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KBP01G KBP01G DIODES INCORPORATED KBP005G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
KBP02G KBP02G DIODES INCORPORATED KBP005G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
193+ 0.37 EUR
219+ 0.33 EUR
253+ 0.28 EUR
268+ 0.27 EUR
Mindestbestellmenge: 74
SMBT70A-13-F SMBT70A-13-F DIODES INCORPORATED SMAT70A_SMBT70A.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 77.8÷89.5V; 5.3A; unidirectional; SMB; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.6kW
Mounting: SMD
Case: SMB
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Max. forward impulse current: 5.3A
Breakdown voltage: 77.8...89.5V
Leakage current: 5µA
Produkt ist nicht verfügbar
SMCJ70A-13-F SMCJ70A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 77.8÷86V; 13.3A; unidirectional; SMC; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 1.5kW
Mounting: SMD
Case: SMC
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Max. forward impulse current: 13.3A
Breakdown voltage: 77.8...86V
Leakage current: 5µA
Produkt ist nicht verfügbar
SMCJ170A-13-F SMCJ170A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; unidirectional; SMC; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 1.5kW
Mounting: SMD
Case: SMC
Max. off-state voltage: 170V
Semiconductor structure: unidirectional
Max. forward impulse current: 5.5A
Breakdown voltage: 189...209V
Leakage current: 5µA
auf Bestellung 2494 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
232+ 0.31 EUR
304+ 0.24 EUR
321+ 0.22 EUR
Mindestbestellmenge: 186
DMG4496SSS-13 DMG4496SSS-13 DIODES INCORPORATED ds32048.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Polarisation: unipolar
Power dissipation: 1.42W
Kind of package: reel; tape
Gate charge: 10.2nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 29mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DFLS1200-7 DIODES INCORPORATED ds30628.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward impulse current: 40A
Kind of package: reel; tape
Case: PowerDI®123
Max. off-state voltage: 200V
Max. forward voltage: 0.85V
Load current: 1A
Produkt ist nicht verfügbar
DFLS1200Q-7 DIODES INCORPORATED DFLS1200Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Application: automotive industry
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 2µA
Kind of package: reel; tape
Case: PowerDI®123
Capacitance: 23pF
Max. off-state voltage: 200V
Max. forward voltage: 0.85V
Load current: 1A
Produkt ist nicht verfügbar
DFLS120L-7 DIODES INCORPORATED ds30444.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Case: PowerDI®123
Max. off-state voltage: 20V
Max. forward voltage: 0.36V
Load current: 1A
Produkt ist nicht verfügbar
DFLS120LQ-7 DIODES INCORPORATED DFLS120LQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Application: automotive industry
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 1mA
Power dissipation: 1.67W
Kind of package: reel; tape
Case: PowerDI®123
Capacitance: 75pF
Max. off-state voltage: 20V
Max. forward voltage: 0.36V
Load current: 1A
Produkt ist nicht verfügbar
DFLS160-7 DFLS160-7 DIODES INCORPORATED DFLS160.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Case: PowerDI®123
Capacitance: 67pF
Max. off-state voltage: 60V
Max. forward voltage: 0.5V
Load current: 1A
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
171+0.41 EUR
Mindestbestellmenge: 171
DFLS160Q-7 DIODES INCORPORATED DFLS160Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; 12ns; PowerDI®123
Mounting: SMD
Application: automotive industry
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Reverse recovery time: 12ns
Max. forward impulse current: 50A
Leakage current: 0.1mA
Kind of package: reel; tape
Case: PowerDI®123
Capacitance: 67pF
Max. off-state voltage: 60V
Max. forward voltage: 0.5V
Load current: 1A
Produkt ist nicht verfügbar
PD3S120L-7 DIODES INCORPORATED ds30793.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®323; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 30mA
Max. forward voltage: 0.42V
Max. off-state voltage: 20V
Load current: 1A
Max. forward impulse current: 33A
Capacitance: 49pF
Produkt ist nicht verfügbar
PD3S120LQ-7 DIODES INCORPORATED PD3S120LQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®323; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 10µA
Max. forward voltage: 0.42V
Max. off-state voltage: 20V
Load current: 1A
Max. forward impulse current: 33A
Produkt ist nicht verfügbar
PD3S220LQ-7 DIODES INCORPORATED PD3S220LQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; PowerDI®323; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 30µA
Max. forward voltage: 0.49V
Max. off-state voltage: 20V
Load current: 2A
Max. forward impulse current: 33A
Produkt ist nicht verfügbar
SMBJ45A-13-F SMBJ45A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 50÷57.5V; 8.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...57.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
ZXTR1005K4-13 DIODES INCORPORATED ZXTR1005K4.pdf Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.05A; TO252-4; SMD; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 50mA
Case: TO252-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 10...100V
Produkt ist nicht verfügbar
ZXTR1005PD8-13 DIODES INCORPORATED ZXTR1005PD8.pdf Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.042A; PowerDI®5060-8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 42mA
Case: PowerDI®5060-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 10...100V
Produkt ist nicht verfügbar
DMP2012SN-7 DIODES INCORPORATED DMP2012SN.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -900mA; Idm: -2.8A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -900mA
Pulsed drain current: -2.8A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN66D0LDW-7 DMN66D0LDW-7 DIODES INCORPORATED DMN66D0LDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.073A; Idm: 0.8A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.073A
Pulsed drain current: 0.8A
Power dissipation: 0.25W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
AP431G-13 AP431G-13 DIODES INCORPORATED AP431_A.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOP8; reel,tape; 200mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOP8
Operating temperature: -20...85°C
Kind of package: reel; tape
Maximum output current: 200mA
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
AP431IANTR-G1 AP431IANTR-G1 DIODES INCORPORATED AP431i.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Produkt ist nicht verfügbar
AP431IBNTR-G1 AP431IBNTR-G1 DIODES INCORPORATED AP431i.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Produkt ist nicht verfügbar
AP431IBRTR-G1 AP431IBRTR-G1 DIODES INCORPORATED AP431i.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Produkt ist nicht verfügbar
AP431SAG-7 AP431SAG-7 DIODES INCORPORATED AP431_A.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -20...85°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
AP431SAN1TR-G1 AP431SAN1TR-G1 DIODES INCORPORATED AP431S.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 6860 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
248+ 0.29 EUR
321+ 0.22 EUR
496+ 0.14 EUR
595+ 0.12 EUR
629+ 0.11 EUR
Mindestbestellmenge: 186
AP431SANTR-G1 AP431SANTR-G1 DIODES INCORPORATED AP431S.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Produkt ist nicht verfügbar
AP431SBN1TR-G1 AP431SBN1TR-G1 DIODES INCORPORATED AP431S.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
auf Bestellung 2275 Stücke:
Lieferzeit 14-21 Tag (e)
335+0.21 EUR
500+ 0.14 EUR
570+ 0.13 EUR
625+ 0.11 EUR
Mindestbestellmenge: 335
AP431SBNTR-G1 AP431SBNTR-G1 DIODES INCORPORATED AP431S.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Produkt ist nicht verfügbar
AP431SHAN1TR-G1 AP431SHAN1TR-G1 DIODES INCORPORATED AP431S.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
AP431SHANTR-G1 AP431SHANTR-G1 DIODES INCORPORATED AP431S.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
ZDT6753TA DIODES INCORPORATED ZDT6753.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
ZDT6753TC DIODES INCORPORATED ZDT6753.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
FZT758TA FZT758TA DIODES INCORPORATED FZT758.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
185+ 0.39 EUR
196+ 0.37 EUR
Mindestbestellmenge: 81
ZXGD3003E6TA ZXGD3003E6TA DIODES INCORPORATED ZXGD3003E6.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOT26; -5÷5A; Ch: 1; 40V; OUT: non-inverting
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOT26
Output current: -5...5A
Number of channels: 1
Supply voltage: 40V
Mounting: SMD
Operating temperature: -55...150°C
Impulse rise time: 77ns
Pulse fall time: 85ns
Kind of package: reel; tape
Kind of output: non-inverting
auf Bestellung 2907 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
151+ 0.47 EUR
166+ 0.43 EUR
217+ 0.33 EUR
230+ 0.31 EUR
Mindestbestellmenge: 91
B530CQ-13-F DIODES INCORPORATED B520CQ-B560CQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 5A; 16ns; SMC; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Application: automotive industry
Capacitance: 300pF
Reverse recovery time: 16ns
Load current: 5A
Max. forward voltage: 0.55V
Produkt ist nicht verfügbar
ZXGD3108N8TC DIODES INCORPORATED ZXGD3108N8.pdf Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
DESD32VS2SO-7 DIODES INCORPORATED DESD32VS2SO.pdf Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Produkt ist nicht verfügbar
1SMB5929B-13 1SMB5929B-13 DIODES INCORPORATED 1SMB59xxB_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 2605 Stücke:
Lieferzeit 14-21 Tag (e)
220+0.33 EUR
425+ 0.17 EUR
480+ 0.15 EUR
550+ 0.13 EUR
580+ 0.12 EUR
Mindestbestellmenge: 220
DMT47M2SFVWQ-7 DIODES INCORPORATED DMT47M2SFVWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMT6017LFV-7 DIODES INCORPORATED DMT6017LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 29A; Idm: 140A; 2.12W
Mounting: SMD
Drain-source voltage: 65V
Drain current: 29A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.12W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.3nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 140A
Case: PowerDI3333-8
Produkt ist nicht verfügbar
KBJ402G KBJ402G DIODES INCORPORATED KBJ4005G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 120A
Electrical mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 120A
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: KBJ
Leads: flat pin
Produkt ist nicht verfügbar
KBJ404G KBJ404G DIODES INCORPORATED KBJ4005G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 120A
Electrical mounting: THT
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 120A
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: KBJ
Leads: flat pin
Produkt ist nicht verfügbar
UDZ11B-7 UDZ11B-7 DIODES INCORPORATED udz3v6b_15b_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 11V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 11V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
DT1446-04V-7 DIODES INCORPORATED DT1446-04V.pdf Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Produkt ist nicht verfügbar
DMP2069UFY4-7 DIODES INCORPORATED ds31949.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW
Case: X2-DFN2015-3
Mounting: SMD
On-state resistance: 90mΩ
Kind of package: reel; tape
Power dissipation: 0.53W
Polarisation: unipolar
Gate charge: 9.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -12A
Drain-source voltage: -20V
Drain current: -2.2A
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
DMP2069UFY4Q-7 DIODES INCORPORATED DMP2069UFY4Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW
Case: X2-DFN2015-3
Mounting: SMD
On-state resistance: 90mΩ
Kind of package: reel; tape
Power dissipation: 0.53W
Polarisation: unipolar
Gate charge: 9.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -12A
Drain-source voltage: -20V
Drain current: -2.2A
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
AP22913W6-7 AP22913W6-7 DIODES INCORPORATED AP22913.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: SOT26
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Produkt ist nicht verfügbar
DM1231-02SO-7 DIODES INCORPORATED DM1231-02SO.pdf Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Produkt ist nicht verfügbar
DMN32D2LDF-7 DMN32D2LDF-7 DIODES INCORPORATED ds31238.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.28W
Case: SOT353
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common source
Features of semiconductor devices: ESD protected gate
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
315+0.23 EUR
575+ 0.13 EUR
720+ 0.1 EUR
815+ 0.088 EUR
855+ 0.084 EUR
860+ 0.083 EUR
Mindestbestellmenge: 315
ZXMHC10A07T8TA DIODES INCORPORATED ZXMHC10A07T8.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
B130LB-13-F
+1
 		B130LB-13-F DIODES INCORPORATED ds30043.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SMB; reel,tape
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 90pF
Max. off-state voltage: 30V
Max. forward voltage: 0.445V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
auf Bestellung 5489 Stücke:
Lieferzeit 14-21 Tag (e)
380+0.19 EUR
570+ 0.13 EUR
645+ 0.11 EUR
745+ 0.096 EUR
785+ 0.091 EUR
Mindestbestellmenge: 380
MMBT6427-7-F MMBT6427-7-F DIODES INCORPORATED MMBT6427-7-F.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 3078 Stücke:
Lieferzeit 14-21 Tag (e)
1250+0.057 EUR
1400+ 0.051 EUR
1800+ 0.04 EUR
1900+ 0.038 EUR
Mindestbestellmenge: 1250
SMCJ8.0A-13-F SMCJ8.0A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 8.89÷9.83V; 110.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 110.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2806 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
281+ 0.25 EUR
338+ 0.21 EUR
358+ 0.2 EUR
Mindestbestellmenge: 186
SMCJ8.0CA-13-F SMCJ8.0CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 8.89÷9.83V; 110.3A; bidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 110.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
SMCJ8.5A-13-F SMCJ8.5A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 9.44÷10.4V; 104.2A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.4V
Max. forward impulse current: 104.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
SMCJ85A-13-F SMCJ85A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 94.4÷104V; 10.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 10.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2426 Stücke:
Lieferzeit 14-21 Tag (e)
191+0.38 EUR
283+ 0.25 EUR
331+ 0.22 EUR
350+ 0.2 EUR
Mindestbestellmenge: 191
DMN3033LSN-7 DMN3033LSN-7 DIODES INCORPORATED DMN3033LSN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.4W; SC59
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SC59
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
auf Bestellung 1065 Stücke:
Lieferzeit 14-21 Tag (e)
255+0.28 EUR
285+ 0.25 EUR
370+ 0.19 EUR
390+ 0.18 EUR
Mindestbestellmenge: 255
DMN3033LSNQ-7 DIODES INCORPORATED DMN3033LSNQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 24A; 1.4W; SC59
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Case: SC59
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
BCW68HTA BCW68HTA DIODES INCORPORATED BCW68H.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 5180 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
197+ 0.36 EUR
249+ 0.29 EUR
538+ 0.13 EUR
804+ 0.089 EUR
850+ 0.084 EUR
Mindestbestellmenge: 143
KBP01G KBP005G_ser.pdf
KBP01G
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
KBP02G KBP005G_ser.pdf
KBP02G
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
74+0.97 EUR
193+ 0.37 EUR
219+ 0.33 EUR
253+ 0.28 EUR
268+ 0.27 EUR
Mindestbestellmenge: 74
SMBT70A-13-F SMAT70A_SMBT70A.pdf
SMBT70A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 77.8÷89.5V; 5.3A; unidirectional; SMB; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.6kW
Mounting: SMD
Case: SMB
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Max. forward impulse current: 5.3A
Breakdown voltage: 77.8...89.5V
Leakage current: 5µA
Produkt ist nicht verfügbar
SMCJ70A-13-F SMCJ_ser.pdf
SMCJ70A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 77.8÷86V; 13.3A; unidirectional; SMC; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 1.5kW
Mounting: SMD
Case: SMC
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Max. forward impulse current: 13.3A
Breakdown voltage: 77.8...86V
Leakage current: 5µA
Produkt ist nicht verfügbar
SMCJ170A-13-F SMCJ_ser.pdf
SMCJ170A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; unidirectional; SMC; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 1.5kW
Mounting: SMD
Case: SMC
Max. off-state voltage: 170V
Semiconductor structure: unidirectional
Max. forward impulse current: 5.5A
Breakdown voltage: 189...209V
Leakage current: 5µA
auf Bestellung 2494 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
186+0.39 EUR
232+ 0.31 EUR
304+ 0.24 EUR
321+ 0.22 EUR
Mindestbestellmenge: 186
DMG4496SSS-13 ds32048.pdf
DMG4496SSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Polarisation: unipolar
Power dissipation: 1.42W
Kind of package: reel; tape
Gate charge: 10.2nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 29mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DFLS1200-7 ds30628.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward impulse current: 40A
