![DMN67D7L-13 DMN67D7L-13](https://static6.arrow.com/aropdfconversion/arrowimages/30c1663b44ec3f86d2174da4f88601890d242d7b/dmp3099l-7.jpg)
auf Bestellung 130000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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10000+ | 0.038 EUR |
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Technische Details DMN67D7L-13 Diodes Zetex
Description: MOSFET N-CH 60V 210MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 210mA (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V, Power Dissipation (Max): 570mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±40V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.821 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V.
Weitere Produktangebote DMN67D7L-13 nach Preis ab 0.043 EUR bis 0.42 EUR
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DMN67D7L-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 570mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±40V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.821 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V |
auf Bestellung 140000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN67D7L-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 570mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±40V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.821 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V |
auf Bestellung 140000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN67D7L-13 | Hersteller : Diodes Inc |
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Produkt ist nicht verfügbar |
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DMN67D7L-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 150mA; Idm: 0.8A; 570mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.15A Pulsed drain current: 0.8A Power dissipation: 570mW Case: SOT23 Gate-source voltage: ±40V On-state resistance: 5Ω Mounting: SMD Gate charge: 821pC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMN67D7L-13 | Hersteller : Diodes Incorporated |
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Produkt ist nicht verfügbar |
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DMN67D7L-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 150mA; Idm: 0.8A; 570mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.15A Pulsed drain current: 0.8A Power dissipation: 570mW Case: SOT23 Gate-source voltage: ±40V On-state resistance: 5Ω Mounting: SMD Gate charge: 821pC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |