DMP1012UCB9-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 8V 10A U-WLB1515-9
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V
Power Dissipation (Max): 890mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.48 EUR |
| 6000+ | 0.45 EUR |
| 9000+ | 0.43 EUR |
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Technische Details DMP1012UCB9-7 Diodes Incorporated
Description: MOSFET P-CH 8V 10A U-WLB1515-9, Packaging: Tape & Reel (TR), Package / Case: 9-UFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V, Power Dissipation (Max): 890mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: U-WLB1515-9, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V.
Weitere Produktangebote DMP1012UCB9-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMP1012UCB9-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W Mounting: SMD Case: U-WLB1515-9 Kind of package: reel; tape Gate charge: 10.5nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -50A Drain-source voltage: -8V Drain current: -6A On-state resistance: 14mΩ Type of transistor: P-MOSFET Power dissipation: 1.57W Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMP1012UCB9-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET |
Produkt ist nicht verfügbar |
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| DMP1012UCB9-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W Mounting: SMD Case: U-WLB1515-9 Kind of package: reel; tape Gate charge: 10.5nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -50A Drain-source voltage: -8V Drain current: -6A On-state resistance: 14mΩ Type of transistor: P-MOSFET Power dissipation: 1.57W Polarisation: unipolar |
Produkt ist nicht verfügbar |