DMN3730UFB-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 30V 750MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64.3 pF @ 25 V
auf Bestellung 138000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.3 EUR |
| 6000+ | 0.28 EUR |
| 15000+ | 0.26 EUR |
| 30000+ | 0.25 EUR |
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Technische Details DMN3730UFB-7 Diodes Incorporated
Description: MOSFET N-CH 30V 750MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, Power Dissipation (Max): 470mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: X1-DFN1006-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 64.3 pF @ 25 V.
Weitere Produktangebote DMN3730UFB-7 nach Preis ab 0.23 EUR bis 0.84 EUR
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DMN3730UFB-7 | Hersteller : Diodes Incorporated |
MOSFET 30V N-Ch VDSS 30V VGSS 8V VGS 4.5V |
auf Bestellung 12268 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3730UFB-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 750MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X1-DFN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 64.3 pF @ 25 V |
auf Bestellung 138002 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3730UFB-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW Case: X1-DFN1006-3 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V On-state resistance: 0.73Ω Type of transistor: N-MOSFET Power dissipation: 0.69W Polarisation: unipolar Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 3A Drain current: 730mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN3730UFB-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW Case: X1-DFN1006-3 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V On-state resistance: 0.73Ω Type of transistor: N-MOSFET Power dissipation: 0.69W Polarisation: unipolar Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 3A Drain current: 730mA |
Produkt ist nicht verfügbar |