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DMN3115UDMQ-13 DMN3115UDMQ-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; Idm: 12.8A; 900mW; SOT26
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 3.2A
On-state resistance: 0.13Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.9W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 12.8A
Mounting: SMD
Case: SOT26
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3135LVT-7 DMN3135LVT-7 DIODES INCORPORATED DMN3135LVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 25A; 0.84W; TSOT26
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.84W
Polarisation: unipolar
Case: TSOT26
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain-source voltage: 30V
Drain current: 2.7A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3135LVTQ-7 DMN3135LVTQ-7 DIODES INCORPORATED DMN3135LVTQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; Idm: 25A; 1.27W; TSOT26
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.27W
Polarisation: unipolar
Gate charge: 9nC
Case: TSOT26
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain-source voltage: 30V
Drain current: 3.3A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN313DLT-7 DMN313DLT-7 DIODES INCORPORATED DMN313DLT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 1.2A; 520mW; SOT523
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 3.2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.52W
Polarisation: unipolar
Gate charge: 0.5nC
Case: SOT523
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Drain-source voltage: 30V
Drain current: 0.3A
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
DMN3150L-7 DMN3150L-7 DIODES INCORPORATED ds31126.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 1.4W; SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 15A
Drain-source voltage: 30V
Drain current: 3.1A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1815 Stücke:
Lieferzeit 7-14 Tag (e)
380+0.19 EUR
525+ 0.14 EUR
590+ 0.12 EUR
685+ 0.1 EUR
725+ 0.099 EUR
Mindestbestellmenge: 380
DMN3150LW-7 DMN3150LW-7 DIODES INCORPORATED ds31514.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 28V; 1.2A; Idm: 6.4A; 350mW; SOT323
Mounting: SMD
Drain-source voltage: 28V
Drain current: 1.2A
On-state resistance: 138mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 6.4A
Case: SOT323
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3190LDW-13 DMN3190LDW-13 DIODES INCORPORATED DMN3190LDW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1A; Idm: 9.6A; 400mW; SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 335mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.4W
Polarisation: unipolar
Gate charge: 2nC
Case: SOT363
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 9.6A
Drain-source voltage: 30V
Drain current: 1A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3190LDW-7 DMN3190LDW-7 DIODES INCORPORATED DMN3190LDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.32W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Case: SOT363
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 9.6A
Drain-source voltage: 30V
Drain current: 0.9A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)
345+0.21 EUR
635+ 0.11 EUR
715+ 0.1 EUR
795+ 0.09 EUR
850+ 0.084 EUR
Mindestbestellmenge: 345
DMN3190LDWQ-7 DMN3190LDWQ-7 DIODES INCORPORATED DMN3190LDWQ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 1A; Idm: 2A; 250mW; SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 335mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 0.25W
Polarisation: unipolar
Gate charge: 2nC
Case: SOT363
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 2A
Drain-source voltage: 30V
Drain current: 1A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN31D5L-7 DMN31D5L-7 DIODES INCORPORATED DMN31D5L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 400mA; Idm: 5A; 520mW; SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.52W
Polarisation: unipolar
Gate charge: 1.2nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 5A
Drain-source voltage: 30V
Drain current: 0.4A
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
DMN31D5UDJ-7 DIODES INCORPORATED DMN31D5UDJ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160mA; Idm: 0.6A; 350mW; SOT963
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 0.38nC
Case: SOT963
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.6A
Drain-source voltage: 30V
Drain current: 0.16A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN31D5UFO-7B DIODES INCORPORATED DMN31D5UFO.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.32A; Idm: 0.7A; 0.38W
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.38W
Polarisation: unipolar
Gate charge: 0.38nC
Case: X2-DFN0604-3
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.7A
Drain-source voltage: 30V
Drain current: 0.32A
Anzahl je Verpackung: 20 Stücke
Produkt ist nicht verfügbar
DMN31D5UFZ-7B DIODES INCORPORATED DMN31D5UFZ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150mA; Idm: 0.5A; 393mW
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 393mW
Polarisation: unipolar
Gate charge: 0.35nC
Case: X2-DFN0606-3
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.5A
Drain-source voltage: 30V
Drain current: 0.15A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN31D6UT-7 DMN31D6UT-7 DIODES INCORPORATED DMN31D6UT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 350mA; Idm: 0.8A; 320mW; SOT523
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.32W
Polarisation: unipolar
Gate charge: 0.35nC
Case: SOT523
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.8A
Drain-source voltage: 30V
Drain current: 0.35A
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
DMN3200U-7 DMN3200U-7 DIODES INCORPORATED ds31188.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.2A; Idm: 9A; 650mW; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.2A
Pulsed drain current: 9A
Power dissipation: 0.65W
Case: SOT23-3
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3605 Stücke:
Lieferzeit 7-14 Tag (e)
295+0.24 EUR
355+ 0.2 EUR
400+ 0.18 EUR
460+ 0.16 EUR
490+ 0.15 EUR
3000+ 0.14 EUR
Mindestbestellmenge: 295
DMN32D2LDF-7 DMN32D2LDF-7 DIODES INCORPORATED ds31238.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.28W
Case: SOT353
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common source
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)
315+0.23 EUR
575+ 0.13 EUR
720+ 0.1 EUR
815+ 0.088 EUR
855+ 0.084 EUR
860+ 0.083 EUR
3000+ 0.08 EUR
Mindestbestellmenge: 315
DMN32D2LFB4-7 DIODES INCORPORATED ds31124.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; 350mW; X2-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Power dissipation: 0.35W
Case: X2-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN32D4SDW-13 DMN32D4SDW-13 DIODES INCORPORATED DMN32D4SDW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; 350mW; SOT363
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 1.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 4A
Drain-source voltage: 30V
Drain current: 0.5A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN32D4SDW-7 DMN32D4SDW-7 DIODES INCORPORATED DMN32D4SDW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; 350mW; SOT363
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 1.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 4A
Drain-source voltage: 30V
Drain current: 0.5A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN3300UQ-7 DMN3300UQ-7 DIODES INCORPORATED DMN3300UQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 8A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.6A
Pulsed drain current: 8A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN33D8LDW-13 DIODES INCORPORATED DMN33D8LDW.pdf DMN33D8LDW-13 Multi channel transistors
Produkt ist nicht verfügbar
DMN33D8LDW-7 DIODES INCORPORATED DMN33D8LDW.pdf DMN33D8LDW-7 Multi channel transistors
Produkt ist nicht verfügbar
DMN33D8LT-13 DMN33D8LT-13 DIODES INCORPORATED DMN33D8LT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 115mA; 300mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.115A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 1.23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN33D8LT-7 DIODES INCORPORATED DMN33D8LT.pdf DMN33D8LT-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN33D9LV-13 DIODES INCORPORATED DMN33D9LV-13 Multi channel transistors
Produkt ist nicht verfügbar
DMN33D9LV-13A DIODES INCORPORATED DMN33D9LV-13A Multi channel transistors
Produkt ist nicht verfügbar
DMN33D9LV-7 DIODES INCORPORATED DMN33D9LV.pdf DMN33D9LV-7 Multi channel transistors
Produkt ist nicht verfügbar
DMN33D9LV-7A DIODES INCORPORATED DMN33D9LV.pdf DMN33D9LV-7A Multi channel transistors
Produkt ist nicht verfügbar
DMN3401LDW-13 DMN3401LDW-13 DIODES INCORPORATED DMN3401LDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW
Type of transistor: N-MOSFET x2
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.35W
On-state resistance: 0.7Ω
Polarisation: unipolar
Gate charge: 1.2nC
Gate-source voltage: ±20V
Pulsed drain current: 4A
Kind of channel: enhanced
Drain-source voltage: 30V
Drain current: 0.6A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3401LDW-7 DMN3401LDW-7 DIODES INCORPORATED DMN3401LDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW
Type of transistor: N-MOSFET x2
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.35W
On-state resistance: 0.7Ω
Polarisation: unipolar
Gate charge: 1.2nC
Gate-source voltage: ±20V
Pulsed drain current: 4A
Kind of channel: enhanced
Drain-source voltage: 30V
Drain current: 0.6A
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
DMN3404L-7 DMN3404L-7 DIODES INCORPORATED DMN3404L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.082Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 9605 Stücke:
Lieferzeit 7-14 Tag (e)
250+0.29 EUR
618+ 0.12 EUR
695+ 0.1 EUR
847+ 0.084 EUR
895+ 0.08 EUR
Mindestbestellmenge: 250
DMN3404LQ-7 DMN3404LQ-7 DIODES INCORPORATED DMN3404L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 30A; 1.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 30A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN3730U-7 DIODES INCORPORATED DMN3730U_Mar2022.pdf DMN3730U-7 SMD N channel transistors
auf Bestellung 1500 Stücke:
Lieferzeit 7-14 Tag (e)
295+0.24 EUR
580+ 0.12 EUR
Mindestbestellmenge: 295
DMN3730UFB-7 DIODES INCORPORATED DMN3730UFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
On-state resistance: 0.73Ω
Type of transistor: N-MOSFET
Power dissipation: 0.69W
Polarisation: unipolar
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 3A
Drain current: 730mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3730UFB4-7 DMN3730UFB4-7 DIODES INCORPORATED DMN3730UFB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.75A; Idm: 10A; 0.45W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
On-state resistance: 0.46Ω
Type of transistor: N-MOSFET
Power dissipation: 0.45W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 10A
Drain current: 0.75A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN3730UFB4-7B DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW
Case: X2-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
On-state resistance: 0.73Ω
Type of transistor: N-MOSFET
Power dissipation: 0.69W
Polarisation: unipolar
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 3A
Drain current: 730mA
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3731U-13 DMN3731U-13 DIODES INCORPORATED DMN3731U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.7A
Pulsed drain current: 3A
Power dissipation: 0.58W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.73Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3731U-7 DMN3731U-7 DIODES INCORPORATED DMN3731U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.7A
Pulsed drain current: 3A
Power dissipation: 0.58W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.73Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 20 Stücke
Produkt ist nicht verfügbar
DMN3731UFB4-7B DIODES INCORPORATED DMN3731UFB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 900mA; Idm: 3A; 970mW
Mounting: SMD
Case: X2-DFN1006-3
Kind of package: reel; tape
Pulsed drain current: 3A
Drain-source voltage: 30V
Drain current: 0.9A
On-state resistance: 0.73Ω
Type of transistor: N-MOSFET
Power dissipation: 970mW
Polarisation: unipolar
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3900UFA-7B DIODES INCORPORATED DMN3900UFA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 520mA; Idm: 2.5A; 390mW
Mounting: SMD
Case: X2-DFN0806-3
Kind of package: reel; tape
Power dissipation: 0.39W
Drain-source voltage: 30V
Drain current: 520mA
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.7nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 2.5A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN4008LFG-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Drain-source voltage: 40V
Drain current: 15.4A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 74nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN4008LFG-7 DIODES INCORPORATED DMN4008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Drain-source voltage: 40V
Drain current: 15.4A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 74nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
DMN4010LFG-13 DIODES INCORPORATED DMN4010LFG.pdf DMN4010LFG-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN4010LFG-7 DIODES INCORPORATED DMN4010LFG.pdf DMN4010LFG-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN4010LK3-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.5A; Idm: 80A; 2.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9.5A
Pulsed drain current: 80A
Power dissipation: 2.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN4020LFDE-13 DIODES INCORPORATED DMN4020LFDE.pdf DMN4020LFDE-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN4020LFDE-7 DIODES INCORPORATED DMN4020LFDE.pdf DMN4020LFDE-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN4020LFDEQ-7 DIODES INCORPORATED DMN4020LFDEQ-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN4026SK3-13 DIODES INCORPORATED DMN4026SK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 70A; 2.1W; TO252
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 18A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 21.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: TO252
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN4026SSD-13 DMN4026SSD-13 DIODES INCORPORATED DMN4026SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.2A; Idm: 70A; 1.1W; SO8
Polarisation: unipolar
On-state resistance: 32mΩ
Kind of package: reel; tape
Drain current: 7.2A
Drain-source voltage: 40V
Case: SO8
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 1.1W
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN4026SSDQ-13 DMN4026SSDQ-13 DIODES INCORPORATED DMN4026SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.2A; Idm: 70A; 1.1W; SO8
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 7.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN4027SSD-13 DMN4027SSD-13 DIODES INCORPORATED DMN4027SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.7A; Idm: 28A; 2.14W; SO8
Polarisation: unipolar
On-state resistance: 47mΩ
Kind of package: reel; tape
Drain current: 5.7A
Drain-source voltage: 40V
Case: SO8
Gate charge: 12.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 28A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2.14W
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN4027SSDQ-13 DMN4027SSDQ-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.7A; Idm: 28A; 2.14W; SO8
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 28A
Power dissipation: 2.14W
Gate charge: 12.9nC
Polarisation: unipolar
Drain current: 5.7A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SO8
On-state resistance: 47mΩ
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN4030LK3-13 DIODES INCORPORATED DMN4030LK3.pdf DMN4030LK3-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN4031SSD-13 DMN4031SSD-13 DIODES INCORPORATED DMN4031SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Polarisation: unipolar
On-state resistance: 50mΩ
Kind of package: reel; tape
Drain current: 5.6A
Drain-source voltage: 40V
Case: SO8
Gate charge: 18.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2.6W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN4031SSDQ-13 DMN4031SSDQ-13 DIODES INCORPORATED DMN4031SSDQ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 5.6A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 18.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN4034SSD-13 DMN4034SSD-13 DIODES INCORPORATED DMN4034SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 24.8A; 2.14W; SO8
Polarisation: unipolar
On-state resistance: 59mΩ
Kind of package: reel; tape
Drain current: 5A
Drain-source voltage: 40V
Case: SO8
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24.8A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2.14W
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN4034SSS-13 DIODES INCORPORATED DMN4034SSS.pdf DMN4034SSS-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN4035L-13 DIODES INCORPORATED DMN4035L.pdf DMN4035L-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN4035L-7 DIODES INCORPORATED DMN4035L.pdf DMN4035L-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN3115UDMQ-13
DMN3115UDMQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; Idm: 12.8A; 900mW; SOT26
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 3.2A
On-state resistance: 0.13Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.9W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 12.8A
Mounting: SMD
Case: SOT26
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3135LVT-7 DMN3135LVT.pdf
DMN3135LVT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 25A; 0.84W; TSOT26
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.84W
Polarisation: unipolar
Case: TSOT26
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain-source voltage: 30V
Drain current: 2.7A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3135LVTQ-7 DMN3135LVTQ.pdf
DMN3135LVTQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; Idm: 25A; 1.27W; TSOT26
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.27W
Polarisation: unipolar
Gate charge: 9nC
Case: TSOT26
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain-source voltage: 30V
Drain current: 3.3A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN313DLT-7 DMN313DLT.pdf
DMN313DLT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 1.2A; 520mW; SOT523
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 3.2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.52W
Polarisation: unipolar
Gate charge: 0.5nC
Case: SOT523
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Drain-source voltage: 30V
Drain current: 0.3A
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
DMN3150L-7 ds31126.pdf
DMN3150L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 1.4W; SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 15A
Drain-source voltage: 30V
Drain current: 3.1A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1815 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
380+0.19 EUR
525+ 0.14 EUR
590+ 0.12 EUR
685+ 0.1 EUR
725+ 0.099 EUR
Mindestbestellmenge: 380
DMN3150LW-7 ds31514.pdf
DMN3150LW-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 28V; 1.2A; Idm: 6.4A; 350mW; SOT323
Mounting: SMD
Drain-source voltage: 28V
Drain current: 1.2A
On-state resistance: 138mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 6.4A
Case: SOT323
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3190LDW-13 DMN3190LDW.pdf
DMN3190LDW-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1A; Idm: 9.6A; 400mW; SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 335mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.4W
Polarisation: unipolar
Gate charge: 2nC
Case: SOT363
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 9.6A
Drain-source voltage: 30V
Drain current: 1A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3190LDW-7 DMN3190LDW.pdf
DMN3190LDW-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.32W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Case: SOT363
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 9.6A
Drain-source voltage: 30V
Drain current: 0.9A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
345+0.21 EUR
635+ 0.11 EUR
715+ 0.1 EUR
795+ 0.09 EUR
850+ 0.084 EUR
Mindestbestellmenge: 345
DMN3190LDWQ-7 DMN3190LDWQ.pdf
DMN3190LDWQ-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 1A; Idm: 2A; 250mW; SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 335mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 0.25W
Polarisation: unipolar
Gate charge: 2nC
Case: SOT363
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 2A
Drain-source voltage: 30V
Drain current: 1A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN31D5L-7 DMN31D5L.pdf
DMN31D5L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 400mA; Idm: 5A; 520mW; SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.52W
Polarisation: unipolar
Gate charge: 1.2nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 5A
Drain-source voltage: 30V
Drain current: 0.4A
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
DMN31D5UDJ-7 DMN31D5UDJ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160mA; Idm: 0.6A; 350mW; SOT963
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 0.38nC
Case: SOT963
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.6A
Drain-source voltage: 30V
Drain current: 0.16A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN31D5UFO-7B DMN31D5UFO.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.32A; Idm: 0.7A; 0.38W
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.38W
Polarisation: unipolar
Gate charge: 0.38nC
Case: X2-DFN0604-3
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.7A
Drain-source voltage: 30V
Drain current: 0.32A
Anzahl je Verpackung: 20 Stücke
Produkt ist nicht verfügbar
DMN31D5UFZ-7B DMN31D5UFZ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150mA; Idm: 0.5A; 393mW
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 393mW
Polarisation: unipolar
Gate charge: 0.35nC
Case: X2-DFN0606-3
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.5A
Drain-source voltage: 30V
Drain current: 0.15A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN31D6UT-7 DMN31D6UT.pdf
DMN31D6UT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 350mA; Idm: 0.8A; 320mW; SOT523
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.32W
Polarisation: unipolar
Gate charge: 0.35nC
Case: SOT523
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.8A
Drain-source voltage: 30V
Drain current: 0.35A
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
DMN3200U-7 ds31188.pdf
DMN3200U-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.2A; Idm: 9A; 650mW; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.2A
Pulsed drain current: 9A
Power dissipation: 0.65W
Case: SOT23-3
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3605 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
295+0.24 EUR
355+ 0.2 EUR
400+ 0.18 EUR
460+ 0.16 EUR
490+ 0.15 EUR
3000+ 0.14 EUR
Mindestbestellmenge: 295
DMN32D2LDF-7 ds31238.pdf
DMN32D2LDF-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.28W
Case: SOT353
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common source
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
315+0.23 EUR
575+ 0.13 EUR
720+ 0.1 EUR
815+ 0.088 EUR
855+ 0.084 EUR
860+ 0.083 EUR
3000+ 0.08 EUR
Mindestbestellmenge: 315
DMN32D2LFB4-7 ds31124.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; 350mW; X2-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Power dissipation: 0.35W
Case: X2-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN32D4SDW-13 DMN32D4SDW.pdf
DMN32D4SDW-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; 350mW; SOT363
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 1.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 4A
Drain-source voltage: 30V
Drain current: 0.5A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN32D4SDW-7 DMN32D4SDW.pdf
DMN32D4SDW-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; 350mW; SOT363
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 1.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 4A
Drain-source voltage: 30V
Drain current: 0.5A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN3300UQ-7 DMN3300UQ.pdf
DMN3300UQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 8A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.6A
Pulsed drain current: 8A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN33D8LDW-13 DMN33D8LDW.pdf
Hersteller: DIODES INCORPORATED
DMN33D8LDW-13 Multi channel transistors
Produkt ist nicht verfügbar
DMN33D8LDW-7 DMN33D8LDW.pdf
Hersteller: DIODES INCORPORATED
DMN33D8LDW-7 Multi channel transistors
Produkt ist nicht verfügbar
DMN33D8LT-13 DMN33D8LT.pdf
DMN33D8LT-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 115mA; 300mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.115A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 1.23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN33D8LT-7 DMN33D8LT.pdf
Hersteller: DIODES INCORPORATED
DMN33D8LT-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN33D9LV-13
Hersteller: DIODES INCORPORATED
DMN33D9LV-13 Multi channel transistors
Produkt ist nicht verfügbar
DMN33D9LV-13A
Hersteller: DIODES INCORPORATED
DMN33D9LV-13A Multi channel transistors
Produkt ist nicht verfügbar
DMN33D9LV-7 DMN33D9LV.pdf
Hersteller: DIODES INCORPORATED
DMN33D9LV-7 Multi channel transistors
Produkt ist nicht verfügbar
DMN33D9LV-7A DMN33D9LV.pdf
Hersteller: DIODES INCORPORATED
DMN33D9LV-7A Multi channel transistors
Produkt ist nicht verfügbar
DMN3401LDW-13 DMN3401LDW.pdf
DMN3401LDW-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW
Type of transistor: N-MOSFET x2
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.35W
On-state resistance: 0.7Ω
Polarisation: unipolar
Gate charge: 1.2nC
Gate-source voltage: ±20V
Pulsed drain current: 4A
Kind of channel: enhanced
Drain-source voltage: 30V
Drain current: 0.6A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3401LDW-7 DMN3401LDW.pdf
DMN3401LDW-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW
Type of transistor: N-MOSFET x2
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.35W
On-state resistance: 0.7Ω
Polarisation: unipolar
Gate charge: 1.2nC
Gate-source voltage: ±20V
Pulsed drain current: 4A
Kind of channel: enhanced
Drain-source voltage: 30V
Drain current: 0.6A
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
DMN3404L-7 DMN3404L.pdf
DMN3404L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.082Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 9605 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
250+0.29 EUR
618+ 0.12 EUR
695+ 0.1 EUR
847+ 0.084 EUR
895+ 0.08 EUR
Mindestbestellmenge: 250
DMN3404LQ-7 DMN3404L.pdf
DMN3404LQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 30A; 1.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 30A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN3730U-7 DMN3730U_Mar2022.pdf
Hersteller: DIODES INCORPORATED
DMN3730U-7 SMD N channel transistors
auf Bestellung 1500 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
295+0.24 EUR
580+ 0.12 EUR
Mindestbestellmenge: 295
DMN3730UFB-7 DMN3730UFB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW
Case: X1-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
On-state resistance: 0.73Ω
Type of transistor: N-MOSFET
Power dissipation: 0.69W
Polarisation: unipolar
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 3A
Drain current: 730mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3730UFB4-7 DMN3730UFB4.pdf
DMN3730UFB4-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.75A; Idm: 10A; 0.45W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
On-state resistance: 0.46Ω
Type of transistor: N-MOSFET
Power dissipation: 0.45W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 10A
Drain current: 0.75A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN3730UFB4-7B
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW
Case: X2-DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
On-state resistance: 0.73Ω
Type of transistor: N-MOSFET
Power dissipation: 0.69W
Polarisation: unipolar
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 3A
Drain current: 730mA
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3731U-13 DMN3731U.pdf
DMN3731U-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.7A
Pulsed drain current: 3A
Power dissipation: 0.58W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.73Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3731U-7 DMN3731U.pdf
DMN3731U-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.7A
Pulsed drain current: 3A
Power dissipation: 0.58W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.73Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 20 Stücke
Produkt ist nicht verfügbar
DMN3731UFB4-7B DMN3731UFB4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 900mA; Idm: 3A; 970mW
Mounting: SMD
Case: X2-DFN1006-3
Kind of package: reel; tape
Pulsed drain current: 3A
Drain-source voltage: 30V
Drain current: 0.9A
On-state resistance: 0.73Ω
Type of transistor: N-MOSFET
Power dissipation: 970mW
Polarisation: unipolar
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3900UFA-7B DMN3900UFA.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 520mA; Idm: 2.5A; 390mW
Mounting: SMD
Case: X2-DFN0806-3
Kind of package: reel; tape
Power dissipation: 0.39W
Drain-source voltage: 30V
Drain current: 520mA
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.7nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 2.5A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN4008LFG-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Drain-source voltage: 40V
Drain current: 15.4A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 74nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN4008LFG-7 DMN4008LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Drain-source voltage: 40V
Drain current: 15.4A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 74nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
DMN4010LFG-13 DMN4010LFG.pdf
Hersteller: DIODES INCORPORATED
DMN4010LFG-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN4010LFG-7 DMN4010LFG.pdf
Hersteller: DIODES INCORPORATED
DMN4010LFG-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN4010LK3-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.5A; Idm: 80A; 2.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9.5A
Pulsed drain current: 80A
Power dissipation: 2.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN4020LFDE-13 DMN4020LFDE.pdf
Hersteller: DIODES INCORPORATED
DMN4020LFDE-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN4020LFDE-7 DMN4020LFDE.pdf
Hersteller: DIODES INCORPORATED
DMN4020LFDE-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN4020LFDEQ-7
Hersteller: DIODES INCORPORATED
DMN4020LFDEQ-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN4026SK3-13 DMN4026SK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 70A; 2.1W; TO252
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 18A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 21.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: TO252
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN4026SSD-13 DMN4026SSD.pdf
DMN4026SSD-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.2A; Idm: 70A; 1.1W; SO8
Polarisation: unipolar
On-state resistance: 32mΩ
Kind of package: reel; tape
Drain current: 7.2A
Drain-source voltage: 40V
Case: SO8
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 1.1W
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN4026SSDQ-13 DMN4026SSD.pdf
DMN4026SSDQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.2A; Idm: 70A; 1.1W; SO8
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 7.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN4027SSD-13 DMN4027SSD.pdf
DMN4027SSD-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.7A; Idm: 28A; 2.14W; SO8
Polarisation: unipolar
On-state resistance: 47mΩ
Kind of package: reel; tape
Drain current: 5.7A
Drain-source voltage: 40V
Case: SO8
Gate charge: 12.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 28A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2.14W
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN4027SSDQ-13
DMN4027SSDQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.7A; Idm: 28A; 2.14W; SO8
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 28A
Power dissipation: 2.14W
Gate charge: 12.9nC
Polarisation: unipolar
Drain current: 5.7A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SO8
On-state resistance: 47mΩ
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN4030LK3-13 DMN4030LK3.pdf
Hersteller: DIODES INCORPORATED
DMN4030LK3-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN4031SSD-13 DMN4031SSD.pdf
DMN4031SSD-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Polarisation: unipolar
On-state resistance: 50mΩ
Kind of package: reel; tape
Drain current: 5.6A
Drain-source voltage: 40V
Case: SO8
Gate charge: 18.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2.6W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN4031SSDQ-13 DMN4031SSDQ.pdf
DMN4031SSDQ-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 5.6A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 18.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN4034SSD-13 DMN4034SSD.pdf
DMN4034SSD-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 24.8A; 2.14W; SO8
Polarisation: unipolar
On-state resistance: 59mΩ
Kind of package: reel; tape
Drain current: 5A
Drain-source voltage: 40V
Case: SO8
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24.8A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2.14W
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN4034SSS-13 DMN4034SSS.pdf
Hersteller: DIODES INCORPORATED
DMN4034SSS-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN4035L-13 DMN4035L.pdf
Hersteller: DIODES INCORPORATED
DMN4035L-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN4035L-7 DMN4035L.pdf
Hersteller: DIODES INCORPORATED
DMN4035L-7 SMD N channel transistors
Produkt ist nicht verfügbar
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