DMT68M8LPS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 69.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.47 EUR |
| 5000+ | 0.45 EUR |
| 12500+ | 0.42 EUR |
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Technische Details DMT68M8LPS-13 Diodes Incorporated
Description: MOSFET N-CH 60V PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 69.2A (Tc), Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V, Power Dissipation (Max): 2.4W (Ta), 56.8W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V.
Weitere Produktangebote DMT68M8LPS-13 nach Preis ab 0.44 EUR bis 1.25 EUR
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DMT68M8LPS-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V |
auf Bestellung 2239 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT68M8LPS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 69.2A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V Power Dissipation (Max): 2.4W (Ta), 56.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V |
auf Bestellung 14855 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT68M8LPS-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 14.1A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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| DMT68M8LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.2A; Idm: 270A; 2.4W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Drain current: 11.2A Drain-source voltage: 60V Power dissipation: 2.4W Polarisation: unipolar Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 270A On-state resistance: 10.8mΩ Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMT68M8LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.2A; Idm: 270A; 2.4W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Drain current: 11.2A Drain-source voltage: 60V Power dissipation: 2.4W Polarisation: unipolar Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 270A On-state resistance: 10.8mΩ |
Produkt ist nicht verfügbar |