Kind of package: reel; tape
Case: PowerDI®123
Max. off-state voltage: 200V
Max. forward voltage: 0.85V
Load current: 1A
Produkt ist nicht verfügbar
DFLS1200Q-7 DFLS1200Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Application: automotive industry
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 2µA
Kind of package: reel; tape
Case: PowerDI®123
Capacitance: 23pF
Max. off-state voltage: 200V
Max. forward voltage: 0.85V
Load current: 1A
Produkt ist nicht verfügbar
DFLS120L-7 ds30444.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Case: PowerDI®123
Max. off-state voltage: 20V
Max. forward voltage: 0.36V
Load current: 1A
Produkt ist nicht verfügbar
DFLS120LQ-7 DFLS120LQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Application: automotive industry
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 1mA
Power dissipation: 1.67W
Kind of package: reel; tape
Case: PowerDI®123
Capacitance: 75pF
Max. off-state voltage: 20V
Max. forward voltage: 0.36V
Load current: 1A
Produkt ist nicht verfügbar
DFLS160-7 DFLS160.pdf
DFLS160-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Case: PowerDI®123
Capacitance: 67pF
Max. off-state voltage: 60V
Max. forward voltage: 0.5V
Load current: 1A
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
171+0.41 EUR
Mindestbestellmenge: 171
DFLS160Q-7 DFLS160Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; 12ns; PowerDI®123
Mounting: SMD
Application: automotive industry
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Reverse recovery time: 12ns
Max. forward impulse current: 50A
Leakage current: 0.1mA
Kind of package: reel; tape
Case: PowerDI®123
Capacitance: 67pF
Max. off-state voltage: 60V
Max. forward voltage: 0.5V
Load current: 1A
Produkt ist nicht verfügbar
PD3S120L-7 ds30793.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®323; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 30mA
Max. forward voltage: 0.42V
Max. off-state voltage: 20V
Load current: 1A
Max. forward impulse current: 33A
Capacitance: 49pF
Produkt ist nicht verfügbar
PD3S120LQ-7 PD3S120LQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®323; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 10µA
Max. forward voltage: 0.42V
Max. off-state voltage: 20V
Load current: 1A
Max. forward impulse current: 33A
Produkt ist nicht verfügbar
PD3S220LQ-7 PD3S220LQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; PowerDI®323; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 30µA
Max. forward voltage: 0.49V
Max. off-state voltage: 20V
Load current: 2A
Max. forward impulse current: 33A
Produkt ist nicht verfügbar
SMBJ45A-13-F SMBJ_ser.pdf
SMBJ45A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 50÷57.5V; 8.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...57.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
ZXTR1005K4-13 ZXTR1005K4.pdf
Hersteller: DIODES INCORPORATED
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.05A; TO252-4; SMD; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 50mA
Case: TO252-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 10...100V
Produkt ist nicht verfügbar
ZXTR1005PD8-13 ZXTR1005PD8.pdf
Hersteller: DIODES INCORPORATED
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.042A; PowerDI®5060-8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 42mA
Case: PowerDI®5060-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 10...100V
Produkt ist nicht verfügbar
DMP2012SN-7 DMP2012SN.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -900mA; Idm: -2.8A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -900mA
Pulsed drain current: -2.8A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN66D0LDW-7 DMN66D0LDW.pdf
DMN66D0LDW-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.073A; Idm: 0.8A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.073A
Pulsed drain current: 0.8A
Power dissipation: 0.25W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
AP431G-13 AP431_A.pdf
AP431G-13
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOP8; reel,tape; 200mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOP8
Operating temperature: -20...85°C
Kind of package: reel; tape
Maximum output current: 200mA
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
AP431IANTR-G1 AP431i.pdf
