DMP1100UCB4-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 2.5A WLB0808
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 83mOhm @ 3A, 4.5V
Power Dissipation (Max): 670mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: X2-WLB0808-4
Drive Voltage (Max Rds On, Min Rds On): 1.3V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 6 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 12V 2.5A WLB0808
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 83mOhm @ 3A, 4.5V
Power Dissipation (Max): 670mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: X2-WLB0808-4
Drive Voltage (Max Rds On, Min Rds On): 1.3V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 6 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 114000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.22 EUR |
6000+ | 0.21 EUR |
9000+ | 0.19 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP1100UCB4-7 Diodes Incorporated
Description: DIODES INC. - DMP1100UCB4-7 - Leistungs-MOSFET, p-Kanal, 12 V, 2.5 A, 0.065 ohm, X2-WLB0808, Oberflächenmontage, tariffCode: 85411000, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 12V, rohsCompliant: YES, Dauer-Drainstrom Id: 2.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 550mV, euEccn: NLR, Verlustleistung: 670mW, Bauform - Transistor: X2-WLB0808, Anzahl der Pins: 4Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 4.5V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.065ohm, SVHC: No SVHC (23-Jan-2024).
Weitere Produktangebote DMP1100UCB4-7 nach Preis ab 0.21 EUR bis 0.66 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMP1100UCB4-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 12V 2.5A WLB0808 Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 83mOhm @ 3A, 4.5V Power Dissipation (Max): 670mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: X2-WLB0808-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.3V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 6 V Qualification: AEC-Q101 |
auf Bestellung 117555 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP1100UCB4-7 | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V |
auf Bestellung 2989 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP1100UCB4-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMP1100UCB4-7 - Leistungs-MOSFET, p-Kanal, 12 V, 2.5 A, 0.065 ohm, X2-WLB0808, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 670mW Bauform - Transistor: X2-WLB0808 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.065ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 5755 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP1100UCB4-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMP1100UCB4-7 - Leistungs-MOSFET, p-Kanal, 12 V, 2.5 A, 0.065 ohm, X2-WLB0808, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 670mW Bauform - Transistor: X2-WLB0808 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.065ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 5755 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP1100UCB4-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; Idm: -13A; 1.1W Mounting: SMD Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Case: X2-WLB0808-4 Gate charge: 14nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -13A Drain-source voltage: -12V Drain current: -2.6A On-state resistance: 0.4Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP1100UCB4-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; Idm: -13A; 1.1W Mounting: SMD Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Case: X2-WLB0808-4 Gate charge: 14nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -13A Drain-source voltage: -12V Drain current: -2.6A On-state resistance: 0.4Ω Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |