Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75528) > Seite 1128 nach 1259
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DMNH6042SPDQ-13 | DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| DMNH6042SPS-13 | DIODES INCORPORATED |
DMNH6042SPS-13 SMD N channel transistors |
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| DMNH6042SPSQ-13 | DIODES INCORPORATED |
DMNH6042SPSQ-13 SMD N channel transistors |
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| DMNH6042SSD-13 | DIODES INCORPORATED | DMNH6042SSD-13 Multi channel transistors |
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| DMNH6042SSDQ-13 | DIODES INCORPORATED |
DMNH6042SSDQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMNH6065SPDW-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 108A; 2.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 108A Power dissipation: 2.4W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 79mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMNH6069SFVW-13 | DIODES INCORPORATED | DMNH6069SFVW-13 SMD N channel transistors |
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| DMNH6069SFVW-7 | DIODES INCORPORATED | DMNH6069SFVW-7 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMP1005UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W Polarisation: unipolar Mounting: SMD Drain-source voltage: -12V Drain current: -10.3A On-state resistance: 18.5mΩ Type of transistor: P-MOSFET Power dissipation: 2.1W Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -70A Case: U-DFN2020-6 Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMP1005UFDF-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W Polarisation: unipolar Mounting: SMD Drain-source voltage: -12V Drain current: -10.3A On-state resistance: 18.5mΩ Type of transistor: P-MOSFET Power dissipation: 2.1W Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -70A Case: U-DFN2020-6 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP1007UCB9-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -7.8A; Idm: -80A; 1.53W Mounting: SMD Case: U-WLB1515-9 Kind of package: reel; tape Gate charge: 8.2nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -80A Drain-source voltage: -8V Drain current: -7.8A On-state resistance: 9.1mΩ Type of transistor: P-MOSFET Power dissipation: 1.53W Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP1009UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W Polarisation: unipolar Mounting: SMD Drain-source voltage: -12V Drain current: -12A On-state resistance: 30mΩ Type of transistor: P-MOSFET Power dissipation: 2W Kind of package: reel; tape Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -70A Case: U-DFN2020-6 Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMP1009UFDF-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W Polarisation: unipolar Mounting: SMD Drain-source voltage: -12V Drain current: -12A On-state resistance: 30mΩ Type of transistor: P-MOSFET Power dissipation: 2W Kind of package: reel; tape Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -70A Case: U-DFN2020-6 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP1009UFDFQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W Polarisation: unipolar Mounting: SMD Drain-source voltage: -12V Drain current: -12A On-state resistance: 30mΩ Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 2W Kind of package: reel; tape Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -70A Case: U-DFN2020-6 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP1011LFV-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W Mounting: SMD Power dissipation: 2.16W Polarisation: unipolar Kind of package: reel; tape Gate charge: 9.5nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -70A Case: PowerDI3333-8 Drain-source voltage: -12V Drain current: -10A On-state resistance: 18.6mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP1011LFV-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W Mounting: SMD Power dissipation: 2.16W Polarisation: unipolar Kind of package: reel; tape Gate charge: 9.5nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -70A Case: PowerDI3333-8 Drain-source voltage: -12V Drain current: -10A On-state resistance: 18.6mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| DMP1011UCB9-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W Mounting: SMD Case: U-WLB1515-9 Kind of package: reel; tape Gate charge: 10.5nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -50A Drain-source voltage: -8V Drain current: -6A On-state resistance: 14mΩ Type of transistor: P-MOSFET Power dissipation: 1.57W Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP1012UCB9-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W Mounting: SMD Case: U-WLB1515-9 Kind of package: reel; tape Gate charge: 10.5nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -50A Drain-source voltage: -8V Drain current: -6A On-state resistance: 14mΩ Type of transistor: P-MOSFET Power dissipation: 1.57W Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP1012UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -12.6A Pulsed drain current: -55A Power dissipation: 1.36W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 40mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMP1012UFDF-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -12.6A Pulsed drain current: -55A Power dissipation: 1.36W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 40mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP1022UFDEQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -9A; Idm: -90A; 1.3W Mounting: SMD Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Power dissipation: 1.3W Gate charge: 42.6nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -90A Case: U-DFN2020-6 Drain-source voltage: -12V Drain current: -9A On-state resistance: 0.16Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP1022UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Power dissipation: 1.3W Gate charge: 48.3nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -90A Case: U-DFN2020-6 Drain-source voltage: -12V Drain current: -8.8A On-state resistance: 32mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMP1022UFDF-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Power dissipation: 1.3W Gate charge: 48.3nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -90A Case: U-DFN2020-6 Drain-source voltage: -12V Drain current: -8.8A On-state resistance: 32mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP1045U-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -3.1A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2635 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP1045UFY4-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.1A Pulsed drain current: -25A Power dissipation: 1.1W Case: X2-DFN2015-3 Gate-source voltage: ±8V On-state resistance: 75mΩ Mounting: SMD Gate charge: 23.