![DMTH10H1M7STLWQ-13 DMTH10H1M7STLWQ-13](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4167/Mfg_31~PowerDI1012-8~~8.jpg)
DMTH10H1M7STLWQ-13 Diodes Incorporated
![DMTH10H1M7STLWQ.pdf](/images/adobe-acrobat.png)
Description: MOSFET BVDSS: 61V~100V POWERDI10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9871 pF @ 50 V
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 4.46 EUR |
3000+ | 4.2 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMTH10H1M7STLWQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI10, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V, Power Dissipation (Max): 6W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: POWERDI1012-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9871 pF @ 50 V.
Weitere Produktangebote DMTH10H1M7STLWQ-13 nach Preis ab 4.51 EUR bis 8.69 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
DMTH10H1M7STLWQ-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Power Dissipation (Max): 6W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: POWERDI1012-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9871 pF @ 50 V |
auf Bestellung 43463 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
DMTH10H1M7STLWQ-13 | Hersteller : Diodes Incorporated |
![]() |
auf Bestellung 1475 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
![]() |
DMTH10H1M7STLWQ-13 | Hersteller : Diodes Inc |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
DMTH10H1M7STLWQ-13 | Hersteller : DIODES INCORPORATED |
![]() |
Produkt ist nicht verfügbar |