DMTH4008LFDFW-7 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.2A
Pulsed drain current: 80A
Power dissipation: 2.35W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.2A
Pulsed drain current: 80A
Power dissipation: 2.35W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhanced
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Technische Details DMTH4008LFDFW-7 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 8.2A, Pulsed drain current: 80A, Power dissipation: 2.35W, Case: U-DFN2020-6, Gate-source voltage: ±20V, On-state resistance: 18mΩ, Mounting: SMD, Gate charge: 14.2nC, Kind of package: reel; tape, Kind of channel: enhanced.
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DMTH4008LFDFW-7 | Hersteller : Diodes Incorporated |
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DMTH4008LFDFW-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 8.2A Pulsed drain current: 80A Power dissipation: 2.35W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 14.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |