auf Bestellung 2491 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 2.87 EUR |
| 10+ | 2.59 EUR |
| 100+ | 2.08 EUR |
| 500+ | 1.71 EUR |
| 1000+ | 1.41 EUR |
| 2500+ | 1.32 EUR |
| 5000+ | 1.27 EUR |
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Technische Details DMTH41M8SPSQ-13 Diodes Incorporated
Description: MOSFET N-CH 40V 100A PWRDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V, Power Dissipation (Max): 3.03W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type K), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6968 pF @ 20 V.
Weitere Produktangebote DMTH41M8SPSQ-13 nach Preis ab 1.58 EUR bis 3.2 EUR
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DMTH41M8SPSQ-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 40V 100A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Power Dissipation (Max): 3.03W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6968 pF @ 20 V |
auf Bestellung 2208 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH41M8SPSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 3.03W Mounting: SMD Drain-source voltage: 40V Drain current: 100A On-state resistance: 1.8mΩ Type of transistor: N-MOSFET Power dissipation: 3.03W Polarisation: unipolar Kind of package: reel; tape Gate charge: 79.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Case: PowerDI5060-8 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMTH41M8SPSQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 40V 100A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Power Dissipation (Max): 3.03W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6968 pF @ 20 V |
Produkt ist nicht verfügbar |
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| DMTH41M8SPSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 3.03W Mounting: SMD Drain-source voltage: 40V Drain current: 100A On-state resistance: 1.8mΩ Type of transistor: N-MOSFET Power dissipation: 3.03W Polarisation: unipolar Kind of package: reel; tape Gate charge: 79.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Case: PowerDI5060-8 |
Produkt ist nicht verfügbar |