Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75942) > Seite 1250 nach 1266
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74LVCE1G06W5-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,inverter; Ch: 1; CMOS; SMD; SOT25; 1.4÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; inverter Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOT25 Supply voltage: 1.4...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: open drain Family: LVCE |
Produkt ist nicht verfügbar |
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74LVCE1G08SE-7 | DIODES INCORPORATED |
![]() Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC; LVCE Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT353 Supply voltage: 1.4...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: totem pole Family: LVCE |
Produkt ist nicht verfügbar |
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74LVCE1G08W5-7 | DIODES INCORPORATED |
![]() Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.4÷5.5VDC; LVCE Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT25 Supply voltage: 1.4...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: totem pole Family: LVCE |
Produkt ist nicht verfügbar |
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fmmt717 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 12V; 2.5A; 625mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 2.5A Power dissipation: 0.625W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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SMBJ48A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 53.3÷61.3V; 7.7A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 53.3...61.3V Max. forward impulse current: 7.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 4300 Stücke: Lieferzeit 14-21 Tag (e) |
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AP22816AKCWT-7 | DIODES INCORPORATED |
![]() Description: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
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AP22816AKEWT-7 | DIODES INCORPORATED |
![]() Description: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
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AP22816BKBWT-7 | DIODES INCORPORATED |
![]() Description: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
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AP22816BKEWT-7 | DIODES INCORPORATED |
![]() Description: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
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AP22817AKBWT-7 | DIODES INCORPORATED |
![]() Description: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
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AP22817AKEWT-7 | DIODES INCORPORATED |
![]() Description: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
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AP22818AKBWT-7 | DIODES INCORPORATED |
![]() Description: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
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AP22818AKCWT-7 | DIODES INCORPORATED |
![]() Description: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
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AP22818AKEWT-7 | DIODES INCORPORATED |
![]() Description: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
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AP22818AKWT-7 | DIODES INCORPORATED |
![]() Description: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
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AP22818BKBWT-7 | DIODES INCORPORATED |
![]() Description: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
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AP22818BKEWT-7 | DIODES INCORPORATED |
![]() Description: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
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ZXGD3006E6QTA | DIODES INCORPORATED |
![]() Description: IC: driver; gate driver; SOT26; -3.8÷4A; Ch: 1; 40V Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOT26 Output current: -3.8...4A Number of channels: 1 Supply voltage: 40V Mounting: SMD Operating temperature: -55...150°C Impulse rise time: 419ns Pulse fall time: 467ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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DMPH6250SQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.5A Pulsed drain current: -13A Power dissipation: 1.62W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMPH6250SQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.5A Pulsed drain current: -13A Power dissipation: 1.62W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SMAJ16AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 17.8÷19.7V; 15.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 15.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
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AL5817MP-13 | DIODES INCORPORATED |
![]() Description: IC: driver; LED driver; MSOP8EP; 15mA; Ch: 1; 4.5÷60V Number of channels: 1 Output current: 15mA Operating temperature: -40...125°C Mounting: SMD Type of integrated circuit: driver Kind of package: reel; tape Kind of integrated circuit: LED driver Case: MSOP8EP Operating voltage: 4.5...60V |
Produkt ist nicht verfügbar |
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PAM8906M1010-13 | DIODES INCORPORATED |
![]() Description: IC: driver; piezo sounder; MSOP10; 2.1÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder Case: MSOP10 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage supply range: 2.1...5.5V DC |
Produkt ist nicht verfügbar |
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PAM8906M1012-13 | DIODES INCORPORATED |
![]() Description: IC: driver; piezo sounder; MSOP10; 2.1÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder Case: MSOP10 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage supply range: 2.1...5.5V DC |
Produkt ist nicht verfügbar |
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PAM8906M1018-13 | DIODES INCORPORATED |
![]() Description: IC: driver; piezo sounder; MSOP10; 2.1÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder Case: MSOP10 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage supply range: 2.1...5.5V DC |
Produkt ist nicht verfügbar |
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DMT12H007LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 360A; 2.9W Mounting: SMD Kind of package: reel; tape Case: PowerDI5060-8 Power dissipation: 2.9W Drain-source voltage: 120V Drain current: 72A On-state resistance: 14.1mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 49nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 360A |
Produkt ist nicht verfügbar |
