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DMP4011SPSQ-13 DIODES INCORPORATED


DMP4011SPSQ.pdf Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9.4A; Idm: -300A; 2.3W
Kind of package: reel; tape
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI5060-8
Pulsed drain current: -300A
Drain-source voltage: -40V
Drain current: -9.4A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.3W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
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Technische Details DMP4011SPSQ-13 DIODES INCORPORATED

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -40V; -9.4A; Idm: -300A; 2.3W, Kind of package: reel; tape, Gate charge: 52nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Case: PowerDI5060-8, Pulsed drain current: -300A, Drain-source voltage: -40V, Drain current: -9.4A, On-state resistance: 14mΩ, Type of transistor: P-MOSFET, Mounting: SMD, Power dissipation: 2.3W, Polarisation: unipolar, Anzahl je Verpackung: 2500 Stücke.

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DMP4011SPSQ-13 DMP4011SPSQ-13 Hersteller : Diodes Incorporated DMP4011SPSQ.pdf Description: MOSFET P-CH 40V PWRDI5060
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DMP4011SPSQ-13 DMP4011SPSQ-13 Hersteller : Diodes Incorporated DMP4011SPSQ.pdf Description: MOSFET P-CH 40V PWRDI5060
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DMP4011SPSQ-13 Hersteller : Diodes Incorporated diodes_inc_diod-s-a0008533990-1-1761594.pdf MOSFET MOSFET BVDSS: 31V-40V
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DMP4011SPSQ-13 Hersteller : DIODES INCORPORATED DMP4011SPSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9.4A; Idm: -300A; 2.3W
Kind of package: reel; tape
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI5060-8
Pulsed drain current: -300A
Drain-source voltage: -40V
Drain current: -9.4A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.3W
Polarisation: unipolar
Produkt ist nicht verfügbar