Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75528) > Seite 1138 nach 1259
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMTH10H025LK3Q-13 | DIODES INCORPORATED |
 DMTH10H025LK3Q-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH10H025LPSQ-13 | DIODES INCORPORATED |
DMTH10H025LPSQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH10H025SK3-13 | DIODES INCORPORATED |
DMTH10H025SK3-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH10H032LPDWQ-13 | DIODES INCORPORATED |
DMTH10H032LPDWQ-13 Multi channel transistors |
Produkt ist nicht verfügbar |
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| DMTH10H032LPSWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Polarisation: unipolar Kind of channel: enhanced Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMTH10H032SPSWQ-13 | DIODES INCORPORATED |
DMTH10H032SPSWQ-13 Multi channel transistors |
Produkt ist nicht verfügbar |
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| DMTH10H1M7STLWQ-13 | DIODES INCORPORATED |
DMTH10H1M7STLWQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH10H4M5LPS-13 | DIODES INCORPORATED |
DMTH10H4M5LPS-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH10H4M6SPS-13 | DIODES INCORPORATED |
DMTH10H4M6SPS-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH12H007SPS-13 | DIODES INCORPORATED | DMTH12H007SPS-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH15H017LPSWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Polarisation: unipolar Kind of channel: enhanced Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMTH15H017SPS-13 | DIODES INCORPORATED | DMTH15H017SPS-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH15H017SPSWQ-13 | DIODES INCORPORATED | DMTH15H017SPSWQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH3002LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 240A; Idm: 400A; 2.5W Mounting: SMD Case: PowerDI5060-8 Pulsed drain current: 400A Power dissipation: 2.5W Gate charge: 77nC Polarisation: unipolar Drain current: 240A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±16V Kind of package: reel; tape On-state resistance: 2.5mΩ Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH3004LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 250A; 2.5W Mounting: SMD Pulsed drain current: 250A Power dissipation: 2.5W Gate charge: 44nC Polarisation: unipolar Drain current: 10A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Kind of package: reel; tape Case: PowerDI3333-8 On-state resistance: 8.5mΩ Gate-source voltage: ±16V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMTH3004LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 250A; 2.5W Mounting: SMD Pulsed drain current: 250A Power dissipation: 2.5W Gate charge: 44nC Polarisation: unipolar Drain current: 10A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Kind of package: reel; tape Case: PowerDI3333-8 On-state resistance: 8.5mΩ Gate-source voltage: ±16V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMTH3004LFGQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 250A; 2.5W Mounting: SMD Pulsed drain current: 250A Power dissipation: 2.5W Gate charge: 44nC Polarisation: unipolar Drain current: 10A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Kind of package: reel; tape Case: PowerDI3333-8 On-state resistance: 8.5mΩ Gate-source voltage: ±16V Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| DMTH3004LK3Q-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 15A; Idm: 105A; 107W; TO252 Mounting: SMD Pulsed drain current: 105A Power dissipation: 107W Gate charge: 44nC Polarisation: unipolar Drain current: 15A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Kind of package: reel; tape Case: TO252 On-state resistance: 7mΩ Gate-source voltage: ±20/±-16V Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH3004LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 180A; 3.2W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Power dissipation: 3.2W On-state resistance: 6mΩ Polarisation: unipolar Drain current: 18A Drain-source voltage: 30V Gate charge: 43.7nC Kind of channel: enhanced Gate-source voltage: -16...20V Type of transistor: N-MOSFET Pulsed drain current: 180A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH3004LPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 180A; 3.2W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Power dissipation: 3.2W On-state resistance: 6mΩ Polarisation: unipolar Drain current: 18A Drain-source voltage: 30V Gate charge: 43.7nC Kind of channel: enhanced Gate-source voltage: -16...20V Type of transistor: N-MOSFET Pulsed drain current: 180A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH31M7LPSQ-13 | DIODES INCORPORATED | DMTH31M7LPSQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH32M5LPSQ-13 | DIODES INCORPORATED |
DMTH32M5LPSQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH4004LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4004LK3Q-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 3.9W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 200A Power dissipation: 3.9W Case: TO252 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 83nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4004LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 21A Pulsed drain current: 100A Power dissipation: 2.6W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 82.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4004LPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 21A Pulsed drain current: 100A Power dissipation: 2.6W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 82.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4004SCTB-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 200A Power dissipation: 4.7W Case: TO263AB Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 68.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4004SCTBQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 200A Power dissipation: 4.7W Case: TO263AB Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 68.6nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4004SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 26A; Idm: 350A; 3.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 26A Pulsed drain current: 350A Power dissipation: 3.6W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 68.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4004SPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 26A; Idm: 350A; 3.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 26A Pulsed drain current: 350A Power dissipation: 3.6W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 68.6nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4005SK3Q-13 | DIODES INCORPORATED |
DMTH4005SK3Q-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH4005SPS-13 | DIODES INCORPORATED |
DMTH4005SPS-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH4005SPSQ-13 | DIODES INCORPORATED |
DMTH4005SPSQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH4007LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4007LK3Q-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 13.9A; Idm: 80A; 2.6W; TO252 Mounting: SMD Kind of package: reel; tape Case: TO252 Power dissipation: 2.6W Drain-source voltage: 40V Drain current: 13.9A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 29.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4007LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Polarisation: unipolar Kind of channel: enhanced Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4007LPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 11A; Idm: 340A; 2.7W Mounting: SMD Kind of package: reel; tape Case: PowerDI5060-8 Power dissipation: 2.7W Drain-source voltage: 40V Drain current: 11A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 29.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 340A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4007SPD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 11.9A; Idm: 90A; 2.6W Mounting: SMD Kind of package: reel; tape Case: PowerDI5060-8 Power dissipation: 2.6W Polarisation: unipolar Drain current: 11.9A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 8.6mΩ Pulsed drain current: 90A Gate charge: 41.9nC Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4007SPDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 11.9A; Idm: 90A; 2.6W Mounting: SMD Kind of package: reel; tape Case: PowerDI5060-8 Power dissipation: 2.6W Polarisation: unipolar Drain current: 11.9A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 8.6mΩ Pulsed drain current: 90A Gate charge: 41.9nC Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4007SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 13.1A; Idm: 200A; 2.8W Mounting: SMD Kind of package: reel; tape Case: PowerDI5060-8 Power dissipation: 2.8W Polarisation: unipolar Drain current: 13.1A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 7.6mΩ Pulsed drain current: 200A Gate charge: 41.9nC Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4008LFDFW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 8.2A Pulsed drain current: 80A Power dissipation: 2.35W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 14.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMTH4008LFDFWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 8.2A Pulsed drain current: 80A Power dissipation: 2.35W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 14.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMTH4008LFDFWQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 8.2A Pulsed drain current: 80A Power dissipation: 2.35W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 14.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMTH4008LPDW-13 | DIODES INCORPORATED | DMTH4008LPDW-13 Multi channel transistors |
Produkt ist nicht verfügbar |
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| DMTH4008LPDWQ-13 | DIODES INCORPORATED |
DMTH4008LPDWQ-13 Multi channel transistors |
Produkt ist nicht verfügbar |
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| DMTH4008LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 10.2A Pulsed drain current: 110A Power dissipation: 2.99W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 15.3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMTH4008LPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 10.2A Pulsed drain current: 110A Power dissipation: 2.99W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 15.3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMTH4011SPD-13 | DIODES INCORPORATED |
DMTH4011SPD-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH4011SPDQ-13 | DIODES INCORPORATED |
DMTH4011SPDQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH4014LDVW-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.2A; Idm: 110A; 2.6W Case: PowerDI3333-8 Mounting: SMD On-state resistance: 25mΩ Kind of package: reel; tape Power dissipation: 2.6W Polarisation: unipolar Gate charge: 11.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 110A Drain-source voltage: 40V Drain current: 7.2A Type of transistor: N-MOSFET x2 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4014LDVWQ-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.2A; Idm: 110A; 2.6W Case: PowerDI3333-8 Mounting: SMD On-state resistance: 25mΩ Kind of package: reel; tape Power dissipation: 2.6W Polarisation: unipolar Gate charge: 11.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 110A Drain-source voltage: 40V Drain current: 7.2A Type of transistor: N-MOSFET x2 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4014LFVWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.1A; Idm: 180A; 3.1W Case: PowerDI3333-8 Mounting: SMD On-state resistance: 26mΩ Kind of package: reel; tape Power dissipation: 3.1W Polarisation: unipolar Gate charge: 11.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 180A Drain-source voltage: 40V Drain current: 8.1A Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4014LFVWQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.1A; Idm: 180A; 3.1W Case: PowerDI3333-8 Mounting: SMD On-state resistance: 26mΩ Kind of package: reel; tape Power dissipation: 3.1W Polarisation: unipolar Gate charge: 11.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 180A Drain-source voltage: 40V Drain current: 8.1A Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4014LPD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 7.5A; Idm: 174A; 2.4W Case: PowerDI5060-8 Mounting: SMD On-state resistance: 25mΩ Kind of package: reel; tape Power dissipation: 2.4W Polarisation: unipolar Gate charge: 10.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 174A Drain-source voltage: 40V Drain current: 7.5A Type of transistor: N-MOSFET Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4014LPDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 7.5A; Idm: 174A; 2.4W Case: PowerDI5060-8 Mounting: SMD On-state resistance: 25mΩ Kind of package: reel; tape Power dissipation: 2.4W Polarisation: unipolar Gate charge: 10.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 174A Drain-source voltage: 40V Drain current: 7.5A Type of transistor: N-MOSFET Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH41M8SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 3.03W Mounting: SMD Drain-source voltage: 40V Drain current: 100A On-state resistance: 1.8mΩ Type of transistor: N-MOSFET Power dissipation: 3.03W Polarisation: unipolar Kind of package: reel; tape Gate charge: 79.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Case: PowerDI5060-8 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH41M8SPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 3.03W Mounting: SMD Drain-source voltage: 40V Drain current: 100A On-state resistance: 1.8mΩ Type of transistor: N-MOSFET Power dissipation: 3.03W Polarisation: unipolar Kind of package: reel; tape Gate charge: 79.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Case: PowerDI5060-8 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH43M8LFGQ-13 | DIODES INCORPORATED |
DMTH43M8LFGQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH43M8LFGQ-7 | DIODES INCORPORATED |
DMTH43M8LFGQ-7 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH43M8LK3-13 | DIODES INCORPORATED |
DMTH43M8LK3-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
| DMTH10H025LK3Q-13 |
|
Hersteller: DIODES INCORPORATED
DMTH10H025LK3Q-13 SMD N channel transistors
DMTH10H025LK3Q-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH10H025LPSQ-13 |
|
Hersteller: DIODES INCORPORATED
DMTH10H025LPSQ-13 SMD N channel transistors
DMTH10H025LPSQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH10H025SK3-13 |
|
Hersteller: DIODES INCORPORATED
DMTH10H025SK3-13 SMD N channel transistors
DMTH10H025SK3-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH10H032LPDWQ-13 |
|
Hersteller: DIODES INCORPORATED
DMTH10H032LPDWQ-13 Multi channel transistors
DMTH10H032LPDWQ-13 Multi channel transistors
Produkt ist nicht verfügbar
| DMTH10H032LPSWQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMTH10H032SPSWQ-13 |
|
Hersteller: DIODES INCORPORATED
DMTH10H032SPSWQ-13 Multi channel transistors
DMTH10H032SPSWQ-13 Multi channel transistors
Produkt ist nicht verfügbar
| DMTH10H1M7STLWQ-13 |
|
Hersteller: DIODES INCORPORATED
DMTH10H1M7STLWQ-13 SMD N channel transistors
DMTH10H1M7STLWQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH10H4M5LPS-13 |
|
