Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75520) > Seite 1248 nach 1259
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| AP2191DFMG-7 | DIODES INCORPORATED |
 Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD Supply voltage: 2.7...5.5V DC Kind of package: reel; tape On-state resistance: 90mΩ Output current: 1.5A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Active logical level: high Kind of integrated circuit: high-side; USB switch Mounting: SMD Case: U-DFN2018-6 |
Produkt ist nicht verfügbar |
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| AP2191DSG-13-82 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD Supply voltage: 2.7...5.5V DC On-state resistance: 90mΩ Output current: 1.5A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Active logical level: high Kind of integrated circuit: high-side; USB switch Mounting: SMD Case: SO8-W |
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AP2191DWG-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD Supply voltage: 2.7...5.5V DC Kind of package: reel; tape On-state resistance: 95mΩ Output current: 1.5A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Active logical level: high Kind of integrated circuit: high-side; USB switch Mounting: SMD Case: SOT25 |
Produkt ist nicht verfügbar |
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| AP2191FMG-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD Supply voltage: 2.7...5.5V DC Kind of package: reel; tape On-state resistance: 95mΩ Output current: 1.5A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Active logical level: high Kind of integrated circuit: high-side; USB switch Mounting: SMD Case: U-DFN2018-6 |
Produkt ist nicht verfügbar |
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AP2191WG-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD Supply voltage: 2.7...5.5V DC Kind of package: reel; tape On-state resistance: 95mΩ Output current: 1.5A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Active logical level: high Kind of integrated circuit: high-side; USB switch Mounting: SMD Case: SOT25 |
Produkt ist nicht verfügbar |
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| AL1666AS-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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| AL1666S-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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SMAJ17A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 18.9÷20.9V; 14.5A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 17V Breakdown voltage: 18.9...20.9V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 4895 Stücke: Lieferzeit 14-21 Tag (e) |
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| SBRT40M80CTB | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
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ZVN3306FTA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; Idm: 3A; 0.33W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.15A Pulsed drain current: 3A Power dissipation: 0.33W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2525 Stücke: Lieferzeit 14-21 Tag (e) |
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AZ23C15-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; double,common anode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double |
auf Bestellung 5890 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP6023LFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.2A Pulsed drain current: -55A Power dissipation: 1W Case: PowerDI®3333-8 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMP6023LFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -8.2A Pulsed drain current: -55A Power dissipation: 2.1W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Gate charge: 53.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMP6023LFGQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -8.2A Pulsed drain current: -55A Power dissipation: 2.1W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Gate charge: 53.1nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| DMP6023LFGQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.2A Pulsed drain current: -55A Power dissipation: 1W Case: PowerDI®3333-8 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| DMN63D1LV-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 450mA; Idm: 1.2A; 940mW; SOT563 Case: SOT563 Mounting: SMD Power dissipation: 0.94W Polarisation: unipolar Kind of package: reel; tape Gate charge: 392pC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1.2A Drain-source voltage: 60V Drain current: 0.45A On-state resistance: 3Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| DMN63D1LV-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 450mA; Idm: 1.2A; 940mW; SOT563 Case: SOT563 Mounting: SMD Power dissipation: 0.94W Polarisation: unipolar Kind of package: reel; tape Gate charge: 392pC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1.2A Drain-source voltage: 60V Drain current: 0.45A On-state resistance: 3Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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SMAJ8.5A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 9.44÷10.4V; 27.7A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 8.5V Breakdown voltage: 9.44...10.4V Max. forward impulse current: 27.7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 10µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| APR340W6-7 | DIODES INCORPORATED |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; SOT26; 0÷22V; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Case: SOT26 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 0...22V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| APR347W6-7 | DIODES INCORPORATED |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; SOT26; 0÷22V; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Case: SOT26 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 0...22V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| AL5809-100QP1-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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| AL5809-120QP1-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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| AL5809-150QP1-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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| AL5809-15QP1-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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| AL5809-25QP1-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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| AL5809-30QP1-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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| AL5809-40QP1-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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| AL5809-50QP1-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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| AL5809-60QP1-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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| AL5809-90QP1-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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| D12V0H1U2LP1610-7 | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS Type of diode: TVS |
Produkt ist nicht verfügbar |
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| D12V0H1U2WS-7 | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS Type of diode: TVS |
Produkt ist nicht verfügbar |
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| D12V0M1U2S9-7 | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS Type of diode: TVS |
Produkt ist nicht verfügbar |
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| SD12C-7 | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 360W; 13V; 15A; bidirectional; SOD323; reel,tape Type of diode: TVS Breakdown voltage: 13V Max. forward impulse current: 15A Peak pulse power dissipation: 360W Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 12V Features of semiconductor devices: ESD protection Kind of package: reel; tape Capacitance: 52.6pF |
Produkt ist nicht verfügbar |
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DGD2304S8-13 | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver Case: SO8 Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
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SMCJ40CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 23.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 23.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 1300 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN65D8L-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.54W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Power dissipation: 0.54W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 960 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN65D8LQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; Idm: 0.8A; 540mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Pulsed drain current: 0.8A Power dissipation: 0.54W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 870pC Kind of package: reel; tape Kind of channel: enhanced |
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DMN65D8LQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; Idm: 0.8A; 540mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Pulsed drain current: 0.8A Power dissipation: 0.54W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 870pC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| ZXMS6004FFQ-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT23F On-state resistance: 0.6Ω Kind of package: reel; tape Supply voltage: 0...5.5V Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
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| DMNH6042SPDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| ZDT749TA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 25V; 2A; 2.75W; SM8 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 2A Power dissipation: 2.75W Case: SM8 Pulsed collector current: 6A Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz |
Produkt ist nicht verfügbar |
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| AP33771DKZ-13 | DIODES INCORPORATED |
Category: USB interfaces - integrated circuits Description: IC: interface; GPIO,USB 3.0; USB PD controller; 3.3÷24VDC; WQFN24 Type of integrated circuit: interface Interface: GPIO; USB 3.0 Kind of integrated circuit: USB PD controller Supply voltage: 3.3...24V DC Kind of package: reel; tape Case: WQFN24 Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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| AP33772DKZ-13 | DIODES INCORPORATED |
Category: USB interfaces - integrated circuits Description: IC: interface; GPIO,I2C,USB 3.0; USB PD controller; 3.3÷24VDC Interface: GPIO; I2C; USB 3.0 Supply voltage: 3.3...24V DC Mounting: SMD Case: WQFN24 Kind of package: reel; tape Type of integrated circuit: interface Kind of integrated circuit: USB PD controller Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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FZT958TA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.6W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.5A Power dissipation: 1.6W Case: SOT223 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 85MHz |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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| AP66200FVBW-13 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 3.8÷60VDC; Uout: 0.8÷50VDC; 2A Operating temperature: -40...125°C Frequency: 0.5MHz Output voltage: 0.8...50V DC Output current: 2A Type of integrated circuit: PMIC Input voltage: 3.8...60V DC Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: buck Mounting: SMD Case: U-QDFN4040-16SWP Type UXB |
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| DESDA5V3L-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
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| AP22913CN4-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Supply voltage: 2.7...5.5V DC Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch Mounting: SMD Case: X1-WLB0909-4 Output current: 2A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Active logical level: high |
Produkt ist nicht verfügbar |
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| DMTH41M8SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 3.03W Mounting: SMD Drain-source voltage: 40V Drain current: 100A On-state resistance: 1.8mΩ Type of transistor: N-MOSFET Power dissipation: 3.03W Polarisation: unipolar Kind of package: reel; tape Gate charge: 79.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Case: PowerDI5060-8 |
Produkt ist nicht verfügbar |
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| DMTH41M8SPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 3.03W Mounting: SMD Drain-source voltage: 40V Drain current: 100A On-state resistance: 1.8mΩ Type of transistor: N-MOSFET Power dissipation: 3.03W Polarisation: unipolar Kind of package: reel; tape Gate charge: 79.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Case: PowerDI5060-8 |
Produkt ist nicht verfügbar |
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SBR40U100CT | DIODES INCORPORATED |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SBR®; THT; 100V; 40A; TO220AB; tube Type of diode: Schottky rectifying Max. off-state voltage: 100V Max. forward voltage: 0.72V Load current: 40A Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Max. forward impulse current: 235A Kind of package: tube Technology: SBR® |
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| DMP4006SPSWQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -92A; Idm: -460A; 3.4W Kind of package: reel; tape Gate charge: 162nC Kind of channel: enhanced Gate-source voltage: ±20V Case: PowerDI5060-8 Pulsed drain current: -460A Drain-source voltage: -40V Drain current: -92A On-state resistance: 7.9mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 3.4W Polarisation: unipolar |
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| DMP4010SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252 Kind of package: reel; tape Gate charge: 91nC Kind of channel: enhanced Gate-source voltage: ±25V Case: TO252 Pulsed drain current: -100A Drain-source voltage: -40V Drain current: -12A On-state resistance: 14mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 3.3W Polarisation: unipolar |
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| DMP4010SK3Q-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252 Kind of package: reel; tape Gate charge: 91nC Kind of channel: enhanced Gate-source voltage: ±25V Case: TO252 Pulsed drain current: -100A Drain-source voltage: -40V Drain current: -12A On-state resistance: 14mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 3.3W Polarisation: unipolar |
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| DMP4011SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252 Kind of package: reel; tape Gate charge: 52nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO252 Pulsed drain current: -200A Drain-source voltage: -40V Drain current: -11A On-state resistance: 19mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 3.1W Polarisation: unipolar |
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| DMP4011SK3Q-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252 Kind of package: reel; tape Gate charge: 52nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO252 Pulsed drain current: -200A Drain-source voltage: -40V Drain current: -11A On-state resistance: 19mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 3.1W Polarisation: unipolar |
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| DMP4011SPSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -9.4A; Idm: -300A; 2.3W Kind of package: reel; tape Gate charge: 52nC Kind of channel: enhanced Gate-source voltage: ±20V Case: PowerDI5060-8 Pulsed drain current: -300A Drain-source voltage: -40V Drain current: -9.4A On-state resistance: 14mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 2.3W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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| DMP4025LK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -35A; 2.78W; TO252 Kind of package: reel; tape Gate charge: 33.7nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO252 Pulsed drain current: -35A Drain-source voltage: -40V Drain current: -6.9A On-state resistance: 45mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 2.78W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP4025LSDQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.1A; Idm: -28A; 2.14W; SO8 Kind of package: reel; tape Gate charge: 33.7nC Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 Pulsed drain current: -28A Drain-source voltage: -40V Drain current: -6.1A On-state resistance: 45mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 2.14W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP4025LSS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8 Kind of package: reel; tape Gate charge: 33.7nC Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 Pulsed drain current: -30A Drain-source voltage: -40V Drain current: -6.9A On-state resistance: 45mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 2.4W Polarisation: unipolar |
Produkt ist nicht verfügbar |
| AP2191DFMG-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 90mΩ
Output current: 1.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: U-DFN2018-6
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 90mΩ
Output current: 1.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: U-DFN2018-6
Produkt ist nicht verfügbar
| AP2191DSG-13-82 |
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
On-state resistance: 90mΩ
Output current: 1.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: SO8-W
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
On-state resistance: 90mΩ
Output current: 1.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: SO8-W
Produkt ist nicht verfügbar
| AP2191DWG-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: SOT25
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: SOT25
Produkt ist nicht verfügbar
| AP2191FMG-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: U-DFN2018-6
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: U-DFN2018-6
Produkt ist nicht verfügbar
| AP2191WG-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: SOT25
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 95mΩ
Output current: 1.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: SOT25
Produkt ist nicht verfügbar
| AL1666AS-13 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| AL1666S-13 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| SMAJ17A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18.9÷20.9V; 14.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...20.9V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18.9÷20.9V; 14.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...20.9V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 4895 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 290+ | 0.25 EUR |
| 600+ | 0.12 EUR |
| 660+ | 0.11 EUR |
| 910+ | 0.079 EUR |
| 965+ | 0.074 EUR |
| SBRT40M80CTB |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
| ZVN3306FTA |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; Idm: 3A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.15A
Pulsed drain current: 3A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; Idm: 3A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.15A
Pulsed drain current: 3A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2525 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 179+ | 0.4 EUR |
| 228+ | 0.31 EUR |
| 299+ | 0.24 EUR |
| 316+ | 0.23 EUR |
| AZ23C15-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
auf Bestellung 5890 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 460+ | 0.16 EUR |
| 1020+ | 0.07 EUR |
| 1160+ | 0.062 EUR |
| 1400+ | 0.051 EUR |
| 1480+ | 0.048 EUR |
| DMP6023LFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.2A
Pulsed drain current: -55A
Power dissipation: 1W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.2A
Pulsed drain current: -55A
Power dissipation: 1W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMP6023LFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.2A
Pulsed drain current: -55A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.2A
Pulsed drain current: -55A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMP6023LFGQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.2A
Pulsed drain current: -55A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.2A
Pulsed drain current: -55A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| DMP6023LFGQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.2A
Pulsed drain current: -55A
Power dissipation: 1W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.2A
Pulsed drain current: -55A
Power dissipation: 1W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| DMN63D1LV-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 450mA; Idm: 1.2A; 940mW; SOT563
Case: SOT563
Mounting: SMD
Power dissipation: 0.94W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 392pC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Drain-source voltage: 60V
Drain current: 0.45A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 450mA; Idm: 1.2A; 940mW; SOT563
Case: SOT563
Mounting: SMD
Power dissipation: 0.94W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 392pC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Drain-source voltage: 60V
Drain current: 0.45A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| DMN63D1LV-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 450mA; Idm: 1.2A; 940mW; SOT563
Case: SOT563
Mounting: SMD
Power dissipation: 0.94W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 392pC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Drain-source voltage: 60V
Drain current: 0.45A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 450mA; Idm: 1.2A; 940mW; SOT563
Case: SOT563
Mounting: SMD
Power dissipation: 0.94W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 392pC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Drain-source voltage: 60V
Drain current: 0.45A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| SMAJ8.5A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 9.44÷10.4V; 27.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.4V
Max. forward impulse current: 27.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 9.44÷10.4V; 27.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.4V
Max. forward impulse current: 27.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| APR340W6-7 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT26; 0÷22V; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SOT26
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 0...22V
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT26; 0÷22V; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SOT26
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 0...22V
Kind of package: reel; tape
Produkt ist nicht verfügbar
| APR347W6-7 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT26; 0÷22V; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SOT26
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 0...22V
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT26; 0÷22V; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SOT26
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 0...22V
Kind of package: reel; tape
Produkt ist nicht verfügbar
| AL5809-100QP1-7 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| AL5809-120QP1-7 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| AL5809-150QP1-7 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| AL5809-15QP1-7 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| AL5809-25QP1-7 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| AL5809-30QP1-7 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| AL5809-40QP1-7 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| AL5809-50QP1-7 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| AL5809-60QP1-7 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| AL5809-90QP1-7 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| D12V0H1U2LP1610-7 |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
Produkt ist nicht verfügbar
| D12V0H1U2WS-7 |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
Produkt ist nicht verfügbar
| D12V0M1U2S9-7 |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
Produkt ist nicht verfügbar
| SD12C-7 |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 360W; 13V; 15A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Breakdown voltage: 13V
Max. forward impulse current: 15A
Peak pulse power dissipation: 360W
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Capacitance: 52.6pF
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 360W; 13V; 15A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Breakdown voltage: 13V
Max. forward impulse current: 15A
Peak pulse power dissipation: 360W
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Capacitance: 52.6pF
Produkt ist nicht verfügbar
| DGD2304S8-13 |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
| SMCJ40CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 23.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 23.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 23.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 23.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1300 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 186+ | 0.39 EUR |
| 249+ | 0.29 EUR |
| 323+ | 0.22 EUR |
| 341+ | 0.21 EUR |
| DMN65D8L-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.54W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.54W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 480+ | 0.15 EUR |
| 960+ | 0.074 EUR |
| DMN65D8LQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; Idm: 0.8A; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Pulsed drain current: 0.8A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 870pC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; Idm: 0.8A; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Pulsed drain current: 0.8A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 870pC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN65D8LQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; Idm: 0.8A; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Pulsed drain current: 0.8A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 870pC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210mA; Idm: 0.8A; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.21A
Pulsed drain current: 0.8A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 870pC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| ZXMS6004FFQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT23F
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V
Operating temperature: -40...125°C
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT23F
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT23F
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
| DMNH6042SPDQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| ZDT749TA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 2A; 2.75W; SM8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 2A; 2.75W; SM8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
| AP33771DKZ-13 |
|
Hersteller: DIODES INCORPORATED
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO,USB 3.0; USB PD controller; 3.3÷24VDC; WQFN24
Type of integrated circuit: interface
Interface: GPIO; USB 3.0
Kind of integrated circuit: USB PD controller
Supply voltage: 3.3...24V DC
Kind of package: reel; tape
Case: WQFN24
Mounting: SMD
Operating temperature: -40...85°C
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO,USB 3.0; USB PD controller; 3.3÷24VDC; WQFN24
Type of integrated circuit: interface
Interface: GPIO; USB 3.0
Kind of integrated circuit: USB PD controller
Supply voltage: 3.3...24V DC
Kind of package: reel; tape
Case: WQFN24
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
| AP33772DKZ-13 |
|
Hersteller: DIODES INCORPORATED
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO,I2C,USB 3.0; USB PD controller; 3.3÷24VDC
Interface: GPIO; I2C; USB 3.0
Supply voltage: 3.3...24V DC
Mounting: SMD
Case: WQFN24
Kind of package: reel; tape
Type of integrated circuit: interface
Kind of integrated circuit: USB PD controller
Operating temperature: -40...85°C
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO,I2C,USB 3.0; USB PD controller; 3.3÷24VDC
Interface: GPIO; I2C; USB 3.0
Supply voltage: 3.3...24V DC
Mounting: SMD
Case: WQFN24
Kind of package: reel; tape
Type of integrated circuit: interface
Kind of integrated circuit: USB PD controller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
| FZT958TA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 68+ | 1.06 EUR |
| 125+ | 0.57 EUR |
| 142+ | 0.51 EUR |
| 158+ | 0.45 EUR |
| 167+ | 0.43 EUR |
| AP66200FVBW-13 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.8÷60VDC; Uout: 0.8÷50VDC; 2A
Operating temperature: -40...125°C
Frequency: 0.5MHz
Output voltage: 0.8...50V DC
Output current: 2A
Type of integrated circuit: PMIC
Input voltage: 3.8...60V DC
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Case: U-QDFN4040-16SWP Type UXB
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.8÷60VDC; Uout: 0.8÷50VDC; 2A
Operating temperature: -40...125°C
Frequency: 0.5MHz
Output voltage: 0.8...50V DC
Output current: 2A
Type of integrated circuit: PMIC
Input voltage: 3.8...60V DC
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Case: U-QDFN4040-16SWP Type UXB
Produkt ist nicht verfügbar
| DESDA5V3L-7 |
|
Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Produkt ist nicht verfügbar
| AP22913CN4-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: X1-WLB0909-4
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: X1-WLB0909-4
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Produkt ist nicht verfügbar
| DMTH41M8SPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 3.03W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.03W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 79.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: PowerDI5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 3.03W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.03W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 79.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: PowerDI5060-8
Produkt ist nicht verfügbar
| DMTH41M8SPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 3.03W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.03W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 79.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: PowerDI5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 3.03W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.03W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 79.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: PowerDI5060-8
Produkt ist nicht verfügbar
| SBR40U100CT |
|
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 100V; 40A; TO220AB; tube
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward voltage: 0.72V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Max. forward impulse current: 235A
Kind of package: tube
Technology: SBR®
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 100V; 40A; TO220AB; tube
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward voltage: 0.72V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Max. forward impulse current: 235A
Kind of package: tube
Technology: SBR®
Produkt ist nicht verfügbar
| DMP4006SPSWQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -92A; Idm: -460A; 3.4W
Kind of package: reel; tape
Gate charge: 162nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI5060-8
Pulsed drain current: -460A
Drain-source voltage: -40V
Drain current: -92A
On-state resistance: 7.9mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.4W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -92A; Idm: -460A; 3.4W
Kind of package: reel; tape
Gate charge: 162nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI5060-8
Pulsed drain current: -460A
Drain-source voltage: -40V
Drain current: -92A
On-state resistance: 7.9mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.4W
Polarisation: unipolar
Produkt ist nicht verfügbar
| DMP4010SK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252
Kind of package: reel; tape
Gate charge: 91nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO252
Pulsed drain current: -100A
Drain-source voltage: -40V
Drain current: -12A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.3W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252
Kind of package: reel; tape
Gate charge: 91nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO252
Pulsed drain current: -100A
Drain-source voltage: -40V
Drain current: -12A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.3W
Polarisation: unipolar
Produkt ist nicht verfügbar
| DMP4010SK3Q-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252
Kind of package: reel; tape
Gate charge: 91nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO252
Pulsed drain current: -100A
Drain-source voltage: -40V
Drain current: -12A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.3W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252
Kind of package: reel; tape
Gate charge: 91nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO252
Pulsed drain current: -100A
Drain-source voltage: -40V
Drain current: -12A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.3W
Polarisation: unipolar
Produkt ist nicht verfügbar
| DMP4011SK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252
Kind of package: reel; tape
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252
Pulsed drain current: -200A
Drain-source voltage: -40V
Drain current: -11A
On-state resistance: 19mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.1W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252
Kind of package: reel; tape
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252
Pulsed drain current: -200A
Drain-source voltage: -40V
Drain current: -11A
On-state resistance: 19mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.1W
Polarisation: unipolar
Produkt ist nicht verfügbar
| DMP4011SK3Q-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252
Kind of package: reel; tape
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252
Pulsed drain current: -200A
Drain-source voltage: -40V
Drain current: -11A
On-state resistance: 19mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.1W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -200A; 3.1W; TO252
Kind of package: reel; tape
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252
Pulsed drain current: -200A
Drain-source voltage: -40V
Drain current: -11A
On-state resistance: 19mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 3.1W
Polarisation: unipolar
Produkt ist nicht verfügbar
| DMP4011SPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9.4A; Idm: -300A; 2.3W
Kind of package: reel; tape
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI5060-8
Pulsed drain current: -300A
Drain-source voltage: -40V
Drain current: -9.4A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.3W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9.4A; Idm: -300A; 2.3W
Kind of package: reel; tape
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI5060-8
Pulsed drain current: -300A
Drain-source voltage: -40V
Drain current: -9.4A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.3W
Polarisation: unipolar
Produkt ist nicht verfügbar
| DMP4025LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -35A; 2.78W; TO252
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252
Pulsed drain current: -35A
Drain-source voltage: -40V
Drain current: -6.9A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.78W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -35A; 2.78W; TO252
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252
Pulsed drain current: -35A
Drain-source voltage: -40V
Drain current: -6.9A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.78W
Polarisation: unipolar
Produkt ist nicht verfügbar
| DMP4025LSDQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.1A; Idm: -28A; 2.14W; SO8
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Pulsed drain current: -28A
Drain-source voltage: -40V
Drain current: -6.1A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.14W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.1A; Idm: -28A; 2.14W; SO8
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Pulsed drain current: -28A
Drain-source voltage: -40V
Drain current: -6.1A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.14W
Polarisation: unipolar
Produkt ist nicht verfügbar
| DMP4025LSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Pulsed drain current: -30A
Drain-source voltage: -40V
Drain current: -6.9A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Pulsed drain current: -30A
Drain-source voltage: -40V
Drain current: -6.9A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
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