DMTH3002LPS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 30V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.82 EUR |
| 5000+ | 0.78 EUR |
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Technische Details DMTH3002LPS-13 Diodes Incorporated
Description: MOSFET N-CH 30V 100A PWRDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V, Power Dissipation (Max): 1.2W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: PowerDI5060-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMTH3002LPS-13 nach Preis ab 0.79 EUR bis 1.99 EUR
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DMTH3002LPS-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V |
auf Bestellung 2521 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH3002LPS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 100A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V Power Dissipation (Max): 1.2W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH3002LPS-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMTH3002LPS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.00125 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 1.2W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00125ohm |
auf Bestellung 2533 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH3002LPS-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMTH3002LPS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.00125 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 1.2W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00125ohm |
auf Bestellung 2533 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH3002LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 240A; Idm: 400A; 2.5W Mounting: SMD Case: PowerDI5060-8 Pulsed drain current: 400A Power dissipation: 2.5W Gate charge: 77nC Polarisation: unipolar Drain current: 240A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±16V Kind of package: reel; tape On-state resistance: 2.5mΩ Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH3002LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 240A; Idm: 400A; 2.5W Mounting: SMD Case: PowerDI5060-8 Pulsed drain current: 400A Power dissipation: 2.5W Gate charge: 77nC Polarisation: unipolar Drain current: 240A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±16V Kind of package: reel; tape On-state resistance: 2.5mΩ |
Produkt ist nicht verfügbar |