auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.28 EUR |
| 10+ | 3.56 EUR |
| 100+ | 2.82 EUR |
| 250+ | 2.69 EUR |
| 500+ | 2.38 EUR |
| 1000+ | 2.06 EUR |
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Technische Details DMTH10H005SCT Diodes Incorporated
Description: MOSFET N-CH 100V 140A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 13A, 10V, Power Dissipation (Max): 187W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 111.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8474 pF @ 50 V.
Weitere Produktangebote DMTH10H005SCT nach Preis ab 3.61 EUR bis 4.35 EUR
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DMTH10H005SCT | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 100V 140A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 13A, 10V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 111.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8474 pF @ 50 V |
auf Bestellung 32 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH10H005SCT | Hersteller : DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 400A; 187W; TO220AB Mounting: THT Kind of package: tube Gate charge: 111.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Case: TO220AB Drain-source voltage: 100V Drain current: 99A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET Power dissipation: 187W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMTH10H005SCT | Hersteller : DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 400A; 187W; TO220AB Mounting: THT Kind of package: tube Gate charge: 111.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Case: TO220AB Drain-source voltage: 100V Drain current: 99A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET Power dissipation: 187W Polarisation: unipolar |
Produkt ist nicht verfügbar |