DMTH4014LFVWQ-13 Diodes Incorporated
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 1.08 EUR |
| 10+ | 0.86 EUR |
| 100+ | 0.66 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.45 EUR |
| 3000+ | 0.38 EUR |
| 9000+ | 0.37 EUR |
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Technische Details DMTH4014LFVWQ-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 8.1A; Idm: 180A; 3.1W, Case: PowerDI3333-8, Mounting: SMD, On-state resistance: 26mΩ, Kind of package: reel; tape, Power dissipation: 3.1W, Polarisation: unipolar, Gate charge: 11.2nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 180A, Drain-source voltage: 40V, Drain current: 8.1A, Type of transistor: N-MOSFET, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote DMTH4014LFVWQ-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMTH4014LFVWQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.1A; Idm: 180A; 3.1W Case: PowerDI3333-8 Mounting: SMD On-state resistance: 26mΩ Kind of package: reel; tape Power dissipation: 3.1W Polarisation: unipolar Gate charge: 11.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 180A Drain-source voltage: 40V Drain current: 8.1A Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4014LFVWQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.1A; Idm: 180A; 3.1W Case: PowerDI3333-8 Mounting: SMD On-state resistance: 26mΩ Kind of package: reel; tape Power dissipation: 3.1W Polarisation: unipolar Gate charge: 11.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 180A Drain-source voltage: 40V Drain current: 8.1A Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |