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AP7312-1830FM-7 DIODES INCORPORATED AP7312.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.15A; uDFN6; SMD; ±2%
Manufacturer series: AP7312
Kind of package: reel; tape
Output voltage: 1.8/3V DC
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 2
Input voltage: 2...6V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Case: uDFN6
Tolerance: ±2%
Produkt ist nicht verfügbar
AP7312-1833FM-7 DIODES INCORPORATED AP7312.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.15A; uDFN6; SMD; ±2%
Manufacturer series: AP7312
Kind of package: reel; tape
Output voltage: 1.8/3.3V DC
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 2
Input voltage: 2...6V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Case: uDFN6
Tolerance: ±2%
Produkt ist nicht verfügbar
DMN4040SK3-13 DIODES INCORPORATED DMN4040SK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; Idm: 50A; 8.9W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Pulsed drain current: 50A
Power dissipation: 8.9W
Gate charge: 18.6nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 54mΩ
Produkt ist nicht verfügbar
MMBZ5233BS-7-F MMBZ5233BS-7-F DIODES INCORPORATED ds31039.pdf ds31037.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6V; SMD; reel,tape; SOT363; double independent
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: double independent
Leakage current: 5µA
Zener voltage: 6V
Type of diode: Zener
Power dissipation: 0.2W
Produkt ist nicht verfügbar
DMN2300UFB-7B DIODES INCORPORATED DMN2300UFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 940mA; Idm: 8A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.94A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 0.89nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN2300UFB4-7B DMN2300UFB4-7B DIODES INCORPORATED DMN2300UFB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.96A; 0.5W; X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.96A
Power dissipation: 0.5W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
DMN2300UFD-7 DIODES INCORPORATED DMN2300UFD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.34A; Idm: 6A; 470mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.34A
Pulsed drain current: 6A
Power dissipation: 0.47W
Case: X1-DFN1212-3
Gate-source voltage: ±8V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN2300UFL4-7 DIODES INCORPORATED DMN2300UFL4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.19A; Idm: 6A; 1.39W
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6A
Mounting: SMD
Case: X2-DFN1310-6
Drain-source voltage: 20V
Drain current: 1.19A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 1.39W
Polarisation: unipolar
Gate charge: 3.2nC
Produkt ist nicht verfügbar
MMSZ5239B-7-F MMSZ5239B-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 5970 Stücke:
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1120+0.064 EUR
2220+ 0.032 EUR
2500+ 0.029 EUR
2960+ 0.024 EUR
3140+ 0.023 EUR
Mindestbestellmenge: 1120
MMSZ5239BS-7-F MMSZ5239BS-7-F DIODES INCORPORATED mmsz52xxbs_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
BAS40V-7 DIODES INCORPORATED ds30561.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.2A; 5ns; SOT563; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Reverse recovery time: 5ns
Power dissipation: 0.15W
Semiconductor structure: double independent
Capacitance: 5pF
Case: SOT563
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Max. forward voltage: 1V
Leakage current: 0.2µA
Produkt ist nicht verfügbar
SBRT40V100CT SBRT40V100CT DIODES INCORPORATED SBRT40V100CT.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; Trench SBR®; THT; 100V; 20Ax2; TO220AB
Type of diode: Schottky rectifying
Technology: Trench SBR®
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: reel; tape
Max. forward impulse current: 180A
Max. forward voltage: 0.73V
Produkt ist nicht verfügbar
SBRT40V100CTE DIODES INCORPORATED SBRT40V100CT.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; Trench SBR®; THT; 100V; 20Ax2; I2PAK
Type of diode: Schottky rectifying
Technology: Trench SBR®
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Kind of package: reel; tape
Max. forward impulse current: 180A
Max. forward voltage: 0.73V
Produkt ist nicht verfügbar
DMPH1006UPS-13 DIODES INCORPORATED DMPH1006UPS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -60A; Idm: -140A; 3.2W
Case: PowerDI5060-8
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 124nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -140A
Mounting: SMD
Drain-source voltage: -12V
Drain current: -60A
On-state resistance: 3.5Ω
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
DMPH1006UPSQ-13 DIODES INCORPORATED DMPH1006UPSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -60A; Idm: -140A; 3.2W
Case: PowerDI5060-8
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 124nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -140A
Mounting: SMD
Drain-source voltage: -12V
Drain current: -60A
On-state resistance: 3.5Ω
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
ZXMS6005DGTA ZXMS6005DGTA DIODES INCORPORATED ZXMS6005DG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; IntelliFET™; unipolar; 60V; 2A; 1.3W; SOT223
Type of transistor: N-MOSFET
Technology: IntelliFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Power dissipation: 1.3W
Case: SOT223
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
auf Bestellung 527 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
83+ 0.87 EUR
107+ 0.67 EUR
113+ 0.63 EUR
Mindestbestellmenge: 76
DMNH6010SCTB-13 DIODES INCORPORATED DMNH6010SCTB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; Idm: 532A; 5W; TO263AB
Mounting: SMD
Case: TO263AB
Kind of package: reel; tape
Gate charge: 46nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 532A
Drain-source voltage: 60V
Drain current: 94A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP3013SFK-7 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -80A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Pulsed drain current: -80A
Power dissipation: 2.1W
Case: U-DFN2523-6
Gate-source voltage: ±25V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 33.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMP3013SFV-7 DMP3013SFV-7 DIODES INCORPORATED DMP3013SFV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 0.94W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -10A
On-state resistance: 9.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.94W
Polarisation: unipolar
Case: PowerDI®3333-8
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
auf Bestellung 2000 Stücke:
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2000+0.26 EUR
Mindestbestellmenge: 2000
APX823-23W5G-7 APX823-23W5G-7 DIODES INCORPORATED APX823_824_825A.pdf Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; Active logical level: low
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT25
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 2.25V
Kind of package: reel; tape
Delay time: 200ms
Integrated circuit features: manual reset; watchdog
Produkt ist nicht verfügbar
APX823-26W5G-7 APX823-26W5G-7 DIODES INCORPORATED APX823_824_825A.pdf Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; Active logical level: low
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT25
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 2.63V
Kind of package: reel; tape
Delay time: 200ms
Integrated circuit features: manual reset; watchdog
Produkt ist nicht verfügbar
APX823-29W5G-7 APX823-29W5G-7 DIODES INCORPORATED APX823_824_825A.pdf Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; Active logical level: low
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT25
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
Kind of package: reel; tape
Delay time: 200ms
Integrated circuit features: manual reset; watchdog
auf Bestellung 1300 Stücke:
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310+ 0.23 EUR
400+ 0.18 EUR
425+ 0.17 EUR
Mindestbestellmenge: 280
APX823-46W5G-7 APX823-46W5G-7 DIODES INCORPORATED APX823_824_825A.pdf Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; Active logical level: low
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT25
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4.63V
Kind of package: reel; tape
Delay time: 200ms
Integrated circuit features: manual reset; watchdog
Produkt ist nicht verfügbar
D5V0L2B3T-7 D5V0L2B3T-7 DIODES INCORPORATED D5V0L2B3T.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷8V; 6A; 0.2W; bidirectional,double; SOT523
Type of diode: TVS array
Breakdown voltage: 6...8V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.2W
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 10nA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 20pF
auf Bestellung 3000 Stücke:
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640+0.11 EUR
900+ 0.08 EUR
1020+ 0.07 EUR
1170+ 0.061 EUR
1240+ 0.058 EUR
Mindestbestellmenge: 640
D5V0L2B3W-7 D5V0L2B3W-7 DIODES INCORPORATED D5V0L2B3W.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷8V; 6A; 84W; bidirectional,double; SOT323; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6...8V
Max. forward impulse current: 6A
Peak pulse power dissipation: 84W
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT323
Max. off-state voltage: 5V
Leakage current: 0.1µA
Number of channels: 2
Kind of package: reel; tape
Produkt ist nicht verfügbar
ZXM61P02FTA ZXM61P02FTA DIODES INCORPORATED ZXM61P02F.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.7A; 0.625W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Power dissipation: 0.625W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -0.7A
On-state resistance: 0.9Ω
auf Bestellung 2650 Stücke:
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221+0.32 EUR
262+ 0.27 EUR
319+ 0.22 EUR
336+ 0.21 EUR
Mindestbestellmenge: 221
74LVC32AS14-13 DIODES INCORPORATED 74LVC32A.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Operating temperature: -40...150°C
Number of inputs: 2
Kind of output: push-pull
Number of channels: 4
Kind of gate: OR
Technology: CMOS
Family: LVC
Case: SO14
Type of integrated circuit: digital
Kind of package: reel; tape
Produkt ist nicht verfügbar
74LVC32AT14-13 DIODES INCORPORATED 74LVC32A.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Produkt ist nicht verfügbar
DMN32D2LFB4-7 DIODES INCORPORATED ds31124.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; 350mW; X2-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Power dissipation: 0.35W
Case: X2-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
AP7381-28SA-7 AP7381-28SA-7 DIODES INCORPORATED AP7381.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Produkt ist nicht verfügbar
AP7381-28V-A AP7381-28V-A DIODES INCORPORATED AP7381.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 2.8V
Output current: 0.15A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Produkt ist nicht verfügbar
AP7381-28Y-13 AP7381-28Y-13 DIODES INCORPORATED AP7381.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Produkt ist nicht verfügbar
AP7381-50SA-7 AP7381-50SA-7 DIODES INCORPORATED AP7381.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
auf Bestellung 1715 Stücke:
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355+0.2 EUR
425+ 0.17 EUR
485+ 0.15 EUR
540+ 0.13 EUR
Mindestbestellmenge: 355
AP7381-50V-A AP7381-50V-A DIODES INCORPORATED AP7381.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; TO92; THT; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 5V
Output current: 0.15A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
auf Bestellung 920 Stücke:
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340+0.21 EUR
360+ 0.2 EUR
410+ 0.18 EUR
430+ 0.17 EUR
Mindestbestellmenge: 340
AP7381-70SA-7 AP7381-70SA-7 DIODES INCORPORATED AP7381.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 7V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 7V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Produkt ist nicht verfügbar
AP7381-70V-A AP7381-70V-A DIODES INCORPORATED AP7381.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 7V; 0.15A; TO92; THT; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 7V
Output current: 0.15A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Produkt ist nicht verfügbar
AP7381-70Y-13 AP7381-70Y-13 DIODES INCORPORATED AP7381.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 7V; 0.15A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 7V
Output current: 0.15A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Produkt ist nicht verfügbar
APX803L20-30SA-7 APX803L20-30SA-7 DIODES INCORPORATED APX803L.pdf Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; open drain; 0.9÷5.5VDC; SOT23
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 0.9...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 1µA
Maximum output current: 20mA
Threshold on-voltage: 3V
Kind of package: reel; tape
Delay time: 220ms
Integrated circuit features: ±1,5% accuracy
Produkt ist nicht verfügbar
DMP25H18DLFDE-13 DIODES INCORPORATED DMP25H18DLFDE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -250V
Drain current: -0.21A
On-state resistance: 18Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 2.8nC
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: -1A
Case: U-DFN2020-6
Produkt ist nicht verfügbar
DMP25H18DLFDE-7 DIODES INCORPORATED DMP25H18DLFDE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -250V
Drain current: -0.21A
On-state resistance: 18Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 2.8nC
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: -1A
Case: U-DFN2020-6
Produkt ist nicht verfügbar
ZTX751 ZTX751 DIODES INCORPORATED ZTX750.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 2A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Current gain: 100...300
Mounting: THT
Frequency: 140MHz
Produkt ist nicht verfügbar
AP431SHBN1TR-G1 AP431SHBN1TR-G1 DIODES INCORPORATED AP431S.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
AP431SHBRTR-G1 AP431SHBRTR-G1 DIODES INCORPORATED AP431S.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
SMBJ17A-13-F SMBJ17A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18.9÷21.7V; 21.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...21.7V
Max. forward impulse current: 21.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1884 Stücke:
Lieferzeit 14-21 Tag (e)
265+0.27 EUR
455+ 0.16 EUR
520+ 0.14 EUR
630+ 0.11 EUR
Mindestbestellmenge: 265
DMP1055USW-13 DMP1055USW-13 DIODES INCORPORATED DMP1055USW.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Drain current: -3A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 1.03W
Polarisation: unipolar
Gate charge: 20.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Drain-source voltage: -12V
Produkt ist nicht verfügbar
DMT64M2LPSW-13 DIODES INCORPORATED DMT64M2LPSW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16.6A; Idm: 400A; 2.8W
Kind of package: reel; tape
Pulsed drain current: 400A
Power dissipation: 2.8W
Gate charge: 46.7nC
Polarisation: unipolar
Drain current: 16.6A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PowerDI5060-8
On-state resistance: 6.4mΩ
Mounting: SMD
Produkt ist nicht verfügbar
DMT67M8LPSW-13 DIODES INCORPORATED DMT67M8LPSW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13.8A; Idm: 320A; 2.8W
Kind of package: reel; tape
Pulsed drain current: 320A
Power dissipation: 2.8W
Gate charge: 37.5nC
Polarisation: unipolar
Drain current: 13.8A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PowerDI5060-8
On-state resistance: 8.5mΩ
Mounting: SMD
Produkt ist nicht verfügbar
DMTH47M2LPSW-13 DIODES INCORPORATED Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 51A; Idm: 292A; 3.8W
Kind of package: reel; tape
Pulsed drain current: 292A
Power dissipation: 3.8W
Gate charge: 12.6nC
Polarisation: unipolar
Drain current: 51A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Case: PowerDI5060-8
On-state resistance: 12mΩ
Mounting: SMD
Produkt ist nicht verfügbar
AZ23C6V8-7-F AZ23C6V8-7-F DIODES INCORPORATED AZ23C_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: common anode; double
Zener voltage: 6.8V
Type of diode: Zener
Power dissipation: 0.3W
Produkt ist nicht verfügbar
S3B-13-F DIODES INCORPORATED S3x_S3xB.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; SMC; Ufmax: 1.15V; Ifsm: 100A
Mounting: SMD
Max. forward voltage: 1.15V
Features of semiconductor devices: glass passivated
Max. off-state voltage: 100V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: rectifying
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
SDM01U50CP3-7 DIODES INCORPORATED SDM01U50CP3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 0.1A; X3-WLB0603-2
Mounting: SMD
Max. forward impulse current: 4A
Max. forward voltage: 0.5V
Max. off-state voltage: 50V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 25µA
Case: X3-WLB0603-2
Capacitance: 7.5pF
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
SMCJ160CA-13-F SMCJ160CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 178÷197V; 5.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 160V
Breakdown voltage: 178...197V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
BSP75GQTA DIODES INCORPORATED BSP75GQ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; SMD; SOT223; reel,tape; 60V
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Output current: 1.4A
Type of integrated circuit: power switch
Number of channels: 1
Kind of integrated circuit: low-side
Case: SOT223
Supply voltage: 60V
On-state resistance: 675mΩ
Produkt ist nicht verfügbar
BSP75NQTA DIODES INCORPORATED BSP75NQ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.1A; Ch: 1; SMD; SOT223; reel,tape; 60V
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Output current: 1.1A
Type of integrated circuit: power switch
Number of channels: 1
Kind of integrated circuit: low-side
Case: SOT223
Supply voltage: 60V
On-state resistance: 675mΩ
Produkt ist nicht verfügbar
AP22817BKAWT-7 DIODES INCORPORATED AP22816_17_18.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Operating temperature: -40...85°C
On-state resistance: 95mΩ
Output current: 1.5A
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: TSOT25
Supply voltage: 2.7...5.5V
Produkt ist nicht verfügbar
BAT64-7-F BAT64-7-F DIODES INCORPORATED BAT64-A-C-S.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT23; 3ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Capacitance: 6pF
Case: SOT23
Max. forward voltage: 0.75V
Leakage current: 2µA
Max. forward impulse current: 2.1A
Reverse recovery time: 3ns
Kind of package: reel; tape
Power dissipation: 0.25W
Produkt ist nicht verfügbar
BAT64S-7-F BAT64S-7-F DIODES INCORPORATED BAT64-A-C-S.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT23; 3ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Capacitance: 6pF
Case: SOT23
Max. forward voltage: 0.75V
Leakage current: 2µA
Max. forward impulse current: 2.1A
Reverse recovery time: 3ns
Kind of package: reel; tape
Power dissipation: 0.25W
Produkt ist nicht verfügbar
BAT64T5Q-13-F DIODES INCORPORATED BAT64T5Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOD523; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Capacitance: 6pF
Case: SOD523
Max. forward voltage: 0.725V
Leakage current: 2µA
Max. forward impulse current: 1.2A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.25W
Application: automotive industry
Produkt ist nicht verfügbar
BAT64T5Q-7-F DIODES INCORPORATED BAT64T5Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOD523; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Capacitance: 6pF
Case: SOD523
Max. forward voltage: 0.725V
Leakage current: 2µA
Max. forward impulse current: 1.2A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.25W
Application: automotive industry
Produkt ist nicht verfügbar
BAT64W-7-F BAT64W-7-F DIODES INCORPORATED BAT64W-AW-CW-SW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT323; 3ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Capacitance: 6pF
Case: SOT323
Max. forward voltage: 0.75V
Max. forward impulse current: 2.1A
Reverse recovery time: 3ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
AP7312-1830FM-7 AP7312.pdf
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.15A; uDFN6; SMD; ±2%
Manufacturer series: AP7312
Kind of package: reel; tape
Output voltage: 1.8/3V DC
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 2
Input voltage: 2...6V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Case: uDFN6
Tolerance: ±2%
Produkt ist nicht verfügbar
AP7312-1833FM-7 AP7312.pdf
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.15A; uDFN6; SMD; ±2%
Manufacturer series: AP7312
Kind of package: reel; tape
Output voltage: 1.8/3.3V DC
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 2
Input voltage: 2...6V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Case: uDFN6
Tolerance: ±2%
Produkt ist nicht verfügbar
DMN4040SK3-13 DMN4040SK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; Idm: 50A; 8.9W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Pulsed drain current: 50A
Power dissipation: 8.9W
Gate charge: 18.6nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 54mΩ
Produkt ist nicht verfügbar
MMBZ5233BS-7-F ds31039.pdf ds31037.pdf
MMBZ5233BS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6V; SMD; reel,tape; SOT363; double independent
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: double independent
Leakage current: 5µA
Zener voltage: 6V
Type of diode: Zener
Power dissipation: 0.2W
Produkt ist nicht verfügbar
DMN2300UFB-7B DMN2300UFB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 940mA; Idm: 8A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.94A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 0.89nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN2300UFB4-7B DMN2300UFB4.pdf
DMN2300UFB4-7B
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.96A; 0.5W; X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.96A
Power dissipation: 0.5W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
DMN2300UFD-7 DMN2300UFD.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.34A; Idm: 6A; 470mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.34A
Pulsed drain current: 6A
Power dissipation: 0.47W
Case: X1-DFN1212-3
Gate-source voltage: ±8V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN2300UFL4-7 DMN2300UFL4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.19A; Idm: 6A; 1.39W
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6A
Mounting: SMD
Case: X2-DFN1310-6
Drain-source voltage: 20V
Drain current: 1.19A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 1.39W
Polarisation: unipolar
Gate charge: 3.2nC
Produkt ist nicht verfügbar
MMSZ5239B-7-F mmsz52xxb_Ser.pdf
MMSZ5239B-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 5970 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1120+0.064 EUR
2220+ 0.032 EUR
2500+ 0.029 EUR
2960+ 0.024 EUR
3140+ 0.023 EUR
Mindestbestellmenge: 1120
MMSZ5239BS-7-F mmsz52xxbs_ser.pdf
MMSZ5239BS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
BAS40V-7 ds30561.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.2A; 5ns; SOT563; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Reverse recovery time: 5ns
Power dissipation: 0.15W
Semiconductor structure: double independent
Capacitance: 5pF
Case: SOT563
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Max. forward voltage: 1V
Leakage current: 0.2µA
Produkt ist nicht verfügbar
SBRT40V100CT SBRT40V100CT.pdf
SBRT40V100CT
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; Trench SBR®; THT; 100V; 20Ax2; TO220AB
Type of diode: Schottky rectifying
Technology: Trench SBR®
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: reel; tape
Max. forward impulse current: 180A
Max. forward voltage: 0.73V
Produkt ist nicht verfügbar
SBRT40V100CTE SBRT40V100CT.pdf
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; Trench SBR®; THT; 100V; 20Ax2; I2PAK
Type of diode: Schottky rectifying
Technology: Trench SBR®
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Kind of package: reel; tape
Max. forward impulse current: 180A
Max. forward voltage: 0.73V
Produkt ist nicht verfügbar
DMPH1006UPS-13 DMPH1006UPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -60A; Idm: -140A; 3.2W
Case: PowerDI5060-8
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 124nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -140A
Mounting: SMD
Drain-source voltage: -12V
Drain current: -60A
On-state resistance: 3.5Ω
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
DMPH1006UPSQ-13 DMPH1006UPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -60A; Idm: -140A; 3.2W
Case: PowerDI5060-8
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 124nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -140A
Mounting: SMD
Drain-source voltage: -12V
Drain current: -60A
On-state resistance: 3.5Ω
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
ZXMS6005DGTA ZXMS6005DG.pdf
ZXMS6005DGTA
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; IntelliFET™; unipolar; 60V; 2A; 1.3W; SOT223
Type of transistor: N-MOSFET
Technology: IntelliFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Power dissipation: 1.3W
Case: SOT223
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
auf Bestellung 527 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
83+ 0.87 EUR
107+ 0.67 EUR
113+ 0.63 EUR
Mindestbestellmenge: 76
DMNH6010SCTB-13 DMNH6010SCTB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; Idm: 532A; 5W; TO263AB
Mounting: SMD
Case: TO263AB
Kind of package: reel; tape
Gate charge: 46nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 532A
Drain-source voltage: 60V
Drain current: 94A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP3013SFK-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -80A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.5A
Pulsed drain current: -80A
Power dissipation: 2.1W
Case: U-DFN2523-6
Gate-source voltage: ±25V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 33.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMP3013SFV-7 DMP3013SFV.pdf
DMP3013SFV-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 0.94W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -10A
On-state resistance: 9.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.94W
Polarisation: unipolar
Case: PowerDI®3333-8
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2000+0.26 EUR
Mindestbestellmenge: 2000
APX823-23W5G-7 APX823_824_825A.pdf
APX823-23W5G-7
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; Active logical level: low
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT25
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 2.25V
Kind of package: reel; tape
Delay time: 200ms
Integrated circuit features: manual reset; watchdog
Produkt ist nicht verfügbar
APX823-26W5G-7 APX823_824_825A.pdf
APX823-26W5G-7
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; Active logical level: low
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT25
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 2.63V
Kind of package: reel; tape
Delay time: 200ms
Integrated circuit features: manual reset; watchdog
Produkt ist nicht verfügbar
APX823-29W5G-7 APX823_824_825A.pdf
APX823-29W5G-7
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; Active logical level: low
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT25
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
Kind of package: reel; tape
Delay time: 200ms
Integrated circuit features: manual reset; watchdog
auf Bestellung 1300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
280+0.26 EUR
310+ 0.23 EUR
400+ 0.18 EUR
425+ 0.17 EUR
Mindestbestellmenge: 280
APX823-46W5G-7 APX823_824_825A.pdf
APX823-46W5G-7
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; Active logical level: low
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT25
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 4.63V
Kind of package: reel; tape
Delay time: 200ms
Integrated circuit features: manual reset; watchdog
Produkt ist nicht verfügbar
D5V0L2B3T-7 D5V0L2B3T.pdf
D5V0L2B3T-7
Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷8V; 6A; 0.2W; bidirectional,double; SOT523
Type of diode: TVS array
Breakdown voltage: 6...8V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.2W
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 10nA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 20pF
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
640+0.11 EUR
900+ 0.08 EUR
1020+ 0.07 EUR
1170+ 0.061 EUR
1240+ 0.058 EUR
Mindestbestellmenge: 640
D5V0L2B3W-7 D5V0L2B3W.pdf
D5V0L2B3W-7
Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷8V; 6A; 84W; bidirectional,double; SOT323; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6...8V
Max. forward impulse current: 6A
Peak pulse power dissipation: 84W
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT323
Max. off-state voltage: 5V
Leakage current: 0.1µA
Number of channels: 2
Kind of package: reel; tape
Produkt ist nicht verfügbar
ZXM61P02FTA description ZXM61P02F.pdf
ZXM61P02FTA
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.7A; 0.625W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Power dissipation: 0.625W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -0.7A
On-state resistance: 0.9Ω
auf Bestellung 2650 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
221+0.32 EUR
262+ 0.27 EUR
319+ 0.22 EUR
336+ 0.21 EUR
Mindestbestellmenge: 221
74LVC32AS14-13 74LVC32A.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Operating temperature: -40...150°C
Number of inputs: 2
Kind of output: push-pull
Number of channels: 4
Kind of gate: OR
Technology: CMOS
Family: LVC
Case: SO14
Type of integrated circuit: digital
Kind of package: reel; tape
Produkt ist nicht verfügbar
74LVC32AT14-13 74LVC32A.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Produkt ist nicht verfügbar
DMN32D2LFB4-7 ds31124.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; 350mW; X2-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Power dissipation: 0.35W
Case: X2-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
AP7381-28SA-7 AP7381.pdf
AP7381-28SA-7
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Produkt ist nicht verfügbar
AP7381-28V-A AP7381.pdf
AP7381-28V-A
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 2.8V
Output current: 0.15A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Produkt ist nicht verfügbar
AP7381-28Y-13 AP7381.pdf
AP7381-28Y-13
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Produkt ist nicht verfügbar
AP7381-50SA-7 AP7381.pdf
AP7381-50SA-7
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
auf Bestellung 1715 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
355+0.2 EUR
425+ 0.17 EUR
485+ 0.15 EUR
540+ 0.13 EUR
Mindestbestellmenge: 355
AP7381-50V-A AP7381.pdf
AP7381-50V-A
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; TO92; THT; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 5V
Output current: 0.15A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
auf Bestellung 920 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
340+0.21 EUR
360+ 0.2 EUR
410+ 0.18 EUR
430+ 0.17 EUR
Mindestbestellmenge: 340
AP7381-70SA-7 AP7381.pdf
AP7381-70SA-7
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 7V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 7V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Produkt ist nicht verfügbar
AP7381-70V-A AP7381.pdf
AP7381-70V-A
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 7V; 0.15A; TO92; THT; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 7V
Output current: 0.15A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Produkt ist nicht verfügbar
AP7381-70Y-13 AP7381.pdf
AP7381-70Y-13
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 7V; 0.15A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1V
Output voltage: 7V
Output current: 0.15A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.3...40V
Manufacturer series: AP7381
Produkt ist nicht verfügbar
APX803L20-30SA-7 APX803L.pdf
APX803L20-30SA-7
Hersteller: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; open drain; 0.9÷5.5VDC; SOT23
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 0.9...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 1µA
Maximum output current: 20mA
Threshold on-voltage: 3V
Kind of package: reel; tape
Delay time: 220ms
Integrated circuit features: ±1,5% accuracy
Produkt ist nicht verfügbar
DMP25H18DLFDE-13 DMP25H18DLFDE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -250V
Drain current: -0.21A
On-state resistance: 18Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 2.8nC
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: -1A
Case: U-DFN2020-6
Produkt ist nicht verfügbar
DMP25H18DLFDE-7 DMP25H18DLFDE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -250V
Drain current: -0.21A
On-state resistance: 18Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 2.8nC
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: -1A
Case: U-DFN2020-6
Produkt ist nicht verfügbar
ZTX751 ZTX750.pdf
ZTX751
Hersteller: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 2A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Current gain: 100...300
Mounting: THT
Frequency: 140MHz
Produkt ist nicht verfügbar
AP431SHBN1TR-G1 AP431S.pdf
AP431SHBN1TR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
AP431SHBRTR-G1 AP431S.pdf
AP431SHBRTR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
SMBJ17A-13-F SMBJ_ser.pdf
SMBJ17A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18.9÷21.7V; 21.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...21.7V
Max. forward impulse current: 21.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1884 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
265+0.27 EUR
455+ 0.16 EUR
520+ 0.14 EUR
630+ 0.11 EUR
Mindestbestellmenge: 265
DMP1055USW-13 DMP1055USW.pdf
DMP1055USW-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Drain current: -3A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 1.03W
Polarisation: unipolar
Gate charge: 20.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Drain-source voltage: -12V
Produkt ist nicht verfügbar
DMT64M2LPSW-13 DMT64M2LPSW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16.6A; Idm: 400A; 2.8W
Kind of package: reel; tape
Pulsed drain current: 400A
Power dissipation: 2.8W
Gate charge: 46.7nC
Polarisation: unipolar
Drain current: 16.6A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PowerDI5060-8
On-state resistance: 6.4mΩ
Mounting: SMD
Produkt ist nicht verfügbar
DMT67M8LPSW-13 DMT67M8LPSW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13.8A; Idm: 320A; 2.8W
Kind of package: reel; tape
Pulsed drain current: 320A
Power dissipation: 2.8W
Gate charge: 37.5nC
Polarisation: unipolar
Drain current: 13.8A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PowerDI5060-8
On-state resistance: 8.5mΩ
Mounting: SMD
Produkt ist nicht verfügbar
DMTH47M2LPSW-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 51A; Idm: 292A; 3.8W
Kind of package: reel; tape
Pulsed drain current: 292A
Power dissipation: 3.8W
Gate charge: 12.6nC
Polarisation: unipolar
Drain current: 51A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Case: PowerDI5060-8
On-state resistance: 12mΩ
Mounting: SMD
Produkt ist nicht verfügbar
AZ23C6V8-7-F AZ23C_ser.pdf
AZ23C6V8-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: common anode; double
Zener voltage: 6.8V
Type of diode: Zener
Power dissipation: 0.3W
Produkt ist nicht verfügbar
S3B-13-F S3x_S3xB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; SMC; Ufmax: 1.15V; Ifsm: 100A
Mounting: SMD
Max. forward voltage: 1.15V
Features of semiconductor devices: glass passivated
Max. off-state voltage: 100V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: rectifying
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
SDM01U50CP3-7 SDM01U50CP3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 0.1A; X3-WLB0603-2
Mounting: SMD
Max. forward impulse current: 4A
Max. forward voltage: 0.5V
Max. off-state voltage: 50V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 25µA
Case: X3-WLB0603-2
Capacitance: 7.5pF
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
SMCJ160CA-13-F SMCJ_ser.pdf
SMCJ160CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 178÷197V; 5.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 160V
Breakdown voltage: 178...197V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
BSP75GQTA BSP75GQ.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; SMD; SOT223; reel,tape; 60V
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Output current: 1.4A
Type of integrated circuit: power switch
Number of channels: 1
Kind of integrated circuit: low-side
Case: SOT223
Supply voltage: 60V
On-state resistance: 675mΩ
Produkt ist nicht verfügbar
BSP75NQTA BSP75NQ.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.1A; Ch: 1; SMD; SOT223; reel,tape; 60V
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Output current: 1.1A
Type of integrated circuit: power switch
Number of channels: 1
Kind of integrated circuit: low-side
Case: SOT223
Supply voltage: 60V
On-state resistance: 675mΩ
Produkt ist nicht verfügbar
AP22817BKAWT-7 AP22816_17_18.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Operating temperature: -40...85°C
On-state resistance: 95mΩ
Output current: 1.5A
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: TSOT25
Supply voltage: 2.7...5.5V
Produkt ist nicht verfügbar
BAT64-7-F BAT64-A-C-S.pdf
BAT64-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT23; 3ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Capacitance: 6pF
Case: SOT23
Max. forward voltage: 0.75V
Leakage current: 2µA
Max. forward impulse current: 2.1A
Reverse recovery time: 3ns
Kind of package: reel; tape
Power dissipation: 0.25W
Produkt ist nicht verfügbar
BAT64S-7-F BAT64-A-C-S.pdf
BAT64S-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT23; 3ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Capacitance: 6pF
Case: SOT23
Max. forward voltage: 0.75V
Leakage current: 2µA
Max. forward impulse current: 2.1A
Reverse recovery time: 3ns
Kind of package: reel; tape
Power dissipation: 0.25W
Produkt ist nicht verfügbar
BAT64T5Q-13-F BAT64T5Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOD523; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Capacitance: 6pF
Case: SOD523
Max. forward voltage: 0.725V
Leakage current: 2µA
Max. forward impulse current: 1.2A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.25W
Application: automotive industry
Produkt ist nicht verfügbar
BAT64T5Q-7-F BAT64T5Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOD523; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Capacitance: 6pF
Case: SOD523
Max. forward voltage: 0.725V
Leakage current: 2µA
Max. forward impulse current: 1.2A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.25W
Application: automotive industry
Produkt ist nicht verfügbar
BAT64W-7-F BAT64W-AW-CW-SW.pdf
BAT64W-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT323; 3ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Capacitance: 6pF
Case: SOT323
Max. forward voltage: 0.75V
Max. forward impulse current: 2.1A
Reverse recovery time: 3ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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