AP431IANTR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Produkt ist nicht verfügbar
AP431IBNTR-G1 AP431i.pdf
AP431IBNTR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Produkt ist nicht verfügbar
AP431IBRTR-G1 AP431i.pdf
AP431IBRTR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Produkt ist nicht verfügbar
AP431SAG-7 AP431_A.pdf
AP431SAG-7
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -20...85°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
AP431SAN1TR-G1 AP431S.pdf
AP431SAN1TR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 6860 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
186+0.39 EUR
248+ 0.29 EUR
321+ 0.22 EUR
496+ 0.14 EUR
595+ 0.12 EUR
629+ 0.11 EUR
Mindestbestellmenge: 186
AP431SANTR-G1 AP431S.pdf
AP431SANTR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Produkt ist nicht verfügbar
AP431SBN1TR-G1 AP431S.pdf
AP431SBN1TR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
auf Bestellung 2275 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
335+0.21 EUR
500+ 0.14 EUR
570+ 0.13 EUR
625+ 0.11 EUR
Mindestbestellmenge: 335
AP431SBNTR-G1 AP431S.pdf
AP431SBNTR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Produkt ist nicht verfügbar
AP431SHAN1TR-G1 AP431S.pdf
AP431SHAN1TR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
AP431SHANTR-G1 AP431S.pdf
AP431SHANTR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
ZDT6753TA ZDT6753.pdf
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
ZDT6753TC ZDT6753.pdf
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
FZT758TA FZT758.pdf
FZT758TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
81+0.89 EUR
185+ 0.39 EUR
196+ 0.37 EUR
Mindestbestellmenge: 81
ZXGD3003E6TA ZXGD3003E6.pdf
ZXGD3003E6TA
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOT26; -5÷5A; Ch: 1; 40V; OUT: non-inverting
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOT26
Output current: -5...5A
Number of channels: 1
Supply voltage: 40V
Mounting: SMD
Operating temperature: -55...150°C
Impulse rise time: 77ns
Pulse fall time: 85ns
Kind of package: reel; tape
Kind of output: non-inverting
auf Bestellung 2907 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
91+0.79 EUR
151+ 0.47 EUR
166+ 0.43 EUR
217+ 0.33 EUR
230+ 0.31 EUR
Mindestbestellmenge: 91
B530CQ-13-F B520CQ-B560CQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 5A; 16ns; SMC; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Application: automotive industry
Capacitance: 300pF
Reverse recovery time: 16ns
Load current: 5A
Max. forward voltage: 0.55V
Produkt ist nicht verfügbar
ZXGD3108N8TC ZXGD3108N8.pdf
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
DESD32VS2SO-7 DESD32VS2SO.pdf
Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Produkt ist nicht verfügbar
1SMB5929B-13 1SMB59xxB_ser.pdf
1SMB5929B-13
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 2605 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
220+0.33 EUR
425+ 0.17 EUR
480+ 0.15 EUR
550+ 0.13 EUR
580+ 0.12 EUR
Mindestbestellmenge: 220
DMT47M2SFVWQ-7 DMT47M2SFVWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMT6017LFV-7 DMT6017LFV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 29A; Idm: 140A; 2.12W
Mounting: SMD
Drain-source voltage: 65V
Drain current: 29A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.12W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.3nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 140A
Case: PowerDI3333-8
Produkt ist nicht verfügbar
KBJ402G KBJ4005G_ser.pdf
KBJ402G
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 120A
Electrical mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 120A
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: KBJ
Leads: flat pin
Produkt ist nicht verfügbar
KBJ404G KBJ4005G_ser.pdf
KBJ404G
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 120A
Electrical mounting: THT
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 120A
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: KBJ
Leads: flat pin
Produkt ist nicht verfügbar
UDZ11B-7 udz3v6b_15b_ser.pdf
UDZ11B-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 11V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 11V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
DT1446-04V-7 DT1446-04V.pdf
Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Produkt ist nicht verfügbar
DMP2069UFY4-7 ds31949.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW
Case: X2-DFN2015-3
Mounting: SMD
On-state resistance: 90mΩ
Kind of package: reel; tape
Power dissipation: 0.53W
Polarisation: unipolar
Gate charge: 9.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -12A
Drain-source voltage: -20V
Drain current: -2.2A
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
DMP2069UFY4Q-7 DMP2069UFY4Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW
Case: X2-DFN2015-3
Mounting: SMD
On-state resistance: 90mΩ
Kind of package: reel; tape
Power dissipation: 0.53W
Polarisation: unipolar
Gate charge: 9.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -12A
Drain-source voltage: -20V
Drain current: -2.2A
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
AP22913W6-7 AP22913.pdf
AP22913W6-7
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: SOT26
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Produkt ist nicht verfügbar
DM1231-02SO-7 DM1231-02SO.pdf
Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Produkt ist nicht verfügbar
DMN32D2LDF-7 ds31238.pdf
DMN32D2LDF-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.28W
Case: SOT353
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common source
Features of semiconductor devices: ESD protected gate
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
315+0.23 EUR
575+ 0.13 EUR
720+ 0.1 EUR
815+ 0.088 EUR
855+ 0.084 EUR
860+ 0.083 EUR
Mindestbestellmenge: 315
ZXMHC10A07T8TA ZXMHC10A07T8.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
B130LB-13-F ds30043.pdf
B130LB-13-F
+1
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SMB; reel,tape
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 90pF
Max. off-state voltage: 30V
Max. forward voltage: 0.445V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
auf Bestellung 5489 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
380+0.19 EUR
570+ 0.13 EUR
645+ 0.11 EUR
745+ 0.096 EUR
785+ 0.091 EUR
Mindestbestellmenge: 380
MMBT6427-7-F MMBT6427-7-F.pdf
MMBT6427-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 3078 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1250+0.057 EUR
1400+ 0.051 EUR
1800+ 0.04 EUR
1900+ 0.038 EUR
Mindestbestellmenge: 1250
SMCJ8.0A-13-F SMCJ_ser.pdf
SMCJ8.0A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 8.89÷9.83V; 110.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 110.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2806 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
186+0.39 EUR
281+ 0.25 EUR
338+ 0.21 EUR
358+ 0.2 EUR
Mindestbestellmenge: 186
SMCJ8.0CA-13-F SMCJ_ser.pdf
SMCJ8.0CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 8.89÷9.83V; 110.3A; bidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 110.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
SMCJ8.5A-13-F SMCJ_ser.pdf
SMCJ8.5A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 9.44÷10.4V; 104.2A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.4V
Max. forward impulse current: 104.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
SMCJ85A-13-F SMCJ_ser.pdf
SMCJ85A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 94.4÷104V; 10.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 10.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2426 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
191+0.38 EUR
283+ 0.25 EUR
331+ 0.22 EUR
350+ 0.2 EUR
Mindestbestellmenge: 191
DMN3033LSN-7 DMN3033LSN.pdf
DMN3033LSN-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.4W; SC59
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SC59
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
auf Bestellung 1065 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
255+0.28 EUR
285+ 0.25 EUR
370+ 0.19 EUR
390+ 0.18 EUR
Mindestbestellmenge: 255
DMN3033LSNQ-7 DMN3033LSNQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 24A; 1.4W; SC59
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Case: SC59
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
BCW68HTA BCW68H.pdf
BCW68HTA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 5180 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
143+0.5 EUR
197+ 0.36 EUR
249+ 0.29 EUR
538+ 0.13 EUR
804+ 0.089 EUR
850+ 0.084 EUR
Mindestbestellmenge: 143
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