DMN31D5UFO-7B Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 25V~30V X2-DFN0604
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0604-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 22.6 pF @ 15 V
auf Bestellung 490000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.061 EUR |
| 30000+ | 0.06 EUR |
| 50000+ | 0.054 EUR |
| 100000+ | 0.048 EUR |
| 250000+ | 0.047 EUR |
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Technische Details DMN31D5UFO-7B Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0604, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 410mA (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, Power Dissipation (Max): 380mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN0604-3, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.38 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 22.6 pF @ 15 V.
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Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMN31D5UFO-7B | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.32A; Idm: 0.7A; 0.38W Mounting: SMD Kind of package: reel; tape On-state resistance: 4.5Ω Type of transistor: N-MOSFET Power dissipation: 0.38W Polarisation: unipolar Gate charge: 0.38nC Case: X2-DFN0604-3 Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 0.7A Drain-source voltage: 30V Drain current: 0.32A Anzahl je Verpackung: 20 Stücke |
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| DMN31D5UFO-7B | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V X2-DFN0604-3 T&R 10K |
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| DMN31D5UFO-7B | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.32A; Idm: 0.7A; 0.38W Mounting: SMD Kind of package: reel; tape On-state resistance: 4.5Ω Type of transistor: N-MOSFET Power dissipation: 0.38W Polarisation: unipolar Gate charge: 0.38nC Case: X2-DFN0604-3 Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 0.7A Drain-source voltage: 30V Drain current: 0.32A |
Produkt ist nicht verfügbar |