Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75941) > Seite 1254 nach 1266
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SBRT40M80CTB | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
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ZVN3306FTA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; Idm: 3A; 0.33W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.15A Pulsed drain current: 3A Power dissipation: 0.33W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2302 Stücke: Lieferzeit 14-21 Tag (e) |
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AZ23C15-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; double,common anode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double |
auf Bestellung 5890 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP6023LFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W Mounting: SMD Case: PowerDI®3333-8 Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -55A Drain-source voltage: -60V Drain current: -6.2A On-state resistance: 25mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP6023LFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Gate charge: 53.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -55A Drain-source voltage: -60V Drain current: -8.2A On-state resistance: 33mΩ Type of transistor: P-MOSFET Power dissipation: 2.1W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP6023LFGQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W Mounting: SMD Application: automotive industry Case: PowerDI3333-8 Kind of package: reel; tape Gate charge: 53.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -55A Drain-source voltage: -60V Drain current: -8.2A On-state resistance: 33mΩ Type of transistor: P-MOSFET Power dissipation: 2.1W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP6023LFGQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W Mounting: SMD Application: automotive industry Case: PowerDI®3333-8 Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -55A Drain-source voltage: -60V Drain current: -6.2A On-state resistance: 25mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMN63D1LV-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 450mA; Idm: 1.2A; 940mW; SOT563 Case: SOT563 Mounting: SMD Power dissipation: 0.94W Polarisation: unipolar Kind of package: reel; tape Gate charge: 392pC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1.2A Drain-source voltage: 60V Drain current: 0.45A On-state resistance: 3Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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DMN63D1LV-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 450mA; Idm: 1.2A; 940mW; SOT563 Case: SOT563 Mounting: SMD Power dissipation: 0.94W Polarisation: unipolar Kind of package: reel; tape Gate charge: 392pC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1.2A Drain-source voltage: 60V Drain current: 0.45A On-state resistance: 3Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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SMAJ8.5A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 9.44÷10.4V; 27.7A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 8.5V Breakdown voltage: 9.44...10.4V Max. forward impulse current: 27.7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 10µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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APR340W6-7 | DIODES INCORPORATED |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; SOT26; 0÷22V; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Case: SOT26 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 0...22V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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APR347W6-7 | DIODES INCORPORATED |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; SOT26; 0÷22V; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Case: SOT26 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 0...22V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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AL5809-100QP1-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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AL5809-120QP1-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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AL5809-150QP1-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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AL5809-15QP1-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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AL5809-25QP1-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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AL5809-30QP1-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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AL5809-40QP1-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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AL5809-50QP1-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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AL5809-60QP1-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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AL5809-90QP1-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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D12V0H1U2LP1610-7 | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS Type of diode: TVS |
Produkt ist nicht verfügbar |
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D12V0H1U2WS-7 | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS Type of diode: TVS |
Produkt ist nicht verfügbar |
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D12V0M1U2S9-7 | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS Type of diode: TVS |
Produkt ist nicht verfügbar |
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SD12C-7 | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 360W; 13V; 15A; bidirectional; SOD323; reel,tape Type of diode: TVS Breakdown voltage: 13V Max. forward impulse current: 15A Peak pulse power dissipation: 360W Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 12V Features of semiconductor devices: ESD protection Kind of package: reel; tape Capacitance: 52.6pF |
Produkt ist nicht verfügbar |
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DGD2304S8-13 | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver Case: SO8 Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
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SMCJ40CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 23.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 23.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 1300 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN65D8L-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.54W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Power dissipation: 0.54W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 960 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN65D8LQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; Idm: 0.8A; 540mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Pulsed drain current: 0.8A Power dissipation: 0.54W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 870pC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMN65D8LQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; Idm: 0.8A; 540mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Pulsed drain current: 0.8A Power dissipation: 0.54W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 870pC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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ZXMS6004FFQ-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT23F On-state resistance: 0.6Ω Kind of package: reel; tape Supply voltage: 0...5.5V Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
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DMNH6042SPDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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ZDT749TA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 25V; 2A; 2.75W; SM8 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 2A Power dissipation: 2.75W Case: SM8 Pulsed collector current: 6A Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz |
Produkt ist nicht verfügbar |
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AP33771DKZ-13 | DIODES INCORPORATED |
Category: USB interfaces - integrated circuits Description: IC: interface; GPIO,USB 3.0; USB PD controller; 3.3÷24VDC; WQFN24 Supply voltage: 3.3...24V DC Operating temperature: -40...85°C Kind of integrated circuit: USB PD controller Mounting: SMD Case: WQFN24 Type of integrated circuit: interface Interface: GPIO; USB 3.0 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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AP33772DKZ-13 | DIODES INCORPORATED |
Category: USB interfaces - integrated circuits Description: IC: interface; GPIO,I2C,USB 3.0; USB PD controller; 3.3÷24VDC Supply voltage: 3.3...24V DC Operating temperature: -40...85°C Kind of integrated circuit: USB PD controller Mounting: SMD Case: WQFN24 Type of integrated circuit: interface Interface: GPIO; I2C; USB 3.0 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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FZT958TA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.6W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.5A Power dissipation: 1.6W Case: SOT223 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 85MHz |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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AP66200FVBW-13 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 3.8÷60VDC; Uout: 0.8÷50VDC; 2A Operating temperature: -40...125°C Frequency: 0.5MHz Output voltage: 0.8...50V DC Output current: 2A Type of integrated circuit: PMIC Input voltage: 3.8...60V DC Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: buck Mounting: SMD Case: U-QDFN4040-16SWP Type UXB |
Produkt ist nicht verfügbar |
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DESDA5V3L-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
Produkt ist nicht verfügbar |
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AP22913CN4-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Supply voltage: 2.7...5.5V DC Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch Mounting: SMD Case: X1-WLB0909-4 Output current: 2A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Active logical level: high |
Produkt ist nicht verfügbar |
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DMTH41M8SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 3.03W Mounting: SMD Drain-source voltage: 40V Drain current: 100A On-state resistance: 1.8mΩ Type of transistor: N-MOSFET Power dissipation: 3.03W Polarisation: unipolar Kind of package: reel; tape Gate charge: 79.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Case: PowerDI5060-8 |
Produkt ist nicht verfügbar |
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DMTH41M8SPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 3.03W Mounting: SMD Drain-source voltage: 40V Drain current: 100A On-state resistance: 1.8mΩ Type of transistor: N-MOSFET Power dissipation: 3.03W Polarisation: unipolar Kind of package: reel; tape Gate charge: 79.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Case: PowerDI5060-8 |
Produkt ist nicht verfügbar |
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SBR40U100CT | DIODES INCORPORATED |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SBR®; THT; 100V; 40A; TO220AB; tube Type of diode: Schottky rectifying Max. off-state voltage: 100V Max. forward voltage: 0.72V Load current: 40A Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Max. forward impulse current: 235A Kind of package: tube Technology: SBR® |
Produkt ist nicht verfügbar |
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DMP4006SPSWQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -92A; Idm: -460A; 3.4W Kind of package: reel; tape Gate charge: 162nC Kind of channel: enhanced Gate-source voltage: ±20V Case: PowerDI5060-8 Pulsed drain current: -460A Drain-source voltage: -40V Drain current: -92A On-state resistance: 7.9mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 3.4W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP4010SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252 Kind of package: reel; tape Gate charge: 91nC Kind of channel: enhanced Gate-source voltage: ±25V Case: TO252 Pulsed drain current: -100A Drain-source voltage: -40V Drain current: -12A On-state resistance: 14mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 3.3W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP4010SK3Q-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252 Kind of package: reel; tape Gate charge: 91nC Kind of channel: enhanced Gate-source voltage: ±25V Case: TO252 Pulsed drain current: -100A Drain-source voltage: -40V Drain current: -12A On-state resistance: 14mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 3.3W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP4011SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252 Kind of package: reel; tape Gate charge: 52nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO252 Pulsed drain current: -200A Drain-source voltage: -40V Drain current: -11A On-state resistance: 19mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 3.1W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP4011SK3Q-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252 Kind of package: reel; tape Gate charge: 52nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO252 Pulsed drain current: -200A Drain-source voltage: -40V Drain current: -11A On-state resistance: 19mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 3.1W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP4011SPSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -9.4A; Idm: -300A; 2.3W Kind of package: reel; tape Gate charge: 52nC Kind of channel: enhanced Gate-source voltage: ±20V Case: PowerDI5060-8 Pulsed drain current: -300A Drain-source voltage: -40V Drain current: -9.4A On-state resistance: 14mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 2.3W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP4025LK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -35A; 2.78W; TO252 Kind of package: reel; tape Gate charge: 33.7nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO252 Pulsed drain current: -35A Drain-source voltage: -40V Drain current: -6.9A On-state resistance: 45mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 2.78W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP4025LSDQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.1A; Idm: -28A; 2.14W; SO8 Kind of package: reel; tape Gate charge: 33.7nC Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 Pulsed drain current: -28A Drain-source voltage: -40V Drain current: -6.1A On-state resistance: 45mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 2.14W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP4025LSS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8 Kind of package: reel; tape Gate charge: 33.7nC Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 Pulsed drain current: -30A Drain-source voltage: -40V Drain current: -6.9A On-state resistance: 45mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 2.4W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP4025LSSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8 Kind of package: reel; tape Gate charge: 33.7nC Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 Pulsed drain current: -30A Drain-source voltage: -40V Drain current: -6.9A On-state resistance: 45mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 2.4W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP4025SFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -5.77A; Idm: -80A; 1.95W Kind of package: reel; tape Gate charge: 33.7nC Kind of channel: enhanced Gate-source voltage: ±20V Case: PowerDI3333-8 Pulsed drain current: -80A Drain-source voltage: -40V Drain current: -5.77A On-state resistance: 45mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 1.95W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP4025SFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -5.77A; Idm: -80A; 1.95W Kind of package: reel; tape Gate charge: 33.7nC Kind of channel: enhanced Gate-source voltage: ±20V Case: PowerDI3333-8 Pulsed drain current: -80A Drain-source voltage: -40V Drain current: -5.77A On-state resistance: 45mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 1.95W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP4025SFGQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8 Application: automotive industry Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Case: PowerDI®3333-8 Drain-source voltage: -40V Drain current: -5.4A On-state resistance: 45mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 0.81W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP4025SFGQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -5.4A Power dissipation: 0.81W Case: PowerDI®3333-8 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
auf Bestellung 1513 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H099SK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 20A; 22W; TO252 Mounting: SMD Drain-source voltage: 100V Drain current: 13A On-state resistance: 99mΩ Type of transistor: N-MOSFET Case: TO252 Power dissipation: 22W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A |
Produkt ist nicht verfügbar |
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SMCJ45CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 50÷55.3V; 20.6A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 45V Breakdown voltage: 50...55.3V Max. forward impulse current: 20.6A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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DMN2451UFB4Q-7B | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced |
Produkt ist nicht verfügbar |
SBRT40M80CTB |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
ZVN3306FTA |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; Idm: 3A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.15A
Pulsed drain current: 3A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; Idm: 3A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.15A
Pulsed drain current: 3A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2302 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
143+ | 0.5 EUR |
168+ | 0.43 EUR |
299+ | 0.24 EUR |
316+ | 0.23 EUR |
500+ | 0.22 EUR |
AZ23C15-7-F |
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
auf Bestellung 5890 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
460+ | 0.16 EUR |
1020+ | 0.07 EUR |
1160+ | 0.062 EUR |
1400+ | 0.051 EUR |
1480+ | 0.048 EUR |
DMP6023LFG-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W
Mounting: SMD
Case: PowerDI®3333-8
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -55A
Drain-source voltage: -60V
Drain current: -6.2A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W
Mounting: SMD
Case: PowerDI®3333-8
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -55A
Drain-source voltage: -60V
Drain current: -6.2A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP6023LFG-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Gate charge: 53.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -55A
Drain-source voltage: -60V
Drain current: -8.2A
On-state resistance: 33mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Gate charge: 53.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -55A
Drain-source voltage: -60V
Drain current: -8.2A
On-state resistance: 33mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP6023LFGQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W
Mounting: SMD
Application: automotive industry
Case: PowerDI3333-8
Kind of package: reel; tape
Gate charge: 53.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -55A
Drain-source voltage: -60V
Drain current: -8.2A
On-state resistance: 33mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W
Mounting: SMD
Application: automotive industry
Case: PowerDI3333-8
Kind of package: reel; tape
Gate charge: 53.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -55A
Drain-source voltage: -60V
Drain current: -8.2A
On-state resistance: 33mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP6023LFGQ-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W
Mounting: SMD
Application: automotive industry
Case: PowerDI®3333-8
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -55A
Drain-source voltage: -60V
Drain current: -6.2A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W
Mounting: SMD
Application: automotive industry
Case: PowerDI®3333-8
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -55A
Drain-source voltage: -60V
Drain current: -6.2A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMN63D1LV-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 450mA; Idm: 1.2A; 940mW; SOT563
Case: SOT563
Mounting: SMD
Power dissipation: 0.94W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 392pC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Drain-source voltage: 60V
Drain current: 0.45A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 450mA; Idm: 1.2A; 940mW; SOT563
Case: SOT563
Mounting: SMD
Power dissipation: 0.94W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 392pC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Drain-source voltage: 60V
Drain current: 0.45A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMN63D1LV-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 450mA; Idm: 1.2A; 940mW; SOT563
Case: SOT563
Mounting: SMD
Power dissipation: 0.94W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 392pC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Drain-source voltage: 60V
Drain current: 0.45A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 450mA; Idm: 1.2A; 940mW; SOT563
Case: SOT563
Mounting: SMD
Power dissipation: 0.94W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 392pC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Drain-source voltage: 60V
Drain current: 0.45A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
SMAJ8.5A-13-F |
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 9.44÷10.4V; 27.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.4V
Max. forward impulse current: 27.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 9.44÷10.4V; 27.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.4V
Max. forward impulse current: 27.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
APR340W6-7 |
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT26; 0÷22V; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SOT26
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 0...22V
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT26; 0÷22V; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SOT26
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 0...22V
Kind of package: reel; tape
Produkt ist nicht verfügbar
APR347W6-7 |
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT26; 0÷22V; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SOT26
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 0...22V
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT26; 0÷22V; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SOT26
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 0...22V
Kind of package: reel; tape
Produkt ist nicht verfügbar
AL5809-100QP1-7 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
AL5809-120QP1-7 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
AL5809-150QP1-7 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
AL5809-15QP1-7 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
AL5809-25QP1-7 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
AL5809-30QP1-7 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
AL5809-40QP1-7 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
AL5809-50QP1-7 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
AL5809-60QP1-7 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
AL5809-90QP1-7 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
D12V0H1U2LP1610-7 |
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
Produkt ist nicht verfügbar
D12V0H1U2WS-7 |
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
Produkt ist nicht verfügbar
D12V0M1U2S9-7 |
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
Produkt ist nicht verfügbar
SD12C-7 |
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 360W; 13V; 15A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Breakdown voltage: 13V
Max. forward impulse current: 15A
Peak pulse power dissipation: 360W
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Capacitance: 52.6pF
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 360W; 13V; 15A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Breakdown voltage: 13V
Max. forward impulse current: 15A
Peak pulse power dissipation: 360W
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Capacitance: 52.6pF
Produkt ist nicht verfügbar
DGD2304S8-13 |
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
SMCJ40CA-13-F |
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 23.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 23.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 23.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 23.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1300 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
148+ | 0.49 EUR |
167+ | 0.43 EUR |
325+ | 0.22 EUR |
344+ | 0.21 EUR |
DMN65D8L-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.54W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.54W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
480+ | 0.15 EUR |
960+ | 0.074 EUR |
DMN65D8LQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; Idm: 0.8A; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Pulsed drain current: 0.8A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 870pC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; Idm: 0.8A; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Pulsed drain current: 0.8A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 870pC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN65D8LQ-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; Idm: 0.8A; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Pulsed drain current: 0.8A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 870pC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; Idm: 0.8A; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Pulsed drain current: 0.8A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 870pC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
ZXMS6004FFQ-7 |
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT23F
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V
Operating temperature: -40...125°C
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT23F
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
DMNH6042SPDQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
ZDT749TA |
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 2A; 2.75W; SM8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 2A; 2.75W; SM8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
AP33771DKZ-13 |
Hersteller: DIODES INCORPORATED
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO,USB 3.0; USB PD controller; 3.3÷24VDC; WQFN24
Supply voltage: 3.3...24V DC
Operating temperature: -40...85°C
Kind of integrated circuit: USB PD controller
Mounting: SMD
Case: WQFN24
Type of integrated circuit: interface
Interface: GPIO; USB 3.0
Kind of package: reel; tape
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO,USB 3.0; USB PD controller; 3.3÷24VDC; WQFN24
Supply voltage: 3.3...24V DC
Operating temperature: -40...85°C
Kind of integrated circuit: USB PD controller
Mounting: SMD
Case: WQFN24
Type of integrated circuit: interface
Interface: GPIO; USB 3.0
Kind of package: reel; tape
Produkt ist nicht verfügbar
AP33772DKZ-13 |
Hersteller: DIODES INCORPORATED
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO,I2C,USB 3.0; USB PD controller; 3.3÷24VDC
Supply voltage: 3.3...24V DC
Operating temperature: -40...85°C
Kind of integrated circuit: USB PD controller
Mounting: SMD
Case: WQFN24
Type of integrated circuit: interface
Interface: GPIO; I2C; USB 3.0
Kind of package: reel; tape
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO,I2C,USB 3.0; USB PD controller; 3.3÷24VDC
Supply voltage: 3.3...24V DC
Operating temperature: -40...85°C
Kind of integrated circuit: USB PD controller
Mounting: SMD
Case: WQFN24
Type of integrated circuit: interface
Interface: GPIO; I2C; USB 3.0
Kind of package: reel; tape
Produkt ist nicht verfügbar
FZT958TA |
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
68+ | 1.06 EUR |
125+ | 0.57 EUR |
142+ | 0.51 EUR |
158+ | 0.45 EUR |
167+ | 0.43 EUR |
AP66200FVBW-13 |
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.8÷60VDC; Uout: 0.8÷50VDC; 2A
Operating temperature: -40...125°C
Frequency: 0.5MHz
Output voltage: 0.8...50V DC
Output current: 2A
Type of integrated circuit: PMIC
Input voltage: 3.8...60V DC
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Case: U-QDFN4040-16SWP Type UXB
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.8÷60VDC; Uout: 0.8÷50VDC; 2A
Operating temperature: -40...125°C
Frequency: 0.5MHz
Output voltage: 0.8...50V DC
Output current: 2A
Type of integrated circuit: PMIC
Input voltage: 3.8...60V DC
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Case: U-QDFN4040-16SWP Type UXB
Produkt ist nicht verfügbar
DESDA5V3L-7 |
Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Produkt ist nicht verfügbar
AP22913CN4-7 |
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: X1-WLB0909-4
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: X1-WLB0909-4
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Produkt ist nicht verfügbar
DMTH41M8SPS-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 3.03W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.03W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 79.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: PowerDI5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 3.03W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.03W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 79.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: PowerDI5060-8
Produkt ist nicht verfügbar
DMTH41M8SPSQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 3.03W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.03W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 79.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: PowerDI5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 3.03W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.03W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 79.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: PowerDI5060-8
Produkt ist nicht verfügbar
SBR40U100CT |
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 100V; 40A; TO220AB; tube
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward voltage: 0.72V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Max. forward impulse current: 235A
Kind of package: tube
Technology: SBR®
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 100V; 40A; TO220AB; tube
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward voltage: 0.72V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Max. forward impulse current: 235A
Kind of package: tube
Technology: SBR®
Produkt ist nicht verfügbar
DMP4006SPSWQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -92A; Idm: -460A; 3.4W
Kind of package: reel; tape
Gate charge: 162nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI5060-8
Pulsed drain current: -460A
Drain-source voltage: -40V
Drain current: -92A
On-state resistance: 7.9mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.4W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -92A; Idm: -460A; 3.4W
Kind of package: reel; tape
Gate charge: 162nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI5060-8
Pulsed drain current: -460A
Drain-source voltage: -40V
Drain current: -92A
On-state resistance: 7.9mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.4W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4010SK3-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252
Kind of package: reel; tape
Gate charge: 91nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO252
Pulsed drain current: -100A
Drain-source voltage: -40V
Drain current: -12A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.3W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252
Kind of package: reel; tape
Gate charge: 91nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO252
Pulsed drain current: -100A
Drain-source voltage: -40V
Drain current: -12A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.3W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4010SK3Q-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252
Kind of package: reel; tape
Gate charge: 91nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO252
Pulsed drain current: -100A
Drain-source voltage: -40V
Drain current: -12A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.3W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252
Kind of package: reel; tape
Gate charge: 91nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO252
Pulsed drain current: -100A
Drain-source voltage: -40V
Drain current: -12A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.3W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4011SK3-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252
Kind of package: reel; tape
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252
Pulsed drain current: -200A
Drain-source voltage: -40V