Hersteller: DIODES INCORPORATED
DMTH10H4M5LPS-13 SMD N channel transistors
DMTH10H4M5LPS-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH10H4M6SPS-13 |
|
Hersteller: DIODES INCORPORATED
DMTH10H4M6SPS-13 SMD N channel transistors
DMTH10H4M6SPS-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH12H007SPS-13 |
Hersteller: DIODES INCORPORATED
DMTH12H007SPS-13 SMD N channel transistors
DMTH12H007SPS-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH15H017LPSWQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMTH15H017SPS-13 |
Hersteller: DIODES INCORPORATED
DMTH15H017SPS-13 SMD N channel transistors
DMTH15H017SPS-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH15H017SPSWQ-13 |
Hersteller: DIODES INCORPORATED
DMTH15H017SPSWQ-13 SMD N channel transistors
DMTH15H017SPSWQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH3002LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 240A; Idm: 400A; 2.5W
Mounting: SMD
Case: PowerDI5060-8
Pulsed drain current: 400A
Power dissipation: 2.5W
Gate charge: 77nC
Polarisation: unipolar
Drain current: 240A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
Kind of package: reel; tape
On-state resistance: 2.5mΩ
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 240A; Idm: 400A; 2.5W
Mounting: SMD
Case: PowerDI5060-8
Pulsed drain current: 400A
Power dissipation: 2.5W
Gate charge: 77nC
Polarisation: unipolar
Drain current: 240A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
Kind of package: reel; tape
On-state resistance: 2.5mΩ
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH3004LFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 250A; 2.5W
Mounting: SMD
Pulsed drain current: 250A
Power dissipation: 2.5W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: PowerDI3333-8
On-state resistance: 8.5mΩ
Gate-source voltage: ±16V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 250A; 2.5W
Mounting: SMD
Pulsed drain current: 250A
Power dissipation: 2.5W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: PowerDI3333-8
On-state resistance: 8.5mΩ
Gate-source voltage: ±16V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMTH3004LFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 250A; 2.5W
Mounting: SMD
Pulsed drain current: 250A
Power dissipation: 2.5W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: PowerDI3333-8
On-state resistance: 8.5mΩ
Gate-source voltage: ±16V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 250A; 2.5W
Mounting: SMD
Pulsed drain current: 250A
Power dissipation: 2.5W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: PowerDI3333-8
On-state resistance: 8.5mΩ
Gate-source voltage: ±16V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMTH3004LFGQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 250A; 2.5W
Mounting: SMD
Pulsed drain current: 250A
Power dissipation: 2.5W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: PowerDI3333-8
On-state resistance: 8.5mΩ
Gate-source voltage: ±16V
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 250A; 2.5W
Mounting: SMD
Pulsed drain current: 250A
Power dissipation: 2.5W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: PowerDI3333-8
On-state resistance: 8.5mΩ
Gate-source voltage: ±16V
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| DMTH3004LK3Q-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; Idm: 105A; 107W; TO252
Mounting: SMD
Pulsed drain current: 105A
Power dissipation: 107W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: TO252
On-state resistance: 7mΩ
Gate-source voltage: ±20/±-16V
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; Idm: 105A; 107W; TO252
Mounting: SMD
Pulsed drain current: 105A
Power dissipation: 107W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: TO252
On-state resistance: 7mΩ
Gate-source voltage: ±20/±-16V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH3004LPS-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 180A; 3.2W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 3.2W
On-state resistance: 6mΩ
Polarisation: unipolar
Drain current: 18A
Drain-source voltage: 30V
Gate charge: 43.7nC
Kind of channel: enhanced
Gate-source voltage: -16...20V
Type of transistor: N-MOSFET
Pulsed drain current: 180A
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 180A; 3.2W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 3.2W
On-state resistance: 6mΩ
Polarisation: unipolar
Drain current: 18A
Drain-source voltage: 30V
Gate charge: 43.7nC
Kind of channel: enhanced
Gate-source voltage: -16...20V
Type of transistor: N-MOSFET
Pulsed drain current: 180A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH3004LPSQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 180A; 3.2W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 3.2W
On-state resistance: 6mΩ
Polarisation: unipolar
Drain current: 18A
Drain-source voltage: 30V
Gate charge: 43.7nC
Kind of channel: enhanced
Gate-source voltage: -16...20V
Type of transistor: N-MOSFET
Pulsed drain current: 180A
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 180A; 3.2W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 3.2W
On-state resistance: 6mΩ
Polarisation: unipolar
Drain current: 18A
Drain-source voltage: 30V
Gate charge: 43.7nC
Kind of channel: enhanced
Gate-source voltage: -16...20V
Type of transistor: N-MOSFET
Pulsed drain current: 180A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH31M7LPSQ-13 |
Hersteller: DIODES INCORPORATED
DMTH31M7LPSQ-13 SMD N channel transistors
DMTH31M7LPSQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH32M5LPSQ-13 |
|
Hersteller: DIODES INCORPORATED
DMTH32M5LPSQ-13 SMD N channel transistors
DMTH32M5LPSQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH4004LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMTH4004LK3Q-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 3.9W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 200A
Power dissipation: 3.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 3.9W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 200A
Power dissipation: 3.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH4004LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Pulsed drain current: 100A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 82.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Pulsed drain current: 100A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 82.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH4004LPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Pulsed drain current: 100A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 82.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Pulsed drain current: 100A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 82.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH4004SCTB-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 200A
Power dissipation: 4.7W
Case: TO263AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 68.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 200A
Power dissipation: 4.7W
Case: TO263AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 68.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
| DMTH4004SCTBQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 200A
Power dissipation: 4.7W
Case: TO263AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 68.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 200A
Power dissipation: 4.7W
Case: TO263AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 68.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
| DMTH4004SPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 26A; Idm: 350A; 3.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 26A
Pulsed drain current: 350A
Power dissipation: 3.6W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 68.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 26A; Idm: 350A; 3.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 26A
Pulsed drain current: 350A
Power dissipation: 3.6W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 68.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH4004SPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 26A; Idm: 350A; 3.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 26A
Pulsed drain current: 350A
Power dissipation: 3.6W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 68.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 26A; Idm: 350A; 3.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 26A
Pulsed drain current: 350A
Power dissipation: 3.6W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 68.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH4005SK3Q-13 |
|
Hersteller: DIODES INCORPORATED
DMTH4005SK3Q-13 SMD N channel transistors
DMTH4005SK3Q-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH4005SPS-13 |
|
Hersteller: DIODES INCORPORATED
DMTH4005SPS-13 SMD N channel transistors
DMTH4005SPS-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH4005SPSQ-13 |
|
Hersteller: DIODES INCORPORATED
DMTH4005SPSQ-13 SMD N channel transistors
DMTH4005SPSQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH4007LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMTH4007LK3Q-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13.9A; Idm: 80A; 2.6W; TO252
Mounting: SMD
Kind of package: reel; tape
Case: TO252
Power dissipation: 2.6W
Drain-source voltage: 40V
Drain current: 13.9A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 29.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13.9A; Idm: 80A; 2.6W; TO252
Mounting: SMD
Kind of package: reel; tape
Case: TO252
Power dissipation: 2.6W
Drain-source voltage: 40V
Drain current: 13.9A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 29.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH4007LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMTH4007LPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; Idm: 340A; 2.7W
Mounting: SMD
Kind of package: reel; tape
Case: PowerDI5060-8
Power dissipation: 2.7W
Drain-source voltage: 40V
Drain current: 11A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 29.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 340A
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; Idm: 340A; 2.7W
Mounting: SMD
Kind of package: reel; tape
Case: PowerDI5060-8
Power dissipation: 2.7W
Drain-source voltage: 40V
