 100V Drain current: 7.6A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 1.5W Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||
| DMTH10H010SCT | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| DMTH10H010SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; Idm: 250A; 1.5W Mounting: SMD Kind of package: reel; tape Gate charge: 56.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 250A Case: PowerDI5060-8 Drain-source voltage: 100V Drain current: 8.3A On-state resistance: 11.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.5W Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||
| DMTH10H010SPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; Idm: 250A; 1.5W Application: automotive industry Mounting: SMD Kind of package: reel; tape Gate charge: 56.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 250A Case: PowerDI5060-8 Drain-source voltage: 100V Drain current: 8.3A On-state resistance: 11.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.5W Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||
| DMTH10H015LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 37.1A; Idm: 150A; 3.5W; TO252 Mounting: SMD Kind of package: reel; tape Gate charge: 33.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Case: TO252 Drain-source voltage: 100V Drain current: 37.1A On-state resistance: 25mΩ Type of transistor: N-MOSFET Power dissipation: 3.5W Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||
| DMTH10H015LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 120A; 2.8W Mounting: SMD Kind of package: reel; tape Gate charge: 33.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Case: PowerDI5060-8 Drain-source voltage: 100V Drain current: 8A On-state resistance: 25mΩ Type of transistor: N-MOSFET Power dissipation: 2.8W Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||
| DMTH10H017LPD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| DMTH10H017LPDQ-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 9A; Idm: 236A; 1.5W Application: automotive industry Mounting: SMD Kind of package: reel; tape Gate charge: 28.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 236A Case: PowerDI®5060-8 Drain-source voltage: 100V Drain current: 9A On-state resistance: 30.3mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.5W Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||
| DMTH10H025LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 36.6A; Idm: 200A; 3.1W; TO252 Mounting: SMD Kind of package: reel; tape Gate charge: 21nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A Case: TO252 Drain-source voltage: 100V Drain current: 36.6A On-state resistance: 43.7mΩ Type of transistor: N-MOSFET Power dissipation: 3.1W Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
| DMT6013LFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 60A; 1.2W; U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: U-DFN2020-6
Pulsed drain current: 60A
Drain-source voltage: 60V
Drain current: 8A
On-state resistance: 21.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 60A; 1.2W; U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: U-DFN2020-6
Pulsed drain current: 60A
Drain-source voltage: 60V
Drain current: 8A
On-state resistance: 21.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMT6013LSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 60A; 2.1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 60A
Power dissipation: 2.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 60A; 2.1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 60A
Power dissipation: 2.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMT6015LFV-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Drain-source voltage: 60V
Drain current: 7.6A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 18.9nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Drain-source voltage: 60V
Drain current: 7.6A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 18.9nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMT6015LFVW-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 127A; 2.8W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerDI3333-8
Pulsed drain current: 127A
Power dissipation: 2.8W
Gate charge: 15.7nC
Drain current: 8A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 22mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 127A; 2.8W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerDI3333-8
Pulsed drain current: 127A
Power dissipation: 2.8W
Gate charge: 15.7nC
Drain current: 8A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 22mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMT6015LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 60A; 2.7W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 2.7W
On-state resistance: 24mΩ
Polarisation: unipolar
Drain current: 8.5A
Drain-source voltage: 60V
Gate charge: 18.9nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Type of transistor: N-MOSFET
Pulsed drain current: 60A
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 60A; 2.7W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 2.7W
On-state resistance: 24mΩ
Polarisation: unipolar
Drain current: 8.5A
Drain-source voltage: 60V
Gate charge: 18.9nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Type of transistor: N-MOSFET
Pulsed drain current: 60A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMT6015LSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.5A; Idm: 60A; 2.1W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Drain-source voltage: 60V
Drain current: 9.5A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 18.9nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.5A; Idm: 60A; 2.1W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Drain-source voltage: 60V
Drain current: 9.5A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 18.9nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMT6016LFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 1.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Drain-source voltage: 60V
Drain current: 8.9A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 1.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Drain-source voltage: 60V
Drain current: 8.9A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMT6016LFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 1.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Drain-source voltage: 60V
Drain current: 8.9A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 1.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Drain-source voltage: 60V
Drain current: 8.9A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMT6016LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 2.6W
On-state resistance: 24mΩ
Polarisation: unipolar
Drain current: 8A
Drain-source voltage: 60V
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 120A
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 2.6W
On-state resistance: 24mΩ
Polarisation: unipolar
Drain current: 8A
Drain-source voltage: 60V
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 120A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMT6016LSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.5A; Idm: 60A; 2.1W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Drain-source voltage: 60V
Drain current: 9.5A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.5A; Idm: 60A; 2.1W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Drain-source voltage: 60V
Drain current: 9.5A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMT6017LFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 6.5A; Idm: 50A; 1.76W
Mounting: SMD
Case: U-DFN2020-6
Power dissipation: 1.76W
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 23mΩ
Pulsed drain current: 50A
Gate charge: 15.3nC
Polarisation: unipolar
Drain current: 6.5A
Kind of channel: enhanced
Drain-source voltage: 65V
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 6.5A; Idm: 50A; 1.76W
Mounting: SMD
Case: U-DFN2020-6
Power dissipation: 1.76W
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 23mΩ
Pulsed drain current: 50A
Gate charge: 15.3nC
Polarisation: unipolar
Drain current: 6.5A
Kind of channel: enhanced
Drain-source voltage: 65V
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMT6017LFV-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 29A; Idm: 140A; 2.12W
Mounting: SMD
Drain-source voltage: 65V
Drain current: 29A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.12W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.3nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 140A
Case: PowerDI3333-8
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 29A; Idm: 140A; 2.12W
Mounting: SMD
Drain-source voltage: 65V
Drain current: 29A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.12W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.3nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 140A
Case: PowerDI3333-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMT6017LSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.5A; Idm: 60A; 2.1W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Drain-source voltage: 60V
Drain current: 9.5A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.5A; Idm: 60A; 2.1W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Drain-source voltage: 60V
Drain current: 9.5A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMT6018LDR-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.1A
Pulsed drain current: 50A
Power dissipation: 1.2W
Case: V-DFN3030-8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.1A
Pulsed drain current: 50A
Power dissipation: 1.2W
Case: V-DFN3030-8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMT6018LDR-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.1A
Pulsed drain current: 50A
Power dissipation: 1.2W
Case: V-DFN3030-8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.1A
Pulsed drain current: 50A
Power dissipation: 1.2W
Case: V-DFN3030-8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMT6030LFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.4A; Idm: 40A; 1.76W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 5.4A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.76W
Polarisation: unipolar
Gate charge: 9.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.4A; Idm: 40A; 1.76W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 5.4A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.76W
Polarisation: unipolar
Gate charge: 9.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMT616MLSS-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 70A; 2.06W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 70A
Power dissipation: 2.06W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 70A; 2.06W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 70A
Power dissipation: 2.06W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMT64M2LPSW-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16.6A; Idm: 400A; 2.8W
Kind of package: reel; tape
Pulsed drain current: 400A
Power dissipation: 2.8W
Gate charge: 46.7nC
Polarisation: unipolar
Drain current: 16.6A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PowerDI5060-8
On-state resistance: 6.4mΩ
Mounting: SMD
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16.6A; Idm: 400A; 2.8W
Kind of package: reel; tape
Pulsed drain current: 400A
Power dissipation: 2.8W
Gate charge: 46.7nC
Polarisation: unipolar
Drain current: 16.6A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PowerDI5060-8
On-state resistance: 6.4mΩ
Mounting: SMD
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMT64M8LCG-13 |
Hersteller: DIODES INCORPORATED
DMT64M8LCG-13 SMD N channel transistors
DMT64M8LCG-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMT64M8LSS-13 |
Hersteller: DIODES INCORPORATED
DMT64M8LSS-13 SMD N channel transistors
DMT64M8LSS-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMT67M8LCG-13 |
Hersteller: DIODES INCORPORATED
DMT67M8LCG-13 SMD N channel transistors
DMT67M8LCG-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMT67M8LCG-7 |
Hersteller: DIODES INCORPORATED
DMT67M8LCG-7 SMD N channel transistors
DMT67M8LCG-7 SMD N channel transistors
Produkt ist nicht verfügbar
| DMT67M8LCGQ-7 |
Hersteller: DIODES INCORPORATED
DMT67M8LCGQ-7 SMD N channel transistors
DMT67M8LCGQ-7 SMD N channel transistors
Produkt ist nicht verfügbar
| DMT67M8LK3-13 |
Hersteller: DIODES INCORPORATED
DMT67M8LK3-13 SMD N channel transistors
DMT67M8LK3-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMT67M8LPSW-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13.8A; Idm: 320A; 2.8W
Kind of package: reel; tape
Pulsed drain current: 320A
Power dissipation: 2.8W
Gate charge: 37.5nC
Polarisation: unipolar
Drain current: 13.8A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PowerDI5060-8
On-state resistance: 8.5mΩ
Mounting: SMD
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13.8A; Idm: 320A; 2.8W
Kind of package: reel; tape
Pulsed drain current: 320A
Power dissipation: 2.8W
Gate charge: 37.5nC
Polarisation: unipolar
Drain current: 13.8A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PowerDI5060-8
On-state resistance: 8.5mΩ
Mounting: SMD
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMT67M8LSS-13 |
Hersteller: DIODES INCORPORATED
DMT67M8LSS-13 SMD N channel transistors
DMT67M8LSS-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMT68M8LFV-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43.3A; Idm: 210A; 2.7W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Drain current: 43.3A
Drain-source voltage: 60V
Power dissipation: 2.7W
Polarisation: unipolar
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 210A
On-state resistance: 13.3mΩ
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43.3A; Idm: 210A; 2.7W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Drain current: 43.3A
Drain-source voltage: 60V
Power dissipation: 2.7W
Polarisation: unipolar
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 210A
On-state resistance: 13.3mΩ
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| DMT68M8LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.2A; Idm: 270A; 2.4W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Drain current: 11.2A
Drain-source voltage: 60V
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 270A
On-state resistance: 10.8mΩ
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.2A; Idm: 270A; 2.4W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Drain current: 11.2A
Drain-source voltage: 60V
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 270A
On-state resistance: 10.8mΩ
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMT68M8LSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.7A; Idm: 100A; 1.9W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Drain current: 9.7A
Drain-source voltage: 60V
Power dissipation: 1.9W
Polarisation: unipolar
Gate charge: 31.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 100A
On-state resistance: 12mΩ
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.7A; Idm: 100A; 1.9W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Drain current: 9.7A
Drain-source voltage: 60V
Power dissipation: 1.9W
Polarisation: unipolar
Gate charge: 31.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 100A
On-state resistance: 12mΩ
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMT69M5LCG-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W
Mounting: SMD
Case: V-DFN3333-8
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 11.7A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.64W
Polarisation: unipolar
Gate charge: 28.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 208A
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W
Mounting: SMD
Case: V-DFN3333-8
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 11.7A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.64W
Polarisation: unipolar
Gate charge: 28.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 208A
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| DMT69M5LFVWQ-13 |
Hersteller: DIODES INCORPORATED
DMT69M5LFVWQ-13 SMD N channel transistors
DMT69M5LFVWQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMT69M5LH3 |
Hersteller: DIODES INCORPORATED
DMT69M5LH3 THT N channel transistors
DMT69M5LH3 THT N channel transistors
Produkt ist nicht verfügbar
| DMT69M8LFV-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 2.2W
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: 60A
Mounting: SMD
Drain-source voltage: 60V
Drain current: 8.9A
On-state resistance: 13.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 2.2W
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: 60A
Mounting: SMD
Drain-source voltage: 60V
Drain current: 8.9A
On-state resistance: 13.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMT69M8LFV-7 |
|
Hersteller: DIODES INCORPORATED
DMT69M8LFV-7 SMD N channel transistors
DMT69M8LFV-7 SMD N channel transistors
Produkt ist nicht verfügbar
| DMT8008LFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 192A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 13A
Pulsed drain current: 192A
Power dissipation: 2.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 37.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 192A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 13A
Pulsed drain current: 192A
Power dissipation: 2.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 37.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMT8008LFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 192A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 13A
Pulsed drain current: 192A
Power dissipation: 2.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 37.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 192A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 13A
Pulsed drain current: 192A
Power dissipation: 2.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 37.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| DMT8008LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 66A; Idm: 330A; 2.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 66A
Pulsed drain current: 330A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 41.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 66A; Idm: 330A; 2.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 66A
Pulsed drain current: 330A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 41.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMT8008SPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 66A; Idm: 330A; 2.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 66A
Pulsed drain current: 330A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 66A; Idm: 330A; 2.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 66A
Pulsed drain current: 330A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMT8012LFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 80A; 2.2W
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 7.6A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 80A; 2.2W
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 7.6A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMT8012LFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; 2.2W; PowerDI®3333-8
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 30A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PowerDI®3333-8
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; 2.2W; PowerDI®3333-8
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 30A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PowerDI®3333-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMT8012LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 28A; Idm: 80A; 2.7W; TO252
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 28A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: TO252
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 28A; Idm: 80A; 2.7W; TO252
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 28A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: TO252
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMT8012LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.2A; Idm: 80A; 2.1W
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 7.2A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: PowerDI5060-8
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.2A; Idm: 80A; 2.1W
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 7.2A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: PowerDI5060-8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMT8012LSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.8A; Idm: 80A; 2W; SO8
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 7.8A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.8A; Idm: 80A; 2W; SO8
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 7.8A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH10H003SPSW-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 117A; Idm: 664A; 2.6W
Mounting: SMD
Kind of package: reel; tape
Gate charge: 85nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 664A
Case: PowerDI5060-8
Drain-source voltage: 100V
Drain current: 117A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 117A; Idm: 664A; 2.6W
Mounting: SMD
Kind of package: reel; tape
Gate charge: 85nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 664A
Case: PowerDI5060-8
Drain-source voltage: 100V
Drain current: 117A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH10H005LCT |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMTH10H005SCT |
|
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 400A; 187W; TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 111.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: TO220AB
Drain-source voltage: 100V
Drain current: 99A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 187W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 400A; 187W; TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 111.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: TO220AB
Drain-source voltage: 100V
Drain current: 99A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 187W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMTH10H009LPSQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 360A; 3.1W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Gate charge: 40.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Case: PowerDI5060-8
Drain-source voltage: 100V
Drain current: 11A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 360A; 3.1W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Gate charge: 40.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Case: PowerDI5060-8
Drain-source voltage: 100V
Drain current: 11A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH10H009SPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 350A; 3.2W
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 350A
Case: PowerDI5060-8
Drain-source voltage: 100V
Drain current: 11A
On-state resistance: 8.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.2W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 350A; 3.2W
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 350A
Case: PowerDI5060-8
Drain-source voltage: 100V
Drain current: 11A
On-state resistance: 8.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.2W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH10H009SPSQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 350A; 3.2W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 350A
Case: PowerDI5060-8
Drain-source voltage: 100V
Drain current: 11A
On-state resistance: 8.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.2W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 350A; 3.2W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 350A
Case: PowerDI5060-8
Drain-source voltage: 100V
Drain current: 11A
On-state resistance: 8.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.2W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH10H010LCT |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMTH10H010LCTB-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; Idm: 400A; 3.9W; TO263AB
Mounting: SMD
Kind of package: reel; tape
Gate charge: 53.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: TO263AB
Drain-source voltage: 100V
Drain current: 71A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.9W
Polarisation: unipolar
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; Idm: 400A; 3.9W; TO263AB
Mounting: SMD
Kind of package: reel; tape
Gate charge: 53.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: TO263AB
Drain-source voltage: 100V
Drain current: 71A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.9W
Polarisation: unipolar
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
| DMTH10H010LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.6A; Idm: 250A; 1.5W
Mounting: SMD
Kind of package: reel; tape
Gate charge: 53.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 250A
Case: PowerDI5060-8
Drain-source voltage: 100V
Drain current: 7.6A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.6A; Idm: 250A; 1.5W
Mounting: SMD
Kind of package: reel; tape
Gate charge: 53.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 250A
Case: PowerDI5060-8
Drain-source voltage: 100V
Drain current: 7.6A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH10H010SCT |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMTH10H010SPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; Idm: 250A; 1.5W
Mounting: SMD
Kind of package: reel; tape
Gate charge: 56.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 250A
Case: PowerDI5060-8
Drain-source voltage: 100V
Drain current: 8.3A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; Idm: 250A; 1.5W
Mounting: SMD
Kind of package: reel; tape
Gate charge: 56.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 250A
Case: PowerDI5060-8
Drain-source voltage: 100V
Drain current: 8.3A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH10H010SPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; Idm: 250A; 1.5W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Gate charge: 56.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 250A
Case: PowerDI5060-8
Drain-source voltage: 100V
Drain current: 8.3A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; Idm: 250A; 1.5W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Gate charge: 56.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 250A
Case: PowerDI5060-8
Drain-source voltage: 100V
Drain current: 8.3A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH10H015LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 37.1A; Idm: 150A; 3.5W; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 33.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: TO252
Drain-source voltage: 100V
Drain current: 37.1A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.5W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 37.1A; Idm: 150A; 3.5W; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 33.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: TO252
Drain-source voltage: 100V
Drain current: 37.1A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.5W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH10H015LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 120A; 2.8W
Mounting: SMD
Kind of package: reel; tape
Gate charge: 33.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Case: PowerDI5060-8
Drain-source voltage: 100V
Drain current: 8A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 120A; 2.8W
Mounting: SMD
Kind of package: reel; tape
Gate charge: 33.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Case: PowerDI5060-8
Drain-source voltage: 100V
Drain current: 8A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH10H017LPD-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMTH10H017LPDQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 9A; Idm: 236A; 1.5W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Gate charge: 28.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 236A
Case: PowerDI®5060-8
Drain-source voltage: 100V
Drain current: 9A
On-state resistance: 30.3mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.5W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 9A; Idm: 236A; 1.5W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Gate charge: 28.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 236A
Case: PowerDI®5060-8
Drain-source voltage: 100V
Drain current: 9A
On-state resistance: 30.3mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.5W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH10H025LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36.6A; Idm: 200A; 3.1W; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Case: TO252
Drain-source voltage: 100V
Drain current: 36.6A
On-state resistance: 43.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36.6A; Idm: 200A; 3.1W; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Case: TO252
Drain-source voltage: 100V
Drain current: 36.6A
On-state resistance: 43.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar