DMPH1006UPSQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 12V 80A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 6334 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.75 EUR |
| 5000+ | 0.72 EUR |
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Technische Details DMPH1006UPSQ-13 Diodes Incorporated
Description: MOSFET P-CH 12V 80A PWRDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V, Power Dissipation (Max): 3.2W, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 6334 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote DMPH1006UPSQ-13 nach Preis ab 0.78 EUR bis 1.83 EUR
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DMPH1006UPSQ-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V |
auf Bestellung 1895 Stücke: Lieferzeit 10-14 Tag (e) |
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DMPH1006UPSQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 12V 80A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V Power Dissipation (Max): 3.2W Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 6334 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 7335 Stücke: Lieferzeit 10-14 Tag (e) |
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DMPH1006UPSQ-13 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 12V 80A Automotive 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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| DMPH1006UPSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -60A; Idm: -140A; 3.2W Case: PowerDI5060-8 Power dissipation: 3.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 124nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -140A Mounting: SMD Drain-source voltage: -12V Drain current: -60A On-state resistance: 3.5Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMPH1006UPSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -60A; Idm: -140A; 3.2W Case: PowerDI5060-8 Power dissipation: 3.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 124nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -140A Mounting: SMD Drain-source voltage: -12V Drain current: -60A On-state resistance: 3.5Ω Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |