DMTH10H015LK3-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 37.1A; Idm: 150A; 3.5W; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 33.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: TO252
Drain-source voltage: 100V
Drain current: 37.1A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.5W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
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Technische Details DMTH10H015LK3-13 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 37.1A; Idm: 150A; 3.5W; TO252, Mounting: SMD, Kind of package: reel; tape, Gate charge: 33.3nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 150A, Case: TO252, Drain-source voltage: 100V, Drain current: 37.1A, On-state resistance: 25mΩ, Type of transistor: N-MOSFET, Power dissipation: 3.5W, Polarisation: unipolar, Anzahl je Verpackung: 2500 Stücke.
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Preis ohne MwSt |
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DMTH10H015LK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V 52.5A TO252-4L |
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DMTH10H015LK3-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 61V-100V |
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| DMTH10H015LK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 37.1A; Idm: 150A; 3.5W; TO252 Mounting: SMD Kind of package: reel; tape Gate charge: 33.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Case: TO252 Drain-source voltage: 100V Drain current: 37.1A On-state resistance: 25mΩ Type of transistor: N-MOSFET Power dissipation: 3.5W Polarisation: unipolar |
Produkt ist nicht verfügbar |