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74AVCH1T45FX4-7 DIODES INCORPORATED 74AVCH1T45.pdf Category: Level translators
Description: IC: digital; 1bit,transceiver,translator; Ch: 1; CMOS; 1.2÷3.6VDC
Supply voltage: 1.2...3.6V DC
Operating temperature: -40...150°C
Case: X2-DFN1409-6
Mounting: SMD
Technology: CMOS
Kind of integrated circuit: 1bit; transceiver; translator
Kind of output: 3-state
Family: AVCH
Kind of package: reel; tape
Number of channels: 1
Type of integrated circuit: digital
Produkt ist nicht verfügbar
DMPH6050SFGQ-13 DIODES INCORPORATED DMPH6050SFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.2A; Idm: -32A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.2A
Pulsed drain current: -32A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH6050SFGQ-7 DIODES INCORPORATED DMPH6050SFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.2A; Idm: -32A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.2A
Pulsed drain current: -32A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH6050SPD-13 DIODES INCORPORATED DMPH6050SPD.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; Idm: -40A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.4A
Pulsed drain current: -40A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH6050SPDQ-13 DIODES INCORPORATED DMPH6050SPDQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; Idm: -40A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.4A
Pulsed drain current: -40A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN67D7L-13 DMN67D7L-13 DIODES INCORPORATED DMN67D7L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150mA; Idm: 0.8A; 570mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.15A
Pulsed drain current: 0.8A
Power dissipation: 570mW
Case: SOT23
Gate-source voltage: ±40V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 821pC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN67D7L-7 DMN67D7L-7 DIODES INCORPORATED DMN67D7L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150mA; Idm: 0.8A; 340mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.15A
Pulsed drain current: 0.8A
Power dissipation: 0.34W
Case: SOT23-3
Gate-source voltage: ±40V
On-state resistance: 7.5Ω
Mounting: SMD
Gate charge: 821pC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DDTB123YC-7-F DDTB123YC-7-F DIODES INCORPORATED DDTB_XXXX_C.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
DMTH45M5LPSWQ-13 DIODES INCORPORATED DMTH45M5LPSWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMTH6016LPSQ-13 DIODES INCORPORATED DMTH6016LPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMTH10H032LPSWQ-13 DIODES INCORPORATED DMTH10H032LPSWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMTH15H017LPSWQ-13 DIODES INCORPORATED DMTH15H017LPSWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
SBRT05U20LPS-7B DIODES INCORPORATED SBRT05U20LPS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; Trench SBR®; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Case: X2-DFN1006-2
Kind of package: reel; tape
Leakage current: 11µA
Max. forward impulse current: 10A
Produkt ist nicht verfügbar
SBRT05U20LPSQ-7B DIODES INCORPORATED SBRT05U20LPSQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; Trench SBR®; SMD; 20V; 0.5A; 6ns
Type of diode: Schottky rectifying
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Case: X2-DFN1006-2
Kind of package: reel; tape
Leakage current: 11µA
Max. forward impulse current: 10A
Produkt ist nicht verfügbar
DMP6018LPS-13 DIODES INCORPORATED DMP6018LPS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: -60V
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -240A
On-state resistance: 26mΩ
Type of transistor: P-MOSFET
Drain current: -48A
Produkt ist nicht verfügbar
DMP6018LPSQ-13 DIODES INCORPORATED DMP6018LPSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W
Mounting: SMD
Application: automotive industry
Case: PowerDI5060-8
Drain-source voltage: -60V
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -240A
On-state resistance: 26mΩ
Type of transistor: P-MOSFET
Drain current: -48A
Produkt ist nicht verfügbar
DMT32M5LPS-13 DIODES INCORPORATED DMT32M5LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 3.2W
On-state resistance: 3mΩ
Polarisation: unipolar
Drain current: 120A
Drain-source voltage: 30V
Gate charge: 68nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 350A
Produkt ist nicht verfügbar
DMTH8008LPS-13 DIODES INCORPORATED DMTH8008LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 64A; Idm: 360A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 64A
Pulsed drain current: 360A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 41.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMTH8008LPSQ-13 DIODES INCORPORATED DMTH8008LPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 64A; Idm: 360A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 64A
Pulsed drain current: 360A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 41.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
DMP3012LPS-13 DIODES INCORPORATED DMP3012LPS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10.5A; Idm: -100A; 2.36W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 2.36W
On-state resistance: 12mΩ
Polarisation: unipolar
Drain current: -10.5A
Drain-source voltage: -30V
Gate charge: 139nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Pulsed drain current: -100A
Produkt ist nicht verfügbar
ZTX451 ZTX451 DIODES INCORPORATED ZTX450.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 150MHz
auf Bestellung 3977 Stücke:
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99+0.73 EUR
132+ 0.54 EUR
147+ 0.49 EUR
192+ 0.37 EUR
203+ 0.35 EUR
Mindestbestellmenge: 99
SMAJ90A-13-F SMAJ90A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 100÷111V; 2.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 360 Stücke:
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360+ 0.2 EUR
Mindestbestellmenge: 320
SMAJ90CA-13-F SMAJ90CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 100÷111V; 2.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 2.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
BAT54BRW-7-F BAT54BRW-7-F DIODES INCORPORATED BAT54TW_ADW_CDW_SDW_BRW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.3A; SOT363; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series x2
Case: SOT363
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
auf Bestellung 1868 Stücke:
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129+0.56 EUR
167+ 0.43 EUR
305+ 0.23 EUR
323+ 0.22 EUR
Mindestbestellmenge: 129
SBR10E45P5-7 DIODES INCORPORATED SBR10E45P5.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 45V; 10A; PowerDI®5; Ufmax: 0.42V; Ifsm: 275A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: PowerDI®5
Kind of package: reel; tape
Max. forward impulse current: 275A
Max. forward voltage: 0.42V
Leakage current: 50µA
Produkt ist nicht verfügbar
SBR10U200CTB DIODES INCORPORATED SBR10U200.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 200V; 10A; D2PAK; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.88V
Produkt ist nicht verfügbar
SBR10U200P5-13 DIODES INCORPORATED SBR10U200P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 200V; 10A; PowerDI®5
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Case: PowerDI®5
Kind of package: reel; tape
Max. forward impulse current: 180A
Max. forward voltage: 0.88V
Leakage current: 0.1mA
Produkt ist nicht verfügbar
SBR10U200P5Q-13 DIODES INCORPORATED SBR10U200P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 200V; 10A; 19ns; PowerDI®5
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Reverse recovery time: 19ns
Semiconductor structure: single diode
Case: PowerDI®5
Kind of package: reel; tape
Max. forward impulse current: 180A
Max. forward voltage: 0.88V
Leakage current: 10µA
Produkt ist nicht verfügbar
SBR10U60CTFP SBR10U60CTFP DIODES INCORPORATED SBR10U60.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 60V; 10A; TO220FP; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.62V
Produkt ist nicht verfügbar
AP2113KTR-G1 AP2113KTR-G1 DIODES INCORPORATED AP2113.pdf Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.6÷5.3V; 0.6A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 1.6...5.3V
Output current: 0.6A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±3%
Number of channels: 1
Application: fans; motors
Input voltage: 2.5...5.5V
Produkt ist nicht verfügbar
DMT6018LDR-13 DIODES INCORPORATED DMT6018LDR.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.1A
Pulsed drain current: 50A
Power dissipation: 1.2W
Case: V-DFN3030-8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMT6018LDR-7 DIODES INCORPORATED DMT6018LDR.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.1A
Pulsed drain current: 50A
Power dissipation: 1.2W
Case: V-DFN3030-8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
AP1507-D5-13
+1
 		AP1507-D5-13 DIODES INCORPORATED AP1507x-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷22VDC; Uout: 1.23÷18VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...22V DC
Output voltage: 1.23...18V DC
Output current: 3A
Case: TO252-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 74%
