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DMP4025LSS-13 Diodes Incorporated
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Description: MOSFET P-CH 40V 6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 1.52W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 20 V
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.52 EUR |
5000+ | 0.49 EUR |
12500+ | 0.46 EUR |
25000+ | 0.45 EUR |
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Technische Details DMP4025LSS-13 Diodes Incorporated
Description: MOSFET P-CH 40V 6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V, Power Dissipation (Max): 1.52W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 20 V.
Weitere Produktangebote DMP4025LSS-13 nach Preis ab 0.59 EUR bis 1.62 EUR
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DMP4025LSS-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Power Dissipation (Max): 1.52W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 20 V |
auf Bestellung 72467 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4025LSS-13 | Hersteller : Diodes Incorporated |
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auf Bestellung 9035 Stücke: Lieferzeit 473-477 Tag (e) |
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DMP4025LSS-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8 Kind of package: reel; tape Gate charge: 33.7nC Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 Pulsed drain current: -30A Drain-source voltage: -40V Drain current: -6.9A On-state resistance: 45mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 2.4W Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP4025LSS-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -6.9A; Idm: -30A; 2.4W; SO8 Kind of package: reel; tape Gate charge: 33.7nC Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 Pulsed drain current: -30A Drain-source voltage: -40V Drain current: -6.9A On-state resistance: 45mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 2.4W Polarisation: unipolar |
Produkt ist nicht verfügbar |