Drain current: 11A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 29.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 340A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH4007SPD-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11.9A; Idm: 90A; 2.6W
Mounting: SMD
Kind of package: reel; tape
Case: PowerDI5060-8
Power dissipation: 2.6W
Polarisation: unipolar
Drain current: 11.9A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Pulsed drain current: 90A
Gate charge: 41.9nC
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11.9A; Idm: 90A; 2.6W
Mounting: SMD
Kind of package: reel; tape
Case: PowerDI5060-8
Power dissipation: 2.6W
Polarisation: unipolar
Drain current: 11.9A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Pulsed drain current: 90A
Gate charge: 41.9nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH4007SPDQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11.9A; Idm: 90A; 2.6W
Mounting: SMD
Kind of package: reel; tape
Case: PowerDI5060-8
Power dissipation: 2.6W
Polarisation: unipolar
Drain current: 11.9A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Pulsed drain current: 90A
Gate charge: 41.9nC
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11.9A; Idm: 90A; 2.6W
Mounting: SMD
Kind of package: reel; tape
Case: PowerDI5060-8
Power dissipation: 2.6W
Polarisation: unipolar
Drain current: 11.9A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Pulsed drain current: 90A
Gate charge: 41.9nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH4007SPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13.1A; Idm: 200A; 2.8W
Mounting: SMD
Kind of package: reel; tape
Case: PowerDI5060-8
Power dissipation: 2.8W
Polarisation: unipolar
Drain current: 13.1A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Pulsed drain current: 200A
Gate charge: 41.9nC
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13.1A; Idm: 200A; 2.8W
Mounting: SMD
Kind of package: reel; tape
Case: PowerDI5060-8
Power dissipation: 2.8W
Polarisation: unipolar
Drain current: 13.1A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Pulsed drain current: 200A
Gate charge: 41.9nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH4008LFDFW-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.2A
Pulsed drain current: 80A
Power dissipation: 2.35W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.2A
Pulsed drain current: 80A
Power dissipation: 2.35W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMTH4008LFDFWQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.2A
Pulsed drain current: 80A
Power dissipation: 2.35W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.2A
Pulsed drain current: 80A
Power dissipation: 2.35W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMTH4008LFDFWQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.2A
Pulsed drain current: 80A
Power dissipation: 2.35W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.2A
Pulsed drain current: 80A
Power dissipation: 2.35W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMTH4008LPDW-13 |
Hersteller: DIODES INCORPORATED
DMTH4008LPDW-13 Multi channel transistors
DMTH4008LPDW-13 Multi channel transistors
Produkt ist nicht verfügbar
| DMTH4008LPDWQ-13 |
|
Hersteller: DIODES INCORPORATED
DMTH4008LPDWQ-13 Multi channel transistors
DMTH4008LPDWQ-13 Multi channel transistors
Produkt ist nicht verfügbar
| DMTH4008LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10.2A
Pulsed drain current: 110A
Power dissipation: 2.99W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 15.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10.2A
Pulsed drain current: 110A
Power dissipation: 2.99W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 15.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMTH4008LPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10.2A
Pulsed drain current: 110A
Power dissipation: 2.99W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 15.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10.2A
Pulsed drain current: 110A
Power dissipation: 2.99W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 15.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMTH4011SPD-13 |
|
Hersteller: DIODES INCORPORATED
DMTH4011SPD-13 SMD N channel transistors
DMTH4011SPD-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH4011SPDQ-13 |
|
Hersteller: DIODES INCORPORATED
DMTH4011SPDQ-13 SMD N channel transistors
DMTH4011SPDQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH4014LDVW-13 |
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.2A; Idm: 110A; 2.6W
Case: PowerDI3333-8
Mounting: SMD
On-state resistance: 25mΩ
Kind of package: reel; tape
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 11.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Drain-source voltage: 40V
Drain current: 7.2A
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.2A; Idm: 110A; 2.6W
Case: PowerDI3333-8
Mounting: SMD
On-state resistance: 25mΩ
Kind of package: reel; tape
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 11.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Drain-source voltage: 40V
Drain current: 7.2A
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMTH4014LDVWQ-13 |
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.2A; Idm: 110A; 2.6W
Case: PowerDI3333-8
Mounting: SMD
On-state resistance: 25mΩ
Kind of package: reel; tape
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 11.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Drain-source voltage: 40V
Drain current: 7.2A
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.2A; Idm: 110A; 2.6W
Case: PowerDI3333-8
Mounting: SMD
On-state resistance: 25mΩ
Kind of package: reel; tape
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 11.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Drain-source voltage: 40V
Drain current: 7.2A
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMTH4014LFVWQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.1A; Idm: 180A; 3.1W
Case: PowerDI3333-8
Mounting: SMD
On-state resistance: 26mΩ
Kind of package: reel; tape
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 11.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 180A
Drain-source voltage: 40V
Drain current: 8.1A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.1A; Idm: 180A; 3.1W
Case: PowerDI3333-8
Mounting: SMD
On-state resistance: 26mΩ
Kind of package: reel; tape
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 11.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 180A
Drain-source voltage: 40V
Drain current: 8.1A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMTH4014LFVWQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.1A; Idm: 180A; 3.1W
Case: PowerDI3333-8
Mounting: SMD
On-state resistance: 26mΩ
Kind of package: reel; tape
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 11.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 180A
Drain-source voltage: 40V
Drain current: 8.1A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.1A; Idm: 180A; 3.1W
Case: PowerDI3333-8
Mounting: SMD
On-state resistance: 26mΩ
Kind of package: reel; tape
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 11.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 180A
Drain-source voltage: 40V
Drain current: 8.1A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMTH4014LPD-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.5A; Idm: 174A; 2.4W
Case: PowerDI5060-8
Mounting: SMD
On-state resistance: 25mΩ
Kind of package: reel; tape
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 10.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 174A
Drain-source voltage: 40V
Drain current: 7.5A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.5A; Idm: 174A; 2.4W
Case: PowerDI5060-8
Mounting: SMD
On-state resistance: 25mΩ
Kind of package: reel; tape
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 10.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 174A
Drain-source voltage: 40V
Drain current: 7.5A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH4014LPDQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.5A; Idm: 174A; 2.4W
Case: PowerDI5060-8
Mounting: SMD
On-state resistance: 25mΩ
Kind of package: reel; tape
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 10.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 174A
Drain-source voltage: 40V
Drain current: 7.5A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.5A; Idm: 174A; 2.4W
Case: PowerDI5060-8
Mounting: SMD
On-state resistance: 25mΩ
Kind of package: reel; tape
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 10.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 174A
Drain-source voltage: 40V
Drain current: 7.5A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH41M8SPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 3.03W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.03W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 79.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: PowerDI5060-8
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 3.03W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.03W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 79.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: PowerDI5060-8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH41M8SPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 3.03W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.03W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 79.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: PowerDI5060-8
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 3.03W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.03W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 79.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: PowerDI5060-8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH43M8LFGQ-13 |
|
Hersteller: DIODES INCORPORATED
DMTH43M8LFGQ-13 SMD N channel transistors
DMTH43M8LFGQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH43M8LFGQ-7 |
|
Hersteller: DIODES INCORPORATED
DMTH43M8LFGQ-7 SMD N channel transistors
DMTH43M8LFGQ-7 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH43M8LK3-13 |
|
Hersteller: DIODES INCORPORATED
DMTH43M8LK3-13 SMD N channel transistors
DMTH43M8LK3-13 SMD N channel transistors
Produkt ist nicht verfügbar