DMTH4004LPSQ-13 DIODES INCORPORATED
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Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Pulsed drain current: 100A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 82.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
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Technische Details DMTH4004LPSQ-13 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 21A, Pulsed drain current: 100A, Power dissipation: 2.6W, Case: PowerDI5060-8, Gate-source voltage: ±20V, On-state resistance: 4mΩ, Mounting: SMD, Gate charge: 82.2nC, Kind of package: reel; tape, Kind of channel: enhanced, Application: automotive industry, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote DMTH4004LPSQ-13
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMTH4004LPSQ-13 | Hersteller : Diodes Incorporated |
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DMTH4004LPSQ-13 | Hersteller : Diodes Incorporated |
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Produkt ist nicht verfügbar |
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DMTH4004LPSQ-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 21A Pulsed drain current: 100A Power dissipation: 2.6W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 82.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |