auf Bestellung 36859 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.51 EUR |
| 10+ | 1.31 EUR |
| 100+ | 0.91 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.57 EUR |
| 5000+ | 0.54 EUR |
| 10000+ | 0.52 EUR |
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Technische Details DMT6018LDR-13 Diodes Incorporated
Description: MOSFET 2N-CH 60V 8.8A 8VDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.9W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V, Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: V-DFN3030-8.
Weitere Produktangebote DMT6018LDR-13 nach Preis ab 0.49 EUR bis 1.5 EUR
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| DMT6018LDR-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 60V 8.8A 8VDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 |
auf Bestellung 70000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6018LDR-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 8.8A 8VDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 |
auf Bestellung 77943 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6018LDR-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9.1A Pulsed drain current: 50A Power dissipation: 1.2W Case: V-DFN3030-8 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 13.9nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMT6018LDR-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9.1A Pulsed drain current: 50A Power dissipation: 1.2W Case: V-DFN3030-8 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 13.9nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |