Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75529) > Seite 1134 nach 1259
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMPH1006UPS-13 | DIODES INCORPORATED |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -12V; -60A; Idm: -140A; 3.2W Case: PowerDI5060-8 Power dissipation: 3.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 124nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -140A Mounting: SMD Drain-source voltage: -12V Drain current: -60A On-state resistance: 3.5Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 2500 Stücke |
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| DMPH1006UPSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -60A; Idm: -140A; 3.2W Case: PowerDI5060-8 Power dissipation: 3.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 124nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -140A Mounting: SMD Drain-source voltage: -12V Drain current: -60A On-state resistance: 3.5Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 2500 Stücke |
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DMPH2040UVTQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; Idm: -40A; 1.5W; TSOT26 Application: automotive industry Mounting: SMD Drain-source voltage: -20V Drain current: -3.9A On-state resistance: 52mΩ Type of transistor: P-MOSFET Power dissipation: 1.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -40A Case: TSOT26 Anzahl je Verpackung: 1 Stücke |
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| DMPH3010LK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11A; Idm: -100A; 3.9W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -11A Pulsed drain current: -100A Power dissipation: 3.9W Case: TO252 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 139nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
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| DMPH3010LPS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 1.5W; PowerDI®5060-8 Mounting: SMD Case: PowerDI®5060-8 Kind of package: reel; tape Power dissipation: 1.5W On-state resistance: 10mΩ Polarisation: unipolar Drain current: -50A Drain-source voltage: -30V Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
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| DMPH3010LPSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11A; Idm: -100A; 2.6W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Power dissipation: 2.6W On-state resistance: 10mΩ Polarisation: unipolar Drain current: -11A Drain-source voltage: -30V Gate charge: 139nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: P-MOSFET Pulsed drain current: -100A Anzahl je Verpackung: 2500 Stücke |
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| DMPH4011SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252 Mounting: SMD Drain current: -56A Kind of channel: enhanced Drain-source voltage: -40V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252 On-state resistance: 19mΩ Pulsed drain current: -316A Power dissipation: 3.7W Gate charge: 104nC Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
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| DMPH4011SK3Q-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252 Mounting: SMD Drain current: -56A Kind of channel: enhanced Drain-source voltage: -40V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252 On-state resistance: 19mΩ Pulsed drain current: -316A Power dissipation: 3.7W Gate charge: 104nC Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
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| DMPH4013SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252 Mounting: SMD Drain current: -40A Kind of channel: enhanced Drain-source voltage: -40V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252 On-state resistance: 23mΩ Pulsed drain current: -120A Power dissipation: 3.7W Gate charge: 67nC Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
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| DMPH4013SK3Q-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252 Mounting: SMD Drain current: -40A Kind of channel: enhanced Drain-source voltage: -40V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252 On-state resistance: 23mΩ Pulsed drain current: -120A Power dissipation: 3.7W Gate charge: 67nC Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
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| DMPH4013SPSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -49A; Idm: -277A; 3.3W Mounting: SMD Drain current: -49A Kind of channel: enhanced Drain-source voltage: -40V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PowerDI5060-8 On-state resistance: 23mΩ Pulsed drain current: -277A Power dissipation: 3.3W Gate charge: 87nC Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
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| DMPH4015SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -10A Pulsed drain current: -100A Power dissipation: 3.3W Case: TO252 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
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| DMPH4015SK3Q-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -10A Pulsed drain current: -100A Power dissipation: 3.3W Case: TO252 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
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| DMPH4015SPSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -100A; 2.6W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -9A Pulsed drain current: -100A Power dissipation: 2.6W Case: PowerDI5060-8 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
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DMPH4015SSS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -8.1A Pulsed drain current: -85A Power dissipation: 1.8W Case: SO8 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
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DMPH4015SSSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -8.1A Pulsed drain current: -85A Power dissipation: 1.8W Case: SO8 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
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| DMPH4023SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -35A Pulsed drain current: -70A Power dissipation: 3.6W Case: TO252 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 18.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
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| DMPH4023SK3Q-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -35A Pulsed drain current: -70A Power dissipation: 3.6W Case: TO252 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 18.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
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| DMPH4025SFVWQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -7.3A Pulsed drain current: -80A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 38.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
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| DMPH4025SFVWQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -7.3A Pulsed drain current: -80A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 38.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
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| DMPH4029LFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W Kind of package: reel; tape Drain-source voltage: -40V Drain current: -6.7A On-state resistance: 45mΩ Type of transistor: P-MOSFET Power dissipation: 2.8W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -88A Mounting: SMD Case: PowerDI3333-8 Anzahl je Verpackung: 3000 Stücke |
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| DMPH4029LFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W Kind of package: reel; tape Drain-source voltage: -40V Drain current: -6.7A On-state resistance: 45mΩ Type of transistor: P-MOSFET Power dissipation: 2.8W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -88A Mounting: SMD Case: PowerDI3333-8 Anzahl je Verpackung: 2000 Stücke |
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| DMPH4029LFGQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W Kind of package: reel; tape Drain-source voltage: -40V Drain current: -6.7A On-state resistance: 45mΩ Type of transistor: P-MOSFET Power dissipation: 2.8W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -88A Mounting: SMD Case: PowerDI3333-8 Anzahl je Verpackung: 3000 Stücke |
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| DMPH4029LFGQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W Kind of package: reel; tape Drain-source voltage: -40V Drain current: -6.7A On-state resistance: 45mΩ Type of transistor: P-MOSFET Power dissipation: 2.8W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -88A Mounting: SMD Case: PowerDI3333-8 Anzahl je Verpackung: 2000 Stücke |
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| DMPH6023SK3-13 | DIODES INCORPORATED |
DMPH6023SK3-13 SMD P channel transistors |
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| DMPH6023SK3Q-13 | DIODES INCORPORATED |
DMPH6023SK3Q-13 SMD P channel transistors |
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| DMPH6050SFGQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4.2A; Idm: -32A; 2.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.2A Pulsed drain current: -32A Power dissipation: 2.8W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 24.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
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| DMPH6050SFGQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4.2A; Idm: -32A; 2.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.2A Pulsed drain current: -32A Power dissipation: 2.8W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 24.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
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| DMPH6050SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6A Pulsed drain current: -40A Power dissipation: 3.8W Case: TO252 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| DMPH6050SK3Q-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6A Pulsed drain current: -40A Power dissipation: 3.8W Case: TO252 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
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| DMPH6050SPD-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; Idm: -40A; 2.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.4A Pulsed drain current: -40A Power dissipation: 2.8W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 30.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
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| DMPH6050SPDQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; Idm: -40A; 2.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.4A Pulsed drain current: -40A Power dissipation: 2.8W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 30.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
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DMPH6050SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -4.7A; 1.5W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.7A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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DMPH6050SSDQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.7A; Idm: -35A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.7A Pulsed drain current: -35A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 30.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
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| DMPH6250S-13 | DIODES INCORPORATED |
DMPH6250S-13 SMD P channel transistors |
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| DMPH6250S-7 | DIODES INCORPORATED |
DMPH6250S-7 SMD P channel transistors |
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DMPH6250SQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.5A Pulsed drain current: -13A Power dissipation: 1.62W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
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DMPH6250SQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.5A Pulsed drain current: -13A Power dissipation: 1.62W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| DMS2085LSD-13 | DIODES INCORPORATED |
DMS2085LSD-13 SMD P channel transistors |
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| DMS2120LFWB-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -10A; 1.5W Mounting: SMD Case: W-DFN5020-6 Kind of package: reel; tape Drain current: -2.9A On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 1.5W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -10A Drain-source voltage: -20V Anzahl je Verpackung: 1 Stücke |
