DMP1046UFDB-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 12V 3.8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Description: MOSFET 2P-CH 12V 3.8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.18 EUR |
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Technische Details DMP1046UFDB-13 Diodes Incorporated
Description: MOSFET 2P-CH 12V 3.8A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 3.8A, Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V, Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B).
Weitere Produktangebote DMP1046UFDB-13 nach Preis ab 0.18 EUR bis 0.78 EUR
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DMP1046UFDB-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2P-CH 12V 3.8A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.8A Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
auf Bestellung 18950 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP1046UFDB-13 | Hersteller : Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 8Vgs 915pF 10.7nC |
auf Bestellung 77012 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP1046UFDB-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -15A; 2.2W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain current: -4A On-state resistance: 0.115Ω Type of transistor: P-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 17.9nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A Drain-source voltage: -12V Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP1046UFDB-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -15A; 2.2W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain current: -4A On-state resistance: 0.115Ω Type of transistor: P-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 17.9nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A Drain-source voltage: -12V |
Produkt ist nicht verfügbar |