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DMTH47M2LPSW-13 DIODES INCORPORATED


Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 51A; Idm: 292A; 3.8W
Kind of package: reel; tape
Pulsed drain current: 292A
Power dissipation: 3.8W
Gate charge: 12.6nC
Polarisation: unipolar
Drain current: 51A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Case: PowerDI5060-8
On-state resistance: 12mΩ
Mounting: SMD
Anzahl je Verpackung: 2500 Stücke
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Technische Details DMTH47M2LPSW-13 DIODES INCORPORATED

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 40V; 51A; Idm: 292A; 3.8W, Kind of package: reel; tape, Pulsed drain current: 292A, Power dissipation: 3.8W, Gate charge: 12.6nC, Polarisation: unipolar, Drain current: 51A, Kind of channel: enhanced, Drain-source voltage: 40V, Type of transistor: N-MOSFET x2, Gate-source voltage: ±20V, Case: PowerDI5060-8, On-state resistance: 12mΩ, Mounting: SMD, Anzahl je Verpackung: 2500 Stücke.

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DMTH47M2LPSW-13 Hersteller : DIODES INCORPORATED Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 51A; Idm: 292A; 3.8W
Kind of package: reel; tape
Pulsed drain current: 292A
Power dissipation: 3.8W
Gate charge: 12.6nC
Polarisation: unipolar
Drain current: 51A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Case: PowerDI5060-8
On-state resistance: 12mΩ
Mounting: SMD
Produkt ist nicht verfügbar