Technische Details DMT6030LFDF-13 Diodes Inc
Description: MOSFET N-CH 60V 6.8A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), Rds On (Max) @ Id, Vgs: 25.5mOhm @ 6.5A, 10V, Power Dissipation (Max): 860mW (Ta), 9.62W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 30 V.
Weitere Produktangebote DMT6030LFDF-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DMT6030LFDF-13 | Hersteller : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 5.4A; Idm: 40A; 1.76W Mounting: SMD Case: U-DFN2020-6 Kind of package: reel; tape Drain-source voltage: 60V Drain current: 5.4A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 1.76W Polarisation: unipolar Gate charge: 9.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMT6030LFDF-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 6.8A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 25.5mOhm @ 6.5A, 10V Power Dissipation (Max): 860mW (Ta), 9.62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 30 V |
Produkt ist nicht verfügbar |
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DMT6030LFDF-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V 60V U-DFN2020-6 T&R 10K |
Produkt ist nicht verfügbar |
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| DMT6030LFDF-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.4A; Idm: 40A; 1.76W Mounting: SMD Case: U-DFN2020-6 Kind of package: reel; tape Drain-source voltage: 60V Drain current: 5.4A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 1.76W Polarisation: unipolar Gate charge: 9.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A |
Produkt ist nicht verfügbar |