DMTH10H032LPSWQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 2457 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 17+ | 1.07 EUR |
| 20+ | 0.92 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.53 EUR |
| 1000+ | 0.45 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMTH10H032LPSWQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, Power Dissipation (Max): 3.4W (Ta), 68W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UX), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH10H032LPSWQ-13 nach Preis ab 0.39 EUR bis 1.1 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMTH10H032LPSWQ-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 61V-100V PowerDI5060-8/SWP T&R 2.5K |
auf Bestellung 2475 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
| DMTH10H032LPSWQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Polarisation: unipolar Kind of channel: enhanced Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
|
|
DMTH10H032LPSWQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.4W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||
| DMTH10H032LPSWQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Polarisation: unipolar Kind of channel: enhanced Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |