DMT6016LPS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V 10.6A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 1.23W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.35 EUR |
| 5000+ | 0.33 EUR |
| 12500+ | 0.31 EUR |
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Technische Details DMT6016LPS-13 Diodes Incorporated
Description: MOSFET N-CH 60V 10.6A PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V, Power Dissipation (Max): 1.23W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V.
Weitere Produktangebote DMT6016LPS-13 nach Preis ab 0.33 EUR bis 0.93 EUR
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DMT6016LPS-13 | Hersteller : Diodes Incorporated |
MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A |
auf Bestellung 13455 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT6016LPS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 10.6A PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Power Dissipation (Max): 1.23W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V |
auf Bestellung 19701 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6016LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 2.6W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Power dissipation: 2.6W On-state resistance: 24mΩ Polarisation: unipolar Drain current: 8A Drain-source voltage: 60V Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 120A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMT6016LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 2.6W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Power dissipation: 2.6W On-state resistance: 24mΩ Polarisation: unipolar Drain current: 8A Drain-source voltage: 60V Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 120A |
Produkt ist nicht verfügbar |