Technische Details DMN3135LVTQ-7 Diodes Inc
Description: MOSFET 2N-CH 30V 3.5A TSOT26, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 840mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V, Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: TSOT-26, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMN3135LVTQ-7
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DMN3135LVTQ-7 | Hersteller : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 3.3A; Idm: 25A; 1.27W; TSOT26 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 1.27W Polarisation: unipolar Gate charge: 9nC Case: TSOT26 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A Drain-source voltage: 30V Drain current: 3.3A Anzahl je Verpackung: 1 Stücke |
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DMN3135LVTQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 3.5A TSOT26 Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 840mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Qualification: AEC-Q101 |
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| DMN3135LVTQ-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V TSOT26 T&R 3K |
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DMN3135LVTQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; Idm: 25A; 1.27W; TSOT26 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 1.27W Polarisation: unipolar Gate charge: 9nC Case: TSOT26 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A Drain-source voltage: 30V Drain current: 3.3A |
Produkt ist nicht verfügbar |