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| DMS2220LFDB-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -12A; 1.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.5A Pulsed drain current: -12A Power dissipation: 1.4W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| DMS3014SFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223 Mounting: SMD Polarisation: unipolar Power dissipation: 1.69W Kind of package: reel; tape Kind of channel: enhanced Pulsed drain current: 6A Case: SOT223 Drain-source voltage: 60V Drain current: 2A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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| DMS3014SFGQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223 Mounting: SMD Polarisation: unipolar Power dissipation: 1.69W Kind of package: reel; tape Kind of channel: enhanced Pulsed drain current: 6A Case: SOT223 Drain-source voltage: 60V Drain current: 2A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
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| DMS3014SFGQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223 Mounting: SMD Polarisation: unipolar Power dissipation: 1.69W Kind of package: reel; tape Kind of channel: enhanced Pulsed drain current: 6A Case: SOT223 Drain-source voltage: 60V Drain current: 2A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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| DMT10H009LCG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.9A; Idm: 160A; 2.1W Mounting: SMD Case: V-DFN3333-8 Type of transistor: N-MOSFET On-state resistance: 12.9mΩ Drain current: 9.9A Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20.2nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 160A Anzahl je Verpackung: 2000 Stücke |
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| DMT10H009LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 200A; 2W Mounting: SMD Case: PowerDI3333-8 Type of transistor: N-MOSFET On-state resistance: 12.5mΩ Drain current: 11A Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 41nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A Anzahl je Verpackung: 2000 Stücke |
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| DMT10H009LH3 | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 336A; 61W; TO251 Mounting: THT Case: TO251 Type of transistor: N-MOSFET On-state resistance: 13mΩ Drain current: 67A Power dissipation: 61W Polarisation: unipolar Kind of package: tube Gate charge: 20.2nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 336A Anzahl je Verpackung: 1 Stücke |
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| DMT10H009LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 73A; Idm: 360A; 3W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET On-state resistance: 13mΩ Drain current: 73A Power dissipation: 3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 360A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMT10H009LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 360A; 2.9W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 12.5mΩ Drain current: 8A Power dissipation: 2.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 40.2nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 360A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMT10H009LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 110A; 2.5W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 13.8mΩ Drain current: 10A Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 40.2nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 110A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMT10H009SK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 360A; 3.2W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET On-state resistance: 9.1mΩ Drain current: 75A Power dissipation: 3.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 34nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 360A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMT10H009SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 320A; 2.7W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 8.5mΩ Drain current: 11A Power dissipation: 2.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 30nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 320A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMT10H010LCT | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 62A; Idm: 92A; 139W; TO220AB Mounting: THT Case: TO220AB Type of transistor: N-MOSFET On-state resistance: 6.9mΩ Drain current: 62A Power dissipation: 139W Polarisation: unipolar Kind of package: tube Gate charge: 58.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 92A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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 |
DMT10H010LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 275A; 3W; DPAK Mounting: SMD Case: DPAK Type of transistor: N-MOSFET On-state resistance: 15mΩ Drain current: 55A Power dissipation: 3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 53.7nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 275A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMT10H010LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 98A; 1.2W; PowerDI®5060-8 Mounting: SMD Case: PowerDI®5060-8 Type of transistor: N-MOSFET On-state resistance: 8.3mΩ Drain current: 98A Power dissipation: 1.2W Polarisation: unipolar Kind of package: reel; tape Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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|
DMT10H010LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.2A; Idm: 75A; 1.9W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 14.5mΩ Drain current: 9.2A Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 58.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 75A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMT10H010SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.6A; Idm: 250A; 1.2W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 11.5mΩ Drain current: 8.6A Power dissipation: 1.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 250A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMT10H014LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.1A; Idm: 54A; 1.67W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 25mΩ Drain current: 7.1A Power dissipation: 1.67W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 54A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMT10H015LCG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 54A; 2.1W Mounting: SMD Case: V-DFN3333-8 Type of transistor: N-MOSFET On-state resistance: 26mΩ Drain current: 7.5A Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 54A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMT10H015LCG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 54A; 2.1W Mounting: SMD Case: V-DFN3333-8 Type of transistor: N-MOSFET On-state resistance: 26mΩ Drain current: 7.5A Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 54A Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
| DMPH1006UPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -60A; Idm: -140A; 3.2W
Case: PowerDI5060-8
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 124nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -140A
Mounting: SMD
Drain-source voltage: -12V
Drain current: -60A
On-state resistance: 3.5Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -60A; Idm: -140A; 3.2W
Case: PowerDI5060-8
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 124nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -140A
Mounting: SMD
Drain-source voltage: -12V
Drain current: -60A
On-state resistance: 3.5Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMPH1006UPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -60A; Idm: -140A; 3.2W
Case: PowerDI5060-8
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 124nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -140A
Mounting: SMD
Drain-source voltage: -12V
Drain current: -60A
On-state resistance: 3.5Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -60A; Idm: -140A; 3.2W
Case: PowerDI5060-8
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 124nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -140A
Mounting: SMD
Drain-source voltage: -12V
Drain current: -60A
On-state resistance: 3.5Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMPH2040UVTQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; Idm: -40A; 1.5W; TSOT26
Application: automotive industry
Mounting: SMD
Drain-source voltage: -20V
Drain current: -3.9A
On-state resistance: 52mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -40A
Case: TSOT26
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; Idm: -40A; 1.5W; TSOT26
Application: automotive industry
Mounting: SMD
Drain-source voltage: -20V
Drain current: -3.9A
On-state resistance: 52mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -40A
Case: TSOT26
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMPH3010LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; Idm: -100A; 3.9W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Pulsed drain current: -100A
Power dissipation: 3.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; Idm: -100A; 3.9W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Pulsed drain current: -100A
Power dissipation: 3.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMPH3010LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 1.5W; PowerDI®5060-8
Mounting: SMD
Case: PowerDI®5060-8
Kind of package: reel; tape
Power dissipation: 1.5W
On-state resistance: 10mΩ
Polarisation: unipolar
Drain current: -50A
Drain-source voltage: -30V
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 1.5W; PowerDI®5060-8
Mounting: SMD
Case: PowerDI®5060-8
Kind of package: reel; tape
Power dissipation: 1.5W
On-state resistance: 10mΩ
Polarisation: unipolar
Drain current: -50A
Drain-source voltage: -30V
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMPH3010LPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; Idm: -100A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 2.6W
On-state resistance: 10mΩ
Polarisation: unipolar
Drain current: -11A
Drain-source voltage: -30V
Gate charge: 139nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Pulsed drain current: -100A
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; Idm: -100A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 2.6W
On-state resistance: 10mΩ
Polarisation: unipolar
Drain current: -11A
Drain-source voltage: -30V
Gate charge: 139nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Pulsed drain current: -100A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMPH4011SK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Mounting: SMD
Drain current: -56A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 19mΩ
Pulsed drain current: -316A
Power dissipation: 3.7W
Gate charge: 104nC
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Mounting: SMD
Drain current: -56A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 19mΩ
Pulsed drain current: -316A
Power dissipation: 3.7W
Gate charge: 104nC
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMPH4011SK3Q-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Mounting: SMD
Drain current: -56A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 19mΩ
Pulsed drain current: -316A
Power dissipation: 3.7W
Gate charge: 104nC
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252
Mounting: SMD
Drain current: -56A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 19mΩ
Pulsed drain current: -316A
Power dissipation: 3.7W
Gate charge: 104nC
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMPH4013SK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252
Mounting: SMD
Drain current: -40A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 23mΩ
Pulsed drain current: -120A
Power dissipation: 3.7W
Gate charge: 67nC
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252
Mounting: SMD
Drain current: -40A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 23mΩ
Pulsed drain current: -120A
Power dissipation: 3.7W
Gate charge: 67nC
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMPH4013SK3Q-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252
Mounting: SMD
Drain current: -40A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 23mΩ
Pulsed drain current: -120A
Power dissipation: 3.7W
Gate charge: 67nC
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252
Mounting: SMD
Drain current: -40A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 23mΩ
Pulsed drain current: -120A
Power dissipation: 3.7W
Gate charge: 67nC
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMPH4013SPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -49A; Idm: -277A; 3.3W
Mounting: SMD
Drain current: -49A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerDI5060-8
On-state resistance: 23mΩ
Pulsed drain current: -277A
Power dissipation: 3.3W
Gate charge: 87nC
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -49A; Idm: -277A; 3.3W
Mounting: SMD
Drain current: -49A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerDI5060-8
On-state resistance: 23mΩ
Pulsed drain current: -277A
Power dissipation: 3.3W
Gate charge: 87nC
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMPH4015SK3-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10A
Pulsed drain current: -100A
Power dissipation: 3.3W
Case: TO252
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10A
Pulsed drain current: -100A
Power dissipation: 3.3W
Case: TO252
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMPH4015SK3Q-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10A
Pulsed drain current: -100A
Power dissipation: 3.3W
Case: TO252
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10A; Idm: -100A; 3.3W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10A
Pulsed drain current: -100A
Power dissipation: 3.3W
Case: TO252
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMPH4015SPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -100A; 2.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -9A
Pulsed drain current: -100A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -100A; 2.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -9A
Pulsed drain current: -100A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMPH4015SSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.1A
Pulsed drain current: -85A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.1A
Pulsed drain current: -85A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMPH4015SSSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.1A
Pulsed drain current: -85A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.1A; Idm: -85A; 1.8W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.1A
Pulsed drain current: -85A
Power dissipation: 1.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMPH4023SK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -35A
Pulsed drain current: -70A
Power dissipation: 3.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -35A
Pulsed drain current: -70A
Power dissipation: 3.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMPH4023SK3Q-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -35A
Pulsed drain current: -70A
Power dissipation: 3.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 3.6W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -35A
Pulsed drain current: -70A
Power dissipation: 3.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMPH4025SFVWQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.3A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 38.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.3A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 38.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMPH4025SFVWQ-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.3A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 38.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -7.3A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.3A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 38.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| DMPH4029LFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -6.7A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -88A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -6.7A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -88A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMPH4029LFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -6.7A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -88A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -6.7A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -88A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| DMPH4029LFGQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -6.7A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -88A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -6.7A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -88A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMPH4029LFGQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -6.7A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -88A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.7A; Idm: -88A; 2.8W
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -6.7A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -88A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| DMPH6023SK3-13 |
|
Hersteller: DIODES INCORPORATED
DMPH6023SK3-13 SMD P channel transistors
DMPH6023SK3-13 SMD P channel transistors
Produkt ist nicht verfügbar
| DMPH6023SK3Q-13 |
|
Hersteller: DIODES INCORPORATED
DMPH6023SK3Q-13 SMD P channel transistors
DMPH6023SK3Q-13 SMD P channel transistors
Produkt ist nicht verfügbar
| DMPH6050SFGQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.2A; Idm: -32A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.2A
Pulsed drain current: -32A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.2A; Idm: -32A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.2A
Pulsed drain current: -32A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMPH6050SFGQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.2A; Idm: -32A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.2A
Pulsed drain current: -32A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.2A; Idm: -32A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.2A
Pulsed drain current: -32A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| DMPH6050SK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6A
Pulsed drain current: -40A
Power dissipation: 3.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6A
Pulsed drain current: -40A
Power dissipation: 3.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMPH6050SK3Q-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6A
Pulsed drain current: -40A
Power dissipation: 3.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6A
Pulsed drain current: -40A
Power dissipation: 3.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMPH6050SPD-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; Idm: -40A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.4A
Pulsed drain current: -40A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; Idm: -40A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.4A
Pulsed drain current: -40A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMPH6050SPDQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; Idm: -40A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.4A
Pulsed drain current: -40A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; Idm: -40A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.4A
Pulsed drain current: -40A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMPH6050SSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -4.7A; 1.5W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.7A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -4.7A; 1.5W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.7A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMPH6050SSDQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.7A; Idm: -35A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.7A
Pulsed drain current: -35A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.7A; Idm: -35A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.7A
Pulsed drain current: -35A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMPH6250S-13 |
|
Hersteller: DIODES INCORPORATED
DMPH6250S-13 SMD P channel transistors
DMPH6250S-13 SMD P channel transistors
Produkt ist nicht verfügbar
| DMPH6250S-7 |
|
Hersteller: DIODES INCORPORATED
DMPH6250S-7 SMD P channel transistors
DMPH6250S-7 SMD P channel transistors
Produkt ist nicht verfügbar
| DMPH6250SQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMPH6250SQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMS2085LSD-13 |
|
Hersteller: DIODES INCORPORATED
DMS2085LSD-13 SMD P channel transistors
DMS2085LSD-13 SMD P channel transistors
Produkt ist nicht verfügbar
| DMS2120LFWB-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -10A; 1.5W
Mounting: SMD
Case: W-DFN5020-6
Kind of package: reel; tape
Drain current: -2.9A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -10A
Drain-source voltage: -20V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -10A; 1.5W
Mounting: SMD
Case: W-DFN5020-6
Kind of package: reel; tape
Drain current: -2.9A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -10A
Drain-source voltage: -20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMS2220LFDB-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -12A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Pulsed drain current: -12A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -12A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Pulsed drain current: -12A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMS3014SFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.69W
Kind of package: reel; tape
Kind of channel: enhanced
Pulsed drain current: 6A
Case: SOT223
Drain-source voltage: 60V
Drain current: 2A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.69W
Kind of package: reel; tape
Kind of channel: enhanced
Pulsed drain current: 6A
Case: SOT223
Drain-source voltage: 60V
Drain current: 2A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMS3014SFGQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.69W
Kind of package: reel; tape
Kind of channel: enhanced
Pulsed drain current: 6A
Case: SOT223
Drain-source voltage: 60V
Drain current: 2A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.69W
Kind of package: reel; tape
Kind of channel: enhanced
Pulsed drain current: 6A
Case: SOT223
Drain-source voltage: 60V
Drain current: 2A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMS3014SFGQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.69W
Kind of package: reel; tape
Kind of channel: enhanced
Pulsed drain current: 6A
Case: SOT223
Drain-source voltage: 60V
Drain current: 2A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.69W
Kind of package: reel; tape
Kind of channel: enhanced
Pulsed drain current: 6A
Case: SOT223
Drain-source voltage: 60V
Drain current: 2A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMT10H009LCG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.9A; Idm: 160A; 2.1W
Mounting: SMD
Case: V-DFN3333-8
Type of transistor: N-MOSFET
On-state resistance: 12.9mΩ
Drain current: 9.9A
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20.2nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.9A; Idm: 160A; 2.1W
Mounting: SMD
Case: V-DFN3333-8
Type of transistor: N-MOSFET
On-state resistance: 12.9mΩ
Drain current: 9.9A
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20.2nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| DMT10H009LFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 200A; 2W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 12.5mΩ
Drain current: 11A
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 200A; 2W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 12.5mΩ
Drain current: 11A
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| DMT10H009LH3 |
|
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 336A; 61W; TO251
Mounting: THT
Case: TO251
Type of transistor: N-MOSFET
On-state resistance: 13mΩ
Drain current: 67A
Power dissipation: 61W
Polarisation: unipolar
Kind of package: tube
Gate charge: 20.2nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 336A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 336A; 61W; TO251
Mounting: THT
Case: TO251
Type of transistor: N-MOSFET
On-state resistance: 13mΩ
Drain current: 67A
Power dissipation: 61W
Polarisation: unipolar
Kind of package: tube
Gate charge: 20.2nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 336A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMT10H009LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; Idm: 360A; 3W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 13mΩ
Drain current: 73A
Power dissipation: 3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; Idm: 360A; 3W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 13mΩ
