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DMN4010LK3-13 DIODES INCORPORATED


Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.5A; Idm: 80A; 2.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9.5A
Pulsed drain current: 80A
Power dissipation: 2.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
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Technische Details DMN4010LK3-13 DIODES INCORPORATED

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 9.5A; Idm: 80A; 2.4W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 9.5A, Pulsed drain current: 80A, Power dissipation: 2.4W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 14.5mΩ, Mounting: SMD, Gate charge: 37nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 2500 Stücke.

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DMN4010LK3-13 Hersteller : DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.5A; Idm: 80A; 2.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9.5A
Pulsed drain current: 80A
Power dissipation: 2.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar