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DMP4025LSS-13

DMP4025LSS-13 Diodes Incorporated


DMP4025LSS.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 1.52W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 20 V
auf Bestellung 70000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.52 EUR
5000+ 0.49 EUR
12500+ 0.46 EUR
25000+ 0.45 EUR
Mindestbestellmenge: 2500
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Technische Details DMP4025LSS-13 Diodes Incorporated

Description: MOSFET P-CH 40V 6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V, Power Dissipation (Max): 1.52W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 20 V.

Weitere Produktangebote DMP4025LSS-13 nach Preis ab 0.59 EUR bis 1.62 EUR

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Preis ohne MwSt
DMP4025LSS-13 DMP4025LSS-13 Hersteller : Diodes Incorporated DMP4025LSS.pdf Description: MOSFET P-CH 40V 6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 1.52W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 20 V
auf Bestellung 72467 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.37 EUR
15+ 1.19 EUR
100+ 0.82 EUR
500+ 0.69 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 13
DMP4025LSS-13 DMP4025LSS-13 Hersteller : Diodes Incorporated DMP4025LSS.pdf MOSFET 40V P-CH MOSFET
auf Bestellung 9035 Stücke:
Lieferzeit 473-477 Tag (e)
Anzahl Preis ohne MwSt
2+1.62 EUR
10+ 1.43 EUR
100+ 1.09 EUR
500+ 0.86 EUR
Mindestbestellmenge: 2
DMP4025LSS-13 DMP4025LSS-13 Hersteller : DIODES INCORPORATED DMP4025LSS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Pulsed drain current: -30A
Drain-source voltage: -40V
Drain current: -6.9A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP4025LSS-13 DMP4025LSS-13 Hersteller : DIODES INCORPORATED DMP4025LSS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8
Kind of package: reel; tape
Gate charge: 33.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Pulsed drain current: -30A
Drain-source voltage: -40V
Drain current: -6.9A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Produkt ist nicht verfügbar