Type-UX;-;-8.jpg "DMT6015LFVW-7")
DMT6015LFVW-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 41V~60V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31.8A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 2.8W (Ta), 28.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.3 EUR |
| 6000+ | 0.29 EUR |
| 10000+ | 0.27 EUR |
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Technische Details DMT6015LFVW-7 Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31.8A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V, Power Dissipation (Max): 2.8W (Ta), 28.4W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 30 V.
Weitere Produktangebote DMT6015LFVW-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMT6015LFVW-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 127A; 2.8W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: PowerDI3333-8 Pulsed drain current: 127A Power dissipation: 2.8W Gate charge: 15.7nC Drain current: 8A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±16V On-state resistance: 22mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMT6015LFVW-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V~60V PowerDI3333-8/SWP T&R 2K |
Produkt ist nicht verfügbar |
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| DMT6015LFVW-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 127A; 2.8W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: PowerDI3333-8 Pulsed drain current: 127A Power dissipation: 2.8W Gate charge: 15.7nC Drain current: 8A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±16V On-state resistance: 22mΩ |
Produkt ist nicht verfügbar |