Drain current: 73A
Power dissipation: 3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMT10H009LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 360A; 2.9W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 12.5mΩ
Drain current: 8A
Power dissipation: 2.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 40.2nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 360A; 2.9W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 12.5mΩ
Drain current: 8A
Power dissipation: 2.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 40.2nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMT10H009LSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 110A; 2.5W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 13.8mΩ
Drain current: 10A
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 40.2nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 110A; 2.5W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 13.8mΩ
Drain current: 10A
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 40.2nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMT10H009SK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 360A; 3.2W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 9.1mΩ
Drain current: 75A
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 34nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 360A; 3.2W; TO252
Mounting: SMD
Case: TO252
Type of transistor: N-MOSFET
On-state resistance: 9.1mΩ
Drain current: 75A
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 34nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMT10H009SPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 320A; 2.7W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 8.5mΩ
Drain current: 11A
Power dissipation: 2.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 320A
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 320A; 2.7W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 8.5mΩ
Drain current: 11A
Power dissipation: 2.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 320A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMT10H010LCT |
|
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; Idm: 92A; 139W; TO220AB
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
On-state resistance: 6.9mΩ
Drain current: 62A
Power dissipation: 139W
Polarisation: unipolar
Kind of package: tube
Gate charge: 58.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 92A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; Idm: 92A; 139W; TO220AB
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
On-state resistance: 6.9mΩ
Drain current: 62A
Power dissipation: 139W
Polarisation: unipolar
Kind of package: tube
Gate charge: 58.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 92A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMT10H010LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 275A; 3W; DPAK
Mounting: SMD
Case: DPAK
Type of transistor: N-MOSFET
On-state resistance: 15mΩ
Drain current: 55A
Power dissipation: 3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 53.7nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 275A
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 275A; 3W; DPAK
Mounting: SMD
Case: DPAK
Type of transistor: N-MOSFET
On-state resistance: 15mΩ
Drain current: 55A
Power dissipation: 3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 53.7nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 275A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMT10H010LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 98A; 1.2W; PowerDI®5060-8
Mounting: SMD
Case: PowerDI®5060-8
Type of transistor: N-MOSFET
On-state resistance: 8.3mΩ
Drain current: 98A
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 98A; 1.2W; PowerDI®5060-8
Mounting: SMD
Case: PowerDI®5060-8
Type of transistor: N-MOSFET
On-state resistance: 8.3mΩ
Drain current: 98A
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMT10H010LSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.2A; Idm: 75A; 1.9W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 14.5mΩ
Drain current: 9.2A
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 58.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.2A; Idm: 75A; 1.9W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 14.5mΩ
Drain current: 9.2A
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 58.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMT10H010SPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.6A; Idm: 250A; 1.2W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 11.5mΩ
Drain current: 8.6A
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 56.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 250A
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.6A; Idm: 250A; 1.2W
Mounting: SMD
Case: PowerDI5060-8
Type of transistor: N-MOSFET
On-state resistance: 11.5mΩ
Drain current: 8.6A
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 56.4nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 250A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMT10H014LSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.1A; Idm: 54A; 1.67W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Drain current: 7.1A
Power dissipation: 1.67W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.1A; Idm: 54A; 1.67W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Drain current: 7.1A
Power dissipation: 1.67W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMT10H015LCG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 54A; 2.1W
Mounting: SMD
Case: V-DFN3333-8
Type of transistor: N-MOSFET
On-state resistance: 26mΩ
Drain current: 7.5A
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 54A; 2.1W
Mounting: SMD
Case: V-DFN3333-8
Type of transistor: N-MOSFET
On-state resistance: 26mΩ
Drain current: 7.5A
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMT10H015LCG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 54A; 2.1W
Mounting: SMD
Case: V-DFN3333-8
Type of transistor: N-MOSFET
On-state resistance: 26mΩ
Drain current: 7.5A
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 54A; 2.1W
Mounting: SMD
Case: V-DFN3333-8
Type of transistor: N-MOSFET
On-state resistance: 26mΩ
Drain current: 7.5A
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar