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DMN4027SSDQ-13

DMN4027SSDQ-13 DIODES INCORPORATED


Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.7A; Idm: 28A; 2.14W; SO8
Application: automotive industry
Power dissipation: 2.14W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 28A
Mounting: SMD
Case: SO8
Drain-source voltage: 40V
Drain current: 5.7A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
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Technische Details DMN4027SSDQ-13 DIODES INCORPORATED

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 5.7A; Idm: 28A; 2.14W; SO8, Application: automotive industry, Power dissipation: 2.14W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 12.9nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 28A, Mounting: SMD, Case: SO8, Drain-source voltage: 40V, Drain current: 5.7A, On-state resistance: 47mΩ, Type of transistor: N-MOSFET, Anzahl je Verpackung: 2500 Stücke.

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DMN4027SSDQ-13 DMN4027SSDQ-13 Hersteller : DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.7A; Idm: 28A; 2.14W; SO8
Application: automotive industry
Power dissipation: 2.14W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 28A
Mounting: SMD
Case: SO8
Drain-source voltage: 40V
Drain current: 5.7A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar