DMT8012LPS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 80V 9A/65A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.67 EUR |
| 5000+ | 0.64 EUR |
| 12500+ | 0.61 EUR |
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Technische Details DMT8012LPS-13 Diodes Incorporated
Description: MOSFET N-CH 80V 9A/65A PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 65A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V, Power Dissipation (Max): 2.1W (Ta), 113W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V.
Weitere Produktangebote DMT8012LPS-13 nach Preis ab 0.69 EUR bis 1.59 EUR
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DMT8012LPS-13 | Hersteller : Diodes Incorporated |
MOSFETs N-Ch Enh Mode FET 80V 20Vgss 80A |
auf Bestellung 1462 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT8012LPS-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 80V 9A 8-Pin PowerDI EP T/R |
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| DMT8012LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7.2A; Idm: 80A; 2.1W Kind of package: reel; tape Drain-source voltage: 80V Drain current: 7.2A On-state resistance: 21mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Case: PowerDI5060-8 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMT8012LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7.2A; Idm: 80A; 2.1W Kind of package: reel; tape Drain-source voltage: 80V Drain current: 7.2A On-state resistance: 21mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Case: PowerDI5060-8 |
Produkt ist nicht verfügbar |