DMP6018LPSQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V
Power Dissipation (Max): 2.6W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3505 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.12 EUR |
| 5000+ | 1.08 EUR |
| 12500+ | 1.04 EUR |
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Technische Details DMP6018LPSQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V, Power Dissipation (Max): 2.6W (Ta), 113W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3505 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote DMP6018LPSQ-13 nach Preis ab 1.13 EUR bis 2.73 EUR
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DMP6018LPSQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V POWERDI506 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V Power Dissipation (Max): 2.6W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3505 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 24990 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP6018LPSQ-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V~60V PowerDI5060-8 T&R 2.5K |
auf Bestellung 1288 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP6018LPSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W Mounting: SMD Application: automotive industry Case: PowerDI5060-8 Drain-source voltage: -60V Power dissipation: 2.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 13.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -240A On-state resistance: 26mΩ Type of transistor: P-MOSFET Drain current: -48A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMP6018LPSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W Mounting: SMD Application: automotive industry Case: PowerDI5060-8 Drain-source voltage: -60V Power dissipation: 2.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 13.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -240A On-state resistance: 26mΩ Type of transistor: P-MOSFET Drain current: -48A |
Produkt ist nicht verfügbar |