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DMT12H007SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 320A; 2.9W On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 2.9W Polarisation: unipolar Kind of package: reel; tape Mounting: SMD Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±20V Case: PowerDI5060-8 Pulsed drain current: 320A Drain-source voltage: 120V Drain current: 64A |
Produkt ist nicht verfügbar |
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DMT12H060LFDF-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tape Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMT12H065LFDF-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tape Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMT12H090LFDF4-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 115V; 2.7A; Idm: 15A; 1W Mounting: SMD Drain-source voltage: 115V Drain current: 2.7A On-state resistance: 0.35Ω Type of transistor: N-MOSFET Case: X2-DFN2020-6 Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 15A |
Produkt ist nicht verfügbar |
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BZX84C51-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 51V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 51V Kind of package: reel; tape Case: SOT23 Mounting: SMD Tolerance: ±6% Semiconductor structure: single diode |
auf Bestellung 3099 Stücke: Lieferzeit 14-21 Tag (e) |
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DGD0211CWTQ-7 | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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DGD0215WT-7 | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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DGD0216WT-7 | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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DGD0227S8-13 | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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DGD0280WT-7 | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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DGD0503FN-7 | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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DGD0504FN-7 | DIODES INCORPORATED |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver Case: WDFN3030-10 Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
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DGD0506AFN-7 | DIODES INCORPORATED |
![]() Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A Case: WDFN3030-10 Kind of package: reel; tape Mounting: SMD Output current: -2...1.5A Type of integrated circuit: driver Impulse rise time: 35ns Pulse fall time: 25ns Number of channels: 1 Kind of integrated circuit: gate driver; high-side Topology: MOSFET half-bridge Operating temperature: -40...125°C Supply voltage: 8...14V |
Produkt ist nicht verfügbar |
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DGD0506AM10-13 | DIODES INCORPORATED |
![]() Description: IC: driver; MOSFET half-bridge; high-side,gate driver; MSOP10 Case: MSOP10 Kind of package: reel; tape Mounting: SMD Output current: -2...1.5A Type of integrated circuit: driver Impulse rise time: 35ns Pulse fall time: 25ns Number of channels: 1 Kind of integrated circuit: gate driver; high-side Topology: MOSFET half-bridge Operating temperature: -40...125°C Supply voltage: 8...14V |
Produkt ist nicht verfügbar |
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DGD0507AFN-7 | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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DGD05463FN-7 | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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DGD05473FN-7 | DIODES INCORPORATED |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1 Mounting: SMD Case: VDFN10 Operating temperature: -40...125°C Kind of package: reel; tape Output current: -2.5...1.5A Type of integrated circuit: driver Impulse rise time: 30ns Pulse fall time: 25ns Number of channels: 1 Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Supply voltage: 4.2...14V |
Produkt ist nicht verfügbar |
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DGD05473FNQ-7 | DIODES INCORPORATED |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1 Mounting: SMD Case: U-DFN3030-10 Operating temperature: -40...125°C Kind of package: reel; tape Output current: -2.5...1.5A Type of integrated circuit: driver Impulse rise time: 30ns Pulse fall time: 25ns Number of channels: 1 Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Supply voltage: 4.4...14V |
Produkt ist nicht verfügbar |
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DGD0590AFU-7 | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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DMN10H220L-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.3A Pulsed drain current: 8A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±16V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMN10H220L-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.3A Pulsed drain current: 8A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±16V On-state resistance: 0.22Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1932 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220LE-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.8A Pulsed drain current: 8A Power dissipation: 1.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMN10H220LFDF-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.7A Pulsed drain current: 8.8A Power dissipation: 1W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 6.7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMN10H220LFVW-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 44A; 2.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 9A Pulsed drain current: 44A Power dissipation: 2.4W Case: PowerDI®3333-8 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 6.7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMN10H220LK3-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 4.7A; Idm: 30A; 7.5W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.7A Pulsed drain current: 30A Power dissipation: 7.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 6.7nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2467 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220LQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.3A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±16V On-state resistance: 0.25Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
auf Bestellung 2790 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220LVT-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.79A; Idm: 6.6A; 1.07W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.79A Pulsed drain current: 6.6A Power dissipation: 1.07W Case: TSOT26 Gate-source voltage: ±16V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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AP61300QZ6-7 | DIODES INCORPORATED |
![]() Description: IC: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A Type of integrated circuit: PMIC Frequency: 2.2MHz Case: SOT563 Mounting: SMD Operating temperature: -40...85°C Output voltage: 0.6...5.5V DC Output current: 3A Application: automotive industry Input voltage: 2.4...5.5V DC Efficiency: 84% Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: buck |
Produkt ist nicht verfügbar |
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DPO2036DBB-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; U-QFN2020-12; reel,tape; 2.7÷5.5VDC Application: USB port ESD protection Supply voltage: 2.7...5.5V DC Mounting: SMD Output current: 0.6A Kind of package: reel; tape Protection: anti-overvoltage OVP Case: U-QFN2020-12 Type of integrated circuit: power switch Number of channels: 4 Kind of output: N-Channel |
Produkt ist nicht verfügbar |
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74LVC2G126HD4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 2 Technology: CMOS Mounting: SMD Case: X2-DFN2010-8 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of output: 3-state Kind of package: reel; tape Family: LVC Kind of input: with Schmitt trigger |
Produkt ist nicht verfügbar |
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AP64501QSP-13 | DIODES INCORPORATED |
![]() Description: IC: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷39VDC; 5A; 85% Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Output current: 5A Mounting: SMD Case: SO8-EP Kind of package: reel; tape Operating temperature: -40...85°C Output voltage: 0.8...39V DC Application: automotive industry Input voltage: 3.8...40V DC Frequency: 510...630kHz Topology: buck Efficiency: 85% |
Produkt ist nicht verfügbar |
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B290AE-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMD; 90V; 2A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 90V Load current: 2A Semiconductor structure: single diode Capacitance: 70pF Case: SMA Kind of package: reel; tape Max. forward impulse current: 50A Max. forward voltage: 0.79V Leakage current: 0.4mA |
Produkt ist nicht verfügbar |
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DT1042-04SOQ-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS array Type of diode: TVS array |
Produkt ist nicht verfügbar |
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AZ23C5V1-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23 Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double |
auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVCE1G06W5-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverter; Ch: 1; CMOS; SMD; SOT25; 1.4÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Family: LVCE
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverter; Ch: 1; CMOS; SMD; SOT25; 1.4÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Family: LVCE
Produkt ist nicht verfügbar
74LVCE1G08SE-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC; LVCE
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.4÷5.5VDC; LVCE
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Produkt ist nicht verfügbar
74LVCE1G08W5-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.4÷5.5VDC; LVCE
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.4÷5.5VDC; LVCE
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Produkt ist nicht verfügbar
fmmt717 |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 2.5A; 625mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 2.5A
Power dissipation: 0.625W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 2.5A; 625mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 2.5A
Power dissipation: 0.625W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
SMBJ48A-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 53.3÷61.3V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 53.3÷61.3V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 4300 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
152+ | 0.47 EUR |
186+ | 0.38 EUR |
242+ | 0.3 EUR |
451+ | 0.16 EUR |
633+ | 0.11 EUR |
1000+ | 0.1 EUR |
AP22816AKCWT-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
AP22816AKEWT-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
AP22816BKBWT-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
AP22816BKEWT-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
AP22817AKBWT-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
AP22817AKEWT-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
AP22818AKBWT-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
AP22818AKCWT-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
AP22818AKEWT-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
AP22818AKWT-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
AP22818BKBWT-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
AP22818BKEWT-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
ZXGD3006E6QTA |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOT26; -3.8÷4A; Ch: 1; 40V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOT26
Output current: -3.8...4A
Number of channels: 1
Supply voltage: 40V
Mounting: SMD
Operating temperature: -55...150°C
Impulse rise time: 419ns
Pulse fall time: 467ns
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOT26; -3.8÷4A; Ch: 1; 40V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOT26
Output current: -3.8...4A
Number of channels: 1
Supply voltage: 40V
Mounting: SMD
Operating temperature: -55...150°C
Impulse rise time: 419ns
Pulse fall time: 467ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
DMPH6250SQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH6250SQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -13A; 1.62W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -13A
Power dissipation: 1.62W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SMAJ16AQ-13-F |
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Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 17.8÷19.7V; 15.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 17.8÷19.7V; 15.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
AL5817MP-13 |
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Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; MSOP8EP; 15mA; Ch: 1; 4.5÷60V
Number of channels: 1
Output current: 15mA
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: driver
Kind of package: reel; tape
Kind of integrated circuit: LED driver
Case: MSOP8EP
Operating voltage: 4.5...60V
Category: LED drivers
Description: IC: driver; LED driver; MSOP8EP; 15mA; Ch: 1; 4.5÷60V
Number of channels: 1
Output current: 15mA
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: driver
Kind of package: reel; tape
Kind of integrated circuit: LED driver
Case: MSOP8EP
Operating voltage: 4.5...60V
Produkt ist nicht verfügbar
PAM8906M1010-13 |
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Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; MSOP10; 2.1÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: MSOP10
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.1...5.5V DC
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; MSOP10; 2.1÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: MSOP10
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.1...5.5V DC
Produkt ist nicht verfügbar
PAM8906M1012-13 |
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Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; MSOP10; 2.1÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: MSOP10
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.1...5.5V DC
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; MSOP10; 2.1÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: MSOP10
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.1...5.5V DC
Produkt ist nicht verfügbar
PAM8906M1018-13 |
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Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; MSOP10; 2.1÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: MSOP10
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.1...5.5V DC
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; MSOP10; 2.1÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: MSOP10
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.1...5.5V DC
Produkt ist nicht verfügbar
DMT12H007LPS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 360A; 2.9W
Mounting: SMD
Kind of package: reel; tape
Case: PowerDI5060-8
Power dissipation: 2.9W
Drain-source voltage: 120V
Drain current: 72A
On-state resistance: 14.1mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 360A; 2.9W
Mounting: SMD
Kind of package: reel; tape
Case: PowerDI5060-8
Power dissipation: 2.9W
Drain-source voltage: 120V
Drain current: 72A
On-state resistance: 14.1mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Produkt ist nicht verfügbar
DMT12H007SPS-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 320A; 2.9W
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.9W
Polarisation: unipolar
Kind of package: reel; tape
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI5060-8
Pulsed drain current: 320A
Drain-source voltage: 120V
Drain current: 64A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 320A; 2.9W
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.9W
Polarisation: unipolar
Kind of package: reel; tape
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI5060-8
Pulsed drain current: 320A
Drain-source voltage: 120V
Drain current: 64A
Produkt ist nicht verfügbar
DMT12H060LFDF-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMT12H065LFDF-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMT12H090LFDF4-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 115V; 2.7A; Idm: 15A; 1W
Mounting: SMD
Drain-source voltage: 115V
Drain current: 2.7A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Case: X2-DFN2020-6
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 15A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 115V; 2.7A; Idm: 15A; 1W
Mounting: SMD
Drain-source voltage: 115V
Drain current: 2.7A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Case: X2-DFN2020-6
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 15A
Produkt ist nicht verfügbar
BZX84C51-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 51V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 51V
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 51V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 51V
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
auf Bestellung 3099 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1300+ | 0.056 EUR |
2040+ | 0.035 EUR |
2300+ | 0.031 EUR |
2720+ | 0.026 EUR |
2880+ | 0.025 EUR |
DGD0211CWTQ-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
DGD0215WT-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
DGD0216WT-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
DGD0227S8-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
DGD0280WT-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
DGD0503FN-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
DGD0504FN-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: WDFN3030-10
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: WDFN3030-10
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
DGD0506AFN-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A
Case: WDFN3030-10
Kind of package: reel; tape
Mounting: SMD
Output current: -2...1.5A
Type of integrated circuit: driver
Impulse rise time: 35ns
Pulse fall time: 25ns
Number of channels: 1
Kind of integrated circuit: gate driver; high-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Supply voltage: 8...14V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; -2÷1.5A
Case: WDFN3030-10
Kind of package: reel; tape
Mounting: SMD
Output current: -2...1.5A
Type of integrated circuit: driver
Impulse rise time: 35ns
Pulse fall time: 25ns
Number of channels: 1
Kind of integrated circuit: gate driver; high-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Supply voltage: 8...14V
Produkt ist nicht verfügbar
DGD0506AM10-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; MSOP10
Case: MSOP10
Kind of package: reel; tape
Mounting: SMD
Output current: -2...1.5A
Type of integrated circuit: driver
Impulse rise time: 35ns
Pulse fall time: 25ns
Number of channels: 1
Kind of integrated circuit: gate driver; high-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Supply voltage: 8...14V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; MSOP10
Case: MSOP10
Kind of package: reel; tape
Mounting: SMD
Output current: -2...1.5A
Type of integrated circuit: driver
Impulse rise time: 35ns
Pulse fall time: 25ns
Number of channels: 1
Kind of integrated circuit: gate driver; high-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Supply voltage: 8...14V
Produkt ist nicht verfügbar
DGD0507AFN-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
DGD05463FN-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
DGD05473FN-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Mounting: SMD
Case: VDFN10
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: -2.5...1.5A
Type of integrated circuit: driver
Impulse rise time: 30ns
Pulse fall time: 25ns
Number of channels: 1
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Supply voltage: 4.2...14V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Mounting: SMD
Case: VDFN10
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: -2.5...1.5A
Type of integrated circuit: driver
Impulse rise time: 30ns
Pulse fall time: 25ns
Number of channels: 1
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Supply voltage: 4.2...14V
Produkt ist nicht verfügbar
DGD05473FNQ-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Mounting: SMD
Case: U-DFN3030-10
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: -2.5...1.5A
Type of integrated circuit: driver
Impulse rise time: 30ns
Pulse fall time: 25ns
Number of channels: 1
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Supply voltage: 4.4...14V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Mounting: SMD
Case: U-DFN3030-10
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: -2.5...1.5A
Type of integrated circuit: driver
Impulse rise time: 30ns
Pulse fall time: 25ns
Number of channels: 1
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Supply voltage: 4.4...14V
Produkt ist nicht verfügbar
DGD0590AFU-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
DMN10H220L-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN10H220L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1932 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
334+ | 0.21 EUR |
400+ | 0.18 EUR |
439+ | 0.16 EUR |
556+ | 0.13 EUR |
589+ | 0.12 EUR |
DMN10H220LE-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN10H220LFDF-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.7A
Pulsed drain current: 8.8A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.7A
Pulsed drain current: 8.8A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN10H220LFVW-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 44A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 44A
Power dissipation: 2.4W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 44A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 44A
Power dissipation: 2.4W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN10H220LK3-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7A; Idm: 30A; 7.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.7A
Pulsed drain current: 30A
Power dissipation: 7.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7A; Idm: 30A; 7.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.7A
Pulsed drain current: 30A
Power dissipation: 7.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2467 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
139+ | 0.51 EUR |
347+ | 0.21 EUR |
367+ | 0.2 EUR |
DMN10H220LQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
auf Bestellung 2790 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
186+ | 0.39 EUR |
247+ | 0.29 EUR |
309+ | 0.23 EUR |
463+ | 0.15 EUR |
676+ | 0.11 EUR |
715+ | 0.1 EUR |
1000+ | 0.096 EUR |
DMN10H220LVT-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.79A; Idm: 6.6A; 1.07W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.79A
Pulsed drain current: 6.6A
Power dissipation: 1.07W
Case: TSOT26
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.79A; Idm: 6.6A; 1.07W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.79A
Pulsed drain current: 6.6A
Power dissipation: 1.07W
Case: TSOT26
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
AP61300QZ6-7 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A
Type of integrated circuit: PMIC
Frequency: 2.2MHz
Case: SOT563
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 0.6...5.5V DC
Output current: 3A
Application: automotive industry
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A
Type of integrated circuit: PMIC
Frequency: 2.2MHz
Case: SOT563
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 0.6...5.5V DC
Output current: 3A
Application: automotive industry
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Produkt ist nicht verfügbar
DPO2036DBB-7 |
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Hersteller: DIODES INCORPORATED
Category: Integrated circuits - others
Description: IC: power switch; U-QFN2020-12; reel,tape; 2.7÷5.5VDC
Application: USB port ESD protection
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Output current: 0.6A
Kind of package: reel; tape
Protection: anti-overvoltage OVP
Case: U-QFN2020-12
Type of integrated circuit: power switch
Number of channels: 4
Kind of output: N-Channel
Category: Integrated circuits - others
Description: IC: power switch; U-QFN2020-12; reel,tape; 2.7÷5.5VDC
Application: USB port ESD protection
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Output current: 0.6A
Kind of package: reel; tape
Protection: anti-overvoltage OVP
Case: U-QFN2020-12
Type of integrated circuit: power switch
Number of channels: 4
Kind of output: N-Channel
Produkt ist nicht verfügbar
74LVC2G126HD4-7 |
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Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN2010-8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVC
Kind of input: with Schmitt trigger
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN2010-8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVC
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
AP64501QSP-13 |
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Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷39VDC; 5A; 85%
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Output current: 5A
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...85°C
Output voltage: 0.8...39V DC
Application: automotive industry
Input voltage: 3.8...40V DC
Frequency: 510...630kHz
Topology: buck
Efficiency: 85%
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷39VDC; 5A; 85%
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Output current: 5A
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...85°C
Output voltage: 0.8...39V DC
Application: automotive industry
Input voltage: 3.8...40V DC
Frequency: 510...630kHz
Topology: buck
Efficiency: 85%
Produkt ist nicht verfügbar
B290AE-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 90V; 2A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 70pF
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 50A
Max. forward voltage: 0.79V
Leakage current: 0.4mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 90V; 2A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 70pF
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 50A
Max. forward voltage: 0.79V
Leakage current: 0.4mA
Produkt ist nicht verfügbar
DT1042-04SOQ-7 |
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Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Produkt ist nicht verfügbar
AZ23C5V1-7-F |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
600+ | 0.12 EUR |
700+ | 0.1 EUR |