![DMP1012UFDF-7 DMP1012UFDF-7](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2517/31%3B%20U-DFN2020-6%3B%20F%3B%206.jpg)
DMP1012UFDF-7 Diodes Incorporated
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Description: MOSFET P-CH 12V 12.6A/20A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 4.5V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1344 pF @ 10 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.25 EUR |
6000+ | 0.24 EUR |
9000+ | 0.22 EUR |
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Technische Details DMP1012UFDF-7 Diodes Incorporated
Description: MOSFET P-CH 12V 12.6A/20A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 20A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 4.5V, Power Dissipation (Max): 720mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1344 pF @ 10 V.
Weitere Produktangebote DMP1012UFDF-7 nach Preis ab 0.24 EUR bis 0.75 EUR
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DMP1012UFDF-7 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 4.5V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1344 pF @ 10 V |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP1012UFDF-7 | Hersteller : Diodes Incorporated |
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auf Bestellung 2454 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP1012UFDF-7 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -12.6A Pulsed drain current: -55A Power dissipation: 1.36W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 40mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP1012UFDF-7 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -12.6A Pulsed drain current: -55A Power dissipation: 1.36W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 40mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |