Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75528) > Seite 1129 nach 1259
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| DMP2010UFV-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -40A Pulsed drain current: -80A Power dissipation: 2W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| DMP2012SN-7 | DIODES INCORPORATED |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -900mA; Idm: -2.8A; 500mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -900mA Pulsed drain current: -2.8A Power dissipation: 0.5W Case: SC59 Gate-source voltage: ±12V On-state resistance: 0.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| DMP2018LFK-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10.3A; Idm: -90A; 1.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -10.3A Pulsed drain current: -90A Power dissipation: 1.3W Case: U-DFN2523-6 Gate-source voltage: ±12V On-state resistance: 25mΩ Mounting: SMD Gate charge: 113nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
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| DMP2021UFDE-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.2W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -8.9A On-state resistance: 80mΩ Type of transistor: P-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -60A Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2021UFDE-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.2W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -8.9A On-state resistance: 80mΩ Type of transistor: P-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -60A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2021UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -8.9A On-state resistance: 80mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -60A Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2021UFDF-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; Idm: -60A; 0.47W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -7.2A On-state resistance: 80mΩ Type of transistor: P-MOSFET Power dissipation: 0.47W Polarisation: unipolar Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -60A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2021UTS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -55A; 1.3W; TSSOP8 Drain-source voltage: -20V Drain current: -5.9A On-state resistance: 40mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -55A Mounting: SMD Case: TSSOP8 Anzahl je Verpackung: 2500 Stücke |
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DMP2022LSS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 13mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1261 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2022LSSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.4A; Idm: -35A; 1.6W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -7.4A Pulsed drain current: -35A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±12V On-state resistance: 22mΩ Mounting: SMD Gate charge: 60.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMP2023UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -7.6A Pulsed drain current: -40A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2023UFDF-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 0.73W; U-DFN2020-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.9A Power dissipation: 0.73W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
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DMP2033UVT-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26 Type of transistor: P-MOSFET Mounting: SMD Case: TSOT26 On-state resistance: 0.2Ω Kind of package: reel; tape Power dissipation: 1.7W Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.4A Gate charge: 10.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -10A Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2033UVT-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26 Type of transistor: P-MOSFET Mounting: SMD Case: TSOT26 On-state resistance: 0.2Ω Kind of package: reel; tape Power dissipation: 1.7W Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.4A Gate charge: 10.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -10A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2035U-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.9A Power dissipation: 0.81W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 62mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
auf Bestellung 4989 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP2035UFCL-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W Case: U-DFN1616-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -5.3A On-state resistance: 45mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2035UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6.5A On-state resistance: 0.12Ω Type of transistor: P-MOSFET Power dissipation: 1.31W Polarisation: unipolar Gate charge: 20.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2035UFDF-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6.5A On-state resistance: 0.12Ω Type of transistor: P-MOSFET Power dissipation: 1.31W Polarisation: unipolar Gate charge: 20.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2035UQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -24A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 62mΩ Mounting: SMD Gate charge: 15.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| DMP2035UTS-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; 3.96A; Idm: 22A; 0.89W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: 3.96A Pulsed drain current: 22A Power dissipation: 0.89W Case: TSSOP8 Gate-source voltage: ±8V On-state resistance: 62mΩ Mounting: SMD Gate charge: 15.4nC Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
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DMP2035UVT-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Pulsed drain current: -24A Power dissipation: 2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2035UVT-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.8A Power dissipation: 1.2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5084 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2035UVTQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Pulsed drain current: -24A Power dissipation: 2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2035UVTQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Pulsed drain current: -24A Power dissipation: 2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2036UVT-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26 Mounting: SMD Kind of package: reel; tape Gate charge: 20.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A Case: TSOT26 Drain-source voltage: -20V Drain current: -5A On-state resistance: 58mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2036UVT-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26 Mounting: SMD Kind of package: reel; tape Gate charge: 20.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A Case: TSOT26 Drain-source voltage: -20V Drain current: -5A On-state resistance: 58mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Anzahl je Verpackung: 5 Stücke |
