DMN4034SSD-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 40V 4.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.58 EUR |
| 5000+ | 0.55 EUR |
| 12500+ | 0.52 EUR |
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Technische Details DMN4034SSD-13 Diodes Incorporated
Description: MOSFET 2N-CH 40V 4.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 4.8A, Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V, Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMN4034SSD-13 nach Preis ab 0.56 EUR bis 1.39 EUR
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DMN4034SSD-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET,N-CHANNEL 40V, 4.8A/- 6.3A |
auf Bestellung 4554 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN4034SSD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 40V 4.8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.8A Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 90374 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN4034SSD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 24.8A; 2.14W; SO8 Polarisation: unipolar On-state resistance: 59mΩ Kind of package: reel; tape Drain current: 5A Drain-source voltage: 40V Case: SO8 Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 24.8A Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 2.14W Anzahl je Verpackung: 2500 Stücke |
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DMN4034SSD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 24.8A; 2.14W; SO8 Polarisation: unipolar On-state resistance: 59mΩ Kind of package: reel; tape Drain current: 5A Drain-source voltage: 40V Case: SO8 Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 24.8A Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 2.14W |
Produkt ist nicht verfügbar |