Drain current: -11A
On-state resistance: 19mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.1W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252
Kind of package: reel; tape
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252
Pulsed drain current: -200A
Drain-source voltage: -40V
Drain current: -11A
On-state resistance: 19mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.1W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4011SK3Q-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252
Kind of package: reel; tape
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252
Pulsed drain current: -200A
Drain-source voltage: -40V
Drain current: -11A
On-state resistance: 19mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.1W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252
Kind of package: reel; tape
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252
Pulsed drain current: -200A
Drain-source voltage: -40V
Drain current: -11A
On-state resistance: 19mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.1W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4011SPSQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9.4A; Idm: -300A; 2.3W
Kind of package: reel; tape
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI5060-8
Pulsed drain current: -300A
Drain-source voltage: -40V
Drain current: -9.4A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.3W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9.4A; Idm: -300A; 2.3W
Kind of package: reel; tape
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI5060-8
Pulsed drain current: -300A
Drain-source voltage: -40V
Drain current: -9.4A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.3W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4025LK3-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -35A; 2.78W; TO252
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252
Pulsed drain current: -35A
Drain-source voltage: -40V
Drain current: -6.9A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.78W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -35A; 2.78W; TO252
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252
Pulsed drain current: -35A
Drain-source voltage: -40V
Drain current: -6.9A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.78W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4025LSDQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.1A; Idm: -28A; 2.14W; SO8
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Pulsed drain current: -28A
Drain-source voltage: -40V
Drain current: -6.1A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.14W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.1A; Idm: -28A; 2.14W; SO8
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Pulsed drain current: -28A
Drain-source voltage: -40V
Drain current: -6.1A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.14W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4025LSS-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Pulsed drain current: -30A
Drain-source voltage: -40V
Drain current: -6.9A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Pulsed drain current: -30A
Drain-source voltage: -40V
Drain current: -6.9A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4025LSSQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Pulsed drain current: -30A
Drain-source voltage: -40V
Drain current: -6.9A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Pulsed drain current: -30A
Drain-source voltage: -40V
Drain current: -6.9A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4025SFG-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.77A; Idm: -80A; 1.95W
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI3333-8
Pulsed drain current: -80A
Drain-source voltage: -40V
Drain current: -5.77A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 1.95W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.77A; Idm: -80A; 1.95W
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI3333-8
Pulsed drain current: -80A
Drain-source voltage: -40V
Drain current: -5.77A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 1.95W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4025SFG-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.77A; Idm: -80A; 1.95W
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI3333-8
Pulsed drain current: -80A
Drain-source voltage: -40V
Drain current: -5.77A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 1.95W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.77A; Idm: -80A; 1.95W
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI3333-8
Pulsed drain current: -80A
Drain-source voltage: -40V
Drain current: -5.77A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 1.95W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4025SFGQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8
Application: automotive industry
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI®3333-8
Drain-source voltage: -40V
Drain current: -5.4A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 0.81W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8
Application: automotive industry
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI®3333-8
Drain-source voltage: -40V
Drain current: -5.4A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 0.81W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP4025SFGQ-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.4A
Power dissipation: 0.81W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; 0.81W; PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.4A
Power dissipation: 0.81W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
auf Bestellung 1513 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
64+ | 1.13 EUR |
169+ | 0.42 EUR |
191+ | 0.37 EUR |
221+ | 0.32 EUR |
233+ | 0.31 EUR |
DMN10H099SK3-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 20A; 22W; TO252
Mounting: SMD
Drain-source voltage: 100V
Drain current: 13A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: TO252
Power dissipation: 22W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 20A; 22W; TO252
Mounting: SMD
Drain-source voltage: 100V
Drain current: 13A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: TO252
Power dissipation: 22W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Produkt ist nicht verfügbar
SMCJ45CA-13-F |
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 50÷55.3V; 20.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 20.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 50÷55.3V; 20.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 20.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
DMN2451UFB4Q-7B |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Produkt ist nicht verfügbar