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DMP2037U-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; Idm: -38A; 1.6W; SOT23 Mounting: SMD Pulsed drain current: -38A Power dissipation: 1.6W Gate charge: 14.5nC Polarisation: unipolar Drain current: -4.8A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape Case: SOT23 On-state resistance: 43mΩ Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| DMP2039UFDE-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -25V; -5.4A; 0.8W; U-DFN2020-6 Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -25V Drain current: -5.4A On-state resistance: 40mΩ Type of transistor: P-MOSFET Power dissipation: 0.8W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2039UFDE4-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -25V; -7.3A; Idm: -60A; 1.5W Case: X2-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -25V Drain current: -7.3A On-state resistance: 70mΩ Type of transistor: P-MOSFET Power dissipation: 1.5W Polarisation: unipolar Gate charge: 28.2nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -60A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2040UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W Mounting: SMD Case: U-DFN2020-6 Kind of package: reel; tape Power dissipation: 1.8W Drain current: -4.9A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V On-state resistance: 53mΩ Pulsed drain current: -35A Gate charge: 19nC Polarisation: unipolar Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2040UFDF-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 0.8W Mounting: SMD Case: U-DFN2020-6 Kind of package: reel; tape Power dissipation: 0.8W Drain current: -4.9A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V On-state resistance: 53mΩ Pulsed drain current: -35A Gate charge: 19nC Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
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DMP2040USD-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -30A; 1.6W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5A Pulsed drain current: -30A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±12V On-state resistance: 52mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| DMP2040USS-13 | DIODES INCORPORATED |
DMP2040USS-13 SMD P channel transistors |
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| DMP2040UVT-13 | DIODES INCORPORATED |
DMP2040UVT-13 SMD P channel transistors |
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| DMP2040UVT-7 | DIODES INCORPORATED | DMP2040UVT-7 SMD P channel transistors |
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| DMP2042UCB4-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -16A; 1.4W Mounting: SMD Case: U-WLB1010-4 Kind of package: reel; tape Gate charge: 2.5nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -16A Drain-source voltage: -20V Drain current: -3.7A On-state resistance: 65mΩ Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2043UCA3-7 | DIODES INCORPORATED | DMP2043UCA3-7 SMD P channel transistors |
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DMP2045U-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Power dissipation: 1.2W Gate charge: 6.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -25A Case: SOT23 Drain-source voltage: -20V Drain current: -3.5A On-state resistance: 90mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2045U-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2631 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP2045UFY4-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -25A; 1.49W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Power dissipation: 1.49W Gate charge: 6.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -25A Case: X2-DFN2015-3 Drain-source voltage: -20V Drain current: -3.8A On-state resistance: 0.16Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
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DMP2045UQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Power dissipation: 1.2W Gate charge: 6.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -25A Case: SOT23 Drain-source voltage: -20V Drain current: -3.5A On-state resistance: 90mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 5 Stücke |
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| DMP2047UCB4-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.2A; Idm: -16A; 1.66W Mounting: SMD Case: U-WLB1010-4 Kind of package: reel; tape Gate charge: 2.3nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -16A Drain-source voltage: -20V Drain current: -3.2A On-state resistance: 60mΩ Type of transistor: P-MOSFET Power dissipation: 1.66W Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2065UFDB-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -25A; 1.54W Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.6A On-state resistance: 0.2Ω Type of transistor: P-MOSFET Power dissipation: 1.54W Kind of package: reel; tape Gate charge: 9.1nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -25A Mounting: SMD Case: U-DFN2020-6 Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2065UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.2A; 0.74W; U-DFN2020-6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.2A Power dissipation: 0.74W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2065UQ-13 | DIODES INCORPORATED | DMP2065UQ-13 SMD P channel transistors |
Produkt ist nicht verfügbar |
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DMP2066LDMQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SOT26 Mounting: SMD Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Case: SOT26 Gate charge: 10.1nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -18A Drain-source voltage: -20V Drain current: -3.7A On-state resistance: 70mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2066LSN-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SC59 Mounting: SMD Case: SC59 Pulsed drain current: -18A Power dissipation: 1.25W Gate charge: 10.1nC Polarisation: unipolar Drain current: -3.7A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Kind of package: reel; tape On-state resistance: 70mΩ Gate-source voltage: ±12V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2066UFDE-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -25A; 2.03W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -25A Power dissipation: 2.03W Gate charge: 14.4nC Polarisation: unipolar Drain current: -5.9A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Kind of package: reel; tape On-state resistance: 75mΩ Gate-source voltage: ±12V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2069UFY4-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW Case: X2-DFN2015-3 Mounting: SMD On-state resistance: 90mΩ Kind of package: reel; tape Power dissipation: 0.53W Polarisation: unipolar Gate charge: 9.1nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -12A Drain-source voltage: -20V Drain current: -2.2A Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2069UFY4Q-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW Case: X2-DFN2015-3 Mounting: SMD On-state resistance: 90mΩ Kind of package: reel; tape Power dissipation: 0.53W Polarisation: unipolar Gate charge: 9.1nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -12A Drain-source voltage: -20V Drain current: -2.2A Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2070U-7 | DIODES INCORPORATED |
DMP2070U-7 SMD P channel transistors |
Produkt ist nicht verfügbar |
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| DMP2070UQ-7 | DIODES INCORPORATED |
DMP2070UQ-7 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMP2075UFDB-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Pulsed drain current: -25A Power dissipation: 1.4W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 137mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2075UFDB-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Pulsed drain current: -25A Power dissipation: 1.4W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 137mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2078LCA3-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W Kind of package: reel; tape Drain-source voltage: -20V Drain current: -2.7A On-state resistance: 0.6Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -13A Mounting: SMD Case: X4-DSN1006-3 Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2100UFU-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6 Polarisation: unipolar Mounting: SMD Drain-source voltage: -20V Drain current: -4.1A On-state resistance: 75mΩ Type of transistor: P-MOSFET x2 Power dissipation: 0.9W Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V Case: U-DFN2030-6 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2520 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2100UQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; 0.8W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.4A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3030 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2104LP-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; 0.5W; DFN1411-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.2A Power dissipation: 0.5W Case: DFN1411-3 Gate-source voltage: ±12V On-state resistance: 0.24Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1459 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP2104V-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; Idm: -4A; 0.85W; SOT563 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -4A Power dissipation: 0.85W Case: SOT563 Gate-source voltage: ±12V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP210DUFB4-7B | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -160mA; Idm: -0.6A; 350mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -160mA Pulsed drain current: -0.6A Power dissipation: 0.35W Case: X2-DFN1006-3 Gate-source voltage: ±10V On-state resistance: 20Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
| DMP2010UFV-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -40A
Pulsed drain current: -80A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -40A
Pulsed drain current: -80A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2012SN-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -900mA; Idm: -2.8A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -900mA
Pulsed drain current: -2.8A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -900mA; Idm: -2.8A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -900mA
Pulsed drain current: -2.8A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2018LFK-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10.3A; Idm: -90A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -10.3A
Pulsed drain current: -90A
Power dissipation: 1.3W
Case: U-DFN2523-6
Gate-source voltage: ±12V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10.3A; Idm: -90A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -10.3A
Pulsed drain current: -90A
Power dissipation: 1.3W
Case: U-DFN2523-6
Gate-source voltage: ±12V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP2021UFDE-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -8.9A
On-state resistance: 80mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 59nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -60A
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -8.9A
On-state resistance: 80mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 59nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -60A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP2021UFDE-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -8.9A
On-state resistance: 80mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 59nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -60A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -8.9A
On-state resistance: 80mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 59nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -60A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2021UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -8.9A
On-state resistance: 80mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 59nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -60A
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -8.9A
On-state resistance: 80mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 59nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -60A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP2021UFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; Idm: -60A; 0.47W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -7.2A
On-state resistance: 80mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.47W
Polarisation: unipolar
Gate charge: 59nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -60A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; Idm: -60A; 0.47W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -7.2A
On-state resistance: 80mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.47W
Polarisation: unipolar
Gate charge: 59nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -60A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2021UTS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -55A; 1.3W; TSSOP8
Drain-source voltage: -20V
Drain current: -5.9A
On-state resistance: 40mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 59nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -55A
Mounting: SMD
Case: TSSOP8
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -55A; 1.3W; TSSOP8
Drain-source voltage: -20V
Drain current: -5.9A
On-state resistance: 40mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 59nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -55A
Mounting: SMD
Case: TSSOP8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMP2022LSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1261 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 145+ | 0.5 EUR |
| 161+ | 0.45 EUR |
| 201+ | 0.36 EUR |
| 212+ | 0.34 EUR |
| 3000+ | 0.33 EUR |
| DMP2022LSSQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.4A; Idm: -35A; 1.6W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.4A
Pulsed drain current: -35A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 60.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.4A; Idm: -35A; 1.6W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.4A
Pulsed drain current: -35A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 60.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMP2023UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.6A
Pulsed drain current: -40A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.6A
Pulsed drain current: -40A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP2023UFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 0.73W; U-DFN2020-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.9A
Power dissipation: 0.73W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 0.73W; U-DFN2020-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.9A
Power dissipation: 0.73W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP2033UVT-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
On-state resistance: 0.2Ω
Kind of package: reel; tape
Power dissipation: 1.7W
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.4A
Gate charge: 10.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -10A
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
On-state resistance: 0.2Ω
Kind of package: reel; tape
Power dissipation: 1.7W
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.4A
Gate charge: 10.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -10A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP2033UVT-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
On-state resistance: 0.2Ω
Kind of package: reel; tape
Power dissipation: 1.7W
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.4A
Gate charge: 10.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -10A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
On-state resistance: 0.2Ω
Kind of package: reel; tape
Power dissipation: 1.7W
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.4A
Gate charge: 10.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -10A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2035U-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Power dissipation: 0.81W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 62mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Power dissipation: 0.81W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 62mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4989 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 295+ | 0.25 EUR |
| 575+ | 0.12 EUR |
| 660+ | 0.11 EUR |
| 760+ | 0.094 EUR |
| 805+ | 0.089 EUR |
| DMP2035UFCL-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W
Case: U-DFN1616-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -5.3A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W
Case: U-DFN1616-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -5.3A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP2035UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.31W
Polarisation: unipolar
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.31W
Polarisation: unipolar
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP2035UFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.31W
Polarisation: unipolar
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.31W
Polarisation: unipolar
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2035UQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -24A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -24A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2035UTS-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; 3.96A; Idm: 22A; 0.89W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: 3.96A
Pulsed drain current: 22A
Power dissipation: 0.89W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; 3.96A; Idm: 22A; 0.89W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: 3.96A
Pulsed drain current: 22A
Power dissipation: 0.89W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2035UVT-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP2035UVT-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.8A
Power dissipation: 1.2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.8A
Power dissipation: 1.2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5084 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 114+ | 0.63 EUR |
| 167+ | 0.43 EUR |
| 227+ | 0.32 EUR |
| 313+ | 0.23 EUR |
| 461+ | 0.16 EUR |
| 487+ | 0.15 EUR |
| DMP2035UVTQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP2035UVTQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2036UVT-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Kind of package: reel; tape
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Case: TSOT26
Drain-source voltage: -20V
Drain current: -5A
On-state resistance: 58mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Kind of package: reel; tape
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Case: TSOT26
Drain-source voltage: -20V
Drain current: -5A
On-state resistance: 58mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP2036UVT-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Kind of package: reel; tape
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Case: TSOT26
Drain-source voltage: -20V
Drain current: -5A
On-state resistance: 58mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Kind of package: reel; tape
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Case: TSOT26
Drain-source voltage: -20V
Drain current: -5A
On-state resistance: 58mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| DMP2037U-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; Idm: -38A; 1.6W; SOT23
Mounting: SMD
Pulsed drain current: -38A
Power dissipation: 1.6W
Gate charge: 14.5nC
Polarisation: unipolar
Drain current: -4.8A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 43mΩ
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; Idm: -38A; 1.6W; SOT23
Mounting: SMD
Pulsed drain current: -38A
Power dissipation: 1.6W
Gate charge: 14.5nC
Polarisation: unipolar
Drain current: -4.8A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 43mΩ
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| DMP2039UFDE-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -5.4A; 0.8W; U-DFN2020-6
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -25V
Drain current: -5.4A
On-state resistance: 40mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -5.4A; 0.8W; U-DFN2020-6
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -25V
Drain current: -5.4A
On-state resistance: 40mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2039UFDE4-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -7.3A; Idm: -60A; 1.5W
Case: X2-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -25V
Drain current: -7.3A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Gate charge: 28.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -60A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -7.3A; Idm: -60A; 1.5W
Case: X2-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -25V
Drain current: -7.3A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Gate charge: 28.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -60A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP2040UFDF-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Power dissipation: 1.8W
Drain current: -4.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Pulsed drain current: -35A
Gate charge: 19nC
Polarisation: unipolar
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 1.8W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Power dissipation: 1.8W
Drain current: -4.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Pulsed drain current: -35A
Gate charge: 19nC
Polarisation: unipolar
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP2040UFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 0.8W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Power dissipation: 0.8W
Drain current: -4.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Pulsed drain current: -35A
Gate charge: 19nC
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.9A; Idm: -35A; 0.8W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Power dissipation: 0.8W
Drain current: -4.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Pulsed drain current: -35A
Gate charge: 19nC
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2040USD-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -30A; 1.6W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Pulsed drain current: -30A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -30A; 1.6W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Pulsed drain current: -30A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2040USS-13 |
|
Hersteller: DIODES INCORPORATED
DMP2040USS-13 SMD P channel transistors
DMP2040USS-13 SMD P channel transistors
Produkt ist nicht verfügbar
| DMP2040UVT-13 |
|
Hersteller: DIODES INCORPORATED
DMP2040UVT-13 SMD P channel transistors
DMP2040UVT-13 SMD P channel transistors
Produkt ist nicht verfügbar
| DMP2040UVT-7 |
Hersteller: DIODES INCORPORATED
DMP2040UVT-7 SMD P channel transistors
DMP2040UVT-7 SMD P channel transistors
Produkt ist nicht verfügbar
| DMP2042UCB4-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -16A; 1.4W
Mounting: SMD
Case: U-WLB1010-4
Kind of package: reel; tape
Gate charge: 2.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -16A
Drain-source voltage: -20V
Drain current: -3.7A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -16A; 1.4W
Mounting: SMD
Case: U-WLB1010-4
Kind of package: reel; tape
Gate charge: 2.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -16A
Drain-source voltage: -20V
Drain current: -3.7A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP2043UCA3-7 |
Hersteller: DIODES INCORPORATED
DMP2043UCA3-7 SMD P channel transistors
DMP2043UCA3-7 SMD P channel transistors
Produkt ist nicht verfügbar
| DMP2045U-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 1.2W
Gate charge: 6.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -25A
Case: SOT23
Drain-source voltage: -20V
Drain current: -3.5A
On-state resistance: 90mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 1.2W
Gate charge: 6.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -25A
Case: SOT23
Drain-source voltage: -20V
Drain current: -3.5A
On-state resistance: 90mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP2045U-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2631 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 157+ | 0.46 EUR |
| 228+ | 0.31 EUR |
| 336+ | 0.21 EUR |
| 397+ | 0.18 EUR |
| 834+ | 0.086 EUR |
| 893+ | 0.08 EUR |
| DMP2045UFY4-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -25A; 1.49W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 1.49W
Gate charge: 6.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -25A
Case: X2-DFN2015-3
Drain-source voltage: -20V
Drain current: -3.8A
On-state resistance: 0.16Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -25A; 1.49W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 1.49W
Gate charge: 6.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -25A
Case: X2-DFN2015-3
Drain-source voltage: -20V
Drain current: -3.8A
On-state resistance: 0.16Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2045UQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 1.2W
Gate charge: 6.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -25A
Case: SOT23
Drain-source voltage: -20V
Drain current: -3.5A
On-state resistance: 90mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 1.2W
Gate charge: 6.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -25A
Case: SOT23
Drain-source voltage: -20V
Drain current: -3.5A
On-state resistance: 90mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| DMP2047UCB4-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.2A; Idm: -16A; 1.66W
Mounting: SMD
Case: U-WLB1010-4
Kind of package: reel; tape
Gate charge: 2.3nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -16A
Drain-source voltage: -20V
Drain current: -3.2A
On-state resistance: 60mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.66W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.2A; Idm: -16A; 1.66W
Mounting: SMD
Case: U-WLB1010-4
Kind of package: reel; tape
Gate charge: 2.3nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -16A
Drain-source voltage: -20V
Drain current: -3.2A
On-state resistance: 60mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.66W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP2065UFDB-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -25A; 1.54W
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.54W
Kind of package: reel; tape
Gate charge: 9.1nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -25A
Mounting: SMD
Case: U-DFN2020-6
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -25A; 1.54W
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.54W
Kind of package: reel; tape
Gate charge: 9.1nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -25A
Mounting: SMD
Case: U-DFN2020-6
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP2065UFDB-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.2A; 0.74W; U-DFN2020-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.2A
Power dissipation: 0.74W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.2A; 0.74W; U-DFN2020-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.2A
Power dissipation: 0.74W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2065UQ-13 |
Hersteller: DIODES INCORPORATED
DMP2065UQ-13 SMD P channel transistors
DMP2065UQ-13 SMD P channel transistors
Produkt ist nicht verfügbar
| DMP2066LDMQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SOT26
Mounting: SMD
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Case: SOT26
Gate charge: 10.1nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -18A
Drain-source voltage: -20V
Drain current: -3.7A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SOT26
Mounting: SMD
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Case: SOT26
Gate charge: 10.1nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -18A
Drain-source voltage: -20V
Drain current: -3.7A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2066LSN-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SC59
Mounting: SMD
Case: SC59
Pulsed drain current: -18A
Power dissipation: 1.25W
Gate charge: 10.1nC
Polarisation: unipolar
Drain current: -3.7A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Kind of package: reel; tape
On-state resistance: 70mΩ
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SC59
Mounting: SMD
Case: SC59
Pulsed drain current: -18A
Power dissipation: 1.25W
Gate charge: 10.1nC
Polarisation: unipolar
Drain current: -3.7A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Kind of package: reel; tape
On-state resistance: 70mΩ
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2066UFDE-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -25A; 2.03W
Mounting: SMD
Case: U-DFN2020-6
Pulsed drain current: -25A
Power dissipation: 2.03W
Gate charge: 14.4nC
Polarisation: unipolar
Drain current: -5.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Kind of package: reel; tape
On-state resistance: 75mΩ
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -25A; 2.03W
Mounting: SMD
Case: U-DFN2020-6
Pulsed drain current: -25A
Power dissipation: 2.03W
Gate charge: 14.4nC
Polarisation: unipolar
Drain current: -5.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Kind of package: reel; tape
On-state resistance: 75mΩ
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2069UFY4-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW
Case: X2-DFN2015-3
Mounting: SMD
On-state resistance: 90mΩ
Kind of package: reel; tape
Power dissipation: 0.53W
Polarisation: unipolar
Gate charge: 9.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -12A
Drain-source voltage: -20V
Drain current: -2.2A
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW
Case: X2-DFN2015-3
Mounting: SMD
On-state resistance: 90mΩ
Kind of package: reel; tape
Power dissipation: 0.53W
Polarisation: unipolar
Gate charge: 9.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -12A
Drain-source voltage: -20V
Drain current: -2.2A
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2069UFY4Q-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW
Case: X2-DFN2015-3
Mounting: SMD
On-state resistance: 90mΩ
Kind of package: reel; tape
Power dissipation: 0.53W
Polarisation: unipolar
Gate charge: 9.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -12A
Drain-source voltage: -20V
Drain current: -2.2A
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW
Case: X2-DFN2015-3
Mounting: SMD
On-state resistance: 90mΩ
Kind of package: reel; tape
Power dissipation: 0.53W
Polarisation: unipolar
Gate charge: 9.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -12A
Drain-source voltage: -20V
Drain current: -2.2A
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2070U-7 |
|
Hersteller: DIODES INCORPORATED
DMP2070U-7 SMD P channel transistors
DMP2070U-7 SMD P channel transistors
Produkt ist nicht verfügbar
| DMP2070UQ-7 |
|
Hersteller: DIODES INCORPORATED
DMP2070UQ-7 SMD N channel transistors
DMP2070UQ-7 SMD N channel transistors
Produkt ist nicht verfügbar
| DMP2075UFDB-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -25A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -25A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP2075UFDB-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -25A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -25A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -25A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2078LCA3-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -2.7A
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -13A
Mounting: SMD
Case: X4-DSN1006-3
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -2.7A
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -13A
Mounting: SMD
Case: X4-DSN1006-3
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP2100UFU-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -20V
Drain current: -4.1A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 0.9W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Case: U-DFN2030-6
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -20V
Drain current: -4.1A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 0.9W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Case: U-DFN2030-6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2520 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 195+ | 0.37 EUR |
| 266+ | 0.27 EUR |
| 348+ | 0.21 EUR |
| 368+ | 0.19 EUR |
| DMP2100UQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; 0.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.4A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; 0.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.4A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3030 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 343+ | 0.21 EUR |
| 550+ | 0.13 EUR |
| 618+ | 0.12 EUR |
| 725+ | 0.099 EUR |
| 770+ | 0.093 EUR |
| DMP2104LP-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; 0.5W; DFN1411-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.2A
Power dissipation: 0.5W
Case: DFN1411-3
Gate-source voltage: ±12V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; 0.5W; DFN1411-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.2A
Power dissipation: 0.5W
Case: DFN1411-3
Gate-source voltage: ±12V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1459 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 177+ | 0.4 EUR |
| 281+ | 0.25 EUR |
| 394+ | 0.18 EUR |
| 417+ | 0.17 EUR |
| DMP2104V-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; Idm: -4A; 0.85W; SOT563
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -4A
Power dissipation: 0.85W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; Idm: -4A; 0.85W; SOT563
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -4A
Power dissipation: 0.85W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP210DUFB4-7B |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -160mA; Idm: -0.6A; 350mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -160mA
Pulsed drain current: -0.6A
Power dissipation: 0.35W
Case: X2-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -160mA; Idm: -0.6A; 350mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -160mA
Pulsed drain current: -0.6A
Power dissipation: 0.35W
Case: X2-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar