Technische Details DMN3115UDMQ-13 Diodes Inc
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; Idm: 12.8A; 900mW; SOT26, Kind of package: reel; tape, Drain-source voltage: 30V, Drain current: 3.2A, On-state resistance: 0.13Ω, Type of transistor: N-MOSFET, Application: automotive industry, Power dissipation: 0.9W, Polarisation: unipolar, Kind of channel: enhanced, Gate-source voltage: ±8V, Pulsed drain current: 12.8A, Mounting: SMD, Case: SOT26, Anzahl je Verpackung: 10000 Stücke.
Weitere Produktangebote DMN3115UDMQ-13
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DMN3115UDMQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; Idm: 12.8A; 900mW; SOT26 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 3.2A On-state resistance: 0.13Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 0.9W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 12.8A Mounting: SMD Case: SOT26 Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMN3115UDMQ-13 | Hersteller : Diodes Incorporated |
 MOSFET MOSFET BVDSS: 25V-30V SOT26 T&R 10K |
Produkt ist nicht verfügbar |
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DMN3115UDMQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; Idm: 12.8A; 900mW; SOT26 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 3.2A On-state resistance: 0.13Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 0.9W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 12.8A Mounting: SMD Case: SOT26 |
Produkt ist nicht verfügbar |