auf Bestellung 2604 Stücke:
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120+ 0.6 EUR
137+ 0.52 EUR
152+ 0.47 EUR
157+ 0.46 EUR
500+ 0.44 EUR
Mindestbestellmenge: 70
DXTN3C60PSQ-13 DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 2.5W; PowerDI®5060-8
Collector-emitter voltage: 60V
Collector current: 3A
Pulsed collector current: 8A
Type of transistor: NPN
Power dissipation: 2.5W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: PowerDI®5060-8
Frequency: 140MHz
Produkt ist nicht verfügbar
74LVC1G58FW4-7 DIODES INCORPORATED 74LVC1G58.pdf Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1010-6
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Produkt ist nicht verfügbar
74LVC1G58FZ4-7 DIODES INCORPORATED 74LVC1G58.pdf Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1410-6
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Produkt ist nicht verfügbar
74LVC1G58W6-7 DIODES INCORPORATED 74LVC1G58.pdf Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Produkt ist nicht verfügbar
FZT491TA FZT491TA DIODES INCORPORATED FZT491.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 1013 Stücke:
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121+0.59 EUR
135+ 0.53 EUR
152+ 0.47 EUR
175+ 0.41 EUR
185+ 0.39 EUR
Mindestbestellmenge: 121
DMT68M8LFV-7 DIODES INCORPORATED DMT68M8LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43.3A; Idm: 210A; 2.7W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Drain current: 43.3A
Drain-source voltage: 60V
Power dissipation: 2.7W
Polarisation: unipolar
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 210A
On-state resistance: 13.3mΩ
Produkt ist nicht verfügbar
DMT68M8LPS-13 DIODES INCORPORATED DMT68M8LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.2A; Idm: 270A; 2.4W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Drain current: 11.2A
Drain-source voltage: 60V
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 270A
On-state resistance: 10.8mΩ
Produkt ist nicht verfügbar
DMT68M8LSS-13 DMT68M8LSS-13 DIODES INCORPORATED DMT68M8LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.7A; Idm: 100A; 1.9W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Drain current: 9.7A
Drain-source voltage: 60V
Power dissipation: 1.9W
Polarisation: unipolar
Gate charge: 31.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 100A
On-state resistance: 12mΩ
Produkt ist nicht verfügbar
74LVC1G58DW-7 74LVC1G58DW-7 DIODES INCORPORATED 74LVC1G58.pdf Category: Gates, inverters
Description: IC: digital; configurable,multiple-function; IN: 3; SMD; SOT363
Type of integrated circuit: digital
Kind of gate: configurable; multiple-function
Number of inputs: 3
Mounting: SMD
Case: SOT363
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 200µA
Kind of input: with Schmitt trigger
Kind of output: push-pull
Family: LVC
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
Mindestbestellmenge: 295
S3A-13-F S3A-13-F DIODES INCORPORATED S3x_S3xB.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 3A; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.25 EUR
310+ 0.23 EUR
390+ 0.18 EUR
410+ 0.17 EUR
Mindestbestellmenge: 295
DESD1CAN2SOQ-7 DIODES INCORPORATED DESD1CAN2SOQ.pdf Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Produkt ist nicht verfügbar
DMN24H11DS-7 DMN24H11DS-7 DIODES INCORPORATED DMN24H11DS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 0.8A
Case: SOT23
Drain-source voltage: 240V
Drain current: 0.22A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 3.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
DMN24H11DSQ-13 DMN24H11DSQ-13 DIODES INCORPORATED DMN24H11DSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Pulsed drain current: 0.8A
Case: SOT23
Drain-source voltage: 240V
Drain current: 0.22A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 3.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
DMN24H11DSQ-7 DMN24H11DSQ-7 DIODES INCORPORATED DMN24H11DSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Pulsed drain current: 0.8A
Case: SOT23
Drain-source voltage: 240V
Drain current: 0.22A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 3.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
PDS1240CTL-13 DIODES INCORPORATED PDS1240CTL.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 6Ax2; PowerDI®5; reel,tape
Mounting: SMD
Case: PowerDI®5
Max. forward impulse current: 150A
Leakage current: 20mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 0.52V
Load current: 6A x2
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
AP7383-33FDC-7 DIODES INCORPORATED AP7383.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; uDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3.3V
Output current: 0.15A
Case: uDFN6
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...30V
Manufacturer series: AP7383
Produkt ist nicht verfügbar
AP7383-33W5-7 AP7383-33W5-7 DIODES INCORPORATED AP7383.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...30V
Manufacturer series: AP7383
Produkt ist nicht verfügbar
AP7383-33WR-7 AP7383-33WR-7 DIODES INCORPORATED AP7383.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...30V
Manufacturer series: AP7383
Produkt ist nicht verfügbar
AP7383-33Y-13 AP7383-33Y-13 DIODES INCORPORATED AP7383.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...30V
Manufacturer series: AP7383
Produkt ist nicht verfügbar
AP7115-28WG-7 AP7115-28WG-7 DIODES INCORPORATED AP7115_Sept2017_DS.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT25; SMD
Operating temperature: -40...85°C
Manufacturer series: AP7115
Case: SOT25
Kind of package: reel; tape
Output voltage: 2.8V
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...5.5V
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Produkt ist nicht verfügbar
AP7115-30WG-7 AP7115-30WG-7 DIODES INCORPORATED AP7115_Sept2017_DS.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; SOT25; SMD
Operating temperature: -40...85°C
Manufacturer series: AP7115
Case: SOT25
Kind of package: reel; tape
Output voltage: 3V
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...5.5V
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Produkt ist nicht verfügbar
AP7115-33WG-7 AP7115-33WG-7 DIODES INCORPORATED AP7115_Sept2017_DS.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT25; SMD
Operating temperature: -40...85°C
Manufacturer series: AP7115
Case: SOT25
Kind of package: reel; tape
Output voltage: 3.3V
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...5.5V
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Produkt ist nicht verfügbar
AP2115R5-1.2TRG1 AP2115R5-1.2TRG1 DIODES INCORPORATED AP2115.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
AP2115R5-2.5TRG1 AP2115R5-2.5TRG1 DIODES INCORPORATED AP2115.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
AP2115R5-3.3TRG1 AP2115R5-3.3TRG1 DIODES INCORPORATED AP2115.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
AP2115R5A-2.5TRG1 AP2115R5A-2.5TRG1 DIODES INCORPORATED AP2115.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
ZXMD63N03XTA ZXMD63N03XTA DIODES INCORPORATED ZXMD63N03X.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 1.9A; 1.25W; MSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.9A
Power dissipation: 1.25W
Case: MSOP8
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
74AVCH1T45FX4-7 74AVCH1T45.pdf
Hersteller: DIODES INCORPORATED
Category: Level translators
Description: IC: digital; 1bit,transceiver,translator; Ch: 1; CMOS; 1.2÷3.6VDC
Supply voltage: 1.2...3.6V DC
Operating temperature: -40...150°C
Case: X2-DFN1409-6
Mounting: SMD
Technology: CMOS
Kind of integrated circuit: 1bit; transceiver; translator
Kind of output: 3-state
Family: AVCH
Kind of package: reel; tape
Number of channels: 1
Type of integrated circuit: digital
Produkt ist nicht verfügbar
DMPH6050SFGQ-13 DMPH6050SFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.2A; Idm: -32A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.2A
Pulsed drain current: -32A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH6050SFGQ-7 DMPH6050SFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.2A; Idm: -32A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.2A
Pulsed drain current: -32A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH6050SPD-13 DMPH6050SPD.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; Idm: -40A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.4A
Pulsed drain current: -40A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMPH6050SPDQ-13 DMPH6050SPDQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.4A; Idm: -40A; 2.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.4A
Pulsed drain current: -40A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN67D7L-13 DMN67D7L.pdf
DMN67D7L-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150mA; Idm: 0.8A; 570mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.15A
Pulsed drain current: 0.8A
Power dissipation: 570mW
Case: SOT23
Gate-source voltage: ±40V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 821pC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN67D7L-7 DMN67D7L.pdf
DMN67D7L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150mA; Idm: 0.8A; 340mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.15A
Pulsed drain current: 0.8A
Power dissipation: 0.34W
Case: SOT23-3
Gate-source voltage: ±40V
On-state resistance: 7.5Ω
Mounting: SMD
Gate charge: 821pC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DDTB123YC-7-F DDTB_XXXX_C.pdf
DDTB123YC-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
DMTH45M5LPSWQ-13 DMTH45M5LPSWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMTH6016LPSQ-13 DMTH6016LPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMTH10H032LPSWQ-13 DMTH10H032LPSWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMTH15H017LPSWQ-13 DMTH15H017LPSWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
SBRT05U20LPS-7B SBRT05U20LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; Trench SBR®; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Case: X2-DFN1006-2
Kind of package: reel; tape
Leakage current: 11µA
Max. forward impulse current: 10A
Produkt ist nicht verfügbar
SBRT05U20LPSQ-7B SBRT05U20LPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; Trench SBR®; SMD; 20V; 0.5A; 6ns
Type of diode: Schottky rectifying
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Case: X2-DFN1006-2
Kind of package: reel; tape
Leakage current: 11µA
Max. forward impulse current: 10A
Produkt ist nicht verfügbar
DMP6018LPS-13 DMP6018LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: -60V
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -240A
On-state resistance: 26mΩ
Type of transistor: P-MOSFET
Drain current: -48A
Produkt ist nicht verfügbar
DMP6018LPSQ-13 DMP6018LPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W
Mounting: SMD
Application: automotive industry
Case: PowerDI5060-8
Drain-source voltage: -60V
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -240A
On-state resistance: 26mΩ
Type of transistor: P-MOSFET
Drain current: -48A
Produkt ist nicht verfügbar
DMT32M5LPS-13 DMT32M5LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 3.2W
On-state resistance: 3mΩ
Polarisation: unipolar
Drain current: 120A
Drain-source voltage: 30V
Gate charge: 68nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 350A
Produkt ist nicht verfügbar
DMTH8008LPS-13 DMTH8008LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 64A; Idm: 360A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 64A
Pulsed drain current: 360A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 41.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMTH8008LPSQ-13 DMTH8008LPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 64A; Idm: 360A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 64A
Pulsed drain current: 360A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 41.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
DMP3012LPS-13 DMP3012LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10.5A; Idm: -100A; 2.36W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 2.36W
On-state resistance: 12mΩ
Polarisation: unipolar
Drain current: -10.5A
Drain-source voltage: -30V
Gate charge: 139nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Pulsed drain current: -100A
Produkt ist nicht verfügbar
ZTX451 ZTX450.pdf
ZTX451
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 150MHz
auf Bestellung 3977 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
99+0.73 EUR
132+ 0.54 EUR
147+ 0.49 EUR
192+ 0.37 EUR
203+ 0.35 EUR
Mindestbestellmenge: 99
SMAJ90A-13-F SMAJ_ser.pdf
SMAJ90A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 100÷111V; 2.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 360 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
320+0.23 EUR
360+ 0.2 EUR
Mindestbestellmenge: 320
SMAJ90CA-13-F SMAJ_ser.pdf
SMAJ90CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 100÷111V; 2.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 2.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
BAT54BRW-7-F BAT54TW_ADW_CDW_SDW_BRW.pdf
BAT54BRW-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.3A; SOT363; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series x2
Case: SOT363
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
auf Bestellung 1868 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
129+0.56 EUR
167+ 0.43 EUR
305+ 0.23 EUR
323+ 0.22 EUR
Mindestbestellmenge: 129
SBR10E45P5-7 SBR10E45P5.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 45V; 10A; PowerDI®5; Ufmax: 0.42V; Ifsm: 275A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: PowerDI®5
Kind of package: reel; tape
Max. forward impulse current: 275A
Max. forward voltage: 0.42V
Leakage current: 50µA
Produkt ist nicht verfügbar
SBR10U200CTB SBR10U200.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 200V; 10A; D2PAK; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.88V
Produkt ist nicht verfügbar
SBR10U200P5-13 SBR10U200P5.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 200V; 10A; PowerDI®5
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Case: PowerDI®5
Kind of package: reel; tape
Max. forward impulse current: 180A
Max. forward voltage: 0.88V
Leakage current: 0.1mA
Produkt ist nicht verfügbar
SBR10U200P5Q-13 SBR10U200P5.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 200V; 10A; 19ns; PowerDI®5
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Reverse recovery time: 19ns
Semiconductor structure: single diode
Case: PowerDI®5
Kind of package: reel; tape
Max. forward impulse current: 180A
Max. forward voltage: 0.88V
Leakage current: 10µA
Produkt ist nicht verfügbar
SBR10U60CTFP SBR10U60.pdf
SBR10U60CTFP
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 60V; 10A; TO220FP; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.62V
Produkt ist nicht verfügbar
AP2113KTR-G1 AP2113.pdf
AP2113KTR-G1
Hersteller: DIODES INCORPORATED
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.6÷5.3V; 0.6A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 1.6...5.3V
Output current: 0.6A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±3%
Number of channels: 1
Application: fans; motors
Input voltage: 2.5...5.5V
Produkt ist nicht verfügbar
DMT6018LDR-13 DMT6018LDR.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.1A
Pulsed drain current: 50A
Power dissipation: 1.2W
Case: V-DFN3030-8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMT6018LDR-7 DMT6018LDR.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 50A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.1A
Pulsed drain current: 50A
Power dissipation: 1.2W
Case: V-DFN3030-8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
AP1507-D5-13 AP1507x-DTE.pdf
AP1507-D5-13
+1
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷22VDC; Uout: 1.23÷18VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...22V DC
Output voltage: 1.23...18V DC
Output current: 3A
Case: TO252-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 74%
auf Bestellung 2604 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
70+1.03 EUR
120+ 0.6 EUR
137+ 0.52 EUR
152+ 0.47 EUR
157+ 0.46 EUR
500+ 0.44 EUR
Mindestbestellmenge: 70
DXTN3C60PSQ-13
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 2.5W; PowerDI®5060-8
Collector-emitter voltage: 60V
Collector current: 3A
Pulsed collector current: 8A
Type of transistor: NPN
Power dissipation: 2.5W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: PowerDI®5060-8
Frequency: 140MHz
Produkt ist nicht verfügbar
74LVC1G58FW4-7 74LVC1G58.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1010-6
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Produkt ist nicht verfügbar
74LVC1G58FZ4-7 74LVC1G58.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1410-6
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Produkt ist nicht verfügbar
74LVC1G58W6-7 74LVC1G58.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Produkt ist nicht verfügbar
FZT491TA FZT491.pdf
FZT491TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 1013 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
121+0.59 EUR
135+ 0.53 EUR
152+ 0.47 EUR
175+ 0.41 EUR
185+ 0.39 EUR
Mindestbestellmenge: 121
DMT68M8LFV-7 DMT68M8LFV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43.3A; Idm: 210A; 2.7W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Drain current: 43.3A
Drain-source voltage: 60V
Power dissipation: 2.7W
Polarisation: unipolar
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 210A
On-state resistance: 13.3mΩ
Produkt ist nicht verfügbar
DMT68M8LPS-13 DMT68M8LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.2A; Idm: 270A; 2.4W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Drain current: 11.2A
Drain-source voltage: 60V
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 270A
On-state resistance: 10.8mΩ
Produkt ist nicht verfügbar
DMT68M8LSS-13 DMT68M8LSS.pdf
DMT68M8LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.7A; Idm: 100A; 1.9W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Drain current: 9.7A
Drain-source voltage: 60V
Power dissipation: 1.9W
Polarisation: unipolar
Gate charge: 31.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 100A
On-state resistance: 12mΩ
Produkt ist nicht verfügbar
74LVC1G58DW-7 74LVC1G58.pdf
74LVC1G58DW-7
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; configurable,multiple-function; IN: 3; SMD; SOT363
Type of integrated circuit: digital
Kind of gate: configurable; multiple-function
Number of inputs: 3
Mounting: SMD
Case: SOT363
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 200µA
Kind of input: with Schmitt trigger
Kind of output: push-pull
Family: LVC
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
295+0.24 EUR
Mindestbestellmenge: 295
S3A-13-F S3x_S3xB.pdf
S3A-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 3A; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
295+0.25 EUR
310+ 0.23 EUR
390+ 0.18 EUR
410+ 0.17 EUR
Mindestbestellmenge: 295
DESD1CAN2SOQ-7 DESD1CAN2SOQ.pdf
Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Produkt ist nicht verfügbar
DMN24H11DS-7 DMN24H11DS.pdf
DMN24H11DS-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 0.8A
Case: SOT23
Drain-source voltage: 240V
Drain current: 0.22A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 3.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
DMN24H11DSQ-13 DMN24H11DSQ.pdf
DMN24H11DSQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Pulsed drain current: 0.8A
Case: SOT23
Drain-source voltage: 240V
Drain current: 0.22A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 3.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
DMN24H11DSQ-7 DMN24H11DSQ.pdf
DMN24H11DSQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Pulsed drain current: 0.8A
Case: SOT23
Drain-source voltage: 240V
Drain current: 0.22A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 3.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
PDS1240CTL-13 PDS1240CTL.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 6Ax2; PowerDI®5; reel,tape
Mounting: SMD
Case: PowerDI®5
Max. forward impulse current: 150A
Leakage current: 20mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 0.52V
Load current: 6A x2
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
AP7383-33FDC-7 AP7383.pdf
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; uDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3.3V
Output current: 0.15A
Case: uDFN6
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...30V
Manufacturer series: AP7383
Produkt ist nicht verfügbar
AP7383-33W5-7 AP7383.pdf
AP7383-33W5-7
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...30V
Manufacturer series: AP7383
Produkt ist nicht verfügbar
AP7383-33WR-7 AP7383.pdf
AP7383-33WR-7
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...30V
Manufacturer series: AP7383
Produkt ist nicht verfügbar
AP7383-33Y-13 AP7383.pdf
AP7383-33Y-13
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3.3V
Output current: 0.15A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.5...30V
Manufacturer series: AP7383
Produkt ist nicht verfügbar
AP7115-28WG-7 AP7115_Sept2017_DS.pdf
AP7115-28WG-7
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT25; SMD
Operating temperature: -40...85°C
Manufacturer series: AP7115
Case: SOT25
Kind of package: reel; tape
Output voltage: 2.8V
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...5.5V
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Produkt ist nicht verfügbar
AP7115-30WG-7 AP7115_Sept2017_DS.pdf
AP7115-30WG-7
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; SOT25; SMD
Operating temperature: -40...85°C
Manufacturer series: AP7115
Case: SOT25
Kind of package: reel; tape
Output voltage: 3V
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...5.5V
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Produkt ist nicht verfügbar
AP7115-33WG-7 AP7115_Sept2017_DS.pdf
AP7115-33WG-7
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT25; SMD
Operating temperature: -40...85°C
Manufacturer series: AP7115
Case: SOT25
Kind of package: reel; tape
Output voltage: 3.3V
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...5.5V
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Produkt ist nicht verfügbar
AP2115R5-1.2TRG1 AP2115.pdf
AP2115R5-1.2TRG1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
AP2115R5-2.5TRG1 AP2115.pdf
AP2115R5-2.5TRG1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
AP2115R5-3.3TRG1 AP2115.pdf
AP2115R5-3.3TRG1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
AP2115R5A-2.5TRG1 AP2115.pdf
AP2115R5A-2.5TRG1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
ZXMD63N03XTA ZXMD63N03X.pdf
ZXMD63N03XTA
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 1.9A; 1.25W; MSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.9A
Power dissipation: 1.25W
Case: MSOP8
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+71.5 EUR
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