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2900 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP1046UFDB-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -15A; 2.2W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain current: -4A On-state resistance: 0.115Ω Type of transistor: P-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 17.9nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A Drain-source voltage: -12V Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMP1055UFDB-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.89W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar On-state resistance: 0.215Ω Drain current: -4A Drain-source voltage: -12V Gate charge: 20.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -25A Type of transistor: P-MOSFET Case: U-DFN2020-6 Power dissipation: 1.89W Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMP1055USW-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Drain current: -3A On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 1.03W Polarisation: unipolar Gate charge: 20.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Drain-source voltage: -12V Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP1055USW-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Drain current: -3A On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 1.03W Polarisation: unipolar Gate charge: 20.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Drain-source voltage: -12V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP10H400SE-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -2.1A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1265 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP10H400SEQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223 Case: SOT223 Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain current: -2.1A On-state resistance: 0.3Ω Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -100V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP10H400SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252 Case: TO252 Mounting: SMD Kind of package: reel; tape Drain current: -8A On-state resistance: 0.3Ω Type of transistor: P-MOSFET Power dissipation: 42W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -100V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1469 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP10H4D2S-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -210mA; Idm: -1A; 440mW Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain current: -210mA On-state resistance: 5mΩ Type of transistor: P-MOSFET Power dissipation: 0.44W Polarisation: unipolar Gate charge: 1.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -1A Drain-source voltage: -100V Anzahl je Verpackung: 10000 Stücke |
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DMP10H4D2S-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -0.21A; 0.38W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Drain current: -210mA On-state resistance: 5Ω Type of transistor: P-MOSFET Power dissipation: 0.38W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -100V Anzahl je Verpackung: 5 Stücke |
auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP1100UCB4-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; Idm: -13A; 1.1W Mounting: SMD Case: X2-WLB0808-4 Kind of package: reel; tape Gate charge: 14nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -13A Drain-source voltage: -12V Drain current: -2.6A On-state resistance: 0.4Ω Type of transistor: P-MOSFET Power dissipation: 1.1W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP1200UFR4-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2A; 1.26W; X2-DFN1010-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -2A Power dissipation: 1.26W Case: X2-DFN1010-3 Gate-source voltage: ±8V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| DMP1245UFCL-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5.25A; Idm: -16.67A; 1.7W Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -16.67A Case: X1-DFN1616-6 Drain-source voltage: -12V Drain current: -5.25A On-state resistance: 0.1Ω Type of transistor: P-MOSFET Power dissipation: 1.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 26.1nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP1555UFA-7B | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -0.2A; 0.36W; X2-DFN0806-3 Mounting: SMD Case: X2-DFN0806-3 Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: -12V Drain current: -200mA On-state resistance: 5Ω Type of transistor: P-MOSFET Power dissipation: 0.36W Polarisation: unipolar Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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| DMP2002UPS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -33.5A; Idm: -100A; 6.25W Mounting: SMD Type of transistor: P-MOSFET Drain current: -33.5A Drain-source voltage: -20V Power dissipation: 6.25W Polarisation: unipolar Kind of package: reel; tape Case: PowerDI5060-8 Gate charge: 585nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -100A On-state resistance: 3.8mΩ Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMP2003UPS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -120A; Idm: -350A; 2.7W Mounting: SMD Type of transistor: P-MOSFET Drain current: -120A Drain-source voltage: -20V Power dissipation: 2.7W Polarisation: unipolar Kind of package: reel; tape Case: PowerDI5060-8 Gate charge: 177nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -350A On-state resistance: 4mΩ Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP2004DMK-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -550mA; Idm: -1.9A; 500mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -550mA Pulsed drain current: -1.9A Power dissipation: 0.5W Case: SOT26 Gate-source voltage: ±8V On-state resistance: 2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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DMP2004DWK-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; 250mW; SOT363 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -310mA Power dissipation: 0.25W Case: SOT363 Gate-source voltage: ±8V On-state resistance: 2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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DMP2004K-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.6A Power dissipation: 0.55W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2660 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2004TK-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.75A; 320mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -310mA Pulsed drain current: -0.75A Power dissipation: 0.32W Case: SOT523 Gate-source voltage: ±8V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 970pC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2004UFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -95A Pulsed drain current: -180A Power dissipation: 2.4W Case: PowerDI3333-8 Gate-source voltage: ±12V On-state resistance: 7mΩ Mounting: SMD Gate charge: 83nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2004UFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -95A Pulsed drain current: -180A Power dissipation: 2.4W Case: PowerDI3333-8 Gate-source voltage: ±12V On-state resistance: 7mΩ Mounting: SMD Gate charge: 83nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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DMP2004VK-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.44A; 0.4W; SOT563 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.44A Power dissipation: 0.4W Case: SOT563 Gate-source voltage: ±8V On-state resistance: 1.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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|
DMP2004WK-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -400mA; Idm: -1.4A; 250mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.4A Pulsed drain current: -1.4A Power dissipation: 0.25W Case: SOT323 Gate-source voltage: ±8V On-state resistance: 2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| DMP2005UFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -15A On-state resistance: 14mΩ Type of transistor: P-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 125nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -100A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2005UFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W Case: PowerDI3333-8 Polarisation: unipolar Drain-source voltage: -20V Drain current: -15A On-state resistance: 14mΩ Type of transistor: P-MOSFET Power dissipation: 2.2W Kind of package: reel; tape Gate charge: 125nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -100A Mounting: SMD Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2006UFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W Case: PowerDI®3333-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -14A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 200nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -80A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2006UFGQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W Case: PowerDI3333-8 Polarisation: unipolar Drain-source voltage: -20V Drain current: -14A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Kind of package: reel; tape Gate charge: 200nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -80A Mounting: SMD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2006UFGQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W Case: PowerDI3333-8 Polarisation: unipolar Drain-source voltage: -20V Drain current: -14A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Kind of package: reel; tape Gate charge: 200nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -80A Mounting: SMD Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2007UFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -14.5A On-state resistance: 9mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 85nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -80A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2007UFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W Case: PowerDI3333-8 Polarisation: unipolar Drain-source voltage: -20V Drain current: -14.5A On-state resistance: 9mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Kind of package: reel; tape Gate charge: 85nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -80A Mounting: SMD Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2008UFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -11A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 2.4W Polarisation: unipolar Gate charge: 72nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -80A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2008UFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W Drain-source voltage: -20V Drain current: -11A On-state resistance: 8mΩ Type of transistor: P-MOSFET Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -80A Mounting: SMD Case: PowerDI®3333-8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2010UFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -12.7A; Idm: -80A; 2.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -12.7A Pulsed drain current: -80A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2010UFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -12.7A; Idm: -80A; 2.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -12.7A Pulsed drain current: -80A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2010UFV-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -40A Pulsed drain current: -80A Power dissipation: 2W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
| DMNH6042SPDQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMNH6042SPS-13 |
|
Hersteller: DIODES INCORPORATED
DMNH6042SPS-13 SMD N channel transistors
DMNH6042SPS-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMNH6042SPSQ-13 |
|
Hersteller: DIODES INCORPORATED
DMNH6042SPSQ-13 SMD N channel transistors
DMNH6042SPSQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMNH6042SSD-13 |
Hersteller: DIODES INCORPORATED
DMNH6042SSD-13 Multi channel transistors
DMNH6042SSD-13 Multi channel transistors
Produkt ist nicht verfügbar
| DMNH6042SSDQ-13 |
|
Hersteller: DIODES INCORPORATED
DMNH6042SSDQ-13 SMD N channel transistors
DMNH6042SSDQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMNH6065SPDW-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 108A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 108A
Power dissipation: 2.4W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 79mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 108A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 108A
Power dissipation: 2.4W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 79mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMNH6069SFVW-13 |
Hersteller: DIODES INCORPORATED
DMNH6069SFVW-13 SMD N channel transistors
DMNH6069SFVW-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMNH6069SFVW-7 |
Hersteller: DIODES INCORPORATED
DMNH6069SFVW-7 SMD N channel transistors
DMNH6069SFVW-7 SMD N channel transistors
Produkt ist nicht verfügbar
| DMP1005UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -10.3A
On-state resistance: 18.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -70A
Case: U-DFN2020-6
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -10.3A
On-state resistance: 18.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -70A
Case: U-DFN2020-6
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP1005UFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -10.3A
On-state resistance: 18.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -70A
Case: U-DFN2020-6
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -10.3A
On-state resistance: 18.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -70A
Case: U-DFN2020-6
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP1007UCB9-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -7.8A; Idm: -80A; 1.53W
Mounting: SMD
Case: U-WLB1515-9
Kind of package: reel; tape
Gate charge: 8.2nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -80A
Drain-source voltage: -8V
Drain current: -7.8A
On-state resistance: 9.1mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.53W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -7.8A; Idm: -80A; 1.53W
Mounting: SMD
Case: U-WLB1515-9
Kind of package: reel; tape
Gate charge: 8.2nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -80A
Drain-source voltage: -8V
Drain current: -7.8A
On-state resistance: 9.1mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.53W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP1009UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -12A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Kind of package: reel; tape
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -70A
Case: U-DFN2020-6
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -12A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Kind of package: reel; tape
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -70A
Case: U-DFN2020-6
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP1009UFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -12A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Kind of package: reel; tape
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -70A
Case: U-DFN2020-6
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -12A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Kind of package: reel; tape
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -70A
Case: U-DFN2020-6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP1009UFDFQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -12A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 2W
Kind of package: reel; tape
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -70A
Case: U-DFN2020-6
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -70A; 2W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -12A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 2W
Kind of package: reel; tape
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -70A
Case: U-DFN2020-6
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP1011LFV-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W
Mounting: SMD
Power dissipation: 2.16W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -70A
Case: PowerDI3333-8
Drain-source voltage: -12V
Drain current: -10A
On-state resistance: 18.6mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W
Mounting: SMD
Power dissipation: 2.16W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -70A
Case: PowerDI3333-8
Drain-source voltage: -12V
Drain current: -10A
On-state resistance: 18.6mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP1011LFV-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W
Mounting: SMD
Power dissipation: 2.16W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -70A
Case: PowerDI3333-8
Drain-source voltage: -12V
Drain current: -10A
On-state resistance: 18.6mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W
Mounting: SMD
Power dissipation: 2.16W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -70A
Case: PowerDI3333-8
Drain-source voltage: -12V
Drain current: -10A
On-state resistance: 18.6mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| DMP1011UCB9-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W
Mounting: SMD
Case: U-WLB1515-9
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -50A
Drain-source voltage: -8V
Drain current: -6A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.57W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W
Mounting: SMD
Case: U-WLB1515-9
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -50A
Drain-source voltage: -8V
Drain current: -6A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.57W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP1012UCB9-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W
Mounting: SMD
Case: U-WLB1515-9
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -50A
Drain-source voltage: -8V
Drain current: -6A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.57W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W
Mounting: SMD
Case: U-WLB1515-9
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -50A
Drain-source voltage: -8V
Drain current: -6A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.57W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP1012UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12.6A
Pulsed drain current: -55A
Power dissipation: 1.36W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12.6A
Pulsed drain current: -55A
Power dissipation: 1.36W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP1012UFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12.6A
Pulsed drain current: -55A
Power dissipation: 1.36W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12.6A
Pulsed drain current: -55A
Power dissipation: 1.36W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP1022UFDEQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -9A; Idm: -90A; 1.3W
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Power dissipation: 1.3W
Gate charge: 42.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -90A
Case: U-DFN2020-6
Drain-source voltage: -12V
Drain current: -9A
On-state resistance: 0.16Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -9A; Idm: -90A; 1.3W
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Power dissipation: 1.3W
Gate charge: 42.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -90A
Case: U-DFN2020-6
Drain-source voltage: -12V
Drain current: -9A
On-state resistance: 0.16Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP1022UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 1.3W
Gate charge: 48.3nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -90A
Case: U-DFN2020-6
Drain-source voltage: -12V
Drain current: -8.8A
On-state resistance: 32mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 1.3W
Gate charge: 48.3nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -90A
Case: U-DFN2020-6
Drain-source voltage: -12V
Drain current: -8.8A
On-state resistance: 32mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP1022UFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 1.3W
Gate charge: 48.3nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -90A
Case: U-DFN2020-6
Drain-source voltage: -12V
Drain current: -8.8A
On-state resistance: 32mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 1.3W
Gate charge: 48.3nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -90A
Case: U-DFN2020-6
Drain-source voltage: -12V
Drain current: -8.8A
On-state resistance: 32mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP1045U-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -3.1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -3.1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2635 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 325+ | 0.22 EUR |
| 560+ | 0.13 EUR |
| 625+ | 0.11 EUR |
| 725+ | 0.099 EUR |
| 770+ | 0.093 EUR |
| DMP1045UFY4-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.1A
Pulsed drain current: -25A
Power dissipation: 1.1W
Case: X2-DFN2015-3
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 23.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.1A
Pulsed drain current: -25A
Power dissipation: 1.1W
Case: X2-DFN2015-3
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 23.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2900 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 221+ | 0.32 EUR |
| 336+ | 0.21 EUR |
| 379+ | 0.19 EUR |
| 407+ | 0.18 EUR |
| 421+ | 0.17 EUR |
| 500+ | 0.16 EUR |
| DMP1046UFDB-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -15A; 2.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain current: -4A
On-state resistance: 0.115Ω
Type of transistor: P-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 17.9nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Drain-source voltage: -12V
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -15A; 2.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain current: -4A
On-state resistance: 0.115Ω
Type of transistor: P-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 17.9nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Drain-source voltage: -12V
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP1055UFDB-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.89W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 0.215Ω
Drain current: -4A
Drain-source voltage: -12V
Gate charge: 20.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -25A
Type of transistor: P-MOSFET
Case: U-DFN2020-6
Power dissipation: 1.89W
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.89W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 0.215Ω
Drain current: -4A
Drain-source voltage: -12V
Gate charge: 20.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -25A
Type of transistor: P-MOSFET
Case: U-DFN2020-6
Power dissipation: 1.89W
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP1055USW-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Drain current: -3A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 1.03W
Polarisation: unipolar
Gate charge: 20.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Drain-source voltage: -12V
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Drain current: -3A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 1.03W
Polarisation: unipolar
Gate charge: 20.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Drain-source voltage: -12V
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP1055USW-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Drain current: -3A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 1.03W
Polarisation: unipolar
Gate charge: 20.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Drain-source voltage: -12V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Drain current: -3A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 1.03W
Polarisation: unipolar
Gate charge: 20.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Drain-source voltage: -12V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP10H400SE-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2.1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2.1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1265 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 167+ | 0.43 EUR |
| 186+ | 0.39 EUR |
| 227+ | 0.32 EUR |
| 240+ | 0.3 EUR |
| 2500+ | 0.29 EUR |
| DMP10H400SEQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain current: -2.1A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -100V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain current: -2.1A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -100V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP10H400SK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Drain current: -8A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -100V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Drain current: -8A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1469 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 61+ | 1.17 EUR |
| 147+ | 0.49 EUR |
| 167+ | 0.43 EUR |
| 192+ | 0.37 EUR |
| 203+ | 0.35 EUR |
| DMP10H4D2S-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -210mA; Idm: -1A; 440mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain current: -210mA
On-state resistance: 5mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.44W
Polarisation: unipolar
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
Drain-source voltage: -100V
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -210mA; Idm: -1A; 440mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain current: -210mA
On-state resistance: 5mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.44W
Polarisation: unipolar
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
Drain-source voltage: -100V
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP10H4D2S-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.21A; 0.38W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Drain current: -210mA
On-state resistance: 5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.38W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -100V
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.21A; 0.38W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Drain current: -210mA
On-state resistance: 5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.38W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -100V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 70+ | 1.02 EUR |
| 100+ | 0.72 EUR |
| 180+ | 0.4 EUR |
| 500+ | 0.14 EUR |
| DMP1100UCB4-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; Idm: -13A; 1.1W
Mounting: SMD
Case: X2-WLB0808-4
Kind of package: reel; tape
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -13A
Drain-source voltage: -12V
Drain current: -2.6A
On-state resistance: 0.4Ω
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; Idm: -13A; 1.1W
Mounting: SMD
Case: X2-WLB0808-4
Kind of package: reel; tape
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -13A
Drain-source voltage: -12V
Drain current: -2.6A
On-state resistance: 0.4Ω
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP1200UFR4-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2A; 1.26W; X2-DFN1010-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Power dissipation: 1.26W
Case: X2-DFN1010-3
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2A; 1.26W; X2-DFN1010-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Power dissipation: 1.26W
Case: X2-DFN1010-3
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| DMP1245UFCL-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.25A; Idm: -16.67A; 1.7W
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -16.67A
Case: X1-DFN1616-6
Drain-source voltage: -12V
Drain current: -5.25A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26.1nC
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.25A; Idm: -16.67A; 1.7W
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -16.67A
Case: X1-DFN1616-6
Drain-source voltage: -12V
Drain current: -5.25A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26.1nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP1555UFA-7B |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -0.2A; 0.36W; X2-DFN0806-3
Mounting: SMD
Case: X2-DFN0806-3
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -12V
Drain current: -200mA
On-state resistance: 5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Anzahl je Verpackung: 10 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -0.2A; 0.36W; X2-DFN0806-3
Mounting: SMD
Case: X2-DFN0806-3
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -12V
Drain current: -200mA
On-state resistance: 5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
| DMP2002UPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -33.5A; Idm: -100A; 6.25W
Mounting: SMD
Type of transistor: P-MOSFET
Drain current: -33.5A
Drain-source voltage: -20V
Power dissipation: 6.25W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerDI5060-8
Gate charge: 585nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -100A
On-state resistance: 3.8mΩ
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -33.5A; Idm: -100A; 6.25W
Mounting: SMD
Type of transistor: P-MOSFET
Drain current: -33.5A
Drain-source voltage: -20V
Power dissipation: 6.25W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerDI5060-8
Gate charge: 585nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -100A
On-state resistance: 3.8mΩ
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMP2003UPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -120A; Idm: -350A; 2.7W
Mounting: SMD
Type of transistor: P-MOSFET
Drain current: -120A
Drain-source voltage: -20V
Power dissipation: 2.7W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerDI5060-8
Gate charge: 177nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -350A
On-state resistance: 4mΩ
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -120A; Idm: -350A; 2.7W
Mounting: SMD
Type of transistor: P-MOSFET
Drain current: -120A
Drain-source voltage: -20V
Power dissipation: 2.7W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerDI5060-8
Gate charge: 177nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -350A
On-state resistance: 4mΩ
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMP2004DMK-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -550mA; Idm: -1.9A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -550mA
Pulsed drain current: -1.9A
Power dissipation: 0.5W
Case: SOT26
Gate-source voltage: ±8V
On-state resistance: 2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -550mA; Idm: -1.9A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -550mA
Pulsed drain current: -1.9A
Power dissipation: 0.5W
Case: SOT26
Gate-source voltage: ±8V
On-state resistance: 2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2004DWK-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; 250mW; SOT363
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -310mA
Power dissipation: 0.25W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; 250mW; SOT363
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -310mA
Power dissipation: 0.25W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2004K-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.6A
Power dissipation: 0.55W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.6A
Power dissipation: 0.55W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2660 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 325+ | 0.22 EUR |
| 900+ | 0.08 EUR |
| 1055+ | 0.068 EUR |
| 1215+ | 0.059 EUR |
| 1285+ | 0.056 EUR |
| DMP2004TK-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.75A; 320mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -310mA
Pulsed drain current: -0.75A
Power dissipation: 0.32W
Case: SOT523
Gate-source voltage: ±8V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 970pC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.75A; 320mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -310mA
Pulsed drain current: -0.75A
Power dissipation: 0.32W
Case: SOT523
Gate-source voltage: ±8V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 970pC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2004UFG-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -95A
Pulsed drain current: -180A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±12V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -95A
Pulsed drain current: -180A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±12V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP2004UFG-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -95A
Pulsed drain current: -180A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±12V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -95A
Pulsed drain current: -180A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±12V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| DMP2004VK-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.44A; 0.4W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.44A
Power dissipation: 0.4W
Case: SOT563
Gate-source voltage: ±8V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.44A; 0.4W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.44A
Power dissipation: 0.4W
Case: SOT563
Gate-source voltage: ±8V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2004WK-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -400mA; Idm: -1.4A; 250mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.4A
Pulsed drain current: -1.4A
Power dissipation: 0.25W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -400mA; Idm: -1.4A; 250mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.4A
Pulsed drain current: -1.4A
Power dissipation: 0.25W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| DMP2005UFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -15A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 125nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -100A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -15A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 125nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -100A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP2005UFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W
Case: PowerDI3333-8
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.2W
Kind of package: reel; tape
Gate charge: 125nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -100A
Mounting: SMD
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W
Case: PowerDI3333-8
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.2W
Kind of package: reel; tape
Gate charge: 125nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -100A
Mounting: SMD
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| DMP2006UFG-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -14A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 200nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -80A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -14A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 200nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -80A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2006UFGQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Case: PowerDI3333-8
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Kind of package: reel; tape
Gate charge: 200nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -80A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Case: PowerDI3333-8
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Kind of package: reel; tape
Gate charge: 200nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -80A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP2006UFGQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Case: PowerDI3333-8
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Kind of package: reel; tape
Gate charge: 200nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -80A
Mounting: SMD
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Case: PowerDI3333-8
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Kind of package: reel; tape
Gate charge: 200nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -80A
Mounting: SMD
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| DMP2007UFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -14.5A
On-state resistance: 9mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 85nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -80A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -14.5A
On-state resistance: 9mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 85nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -80A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP2007UFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W
Case: PowerDI3333-8
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14.5A
On-state resistance: 9mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Kind of package: reel; tape
Gate charge: 85nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -80A
Mounting: SMD
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W
Case: PowerDI3333-8
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14.5A
On-state resistance: 9mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Kind of package: reel; tape
Gate charge: 85nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -80A
Mounting: SMD
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| DMP2008UFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -11A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 72nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -80A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -11A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 72nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -80A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP2008UFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W
Drain-source voltage: -20V
Drain current: -11A
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -80A
Mounting: SMD
Case: PowerDI®3333-8
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W
Drain-source voltage: -20V
Drain current: -11A
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -80A
Mounting: SMD
Case: PowerDI®3333-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2010UFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12.7A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12.7A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12.7A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12.7A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP2010UFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12.7A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12.7A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12.7A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12.7A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| DMP2010UFV-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -40A
Pulsed drain current: -80A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -40A
Pulsed drain current: -80A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
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