auf Bestellung 80000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.082 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN32D4SDW-13 Diodes Zetex
Description: MOSFET 2N-CH 30V 0.65A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 290mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 650mA, Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V, Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V, Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: SOT-363.
Weitere Produktangebote DMN32D4SDW-13 nach Preis ab 0.091 EUR bis 0.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMN32D4SDW-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 30V 0.65A SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 650mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-363 |
auf Bestellung 80000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
DMN32D4SDW-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 0.65A 6-Pin SOT-363 T/R |
Produkt ist nicht verfügbar |
|||||||
|
|
DMN32D4SDW-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 30V 0.65A 6-Pin SOT-363 T/R |
Produkt ist nicht verfügbar |
|||||||
 |
DMN32D4SDW-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; 350mW; SOT363 Mounting: SMD Case: SOT363 Kind of package: reel; tape Power dissipation: 0.35W Polarisation: unipolar Gate charge: 1.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 4A Drain-source voltage: 30V Drain current: 0.5A On-state resistance: 1Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
|||||||
 |
DMN32D4SDW-13 | Hersteller : Diodes Incorporated |
MOSFET 30V N-Ch Enh Mode 20Vgs 50pF 0.6nC |
Produkt ist nicht verfügbar |
|||||||
|
|
DMN32D4SDW-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; 350mW; SOT363 Mounting: SMD Case: SOT363 Kind of package: reel; tape Power dissipation: 0.35W Polarisation: unipolar Gate charge: 1.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 4A Drain-source voltage: 30V Drain current: 0.5A On-state resistance: 1Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |