![DMP4010SK3Q-13 DMP4010SK3Q-13](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2534/MFG_TO-252-3%2CD-Pak%2CSC-63.jpg)
DMP4010SK3Q-13 Diodes Incorporated
![DMP4010SK3Q.pdf](/images/adobe-acrobat.png)
Description: MOSFET P-CH 40V 15A/50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
auf Bestellung 95000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.62 EUR |
5000+ | 0.59 EUR |
12500+ | 0.58 EUR |
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Technische Details DMP4010SK3Q-13 Diodes Incorporated
Description: MOSFET P-CH 40V 15A/50A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V, Power Dissipation (Max): 1.7W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V.
Weitere Produktangebote DMP4010SK3Q-13 nach Preis ab 0.66 EUR bis 1.52 EUR
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DMP4010SK3Q-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V |
auf Bestellung 96526 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4010SK3Q-13 | Hersteller : Diodes Incorporated |
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auf Bestellung 6703 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4010SK3Q-13 | Hersteller : Diodes Inc |
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Produkt ist nicht verfügbar |
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DMP4010SK3Q-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252 Kind of package: reel; tape Gate charge: 91nC Kind of channel: enhanced Gate-source voltage: ±25V Case: TO252 Pulsed drain current: -100A Drain-source voltage: -40V Drain current: -12A On-state resistance: 14mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 3.3W Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP4010SK3Q-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -12A; Idm: -100A; 3.3W; TO252 Kind of package: reel; tape Gate charge: 91nC Kind of channel: enhanced Gate-source voltage: ±25V Case: TO252 Pulsed drain current: -100A Drain-source voltage: -40V Drain current: -12A On-state resistance: 14mΩ Type of transistor: P-MOSFET Mounting: SMD Power dissipation: 3.3W Polarisation: unipolar |
Produkt ist nicht verfügbar |