Technische Details DMP2018LFK-13 Diodes Zetex
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -10.3A; Idm: -90A; 1.3W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -10.3A, Pulsed drain current: -90A, Power dissipation: 1.3W, Case: U-DFN2523-6, Gate-source voltage: ±12V, On-state resistance: 25mΩ, Mounting: SMD, Gate charge: 113nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 10000 Stücke.
Weitere Produktangebote DMP2018LFK-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMP2018LFK-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10.3A; Idm: -90A; 1.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -10.3A Pulsed drain current: -90A Power dissipation: 1.3W Case: U-DFN2523-6 Gate-source voltage: ±12V On-state resistance: 25mΩ Mounting: SMD Gate charge: 113nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
||
| DMP2018LFK-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10.3A; Idm: -90A; 1.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -10.3A Pulsed drain current: -90A Power dissipation: 1.3W Case: U-DFN2523-6 Gate-source voltage: ±12V On-state resistance: 25mΩ Mounting: SMD Gate charge: 113nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |